arXiv subjects

Bao-Chuan Wang

Publications and source records attributed to Bao-Chuan Wang.

15 recordsLinked to original sources

arXiv2026

Phonon-assisted transport and hole-phonon coupling in GaAs double quantum dots

Hole-phonon interactions play an important role in transport and decoherence processes in semiconductor quantum dots. Here we investigate hole-phonon coupling in a gate-defined GaAs double quantum dot integrated with a quantum point contact charge sensor. Under finite source-drain bias, pronounced oscillatory stripe patterns appear near specific charge transition regions in the charge stability diagram. We attribute these oscillations to phonon emission during inelastic interdot tunneling. A theoretical model including piezoelectric hole-phonon coupling reproduces the observed patterns. Furthermore, our analysis shows that the oscillations emerge only in particular charge configurations. Our results provide direct insight into phonon-assisted transport and coherent hole-phonon interactions in semiconductor quantum dots.

cond-mat.mes-hall↗

arXiv2026

On-chip Parametric Amplification in a Double Quantum Dots Circuit

In microwave-based quantum circuits, including double quantum dots (DQDs), superconducting qubits and spin qubits, parametric amplifiers are indispensable in achieving high-fidelity qubit readouts. Despite its importance, the application of parametric amplifiers is hampered by several challenges, such as high insertion losses, constrained tunability, and a pronounced vulnerability to magnetic fields. Here, we demonstrate an on-site single-atom parametric amplifier (SAPA) within a reconfigurable quantum circuit, which consists of a superconducting microwave cavity and two GaAs gate-defined DQDs. Leveraging the inherent nonlinearity of the DQD, a parametric gain exceeding 11 dB is achieved. This gain contributes to enhance the qubit readout, as evidenced by exceeding two times improvement in the signal-to-noise ratio (SNR) when employing the DQD-based amplifier for reading out another DQD. Our work not only presents a versatile experimental platform with enhanced readout capabilities in quantum computing, but also introduces alternative choices of parametric amplifiers for a variety of microwave-based quantum circuits.

quant-ph↗

arXiv2026

Cryogenic interface-state filling and tunneling mechanisms in strained Ge/SiGe heterostructures

Traps at the semiconductor-oxide interface are considered as a major source of instability in strained Ge/SiGe quantum devices, yet the quantified study of their cryogenic behavior remains limited. In this work, we investigate interface-state trapping using Hall-bar field-effect transistors fabricated on strained Ge/SiGe heterostructures. Combining transport measurements with long-term stabilization and Schrödinger-Poisson modelling, we reconstruct the gradual filling process of interface states at cryogenic condition. Using the calculated valence band profiles, we further evaluate the tunneling current density between the quantum well and the semiconductor-oxide interface. Our calculation demonstrates that the total tunneling current is consistent with a crossover from trap-assisted-tunneling-dominated transport to Fowler-Nordheim-tunneling-dominated transport under different gate bias regimes. These results refine the conventional Fowler-Nordheim-based picture of interface trapping in strained Ge/SiGe heterostructures and provide guidelines for improving Ge-based quantum device performance by improving barrier crystalline qualities and reducing dislocation-related trap densities.

cond-mat.mes-hall↗

arXiv2024

Revealing spin-flip two-level systems using ultra-thin film superconducting resonators

Material disorders are one of the major sources of noise and loss in solid-state quantum devices, whose behaviors are often modeled as two-level systems (TLSs) formed by charge tunneling between neighboring sites. However, the role of their spins in tunneling and its impact on device performance remain highly unexplored. In this work, employing ultra-thin TiN superconducting resonators, we reveal anomalous TLS behaviors by demonstrating an unexpected increase in resonant frequency at low magnetic fields. Furthermore, a spin-flip TLS model is proposed, in which an effective spin-orbit coupling is generated by inhomogeneous local magnetic fields from defect spins. This mechanism mixes charge tunnelings and spin flips, quantitatively reproducing the observed frequency-field relationship and its temperature dependence. This work deepens the understanding of spin-dependent TLS behaviors, offering the possibility of magnetically engineering noise and loss in solid-state quantum devices.

cond-mat.mes-hall↗

arXiv2024

Highly tunable 2D silicon quantum dot array with coupling beyond nearest neighbors

