arXiv subjects

B. Lei

Publications and source records attributed to B. Lei.

At least 19 recordsLinked to original sources

arXiv2022

Analyses of Flight Time During Solar Proton Events and Solar Flares

Analyzing the effects of space weather on aviation is a new and developing topic. It has been commonly accepted that the flight time of the polar flights may increase during solar proton events because the flights have to change their route to avoid the high-energy particles. However, apart from such phenomenon, researches related to the flight time during space weather events is very rare. Based on the analyses of 39 representative international air routes around westerlies, it is found that 97.44% (94.87%) of the commercial airplanes on the westbound (eastbound) air routes reveal shorter (longer) flight time during solar proton events compared to those during quiet periods, and the averaged magnitude of change in flight time is ~10 min or 0.21%-4.17% of the total flight durations. Comparative investigations reassure the certainty of such phenomenon that the directional differences in flight time are still incontrovertible regardless of over-land routes (China-Europe) or over-sea routes (China-Western America). Further analyses suggest that the solar proton events associated atmospheric heating will change the flight durations by weakening certain atmospheric circulations, such as the polar jet stream. While the polar jet stream will not be obviously altered during solar flares so that the directional differences in flight time are not found. Besides the conventional space weather effects already known, this paper is the first report that indicates a distinct new scenario of how the solar proton events affect flight time. These analyses are also important for aviation since our discoveries could help the airways optimize the air routes to save passenger time costs, reduce fuel costs and even contribute to the global warming issues.

astro-ph.SR↗

arXiv2022

Polarization dependent beam pointing jitter in laser wake field accelerators

We present experimental results, which show a laser polarization dependent contribution to electron beam pointing jitter in laser wakefield accelerators (LWFA). We develop a theoretical model for the polarization dependence in terms of the transverse dynamics of trapped electrons, resonantly driven by bubble centroid oscillations. The latter are generated by the carrier wave phase evolution at the self-steepened laser pulse front. In the model, the polarization dependent jitter originates from shot-to-shot fluctuations of the laser carrier envelope phase. The model is verified by particle in cell simulations and suggests that for non-CEP stabilized systems the polarization dependent jitter may form an ultimate limit to beam pointing stability in LWFAs.

physics.acc-ph↗

arXiv2021

Evolution of transport properties in FeSe thin flakes with thickness approaching the two-dimensional limit

Electronic properties of FeSe can be tuned by various routes. Here, we present a comprehensive study on the evolution of the superconductivity and nematicity in FeSe with thickness from bulk single crystal down to bilayer ($\sim$ 1.1 nm) through exfoliation. With decreasing flake thickness, both the structural transition temperature $T_{\rm s}$ and the superconducting transition temperature $T_{\rm c}^{\rm zero}$ are greatly suppressed. The magnetic field ($B$) dependence of Hall resistance $R_{xy}$ at 15 K changes from $B$-nonlinear to $B$-linear behavior up to 9 T, as the thickness ($d$) is reduced to 13 nm. $T_{\rm c}$ is linearly dependent on the inverse of flake thickness (1/$d$) when $d\le$ 13 nm, and a clear drop of $T_{\rm c}$ appears with thickness smaller than 27 nm. The $I$-$V$ characteristic curves in ultrathin flakes reveal the signature of Berezinskii-Kosterlitz-Thouless (BKT) transition, indicating the presence of two-dimensional superconductivity. Anisotropic magnetoresistance measurements further support 2D superconductivity in few-layer FeSe. Increase of disorder scattering, anisotropic strains and dimensionality effect with reducing the thickness of FeSe flakes, might be taken into account for understanding these behaviors. Our study provides systematic insights into the evolution of the superconducting properties, structural transition and Hall resistance of a superconductor FeSe with flakes thickness and provides an effective way to find two-dimensional superconductivity as well as other 2D novel phenomena.

cond-mat.supr-con↗

arXiv2021

Concurrence of anomalous Hall effect and charge density wave in a superconducting topological kagome metal

As one of the most fundamental physical phenomena, the anomalous Hall effect (AHE) typically occurs in ferromagnetic materials but is not expected in the conventional superconductors. Here, we have observed a giant AHE in kagome superconductor CsV3Sb5 with transition temperature (Tc) of 2.7 K. The anomalous Hall conductivity reaches up to 2.1*10^4 Ω-1 cm-1 which is larger than those observed in most of the ferromagnetic metals. Strikingly, the emergence of AHE exactly follows the higher-temperature charge-density-wave (CDW) transition with TCDW ~ 94 K, indicating a strong correlation between the CDW state and AHE. Furthermore, AHE disappears when the CDW transition is completely suppressed at high pressure. The origin for AHE is attributed to enhanced skew scattering in CDW state and large Berry curvature arose from the kagome lattice. These discoveries make CsV3Sb5 as an ideal platform to study the interplay among nontrivial band topology, CDW and unconventional superconductivity.

