arXiv subjects

Baisheng Sa

Publications and source records attributed to Baisheng Sa.

10 recordsLinked to original sources

arXiv2026

Surface Functionalization Enables Two-Dimensional Altermagnetism and Giant Tunnel Magnetoresistance

Two-dimensional (2D) altermagnets (AMs) are highly desirable for ultrafast, stray-field-free spintronics because they combine compensated magnetic order and momentum-dependent spin splitting with the scalability, tunability, and interface compatibility of atomically thin materials. However, practical 2D AMs remain scarce. Rather than relying solely on the search for intrinsic 2D AMs, an appealing route is to transform known 2D antiferromagnets (AFMs) into AMs through symmetry engineering. Here, we propose surface functionalization as a symmetry-guided, nonvolatile chemical switch for realizing this AFM-to-AM transformation. By breaking inversion and out-of-plane mirror symmetries while preserving the rotation symmetry connecting opposite-spin sublattices, single-sided functionalization lifts spin degeneracy and induces altermagnetic spin splitting. Using monolayer FeSe as a representative platform, first-principles calculations show that hydrogenation, oxidation, and fluorination convert spin-degenerate antiferromagnetic FeSe into a d-wave AM with pronounced momentum-dependent spin splitting. At the device level, our transport simulations reveal that the functionalized FeSe monolayer magnetic tunnel junctions exhibit giant tunnel magnetoresistance (TMR) up to $1.87\times10^3\%$, originating from momentum-selective spin filtering between parallel and antiparallel Néel-vector configurations. The strong dependence of TMR on functionalization geometry further demonstrates that surface chemistry provides an effective control knob for altermagnetic transport. Our work establishes a symmetry-to-chemistry-to-device strategy for engineering 2D AMs and developing high-performance altermagnetic spintronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Experimental Realization of the Topologically Nontrivial Phase in Monolayer Si$_2$Te$_2$

The free-standing monolayer Si$_2$Te$_2$ (ML-Si$_2$Te$_2$) has been theoretically predicted to host a room-temperature quantum spin Hall phase. However, its experimental realization remains challenge due to the absence of a three-dimensional counterpart. Here, we demonstrate that HfTe$_2$ serves as an ideal substrate for the epitaxial growth of ML-Si$_2$Te$_2$, preserving its topological phase. Scanning tunneling microscopy and spectroscopy confirm a strain-free ${(1 \times 1)}$ lattice of ML-Si$_2$Te$_2$, along with a sizable band gap, which is well captured by first-principles calculations. Moreover, distinct edge states, independent of step geometry and exhibiting a broad spatial distribution, are observed at ML-Si$_2$Te$_2$ step edges, underscoring its topological nature.

cond-mat.mtrl-sci↗

arXiv2025

Altermagnetizing the FeSe-like two-dimensional materials and approaching to giant tunneling magnetoresistance with Janus Cr4BN(B2) MBene electrode

Altermagnetism is an emerging series of unconventional magnetic materials characterized by time-reversal symmetry breaking and spin-split bands in the momentum space with zero net magnetization. Metallic altermagnets offer unique advantages for exploring applications in spintronics as conductive metals allows for serving as electrode in magnetic tunneling junction (MTJ) and/or manipulation of spincurrent through external field. Through density functional theory calculations, the 2D altermagnet Cr4B3N was predicted to be stable, resulting from a N atom substitution in the FeSe-like CrB bilayer. Both intra- and inter-layered magnetic exchanges between Cr atoms are in antiferromagnetic with the first three neighbours. Leveraging the anisotropic spin-splittings with momentum dependency revealed in band structure, we designed three edge dependent Cr4B3N/square/Cr4B3N in-plane MTJs with the 7 Åvaccume the barrie. We found that the Cr-B vertical edge-assembled electrodes based MTJs exhibited giant tunneling magnetoresistance (TMR) ratios of 91001% , by aligning the conduction channels of the electrodes in parallel and anti-parallel states in the momentum space. Our work deepens and generalizes understanding toward altermagnetic 2D metallic electrode with a newly established metal boride (MBene), and broadens applications of the nanoscale spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Epitaxial growth of a two-dimensional topological insulator candidate: monolayer Si2Te2

Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material have mainly been restricted to theoretical calculations because its bulk counterpart does not exist naturally. Here, we report on the successful epitaxial growth of ML-Si2Te2 films on Sb2Te3 thin film substrates. High-quality (1*1) ML-Si2Te2 films with a coverage as high as 95% were obtained as revealed by scanning tunneling microscopy. X-ray photoelectron spectroscopy confirms the absence of intermixing between Si2Te2 and Sb2Te3 at the interface. By combining scanning tunneling spectroscopy with density functional theory calculations, we demonstrate the semiconducting band structure of ML-Si2Te2 on Sb2Te3. Furthermore, it is theoretically predicted that the system can be driven into the nontrivial phase via reducing the strain by 4.4% using strain engineering. Our results pave the way for in-depth investigations on this 2D topological insulator candidate.

cond-mat.mtrl-sci↗

arXiv2020

Prediction of superconductivity and topological aspects in single-layer $β$-Bi$_{2}$Pd

Topological superconductors, characterized by topologically nontrivial states residing in a superconducting gap, are a recently discovered class of materials having Majorana Fermions. The interplay of superconductivity and topological states give rise to opportunities for achieving such topological superconductors in condensed matter systems. Up to now, several single-material topological superconductors in this form have been theoretically predicted and experimentally confirmed. Here, using the first-principles calculations, we study the superconducting single-layer $β$-Bi$_{2}$Pd. The electronic density of states near Fermi level of this monolayer are dominated by the Bi-p and Pd-d orbitals, forming a two-band Fermi surface with multi-class sheets. The presence of soft phonon bands, in cooperation with the electron susceptibility, account for electron-phonon superconductivity of single-layer $β$-Bi$_{2}$Pd. With the centrosymmetric structure, single-layer $β$-Bi$_{2}$Pd possesses a continuous gap over the whole Brillouin zone and topological Dirac-like states at its one-dimensional boundary. The present findings would lead to the expectation of one-dimensional topological superconductivity and Majorana bound states in monolayer candidate of $β$-Bi$_{2}$Pd with intrinsic full-gap superconductivity.

cond-mat.mtrl-sci↗

arXiv2020

Switchable Atomically Thin 2D Electrides from First-principles Prediction

Electrides, with excess anionic electrons confined in their empty space, are promising for uses in catalysis, nonlinear optics and spin-electronics. However, the application of electrides is limited by their high chemical reactivity with the environmental agents. In this work, we report the discovery of a group of two-dimensional (2D) moonolayer electrides with the presence of switchable nearly free electron (NFE) states in their electronic structures. Unlike conventional electrides, which are metals with floating electrons forming the partially occupied bands close to the Fermi level, the switchable electrides are chemically much less active semiconductors holding the NFE states that are 0.3-1.5 eV above the Fermi level. According to a high throughput search, we identified 12 2D candidates that possess such low-energy NFE states. Among them, 11 2D materials can likely be exfoliated from the known layered materials. Under external forces, such as a compressive strain, these NFE states stemming from the surface image potential will be pushed downward to cross the Fermi level. Remarkably, the critical semiconductor-metal transition can be achieved by a strain as low as 3% in 2D monolayer Na$_2$Pd$_3$O$_4$. As such, the switchable 2D electrides may provide an ideal platform for exploring novel quantum phenomena and modern electronic device applications.

cond-mat.mtrl-sci↗

arXiv2015

The electronic origin of shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene

