arXiv subjects

Baoshun Zhang

Publications and source records attributed to Baoshun Zhang.

7 recordsLinked to original sources

arXiv2026

A CMOS-compatible, scalable and compact magnetoelectric spin-torque microwave detector

The development of compact and highly sensitive microwave detectors compatible with complementary-metal-oxide-semiconductor (CMOS) processes is an active research area but remains a major challenge in microwave technology. Spin-torque diodes (STDs) are emerging nanoscale spintronic devices capable of surpassing the theoretical thermodynamic sensitivity limits of Schottky diodes. However, their practical use in compact systems is limited by the need of external antennas or probes. Here, we demonstrate a magnetoelectric (ME) spin-torque microwave detector that monolithically integrates an ME antenna with a magnetic tunnel junction (MTJ). The device directly converts wireless electromagnetic signals into a DC output at sub-microwatt power levels, achieving a sensitivity greater than 90 kV/W, a noise equivalent power of 3 pW*Hz^-0.5, and a compact footprint of 0.4 mm^2. This performance is due to the nonlinear coupling between incoherent magnetization dynamics, driven by a DC current in the MTJ, and the combined effects of the microwave voltage and strain generated by the ME antenna under incident electromagnetic waves. We further show that this design is scalable, enabling the co-integration of an ME antenna with an array of MTJs. A detector incorporating four MTJs, for example, exhibits a sensitivity exceeding 400 kV/W. This work paves the way for a new generation of highly sensitive, compact and scalable microwave detectors that combine ME antennas and spintronic diodes.

cond-mat.mes-hall↗

arXiv2025

Topological spin-torque diode effect in skyrmion-based magnetic tunnel junctions

The growing market and massive use of Internet of Things nodes is placing unprecedented demands of energy efficient hardware for edge computing and microwave devices. In particular, magnetic tunnel junctions (MTJs), as main building blocks of spintronic microwave technology, can offer a path for the development of compact and high-performance microwave detectors. On the other hand, the fascinating field of skyrmionics is bridging together concepts from topology and spintronics. Here, we show the proof of concept of the direct electrical excitation and detection of the dynamics of a topological protected magnetic texture, i.e. skyrmion at room temperature and for a wide region of applied fields, including the zero field case. This topological spin torque diode is realized with an MTJ on top of a skyrmionic material. Quantitative Magnetic Force Microscopy measurements are employed to confirm the existence of a single skyrmion in the MTJ free layer. Spin torque diode electrical measurements show the electrical excitation via spin transfer torque (STT) of a skyrmion resonant mode with frequencies near 4 GHz and a selectivity one order of magnitude smaller than the uniform modes excited in the same device. Micromagnetic simulations identify these dynamics with the excitation of the breathing mode and point out the role of thickness dependent magnetic parameters (magnetic anisotropy field and Dzyaloshinkii Moriya interaction) in both stabilizing and exciting the magnetic skyrmions. This work marks a milestone for the development of topological spin torque diodes.

cond-mat.mes-hall↗

arXiv2019

Demonstration of beta-Ga2O3 Optical Waveguides and the Analysis of Their Propagation Losses in the UV-Visible Spectra

This paper reports the first demonstration of beta-phase gallium oxide as optical waveguides on sapphire substrates grown by metal-organic chemical vapor deposition (MOCVD). The propagation losses from visible to ultraviolet spectra were comprehensively studied. By optimizing the fabrication processes, minimum propagation loss was identified to be 3.7 dB/cm at the wavelength of 810 nm, which is comparable to other wide bandgap materials within the III-N family (GaN, AlN). To further reveal the underlying loss mechanisms, several physical mechanisms such as two-photon absorption, sidewall scattering, top surface scattering, and bulk scattering were taken into consideration. The results obtained from this work suggest that beta-Ga2O3 is promising for ultraviolet-visible spectrum integrated photonic applications.

physics.optics↗

arXiv2018

Spintronic nano-scale harvester of broadband microwave energy

The harvesting of ambient radio-frequency (RF) energy is an attractive and clean way to realize the idea of self-powered electronics. Here we present a design for a microwave energy harvester based on a nanoscale spintronic diode (NSD). This diode contains a magnetic tunnel junction with a canted magnetization of the free layer, and can convert RF energy over the frequency range from 100 MHz to 1.2 GHz into DC electric voltage. An attractive property of the developed NSD is the generation of an almost constant DC voltage in a wide range of frequencies of the external RF signals. We further show that the developed NSD provides sufficient DC voltage to power a low-power nanodevice - a black phosphorus photo-sensor. Our results demonstrate that the developed NSD could pave the way for using spintronic detectors as building blocks for self-powered nano-systems, such as implantable biomedical devices, wireless sensors, and portable electronics.

physics.app-ph↗

arXiv2017

High-efficiency spontaneous terahertz emission from electrically-excited plasmons in AlGaN/GaN two-dimensional electron gas

The advance of terahertz science and technology yet lays wait for the breakthrough in high-efficiency and high-power solid-state terahertz sources applicable at room temperature. Plasmon in two-dimensional electron gas (2DEG) has long been pursued as a type of promising active medium for terahertz emitters. However, a high wall-plug efficiency sufficient for high-power operation has not been achieved. Here we report spontaneous terahertz emission tunable in a frequency range from 0.3 to 2.5 THz through electrical excitation of plasmon or plasmon-polariton modes in a grating-gate coupled AlGaN/GaN 2DEG at 7 K. A wall-plug efficiency ranging from $10^{-6}$ to $10^{-1}$ is found by tuning the energy (4.5 eV to 0.5 eV) of tunneling electrons between the grating gates and the 2DEG. The total emission power, albeit below 15 nW, is already detectable by using a direct terahertz field-effect transistor detector based on the same type of 2DEG. The findings indicate that both high-efficiency and high-power terahertz plasmon-polariton emission could be obtained by a proper injection of tunneling electrons with low energy and high current density.

cond-mat.mes-hall↗

arXiv2014

Giant spin-torque diode sensitivity at low input power in the absence of bias magnetic field

Microwave detectors based on the spin-transfer torque diode effect are among the key emerging spintronic devices. By utilizing the spin of electrons in addition to charge, they have the potential to overcome the theoretical performance limits of their semiconductor (Schottky) counterparts, which cannot operate at low input power. Here, we demonstrate nanoscale microwave detectors exhibiting record-high detection sensitivity of 75400 mV mW$^{-1}$ at room temperature, without any external bias fields, for input microwave power down to 10 nW. This sensitivity is 20x and 6x larger than state-of-the-art Schottky diode detectors (3800 mV mW$^{-1}$) and existing spintronic diodes with >1000 Oe magnetic bias (12000 mV mW$^{-1}$), respectively. Micromagnetic simulations supported by microwave emission measurements reveal the essential role of the injection locking to achieve this sensitivity performance. The results enable dramatic improvements in the design of low input power microwave detectors, with wide-ranging applications in telecommunications, radars, and smart networks.

cond-mat.mes-hall↗

arXiv2013

Ultralow-current-density and bias-field-free spin-transfer nano-oscillator

The spin-transfer nano-oscillator (STNO) offers the possibility of using the transfer of spin angular momentum via spin-polarized currents to generate microwave signals. However, at present STNO microwave emission mainly relies on both large drive currents and external magnetic fields. These issues hinder the implementation of STNOs for practical applications in terms of power dissipation and size. Here, we report microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer, where microwave emission with large output power, excited at ultralow current densities, and in the absence of any bias magnetic fields is observed. The measured critical current density is over one order of magnitude smaller than previously reported. These results suggest the possibility of improved integration of STNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.

cond-mat.mes-hall↗