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B. R. K. Nanda

Publications and source records attributed to B. R. K. Nanda.

At least 19 recordsLinked to original sources

Berry Curvature Driven Transport in Silicon-Compatible Altermagnetic $α$-MnTe Thin Films

Integrating spin-dependent functionality with mainstream semiconductor technology is a central goal of modern spintronics, yet most candidate materials remain incompatible with silicon-based platforms. Here, we report the direct epitaxial integration of $α$-MnTe thin films on Si(111) via molecular beam epitaxy and demonstrate a robust anomalous Hall effect (AHE) in this silicon-compatible altermagnetic system. Despite the absence of net bulk magnetization, the films exhibit a pronounced hysteretic Hall response, providing transport evidence consistent with finite Berry curvature generated by symmetry breaking in the thin-film geometry. High-resolution structural and spectroscopic characterization confirms phase-pure, epitaxial growth with hexagonal NiAs-type symmetry, while magnetotransport measurements reveal correlated hysteresis in both transverse and longitudinal channels with systematic temperature evolution. First-principles calculations reveal substantial uncompensated Berry curvature arising from the spin-split band structure, consistent with altermagnetic symmetry and the origin of the observed Hall response. These results establish MnTe/Si(111) as a silicon-compatible altermagnetic platform and chart a concrete pathway for embedding Berry-phase-driven functionalities into scalable semiconductor device architectures.

cond-mat.mtrl-sci↗

Long lived localized defect states in monolayer WSe$_2$: Optical Lifetime distribution and thermal evolution

We carefully investigate the recombination dynamics of localized defect emission in monolayer WSe$_2$ on SiO$_2$/Si substrate using time-resolved photoluminescence over the temperature range of 4 K to 120 K. We observe two long-lived optical lifetimes, one few nanosecond and one hundreds of nanoseconds. PL decay profile of these long lived states is fit well by a power-law, and based on laser fluence studies, the likely origin of the power-law is due to a distribution of life-times rather than many body interactions. Temperature-dependence of these rates shows that thermal detrapping governs these long-lived channels and we obtained a value of 60 meV for the characteristics energy in a Bose-Einstein model. We performed spin-resolved density functional calculations for selenium vacancies, the most likely source of native defects, to elucidate on spin- and momentum-forbidden pathways which are the likely origin of these long lifetimes. Such detailed understanding of long-lived defect states is crucial for quantum and optoelectronic applications.

cond-mat.mtrl-sci↗

Let Cyclic Electrochemical Data Speak for Your Energy Storage Material and Processing

Efforts to improve performance, like energy and power density of electrochemical energy storage devices (batteries, capacitors, and super-capacitors), are being made using a range of experimental and computational tools. The most common strategy involves exploring new material chemistries, developing advanced synthesis routes, and advanced ways to integrate these materials into device architectures. Although it is desirable to evaluate the performance of such efforts at a fixed cell format, not all studies conduct testing across the same cell formats. Specific performance normalized per mass of active material has been adopted as a universal indicator of performance, but it is not a reliable way to compare across cell formats. We propose a new mass normalization, i.e., the mass of electrochemical participants, to calculate specific performance. This new specific performance makes it possible to efficiently compare the efficacy of materials, synthesis, and cell assembly across different cell formats. We developed a framework to comprehensively report materials, synthesis, and cell assembly, and performance data, which facilitates succinctly reporting all performance indicators, including charge discharge curves over all cyclic stability assessments. The new specific performance and mass of the electrochemical participants per unit area of the electrode allows us to create a calculator to estimate performance at any commercial device-level cell format from measured data at the laboratory-level cell. The new specific performance also helps in optimizing the coating thickness and the loading of the active material. The framework can be adapted by journals to facilitate the reporting of data in a comprehensive way. Leveraging this framework, we have also compiled a database (hosted at https://power.tattvasar.com/) by extracting pertinent data from existing literature.