Artificial monolayer black phosphorus, the so-called phosphorene has attracted global interest with its distinguished anisotropic optoelectronic and electronic properties. Here, we unraveled the shear-induced direct to indirect gap transition and anisotropy diminution in phosphorene based on first-principles calculations. Lattice dynamic analysis demonstrated that phosphorene can sustain up to 10% applied shear strain. The band gap of phosphorene experiences a direct to indirect transition when 5% shear strain is applied. The electronic origin of direct to indirect gap transition from 1.54 eV at ambient condition to 1.22 eV at 10% shear strains for phosphorene was explored and the anisotropy diminution in phosphorene is discussed by calculating the maximum sound velocities, effective mass and decomposed charge density, which signals the undesired shear-induced direct to indirect gap transition in the applications of phosphorene for electronics and optoelectronics. On the other hand, the shear-induced electronic anisotropy properties suggest that phosphorene can be applied as the switcher in the nano electronic applications.

cond-mat.mtrl-sci↗

arXiv2015

Theoretical investigation on the transition metal borides with Ta3B4-type structure: a class of hard and refractory materials

Based on density functional theory, we have systematically studied the structural stability, mechanical properties and chemical bonding of the transition metal borides M3B4 (M=Ti, V, Cr, Zr, Nb, Mo, Hf, Ta, and W) for the first time. All the present studied M3B4 have been demonstrated to be thermodynamically and mechanically stable. The bulk modulus, shear modulus, Young's modulus, Poisson's ratio, microhardness, Debye temperature and anisotropy have been derived for ideal polycrystalline M3B4 aggregates. In addition, the relationship between Debye temperature and microhardness has been discussed for these isostructral M3B4. Furthermore, the results of the Cauchy pressure, the ratio of bulk modulus to shear modulus, and Poisson's ratio suggest that the valence electrons of transition metals play an important role in the ductility of M3B4. The calculated total density of states for M3B4 indicates that all these borides display a metallic conductivity. By analyzing the electron localization function, we show that the improvement of the ductility in these M3B4 might attribute to the decrease of their angular bonding character.

cond-mat.mtrl-sci↗

arXiv2015

Mechanical properties and electronic structure of the incompressible rhenium carbides and nitrides: A first-principles study

By means of first-principles calculations, the structural stability, mechanical properties and electronic structure of the newly synthesized incompressible Re2C, Re2N, Re3N and an analogous compound Re3C have been investigated. Our results agree well with the available experimental and theoretical data. The proposed Re3C is shown to be energetically, mechanically and dynamically stable and also incompressible. Furthermore, it is suggested that the incompressibility of these compounds is originated from the strong covalent bonding character with the hybridization of 5d orbital of Re and the 2p orbital of C or N, and a zigzag topology of interconnected bonds, e.g., Re-Re, Re-C or Re-N bonding.

cond-mat.mtrl-sci↗

arXiv2014

Strain Engineering for Phosphorene: The Potential Application as a Photocatalyst

Phosphorene has been attracted intense interest due to its unexpected high carrier mobility and distinguished anisotropic optoelectronic and electronic properties. In this work, we unraveled strain engineered phosphorene as a photocatalyst in the application of water splitting hydrogen production based on density functional theory calculations. Lattice dynamic calculations demonstrated the stability for such kind of artificial materials under different strains. The phosphorene lattice is unstable under compression strains and could be crashed. Whereas, phosphorene lattice shows very good stability under tensile strains. Further guarantee of the stability of phosphorene in liquid water is studied by ab initio molecular dynamics simulations. Tunable band gap from 1.54 eV at ambient condition to 1.82 eV under tensile strains for phosphorene is evaluated using parameter-free hybrid functional calculations. Appropriate band gaps and band edge alignments at certain pH demonstrate the potential application of phosphorene as a sufficiently efficient photocatalyst for visible light water splitting. We found that the strained phosphorene exhibits significantly improved photocatalytic properties under visible-light irradiation by calculating optical absorption spectra. Negative splitting energy of absorbed H2O indicates the water splitting on phosphorene is energy favorable both without and with strains.

cond-mat.mtrl-sci↗