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B. Negulescu

Publications and source records attributed to B. Negulescu.

3 recordsLinked to original sources

Evidence of the matrix effect on a compositionally graded oxide thin film

A heterostructure of Ba$_{1-x}$Sr$_x$TiO$_3$/La$_{1.1}$Sr$_{0.9}$NiO$_3$ /SrTiO$_3$ has been analysed by magnetic sector secondary ion mass spectrometry (SIMS). The stoichiometry parameter $x$ of the top layer was made varying continuously from 0 to 1 along the width of the sample by combinatorial pulsed laser deposition. Prior to SIMS analysis, the composition gradient of Ba$_{1-x}$Sr$_x$TiO$_3$ was quantitatively characterized by chemical characterizations including wavelength and energy dispersive X-ray spectroscopies. Even if the Ti content is constant into Ba$_{1-x}$Sr$_x$TiO$_3${}, its ionic yield exhibits an increasing trend as Ba is substituted by Sr. Such a phenomenon can be explained by the variation of the neighbouring atoms chemistry which affects the ionization probability of titanium during the sputtering process. In addition to the continuously varying composition, the oxide multilayer sample features sharp interfaces hence the in-depth resolution under our analysing conditions has been investigated too. The modelling of the interface crossing profiles reveals that the instrumental contribution to the profile broadening is as low as 5 nm.

cond-mat.mtrl-sci

Fe/MgO/Fe (100) textured tunnel junctions exhibiting spin polarization features of single crystal junctions

Crystallographic and spin polarized transport properties of (100) textured and (100) epitaxial Fe/MgO/Fe magnetic tunnel junctions are compared. Strong similarities in the transport properties show that structural coherence and magnetic quality at the 25 nm grain scale in textured junctions are sufficient to issue signatures of the spin polarized transport specific to a single crystal junction. This demonstrates that the lateral coherence of the Bloch tunneling wave function is identically limited in both systems. Our analysis leads to model the textured tunnel junction as a juxtaposition of nanometer sized single crystal junctions, placed in parallel.

cond-mat.mtrl-sci

Wide range and tunable linear TMR sensor using two exchange pinned electrodes

A magnetic tunnel junction sensor is proposed, with both the detection and the reference layers pinned by IrMn. Using the differences in the blocking temperatures of the IrMn films with different thicknesses, crossed anisotropies can be induced between the detection and the reference electrodes. The pinning of the sensing electrode ensures a linear and reversible output. It also allows tuning both the sensitivity and the linear range of the sensor. The authors show that the sensitivity varies linearly with the ferromagnetic thickness of the detection electrode. It is demonstrated that an increased thickness leads to a rise of sensitivity and a reduction of the operating range.

cond-mat.mtrl-sci