cond-mat.mtrl-sci↗

Topological Hall effect due to electron-skyrmion scattering

Electron scattering from chiral spin textures such as skyrmions is fundamental to the understanding of transport in more complex systems, including skyrmion crystals. Most of the previous studies have focused on the weak-coupling regime, where the exchange interaction is small compared with the electron energy. Real materials, however, often lie in the strong-coupling regime, which exhibits qualitatively different behavior. Using the Lippmann-Schwinger equation and Green's function formalism, valid for all coupling strengths, we uncover several new features in the scattering cross section, including Ramsauer-Townsend minima, pronounced intermediate-coupling resonances, and Landau-level resonances for skyrmions with larger winding numbers. These features strongly influence the topological and spin Hall conductivities, which depend sensitively on the incident electron energy. Our work provides important insights into the Hall transport in collective chiral spin textures such as the skyrmion crystal.

cond-mat.mtrl-sci↗

Active Learning Guided Computational Discovery of 2D Materials with Large Spin Hall Conductivity

Two-dimensional (2D) materials are promising candidates for next-generation spintronic devices due to their tunable properties and potential for efficient spin-charge interconversion. However, discovering materials with intrinsically high spin Hall conductivity (SHC) is hindered by the vast chemical space and expensive nature of conventional experimental and first-principles methods. In this work, we employ an active learning framework to accelerate the discovery of high-SHC 2D materials. Machine learning (ML) models were trained on SHC values computed from density functional theory calculations, incorporating the Kubo formalism via tight-binding Hamiltonians constructed from maximally localized Wannier functions, with explicit treatment of spin-orbit coupling. Starting from random but chemically diverse 24 2D systems, the dataset was expanded to 41 cases (from an overall pool of around 2000 materials) over three active learning loops using an expected improvement acquisition strategy. The ML technique successfully identified several high SHC candidates with the best candidate exhibiting a SHC of 271.52 (hbar/e) Ohm^-1, nearly 23 times higher than the top performer in the initial round. Beyond candidate discovery, several features such as orbital symmetry near the Fermi energy, types of atomic species, material composition, covalent radii, and electronegativity of constituent atoms were found to play critical role in shaping the spin Hall response in 2D systems. The data generated is made publicly available to facilitate further advances in 2D spintronics.

cond-mat.mtrl-sci↗

Interface and Strain Control of Emergent Weyl Semimetallic Phase in SrNbO$_{3}$/LaFeO$_{3}$ Heterostructures

Realizing correlated topological semimetallic phases in bulk transition-metal oxides remains challenging due to rigid lattice symmetry, correlation-induced gap opening, and limited structural tunability. However, complex-oxide thin films and heterostructures provide a powerful platform to stabilize topological phases by tailoring the requisite lattice symmetry through strain control and interface design. In this study, we demonstrate the emergence of Weyl-like electronic states and associated chiral transport in SrNbO$_3$ (SNO)/LaFeO$_3$ (LFO) bilayers. Transport measurements reveal signatures consistent with nontrivial topology, including large non-saturating MR, a nonlinear Hall response, and a chiral anomaly like feature in longitudinal magnetotransport under parallel electric and magnetic fields ($\mathbf{B} \parallel \mathbf{I}$). In addition, we observe a \textcolor{black}{signature} of anomalous Hall contribution, likely arising from \textcolor{black}{proximity effect induced by LFO layers at the interface}. First-principles calculations reveal an $a^0a^0c^-$ rotation pattern of the NbO$_6$ octahedra, together with interfacial lattice distortions in the SNO layer that drive the emergence of a twofold degenerate Weyl semimetallic phase protected by screw axis lattice symmetry. This is further confirmed by Berry curvature calculations, which show opposite sign Berry curvature peaks for the upper and lower band characteristic of a Weyl node. Our combined experimental and theoretical results highlight the critical role of strain and interfacial octahedral distortions in stabilizing Weyl phase in transition metal based perovskite bilayer.

cond-mat.str-el↗

Unlocking Doping Effects on Altermagnetism in MnTe: Emergence of Quasi-altermagnetism