cond-mat.str-el↗

arXiv2021

Unusual competition of superconductivity and charge-density-wave state in a compressed topological kagome metal

Understanding the competition between superconductivity and other ordered states (such as antiferromagnetic or charge-density-wave (CDW) state) is a central issue in condensed matter physics. The recently discovered layered kagome metal AV3Sb5 (A = K, Rb, and Cs) provides us a new playground to study the interplay of superconductivity and CDW state by involving nontrivial topology of band structures. Here, we conduct high-pressure electrical transport and magnetic susceptibility measurements to study CsV3Sb5 with the highest Tc of 2.7 K in AV3Sb5 family. While the CDW transition is monotonically suppressed by pressure, superconductivity is enhanced with increasing pressure up to P1~0.7 GPa, then an unexpected suppression on superconductivity happens until pressure around 1.1 GPa, after that, Tc is enhanced with increasing pressure again. The CDW is completely suppressed at a critical pressure P2~2 GPa together with a maximum Tc of about 8 K. In contrast to a common dome-like behavior, the pressure-dependent Tc shows an unexpected double-peak behavior. The unusual suppression of Tc at P1 is concomitant with the rapidly damping of quantum oscillations, sudden enhancement of the residual resistivity and rapid decrease of magnetoresistance. Our discoveries indicate an unusual competition between superconductivity and CDW state in pressurized kagome lattice.

cond-mat.supr-con↗

arXiv2020

Spin-Orbital-Intertwined Nematic State in FeSe

The importance of the spin-orbit coupling (SOC) effect in Fe-based superconductors (FeSCs) has recently been under hot debate. Considering the Hund's coupling-induced electronic correlation, the understanding of the role of SOC in FeSCs is not trivial and is still elusive. Here, through a comprehensive study of 77Se and 57Fe nuclear magnetic resonance, a nontrivial SOC effect is revealed in the nematic state of FeSe. First, the orbital-dependent spin susceptibility, determined by the anisotropy of the 57Fe Knight shift, indicates a predominant role from the 3dxy orbital, which suggests the coexistence of local and itinerant spin degrees of freedom (d.o.f.) in the FeSe. Then, we reconfirm that the orbital reconstruction below the nematic transition temperature (Tnem ~ 90 K) happens not only on the 3dxz and 3dyz orbitals but also on the 3dxy orbital, which is beyond a trivial ferro-orbital order picture. Moreover, our results also indicate the development of a coherent coupling between the local and itinerant spin d.o.f. below Tnem, which is ascribed to a Hund's coupling-induced electronic crossover on the 3dxy orbital. Finally, due to a nontrivial SOC effect, sizable in-plane anisotropy of the spin susceptibility emerges in the nematic state, suggesting a spin-orbital-intertwined nematicity rather than simply spin- or orbital-driven nematicity}. The present work not only reveals a nontrivial SOC effect in the nematic state but also sheds light on the mechanism of nematic transition in FeSe.

cond-mat.supr-con↗

arXiv2019

Magnetic and transport properties in magnetic topological insulators MnBi2Te4(Bi2Te3)n (n=1,2)

The observation of quantized anomalous Hall conductance in the forced ferromagnetic state of MnBi2Te4 thin flakes has attracted much attentions. However, strong magnetic field is needed to fully polarize the magnetic moments due to the large antiferromagnetic interlayer exchange coupling. Here, we reported the magnetic and electrical transport properties of the magnetic van der Waals MnBi2Te4(Bi2Te3)n (n=1,2) single crystals, in which the interlayer antiferromagnetic exchange coupling is greatly suppressed with the increase of the separation layers Bi2Te3. MnBi4Te7 and MnBi6Te10 show weak antiferromagnetic transition at 12.3 and 10.5 K, respectively. The ferromagnetic hysteresis was observed at low temperature for both of the crystals, which is quite crucial for realizing the quantum anomalous Hall effect without external magnetic field. Our work indicates that MnBi2Te4(Bi2Te3)n (n=1,2) provide ideal platforms to investigate the rich topological phases with going to their 2D limits.