Scaling up quantum dots to two-dimensional (2D) arrays is a crucial step for advancing semiconductor quantum computation. However, maintaining excellent tunability of quantum dot parameters, including both nearest-neighbor and next-nearest-neighbor couplings, during 2D scaling is challenging, particularly for silicon quantum dots due to their relatively small size. Here, we present a highly controllable and interconnected 2D quantum dot array in planar silicon, demonstrating independent control over electron fillings and the tunnel couplings of nearest-neighbor dots. More importantly, we also demonstrate the wide tuning of tunnel couplings between next-nearest-neighbor dots,which plays a crucial role in 2D quantum dot arrays. This excellent tunability enables us to alter the coupling configuration of the array as needed. These results open up the possibility of utilizing silicon quantum dot arrays as versatile platforms for quantum computing and quantum simulation.

cond-mat.mes-hall↗

arXiv2024

Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot

Electron spin qubits in silicon are a promising platform for fault-tolerant quantum computing. Low-frequency noise, including nuclear spin fluctuations and charge noise, is a primary factor limiting gate fidelities. Suppressing this noise is crucial for high-fidelity qubit operations. Here, we report on a two-qubit quantum device in natural silicon with universal qubit control, designed to investigate the upper limits of gate fidelities in a non-purified Si/SiGe quantum dot device. By employing advanced device structures, qubit manipulation techniques, and optimization methods, we have achieved single-qubit gate fidelities exceeding 99% and a two-qubit Controlled-Z (CZ) gate fidelity of 91%. Decoupled CZ gates are used to prepare Bell states with a fidelity of 91%, typically exceeding previously reported values in natural silicon devices. These results underscore that even natural silicon has the potential to achieve high-fidelity gate operations, particularly with further optimization methods to suppress low-frequency noise.

cond-mat.mes-hall↗

arXiv2023

Ultrafast switchable spin-orbit coupling for silicon spin qubits via spin valves

Recent experimental breakthroughs, particularly for single-qubit and two-qubit gates exceeding the error correction threshold, highlight silicon spin qubits as leading candidates for fault-tolerant quantum computation. In the existing architecture, intrinsic or synthetic spin-orbit coupling (SOC) is critical in various aspects, including electrical control, addressability, scalability, etc. However, the high-fidelity SWAP operation and quantum state transfer (QST) between spin qubits, crucial for qubit-qubit connectivity, require the switchable nature of SOC which is rarely considered. Here, we propose a flexible architecture based on spin valves by electrically changing its magnetization orientation within sub-nanoseconds to generate ultrafast switchable SOC. Based on the switchable SOC architecture, both SWAP operation of neighbor spin qubits and resonant QST between distant spins can be realized with fidelity exceeding 99% while considering the realistic experimental parameters. Benefiting from the compatible processes with the modern semiconductor industry and experimental advances in spin valves and spin qubits, our results pave the way for future construction of silicon-based quantum chips.

cond-mat.mes-hall↗

arXiv2023

Coupling of hole double quantum dot in planar germanium to a microwave cavity

In recent years, notable progress has been made in the study of hole qubits in planar germanium, and circuit quantum electrodynamics (circuit QED) has emerged as a promising approach for achieving long-range coupling and scaling up of qubits. Here, we demonstrate the coupling between holes in a planar germanium double quantum dot (DQD) and photons in a microwave cavity. Specifically, a real-time calibrated virtual gate method is developed to characterize this hybrid system, which in turn allows us to determine the typical parameters sequentially through single-parameter fitting instead of conventional multi-parameter fitting with additional uncertainty, and gives the hole-photon coupling rate of $g_0/2π$ = 21.7 MHz. This work is a step toward further research on hole-photon interactions and long-range qubit coupling in planar germanium. The experimental method developed in this work contributes to the more accurate and efficient characterization of hybrid cavity-QED systems.

cond-mat.mes-hall↗

arXiv2022

Probing two driven double quantum dots strongly coupled to a cavity

We experimentally and theoretically study a driven hybrid circuit quantum electrodynamics (cQED) system beyond the dispersive coupling regime. Treating the cavity as part of the driven system, we develop a theory applicable to such strongly coupled and to multi-qubit systems. The fringes measured for a single driven double quantum dot (DQD)-cavity setting and the enlarged splittings of the hybrid Floquet states in the presence of a second DQD are well reproduced with our model. This opens a path to study Floquet states of multi-qubit systems with arbitrarily strong coupling and reveals a new perspective for understanding strongly driven hybrid systems.