Governed by specific symmetries, altermagnetism is an emerging field in condensed matter physics, characterized by unique spin-splitting of the bands in the momentum space co-existing with the compensated magnetization as in antiferromagnets. As crystals can have tailored and unintended defects, it is important to gain insights on how altermagnets are affected by the defects-driven symmetry-breaking which, in turn, can build promising perspectives on potential applications. In this study, considering the widely investigated MnTe as a prototype altermagnet, defects are introduced through substitutional doping to create a large configuration space of spin space groups. With the aid of density functional theory calculations, symmetry analysis, and model studies in this configuration space, we demonstrate the generic presence of spin-split of the antiferromagnetic bands in the momentum space. This is indicative of a wider class of quasi-altermagnetic materials, augmenting the set of ideal altermagnetic systems. Furthermore, we show that while pristine MnTe does not show anomalous Hall conductivity (AHC) with out-of-plane magnetization, suitable doping can be carried out to obtain finite and varied AHC. Our predictions of quasi-altermagnetism and doping-driven tailored AHC have the potential to open up as-yet-unexplored directions in this developing field.

cond-mat.mtrl-sci↗

Quantum Dynamics of Electron Scattering from Skyrmions

Scattering of electrons from chiral spin textures such as the skyrmions is an emerging research area due to its richness in topological quantum transport, which is significant for spintronic devices. We study the dynamical process of scattering of the spin-$\frac{1}{2}$ particles in the form of Gaussian wavepackets from skyrmions with the aid of the non-relativistic time-dependent Schrödinger equation. The scattering cross section shows a rich angular dependence and is deterministically influenced by the iterative flipping of the spin state inside the skyrmion. The latter leads to a set of non-trivial outcomes which include finite transmission and reflection probabilities irrespective of interaction strength, formation of secondary wavefronts associated with back-converted spin components, and a long-lived quasi-bound state at the scattering center. In addition to the rich and intriguing physics, the numerical recipe developed here can be easily adopted for any arbitrary spin texture, which will prepare a playground to explore tunable spin transport.

cond-mat.mes-hall↗

Quantum Resistance in Multilayer Graphene-BiFeO3 Memristor for Brain-Inspired Computing

In the era of big data and the Internet of Things, quantum-level control of conductance states offers a promising route toward high-density data storage and brain-inspired neuromorphic computing. Although quantum conductance (QC) phenomena have been demonstrated in various metal oxide memristors, achieving reliable and precise control over quantized states remains in its infancy. Here, we demonstrate bidirectional quantum conductance states in multifunctional BiFeO3 (BFO) perovskite memristors integrated with multilayer-graphene contacts, enabling higher-order tunability and revealing the potential of perovskite-2D heterostructures for quantum-engineered memory and computing devices. XPS analysis provides detailed insights into oxygen vacancy dynamics in BFO, whereas first-principles density functional theory calculations clearly reveal a strong localized electric field at the graphene-BFO interface. Our devices exhibit current-controlled higher-order QC transitions facilitated by quantum point contact formation, giving rise to quantized conductance states during both SET and RESET processes. Time-lag correlation maps quantify the stochastic evolution of QC states under dynamic voltage-pulse tuning schemes. Notably, the quantized conductance states effectively emulate synaptic potentiation and depression, enabling precise weight modulation for high-accuracy image and digit recognition in convolutional neural networks. These findings establish perovskite-2D heterostructures as promising candidates for QC-driven resistive switching and demonstrate their potential for developing controllable quantum memristors.

cond-mat.mes-hall↗

Effect of symmetry breaking on altermagnetism in CrSb and Formation of fragmented nodal curves

