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Barbara Lehner

Publications and source records attributed to Barbara Lehner.

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A complete fs-laser-ablation route to miniaturized single-crystal PMN-PT piezoelectric actuators

This article presents a novel fabrication route for miniaturized piezoelectric actuators that relies exclusively on processes based on femtosecond (fs) laser ablation. Previous work has already demonstrated that fs-lasers are uniquely suited for the fabrication of piezoelectric actuators based on PMN-PT, which are required for multiaxial strain-tuning of quantum dots (QDs) to enable, e.g. the generation of highly entangled photon pairs. Building on these foundations, the present work advances actuator performance and capabilities by introducing a local thinning strategy. This approach allows the realization of smaller devices, which in turn enables lower operating voltages, while simultaneously offering the possibility of integrating multiple quantum light sources on a single chip. The article provides a detailed description of the full fabrication chain, entirely based on fs-laser processing steps, from substrate thinning to metal layer structuring and final device definition. A particular focus is placed on the final cutting process, where the implementation of a third-harmonic ultraviolet (UV) fs-laser wavelength significantly improves edge quality and shape definition compared to the second harmonic (SH) wavelength used in previous work. The device fabricated through the combination of local thinning and UV-based cutting promises not only to enhance the efficiency of strain transfer but also to ensure the mechanical stability required for practical applications. These results establish fs-laser-based fabrication as a versatile and scalable method for next-generation piezoelectric actuators, paving the way for advanced strain-engineering approaches in semiconductor quantum optics and integrated quantum photonics.

physics.app-ph

Surface passivation and oxide encapsulation to improve optical properties of a single GaAs quantum dot close to the surface

Epitaxial GaAs quantum dots grown by droplet etching have recently shown excellent properties as sources of single photons as well as entangled photon pairs. Integration in some nanophotonic structures requires surface-to-dot distances of less than 100 nm. This demands a surface passivation scheme, which could be useful to lower the density of surface states. To address this issue, sulphur passivation with dielectric overlayer as an encapsulation is used for surface to QD distances of 40 nm, which results in the partial recovery of emission linewidths to bulk values as well as in the increase of the photoluminescence intensity.

physics.app-ph

GaAs quantum dots grown by droplet etching epitaxy as quantum light sources

This paper presents an overview and perspectives on the epitaxial growth and optical properties of GaAs quantum dots obtained with the droplet etching method as high-quality sources of quantum light. We illustrate the recent achievements regarding the generation of single photons and polarization entangled photon pairs and the use of these sources in applications of central importance in quantum communication, such as entanglement swapping and quantum key distribution.

quant-ph

Quantum cryptography with highly entangled photons from semiconductor quantum dots

State-of-the-art quantum key distribution systems are based on the BB84 protocol and single photons generated by lasers. These implementations suffer from range limitations and security loopholes, which require expensive adaptation. The use of polarization entangled photon pairs substantially alleviates the security threads while allowing for basically arbitrary transmission distances when embedded in quantum repeater schemes. Semiconductor quantum dots are capable of emitting highly entangled photon pairs with ultra-low multi-pair emission probability even at maximum brightness. Here we report on the first implementation of the BBM92 protocol using a quantum dot source with an entanglement fidelity as high as 0.97(1). For a proof of principle, the key generation is performed between two buildings, connected by 350 metre long fiber, resulting in an average key rate of 135 bits/s and a qubit error rate of 0.019 over a time span of 13 hours, without resorting to time- or frequency-filtering techniques. Our work demonstrates the viability of quantum dots as light sources for entanglement-based quantum key distribution and quantum networks. By embedding them in state-of-the-art photonic structures, key generation rates in the Gbit/s range are at reach.

quant-ph