SearcharxivSearch

arXiv subjects

B. Shi

Publications and source records attributed to B. Shi.

2 recordsLinked to original sources

Cascaded quantum time transfer breaking the no-cloning barrier with entanglement relay architecture

Quantum two-way time transfer (Q-TWTT) leveraging energy-time entangled biphotons has achieved sub-picosecond stability but faces fundamental distance limitations due to the no-cloning theorem's restriction on quantum amplification. To overcome this challenge, we propose a cascaded Q-TWTT architecture employing relay stations that generate and distribute new energy-time entangled biphotons after each transmission segment. Theoretical modeling reveals sublinear standard deviation growth (merely N increase for N equidistant segments), enabling preservation of sub-picosecond stability over extended distances. We experimentally validate this approach using a three-station cascaded configuration over 200 km fiber segments, demonstrating strong agreement with theory. Utilizing independent Rb clocks at end and relay stations with online frequency skew correction, we achieve time stabilities of 3.82 ps at 10 s and 0.39 ps at 5120 s. The consistency in long-term stability between cascaded and single-segment configurations confirms high-precision preservation across modular quantum networks. This work establishes a framework for long-distance quantum time transfer that surpasses the no-cloning barrier, providing a foundation for future quantum-network timing infrastructure.

quant-ph

Defect engineering in oxide heterostructures by enhanced oxygen surface exchange

The synthesis of materials with well-controlled composition and structure improves our understanding of their intrinsic electrical transport properties. Recent developments in atomically controlled growth have been shown to be crucial in enabling the study of new physical phenomena in epitaxial oxide heterostructures. Nevertheless, these phenomena can be influenced by the presence of defects that act as extrinsic sources of both doping and impurity scattering. Control over the nature and density of such defects is therefore necessary, are we to fully understand the intrinsic materials properties and exploit them in future device technologies. Here, we show that incorporation of a strontium copper oxide nano-layer strongly reduces the impurity scattering at conducting interfaces in oxide LaAlO3-SrTiO3(001) heterostructures, opening the door to high carrier mobility materials. We propose that this remote cuprate layer facilitates enhanced suppression of oxygen defects by reducing the kinetic barrier for oxygen exchange in the hetero-interfacial film system. This design concept of controlled defect engineering can be of significant importance in applications in which enhanced oxygen surface exchange plays a crucial role.

cond-mat.mtrl-sci