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Bartomeu Monserrat

Publications and source records attributed to Bartomeu Monserrat.

At least 73 records · Page 4Linked to original sources

Sub-picosecond photo-induced displacive phase transition in two-dimensional MoTe$_2$

Photo-induced phase transitions (PIPTs) provide an ultrafast, energy-efficient way for precisely manipulating the topological properties of transition-metal ditellurides, and can be used to stabilize a topological phase in an otherwise semiconducting material. Using first-principles calculations, we demonstrate that the PIPT in monolayer MoTe$_2$ from the semiconducting 2H phase to the topological 1T$'$ phase can be triggered purely by electronic excitations that soften multiple lattice vibrational modes. These softenings, driven by a Peierls-like mechanism within the conduction bands, lead to structural symmetry breaking within sub-picosecond timescales, which is shorter than the timescale of a thermally driven phase transition. The transition is predicted to be triggered by photons with energies over $1.96$\,eV, with an associated excited carrier density of $3.4\times10^{14}$\,cm$^{-2}$, which enables a controllable phase transformation by varying the laser wavelength. Our results provide insight into the underlying physics of the phase transition in 2D transition-metal ditellurides, and show an ultrafast phase transition mechanism for manipulation of the topological properties of 2D systems.

cond-mat.mtrl-sci↗

Boron phosphide as a \emph{p}-type transparent conductor: optical absorption and transport through electron-phonon coupling

Boron phosphide has recently been identified as a potential high hole mobility transparent conducting material. This promise arises from its low hole effective masses. However, BP has a relatively small 2 eV indirect band gap which will affect its transparency. In this work, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a \emph{p}-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm$^2$/Vs) at room temperature. This exceptional mobility comes from a combination of low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest this could be a general advantage of non-oxides for \emph{p}-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and shows that it exceeds by one order of magnitude that of established \emph{p}-type transparent conductors, confirming the potential of this material.

cond-mat.mtrl-sci↗

Unraveling the topology of ZrTe$_5$ by changing temperature

We study the effects of temperature on the topological nature of ZrTe$_5$, which sits near the phase boundary between strong and weak topological insulating orders. Using first-principles calculations, we show that the band gap and the topological indices of ZrTe$_5$ are extremely sensitive to thermal expansion, and that the electron-phonon interaction accounts for more than a third of the total temperature-dependent effects in ZrTe$_5$. We find that the temperature dependence of the band gap has an opposite sign in the strong and weak topological insulator phases. Based on this insight, we propose a robust and unambiguous method to determine the topological nature of any given sample of ZrTe$_5$: if the band gap decreases with temperature it is a strong topological insulator, and if it increases with temperature it is a weak topological insulator. An analogous strategy is expected to be generally applicable to other materials and to become particularly important in the vicinity of topological phase boundaries where other methods provide ambiguous results.

cond-mat.mtrl-sci↗

Topological semimetallic phase in PbO$_2$ promoted by temperature

Materials exhibiting topological order host exotic phenomena that could form the basis for novel developments in areas ranging from low-power electronics to quantum computers. The past decade has witnessed multiple experimental realizations and thousands of predictions of topological materials. However, it has been determined that increasing temperature destroys topological order, restricting many topological materials to very low temperatures and thus hampering practical applications. Here, we propose a material realization of temperature promoted topological order. We show that a semiconducting oxide that has been widely used in lead-acid batteries, $β$-PbO$_2$, hosts a topological semimetallic phase driven by both thermal expansion and electron-phonon coupling upon increasing temperature. We identify the interplay between the quasi-two-dimensional nature of the charge distribution of the valence band with the three-dimensional nature of the charge distribution of the conduction band as the microscopic mechanism driving this unconventional temperature dependence. Thus, we propose a general principle to search for and design novel topological materials whose topological order is stabilized by increasing temperature. This provides a clear roadmap for taking topological materials from the laboratory to technological devices.