cond-mat.mes-hall↗

arXiv2021

Floquet state depletion in ac-driven circuit QED

We perform Floquet spectroscopy in a GaAs double quantum dot system coupled to a high-impedance superconducting resonator. By applying microwave induced consecutive passages under a double resonance condition, we observe novel Landau-Zener-Stückelberg-Majorana interference patterns that stem from a cavity-assisted interference pattern modified by the depletion of the ground state. Our experimental results reveal the stationary state behavior of a strongly driven two-level system, and are consistent with the simulations based on our theoretical model. This study provides an excellent platform for investigating the dynamics of Floquet states in the presence of strong driving.

cond-mat.mes-hall↗

arXiv2021

Microwave-resonator-detected excited-state spectroscopy of a double quantum dot

As an application in circuit quantum electrodynamics (cQED) coupled systems, superconducting resonators play an important role in high-sensitivity measurements in a superconductingsemiconductor hybrid architecture. Taking advantage of a high-impedance NbTiN resonator, we perform excited-state spectroscopy on a GaAs double quantum dot (DQD) by applying voltage pulses to one gate electrode. The pulse train modulates the DQD energy detuning and gives rise to charge state transitions at zero detuning. Benefiting from the outstanding sensitivity of the resonator, we distinguish different spin-state transitions in the energy spectrum according to the Pauli exclusion principle. Furthermore, we experimentally study how the interdot tunneling rate modifies the resonator response. The experimental results are consistent with the simulated spectra based on our model.

cond-mat.mes-hall↗

arXiv2020

Correlated spectrum of distant semiconductor qubits coupled by microwave photons

We develop a new spectroscopic method to quickly and intuitively characterize the coupling of two microwave-photon-coupled semiconductor qubits via a high-impedance resonator. Highly distinctive and unique geometric patterns are revealed as we tune the qubit tunnel couplings relative to the frequency of the mediating photons. These patterns are in excellent agreement with a simulation using the Tavis-Cummings model, and allow us to readily identify different parameter regimes for both qubits in the detuning space. This method could potentially be an important component in the overall spectroscopic toolbox for quickly characterizing certain collective properties of multiple cavity QED coupled qubits.

cond-mat.mes-hall↗

arXiv2017

A tunable hybrid qubit in a triple quantum dot

We experimentally demonstrate quantum coherent dynamics of a triple-dot-based multi-electron hybrid qubit. Pulsed experiments show that this system can be conveniently initialized, controlled, and measured electrically, and has good coherence time as compared to gate time. Furthermore, the current multi-electron hybrid qubit has an operation frequency that is tunable in a wide range, from 2 to about 15 GHz. We provide qualitative understandings of the experimental observations by mapping it onto a three-electron system, and compare it with the double dot hybrid qubit and the all-exchange triple-dot qubit.

cond-mat.mes-hall↗

arXiv2016

Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot

Asymmetry in a three-electron double quantum dot (DQD) allows spin blockade, when spin-3/2 (quadruplet) states and spin-1/2 (doublet) states have different charge configurations. We have observed this DQD spin blockade near the (1,2)-(2,1) charge transition using a pulsed-gate technique and a charge sensor. We then use this spin blockade to detect Landau-Zener-Stückelberg (LZS) interference and coherent oscillations between the spin quadruplet and doublet states. Such studies add to our understandings of coherence and control properties of three-spin states in a double dot, which in turn would benefit the explorations into various qubit encoding schemes in semiconductor nanostructures.

cond-mat.mes-hall↗

arXiv2016

Tunable Hybrid Qubit in a GaAs Double Quantum Dot

We experimentally demonstrate a tunable hybrid qubit in a five-electron GaAs double quantum dot. The qubit is encoded in the (1,4) charge regime of the double dot and can be manipulated completely electrically. More importantly, dot anharmonicity leads to quasiparallel energy levels and a new anticrossing, which help preserve quantum coherence of the qubit and yield a useful working point. We have performed Larmor precession and Ramsey fringe experiments near the new working point and find that the qubit decoherence time is significantly improved over a charge qubit. This work shows a new way to encode a semiconductor qubit that is controllable and coherent.

cond-mat.mes-hall↗