Phenomena concerning altermagnets have opened up a window for unconventional analysis of the momentum space spin polarization (MSSP) of antiferromagnetic materials. Taking the example of one of the widely investigated altermagnets, CrSb, we explore the underlying mechanisms leading to the formation or breaking of altermagnetism. With the aid of DFT calculation and symmetry analysis, we study the behavior of MSSP in the altermagnetic bands of pristine CrSb, along with a few model structures designed from the pristine one by hypothetical vacancy engineering and interstitial doping. We show that the six-fold rotational symmetry of the pristine CrSb can be reduced to a two-fold rotational symmetry via vacancy and doping engineering. We discover the formation of fragmented nodal curves (FNCs) across the Brillouin zone when in an altermagnetic material when the symmetry is restricted to two-fold rotation. Unlike the typical nodal planes and axes, the location of the FNCs in the momentum space is found to be band-specific. The formation of FNCs is further validated by introducing uniaxial strain to CrSb and by examining the band structure of RbMnPO$_4$, as they both exhibit a two-fold rotational symmetry responsible for altermagnetism. We observe that, unlike the pristine case, these FNCs have the potential to manifest anomalous Hall conductivities (AHC), while the Néel vector orients along both in-plane and out-of-plane directions. This flexibility of the AHC will pave the way for the application of altermagnets in the futuristic quantum devices.

cond-mat.mtrl-sci↗

Tuning the band topology and topological Hall effect in skyrmion crystals via the spin-orbit coupling

The topological Hall effect is the result of spin-asymmetric deflection of charge carriers flowing through a non-collinear spin system. Effective manipulation of the topological Hall conductivity (THC) in skyrmions is currently a vigorous area of research with an eye towards potential spintronics application. Here, we show that the band topology and the THC in a skyrmion crystal can be tuned by changing the strength of the Rashba spin-orbit coupling (SOC), which can be accomplished via a perpendicular electric field. This results in the change of the subband Chern numbers and a transition between ordinary insulator and Chern insulator as the Rashba SOC is varied. For partially filled subbands, the Rashba SOC can tune the THC and reverse its sign, so that the direction of the Hall current is flipped. The critical Rashba strength for this depends on the skyrmion type and the carrier density. We extend our analysis to the cases of Dresselhaus and Weyl SOC as well, and show that they can be directly mapped to the Rashba SOC case and therefore lead to similar results. Our work opens up the scope to go beyond the existing avenues for the control of charge transport in skyrmion crystals.

cond-mat.mtrl-sci↗

Strain and Correlation Modulated Magnetic Anisotropy and Dzyaloshinskii--Moriya Interaction in 2D H-FeTe$_2$

In the ongoing research on two-dimensional (2D) ferromagnetic materials with strong intrinsic Dzyaloshinskii--Moriya interaction (DMI), most efforts have focused on doping, Janus engineering, or heterostructure formation to break inversion symmetry and enhance spin--orbit coupling (SOC). Here, we demonstrate that a pristine 2D material, monolayer H-FeTe$_2$, can naturally host robust DMI and magnetic anisotropy due to its intrinsic broken inversion symmetry and the strong SOC of Te atoms. We explore the effect of biaxial strain and electron correlation on H-FeTe$_2$ using first-principles DFT+$U$ calculations. We systematically investigate the Heisenberg exchange interaction, magnetic anisotropy, and DMI in the space spanned by strain and correlation. Our results reveal a distinct, non-monotonic strain dependence of both magnetic anisotropy energy (MAE) and DMI, including a strain-tunable crossover between in-plane and out-of-plane magnetic easy axes. A remarkable enhancement of the in-plane DMI is observed under the combined influence of strain and strong correlations, which is unusual for pristine 2D materials and suggests a favorable regime for spintronic applications.Notably, even in the absence of strain, H-FeTe$_2$ exhibits finite DMI and considerable anisotropy, which is rare for a pure 2D material. Through these findings, we present H-FeTe$_2$ as a unique pristine 2D system with robust and tunable spin interactions for exploring fundamental spin--orbit-driven magnetic phenomena.

cond-mat.other↗

Deterministic role of chemical bonding in the formation of altermagnetism: Reflection from correlated electron system NiS