cond-mat.mtrl-sci↗

arXiv2019

Structural and electronic phase transitions driven by electric field in metastable MoS$_2$ thin flake

Transition-metal-dichalcogenides own a variety of structures as well as electronic properties which can be modulated by structural variations, element substitutions, ion or molecule intercalations, etc. However, there is very limited knowledge on metastable phases of this family, especially the precise regulation of structural changes and accompanied evolution of electronic properties. Here, based on a new developed field-effect transistor with solid ion conductor as the gate dielectric, we report a controllable structural and electronic phase transitions in metastable MoS$_2$ thin flakes driven by electric field. We found that the metastable structure of 1T$^{'''}$-MoS$_2$ thin flake can be transformed into another metastable structure of 1T$^{'}$ -type upon intercalation of lithium regulated by electric field. Moreover, the metastable 1T$^{'}$ phase persists during the cycle of intercalation and de-intercalation of lithium controlled by electric field, and the electronic properties can be reversibly manipulated with a remarkable change of resistance by four orders of magnitude from the insulating 1T$^{'}$-LiMoS$_2$ to superconducting 1T$^{'}$-MoS$_2$. Such reversible and dramatic changes in electronic properties provide intriguing opportunities for development of novel nano-devices with highly tunable characteristics under electric field.

cond-mat.supr-con↗

arXiv2018

Superconductivity in the metastable 1T' and 1T''' phases of MoS$_2$ crystals

Transition-metal dichalcogenides open novel opportunities for the exploration of exciting new physics and devices. As a representative system, 2H-MoS$_2$ has been extensively investigated owing to its unique band structure with a large band gap, degenerate valleys and non-zero Berry curvature. However, experimental studies of metastable 1T polytypes have been a challenge for a long time, and electronic properties are obscure due to the inaccessibility of single phase without the coexistence of 1T', 1T'' and 1T''' lattice structures, which hinder the broad applications of MoS$_2$ in future nanodevices and optoelectronic devices. Using ${K_x(H_2O)_yMoS_2}$ as the precursor, we have successfully obtained high-quality layered crystals of the metastable 1T'''-MoS$_2$ with $\sqrt{3}a\times\sqrt{3}a$ superstructure and metastable 1T'-MoS$_2$ with a$\times$2a superstructure, as evidenced by structural characterizations through scanning tunneling microscopy, Raman spectroscopy and X-ray diffraction. It is found that the metastable 1T'-MoS$_2$ is a superconductor with onset transition temperature (${T_c}$) of 4.2 K, while the metastable 1 T'''-MoS$_2$ shows either superconductivity with Tc of 5.3 K or insulating behavior, which strongly depends on the synthesis procedure. Both of the metastable polytypes of MoS$_2$ crystals can be transformed to the stable 2H phase with mild annealing at about 70 $^{\circ}$C in He atmosphere. These findings provide pivotal information on the atomic configurations and physical properties of 1T polytypes of MoS$_2$.

cond-mat.supr-con↗

arXiv2018

Electric-field controlled superconductor-ferromagnetic insulator transition

How to control collectively ordered electronic states is a core interest of condensed matter physics. We report an electric field controlled reversible transition from superconductor to ferromagnetic insulator in (Li,Fe)OHFeSe thin flake using solid ion conductor as the gate dielectric. By driving Li ions into and out of the (Li,Fe)OHFeSe thin flake with electric field, we obtained a dome-shaped superconducting region with optimal Tc ~ 43 K, which is separated by a quantum critical point from ferromagnetically insulating phase. The ferromagnetism arises from the long range order of the interstitial Fe ions expelled from the (Li,Fe)OH layers by Li injection. The device can reversibly manipulate collectively ordered electronic states and stabilize new metastable structures by electric field.

cond-mat.supr-con↗

arXiv2018

Magnetic-field enhanced high-thermoelectric performance in topological Dirac semimetal Cd$_3$As$_2$ crystal

Thermoelectric materials can be used to convert heat to electric power through the Seebeck effect. We study magneto-thermoelectric figure of merit (ZT) in three-dimensional Dirac semimetal Cd$_3$As$_2$ crystal. It is found that enhancement of power factor and reduction of thermal conductivity can be realized at the same time through magnetic field although magnetoresistivity is greatly increased. ZT can be highly enhanced from 0.17 to 1.1 by more than six times around 350 K under a perpendicular magnetic field of 7 Tesla. The huge enhancement of ZT by magnetic field arises from the linear Dirac band with large Fermi velocity and the large electric thermal conductivity in Cd$_3$As$_2$. Our work paves a new way to greatly enhance the thermoelectric performance in the quantum topological materials.

