Bahareh Ghadiani | Searcharxiv

arXiv2018

Ultralow-power chip-based soliton microcombs for photonic integration

The generation of dissipative Kerr solitons in optical microresonators has provided a route to compact frequency combs of high repetition rate, which have already been employed for optical frequency synthesizers, ultrafast ranging, coherent telecommunication and dual-comb spectroscopy. Silicon nitride (Si$_3$N$_4$) microresonators are promising for photonic integrated soliton microcombs. Yet to date, soliton formation in Si$_3$N$_4$ microresonators at electronically detectable repetition rates, typically less than 100 GHz, is hindered by the requirement of external power amplifiers, due to the low quality ($Q$) factors, as well as by thermal effects which necessitate the use of frequency agile lasers to access the soliton state. These requirements complicate future photonic integration, heterogeneous or hybrid, of soliton microcomb devices based on Si$_3$N$_4$ microresonators with other active or passive components. Here, using the photonic Damascene reflow process, we demonstrate ultralow-power single soliton formation in high-Q ($Q_0>15\times10^6$) Si$_3$N$_4$ microresonators with 9.8 mW input power (6.2 mW in the waveguide) for devices of electronically detectable, 99 GHz repetition rate. We show that solitons can be accessed via simple, slow laser piezo tuning, in many resonances in the same sample. These power levels are compatible with current silicon-photonics-based lasers for full photonic integration of soliton microcombs, at repetition rates suitable for applications such as ultrafast ranging and coherent communication. Our results show the technological readiness of Si$_3$N$_4$ optical waveguides for future all-on-chip soliton microcomb devices.

physics.optics↗

arXiv2018

Probing the loss origins of ultra-smooth $\mathrm{Si_3N_4}$ integrated photonic waveguides

On-chip optical waveguides with low propagation losses and precisely engineered group velocity dispersion (GVD) are important to nonlinear photonic devices such as soliton microcombs. Yet, despite intensive research efforts, nonlinear integrated photonic platforms still feature propagation losses orders of magnitude higher than in standard optical fiber. The tight confinement and high index contrast of integrated waveguides make them highly susceptible to fabrication induced surface roughness. Therefore, microresonators with ultra-high Q factors are, to date, only attainable in polished bulk crystalline, or chemically etched silica based devices, that pose however challenges for full photonic integration. Here, we demonstrate the fabrication of silicon nitride ($\mathrm{Si_3N_4}$) waveguides with unprecedentedly smooth sidewalls and tight confinement with record low propagation losses. This is achieved by combining the photonic Damascene process with a novel reflow process, which reduces etching roughness, while sufficiently preserving dimensional accuracy. This leads to previously unattainable \emph{mean} microresonator Q factors larger than $5\times10^6$ for tightly confining waveguides with anomalous dispersion. Via systematic process step variation and two independent characterization techniques we differentiate the scattering and absorption loss contributions, and reveal metal impurity related absorption to be an important loss origin. Although such impurities are known to limit optical fibers, this is the first time they are identified, and play a tangible role, in absorption of integrated microresonators. Taken together, our work provides new insights in the origins of propagation losses in $\mathrm{Si_3N_4}$ waveguides and provides the technological basis for integrated nonlinear photonics in the ultra-high Q regime.

physics.app-ph↗