Altermagnetism, a new collinear magnetic state, has gained significant attention in the last few years, and the underlying mechanisms driving this quantum phase are still evolving. Going beyond the group theoretical analyses, which focus on providing a binary description of the presence or absence of the altermagnetic state, in this work, we explore the role of crystal chemical bonding. As the latter successfully integrates the crystal and orbital symmetries and is tunable, it provides a quantitative and realistic mechanism to explain the formation of altermagnetism. From the first principles calculations and tight-binding models within the framework of the linear combination of atomic orbitals on NiS, we establish a set of selection rules for the formation of altermagnetism in the NiAs prototype compounds (e.g. CrSb, MnTe, etc.). Broadly, if single orbitals from Ni and S sites are involved in the bonding, the second neighbor interaction between the nonmagnetic atoms is a must to modulate the intra-sublattice interactions differently for the opposite spin sublattices so that the antiferromagnetic sublattice band degeneracy is lifted and momentum-dependent altermagnetic spin split (AMSS) appears. However, when multiple orbitals are involved from the Ni and S sites in the chemical bonding, altermagnetism is naturally present. Together, they amplify the AMSS. Further, we propose twelve antinodal regions in the NiAs type hexagonal crystals, where AMSS split is maximum. Specific to NiS, AMSS increases with correlation, and for the edge valence and conduction bands, it can go beyond 1eV. The present study opens up new pathways to design chemical bonding driven selection rules in addition to the existing crystal symmetry criteria to tailor tunable altermagnetism.

cond-mat.mtrl-sci↗

Comment on "Neutron diffraction evidence of the 3-dimensional structure of Ba2MnTeO6 and misidentification of the triangular layers within the face-centred cubic lattice"

Frustrated magnetism continues to attract significant attention due to its potential to host novel quantum many-body phenomena and associated exotic excitations that transcend existing paradigms. Herein, we present our reply to the comment on our recent thermodynamic and muon spin relaxation studies on a frustrated double perovskite, Ba2MnTeO6 (henceforth BMTO). Previous studies by four independent groups, including our group, suggested a trigonal space group based on single-crystal and polycrystalline samples of BMTO, while the recent comment reports a cubic space group based on polycrystalline samples. We believe that the structure is fairly intricate because of the slight variations between the two space groups, refining the crystal structure of BMTO remains an unresolved problem that needs additional high-resolution XRD and neutron diffraction studies on high-quality single crystals. It is thought, however, that structural assignments will not greatly influence any of the primary findings related to the magnetism and spin dynamics of BMTO. These consist of a magnetic phase transition at around 21 K, the observation of antiferromagnetic magnon excitations exhibiting a gap of 1.4 K beneath the phase transition, the presence of short-range spin correlations well above the antiferromagnetic phase transition, and the persistence of spin dynamics even within the magnetically ordered phase. It is important to note that the magnetization, specific heat, and muon spin relaxation findings that constitute the core of our earlier study are independent; the interpretation of these findings did not rely on any specific space group. Concerning the final allocation of the symmetry of BMTO, a definitive differentiation in certain physical characteristics resulting from the symmetry is still necessary.

cond-mat.str-el↗

Evolution of Flat Band and Van Hove Singularities with Interlayer Coupling in Twisted Bilayer Graphene

Here we present a theoretical analysis (applicable to all twist angles of TBG) of band dispersion and density of states in TBG relating evolution of flat band and Van-Hove singularities with evolution of interlayer coupling in TBG. A simple tight binding Hamiltonian with environment dependent interlayer hopping and incorporated with internal configuration of carbon atoms inside a supercell is used to calculate band dispersion and density of states in TBG. Various Hamiltonian parameters and functional form of interlayer hopping applicable to a wide range of twist angles in TBG is estimated by fitting calculated dispersion and density of states with available experimentally observed dispersion and density of states in Graphene, AB-stacked bilayer graphene and some TBG systems. Computationally obtained band dispersion reveal that flat band in TBG occurs very close to Dirac point of graphene and only along linear dimension of two-dimensional wave vector space connecting two closest Dirac points of two graphene layers of TBG.

cond-mat.mes-hall↗

Emergence of giant orbital Hall and tunable spin Hall effects in centrosymmetric TMDs