cond-mat.mtrl-sci↗

arXiv2018

Discrete superconducting phases in FeSe-derived superconductors

A general feature of unconventional superconductors is the existence of a superconducting dome in the phase diagram as a function of carrier concentration. For the simplest iron-based superconductor FeSe (with transition temperature Tc ~ 8 K), its Tc can be greatly enhanced by doping electrons via many routes, even up to 65 K in monolayer FeSe/SiTiO3. However, a clear phase diagram with carrier concentration for FeSe-derived superconductors is still lacking. Here, we report the observation of a series of discrete superconducting phases in FeSe thin flakes by continuously tuning carrier concentration through the intercalation of Li and Na ions with a solid ionic gating technique. Such discrete superconducting phases are robust against the substitution of Se by 20% S, but are vulnerable to the substitution of Fe by 2% Cu, highlighting the importance of the iron site being intact. A complete superconducting phase diagram for FeSe-derivatives is given, which is distinct from other unconventional superconductors.

cond-mat.supr-con↗

arXiv2017

Tuning electronic properties of FeSe$_{0.5}$Te$_{0.5}$ thin flakes by a novel field effect transistor

Using a field-effect transistor (FET) configuration with solid Li-ion conductor (SIC) as gate dielectric, we have successfully tuned carrier density in FeSe$_{0.5}$Te$_{0.5}$ thin flakes, and the electronic phase diagram has been mapped out. It is found that electron doping controlled by SIC-FET leads to a suppression of the superconducting phase, and eventually gives rise to an insulating state in FeSe$_{0.5}$Te$_{0.5}$. During the gating process, the (001) peak in XRD patterns stays at the same position and no new diffraction peak emerges, indicating no evident Li$^+$ ions intercalation into the FeSe$_{0.5}$Te$_{0.5}$. It indicates that a systematic change of electronic properties in FeSe$_{0.5}$Te$_{0.5}$ arises from the electrostatic doping induced by the accumulation of Li$^+$ ions at the interface between FeSe$_{0.5}$Te$_{0.5}$ and solid ion conductor in the devices. It is striking that these findings are drastically different from the observation in FeSe thin flakes using the same SIC-FET, in which $T_c$ is enhanced from 8 K to larger than 40 K, then the system goes into an insulating phase accompanied by structural transitions.

cond-mat.supr-con↗

arXiv2016

Tuning phase transitions of FeSe thin flakes by field effect transistor with solid ion conductor as gate dielectric

We develop a novel field effect transistor (FET) device using solid ion conductor (SIC) as a gate dielectric, and we can tune the carrier density of FeSe by driving lithium ions in and out of the FeSe thin flakes, and consequently control the material properties and its phase transitions. A dome-shaped superconducting phase diagram was mapped out with increasing Li content, with $T_c$ $\sim$ 46.6 K for the optimal doping, and an insulating phase was reached at the extremely overdoped regime. Our study suggests that, using solid ion conductor as a gate dielectric, the SIC-FET device can achieve much higher carrier doping in the bulk, and suit many surface sensitive experimental probes, and can stabilize novel structural phases that are inaccessible in ordinary conditions.

cond-mat.supr-con↗

arXiv2015

Pressure-induced Lifshitz transition in black phosphorus

In a semimetal, both electron and hole carriers contribute to the density of states at the Fermi level. The small band overlaps and multi-band effects give rise to many novel electronic properties, such as relativistic Dirac fermions with linear dispersion, titanic magnetoresistance and unconventional superconductivity. Black phosphorus has recently emerged as an exceptional semiconductor with high carrier mobility and a direct, tunable bandgap. Of particular importance is the search for exotic electronic states in black phosphorus, which may amplify the material's potential beyond semiconductor devices. Here we show that a moderate hydrostatic pressure effectively suppresses the band gap and induces a Lifshitz transition from semiconductor to semimetal in black phosphorus; a colossal magnetoresistance is observed in the semimetallic phase. Quantum oscillations in high magnetic field reveal the complex Fermi surface topology of the semimetallic black phosphorus. In particular, a Dirac-like fermion emerges at around 1.2 GPa, which is continuously tuned by external pressure. The observed semi-metallic behavior greatly enriches black phosphorus's material property, and sets the stage for the exploration of novel electronic states in this material. Moreover, these interesting behaviors make phosphorene a good candidate for the realization of a new two-dimensional relativistic electron system, other than graphene.

cond-mat.mtrl-sci↗

arXiv2015

Evolution of high-temperature superconductivity from low-Tc phase tuned by carrier concentration in FeSe thin flakes

In contrast to bulk FeSe superconductor, heavily electron-doped FeSe-derived superconductors show relatively high Tc without hole Fermi surfaces and nodal superconducting gap structure, which pose great challenges on pairing theories in the iron-based superconductors. In the heavily electron-doped FeSe-based superconductors, the dominant factors and the exact working mechanism that is responsible for the high Tc need to be clarified. In particular, a clean control of carrier concentration remains to be a challenge for revealing how superconductivity and Fermi surface topology evolves with carrier concentration in bulk FeSe. Here, we report the evolution of superconductivity in the FeSe thin flake with systematically regulated carrier concentrations by liquid-gating technique. High-temperature superconductivity at 48 K can be achieved only with electron doping tuned by gate voltage in FeSe thin flake with Tc less than 10 K. This is the first time to achieve such a high temperature superconductivity in FeSe without either epitaxial interface or external pressure. It definitely proves that the simple electron-doping process is able to induce high-temperature superconductivity with Tc as high as 48 K in bulk FeSe. Intriguingly, our data also indicates that the superconductivity is suddenly changed from low-Tc phase to high-Tc phase with a Lifshitz transition at certain carrier concentration. These results help us to build a unified picture to understand the high-temperature superconductivity among all FeSe-derived superconductors and shed light on further pursuit of higher Tc in these materials.

cond-mat.supr-con↗

arXiv2015

Gate-tuned Superconductor-Insulator transition in (Li,Fe)OHFeSe

The antiferromagnetic(AFM) insulator-superconductor transition has been always a center of interest in the underlying physics of unconventional superconductors. The quantum phase transition between Mott insulator with AFM and superconductor can be induced by doping charge carriers in high-Tc cuprate superconductors. For the best characterized organic superconductors of k-(BEDT-TTF)2X (X=anion), a first order transition between AFM insulator and superconductor can be tuned by applied external pressure or chemical pressure. Also, the superconducting state can be directly developed from AFM insulator by application of pressure in Cs3C60. The resemblance of these phase diagrams hints a universal mechanism governing the unconventional superconductivity in close proximity to AFM insulators. However, the superconductivity in iron-based high-Tc superconductors evolves from an AFM bad metal by doping charge carriers, and no superconductor-insulator transition has been observed so far. Here, we report a first-order transition from superconductor to insulator with a strong charge doping induced by ionic gating in the thin flakes of single crystal (Li,Fe)OHFeSe. The Tc is continuously enhanced with electron doping by ionic gating up to a maximum Tc of 43 K, and a striking superconductor-insulator transition occurs just at the verge of optimal doping with highest Tc. A novel phase diagram of temperature-gating voltage with the superconductor-insulator transition is mapped out, indicating that the superconductor -insulator transition is a common feature for unconventional superconductivity. These results help to uncover the underlying physics of iron-based superconductivity as well as the universal mechanism of high-Tc superconductivity. Our finding also suggests that the gate-controlled strong charge doping makes it possible to explore novel states of matter in a way beyond traditional methods.

cond-mat.supr-con↗

arXiv2014

Evolution of Anisotropic In-plane Resistivity with doping level in Ca$_{1-x}$Na$_x$Fe$_2$As$_2$ Single Crystals

We measured the in-plane resistivity anisotropy in the underdoped Ca$_{1-x}$Na$_x$Fe$_2$As$_2$ single crystals. The anisotropy (indicated by $ρ_{\rm b} - ρ_{\rm a}$) appears below a temperature well above magnetic transition temperature $T_{\rm N}$, being positive ($ρ_{\rm b} - ρ_{\rm a} > 0$) as $x\leq$ 0.14. With increasing the doping level to $x$ = 0.19, an intersection between $ρ_{\rm b}$ and $ρ_{\rm a}$ is observed upon cooling, with $ρ_{\rm b} - ρ_{\rm a} < 0$ at low-temperature deep inside a magnetically ordered state, while $ρ_{\rm b} - ρ_{\rm a}> 0$ at high temperature. Subsequently, further increase of hole concentration leads to a negative anisotropy $ρ_{\rm b} - ρ_{\rm a} < 0$ in the whole temperature range. These results manifest that the anisotropic behavior of resistivity in the magnetically ordered state depends strongly on the competition of the contributions from different mechanisms, and the competition between the two contributions results in a complicated evolution of the anisotropy of in-plane resistivity with doping level.

cond-mat.supr-con↗