We demonstrate the formation of orbital and spin Hall effects (OHE/SHE) in the 1T phase of non-magnetic transition metal dichalcogenides. With the aid of density functional theory calculations and model Hamiltonian studies on MX$_2$ (M = Pt, Pd and X = S, Se, and Te), we show an intrinsic orbital Hall conductivity ($\sim 10^3 \hbar /e\ Ω^{-1}cm^{-1}$) , which primarily emerges due to the orbital texture around the valleys in the momentum space. The robust spin-orbit coupling in these systems induces a sizable SHE out of OHE. Furthermore, to resemble the typical experimental setups, where the magnetic overlayers produce a proximity magnetic field, we examine the effect of magnetic field on OHE and SHE and showed that the latter can be doubled in these class of compounds. With a giant OHE and tunable SHE, the 1T-TMDs are promising candidates for spin and orbital driven quantum devices such as SOT-MRAM, spin nano-oscillators, spin logic devices etc., and to carry out spin-charge conversion experiments for fundamental research.

cond-mat.mes-hall↗

Doping induced singlet to triplet superconducting transition in Ba$_{2}$CuO$_{3+δ}$

In this study, we perform a numerical simulation on the recently discovered high-temperature superconductor ($T_c$= 73K) Ba$_2$CuO$_{3.2}$ \cite{lietal} while focusing on doping dependence of alternating CuO$_6$ octahedra and CuO chain-like states. Employing the multiband random-phase approximation, we compute the spin-fluctuation mediated pairing interaction, subsequently determining its pairing eigenvalues and eigenfunctions relative to oxygen-doping levels. We find that, for the certain range of hole doping in Ba$_2$CuO$_{3+δ}$, a singlet $d_{x^2-y^2}$-wave pairing symmetry emerges as long as we keep the doping below the critical value $x_{c}$. Interestingly upon hole doping, the dominant pairing symmetry undergoes a transition to a triplet (odd paring) type from the singlet state. This change in pairing is driven by the competition between the nesting vectors coming from the Fermi surface of $d_{z^2}$ and $d_{x^2-y^2}$ orbitals within the CuO$_6$ octahedra. This triplet state is attainable through hole doping, while supressing inter-layer self-doping effects. Furthermore, we present the density of states within the superconducting phase, offering a potential comparison with tunnelling spectra in Ba$_2$CuO$_{3+δ}$. Our research provides novel insights into the intricate pairing symmetries in Ba$_2$CuO$_{3+δ}$ and their underlying pairing mechanisms.

cond-mat.supr-con↗

Formation of spin-orbital entangled 2D electron gas in layer delta-doped bilayer iridate La$_δ$Sr$_3$Ir$_2$O$_7$

5$d$ transition metal oxides host a variety of exotic phases due to the comparable strength of Coulomb repulsion and spin-orbit coupling. Herein, by pursuing density-functional studies on a delta-doped quasi-two-dimensional iridate Sr$_3$Ir$_2$O$_7$, where a single SrO layer is replaced by LaO layer, we predict the formation of a spin-orbital entangled two-dimensional electron gas (2DEG) which is sharply confined on two IrO$_2$ layers close to the LaO layer. In this bilayer crystal structure, an existing potential well is further augmented with the inclusion of positively charged LaO layer which results in confining the extra valence electron made available by the La$^{3+}$ ion. The confined electron is bound along crystal $a$ direction and is highly mobile in the $bc$ plane. From the band structure point of view, now the existing half-filled $J_{eff}$ = 1/2 states are further electron doped to destroy the antiferromagnetic Mott insulating state of IrO$_2$ layers near to the delta-doped layer. This leads to partially occupied Ir upper-Hubbard subbands which host the spin-orbital entangled 2DEG. The IrO$_2$ layers far away from the interface remain insulating and preserve the collinear G-type magnetic ordering of pristine Sr$_3$Ir$_2$O$_7$. The conductivity tensors calculated using semi-classical Boltzmann theory at room temperature reveal that the 2DEG exhibits large electrical conductivity of the order of 10$^{19}$.

cond-mat.mtrl-sci↗