cond-mat.mtrl-sci↗

Finite temperature optoelectronic properties of BAs from first principles

The high thermal conductivity of boron arsenide (BAs) makes it a promising material for optoelectronic applications in which thermal management is central. In this work, we study the finite temperature optoelectronic properties of BAs by considering both electron-phonon coupling and thermal expansion. The inclusion of electron-phonon coupling proves imperative to capture the temperature dependence of the optoelectronic properties of the material, while thermal expansion makes a negligible contribution due to the highly covalent bonding character of BAs. We predict that with increasing temperature the optical absorption onset is subject to a red shift, the absorption peaks become smoother, and the phonon-assisted absorption at energies below those of the optical gap has a coefficient that lies in the range $10^{-3}$ to $10^{-4}$ cm$^{-1}$. We also show that good agreement with the measured indirect band gap of BAs is only obtained if exact exchange, electron-phonon coupling, and spin-orbit coupling effects are all included in the calculations.

cond-mat.mtrl-sci↗

Nuclear magnetic resonance spectroscopy as a dynamical structural probe of high pressure hydrogen

An unambiguous crystallographic structure solution for the observed phases II-VI of high pressure hydrogen does not exist due to the failure of standard structural probes at extreme pressure. In this work we propose that nuclear magnetic resonance spectroscopy provides a complementary structural probe for high pressure hydrogen. We show that the best structural models available for phases II, III, and IV of high pressure hydrogen exhibit markedly distinct nuclear magnetic resonance spectra which could therefore be used to discriminate amongst them. As an example, we demonstrate how nuclear magnetic resonance spectroscopy could be used to establish whether phase III exhibits polymorphism. Our calculations also reveal a strong renormalisation of the nuclear magnetic resonance response in hydrogen arising from quantum fluctuations, as well as a strong isotope effect. As the experimental techniques develop, nuclear magnetic resonance spectroscopy can be expected to become a useful complementary structural probe in high pressure experiments.

cond-mat.mtrl-sci↗

Defect identification based on first-principles calculations for deep level transient spectroscopy

Deep level transient spectroscopy (DLTS) is used extensively to study defects in semiconductors. We demonstrate that great care should be exercised in interpreting activation energies extracted from DLTS as ionization energies. We show how first-principles calculations of thermodynamic transition levels, temperature effects of ionization energies, and nonradiative capture coefficients can be used to accurately determine actual activation energies that can be directly compared with DLTS. Our analysis is illustrated with hybrid functional calculations for two important defects in GaN that have similar thermodynamic transition levels, and shows that the activation energy extracted from DLTS includes a capture barrier that is temperature dependent, unique to each defect, and in some cases large in comparison to the ionization energy. By calculating quantities that can be directly compared with experiment, first-principles calculations thus offer powerful leverage in identifying the microscopic origin of defects detected in DLTS.

cond-mat.mtrl-sci↗

An Ab Initio Investigation on the Electronic Structure, Defect Energetics, and Magnesium Kinetics in Mg$_3$Bi$_2$

We present a comprehensive ab initio investigation on Mg$_3$Bi$_2$, a promising Mg-ion battery anode material with high rate capacity. Through combined DFT (PBE, HSE06) and $G_0W_0$ electronic structure calculations, we find that Mg$_3$Bi$_2$ is likely to be a small band gap semiconductor. DFT-based defect formation energies indicate that Mg vacancies are likely to form in this material, with relativistic spin-orbit coupling significantly lowering the defect formation energies. We show that a transition state searching methodology based on the hybrid eigenvector-following approach can be used effectively to search for the transition states in cases where full spin-orbit coupling is included. Mg migration barriers found through this hybrid eigenvector-following approach indicate that spin-orbit coupling also lowers the migration barrier, decreasing it to a value of 0.34 eV with spin-orbit coupling. Finally, recent experimental results on Mg diffusion are compared to the DFT results and show good agreement. This work demonstrates that vacancy defects and the inclusion of relativistic spin-orbit coupling in the calculations have a profound effect in Mg diffusion in this material. It also sheds light on the importance of relativistic spin-orbit coupling in studying similar battery systems where heavy elements play a crucial role.

cond-mat.mtrl-sci↗

Structure and metallicity of phase V of hydrogen

A new phase V of hydrogen was recently claimed in experiments above 325 GPa and 300 K. Due to the extremely small sample size at such record pressures the measurements were limited to Raman spectroscopy. The experimental data on increase of pressure shows decreasing Raman activity and darkening of the sample, which suggests band-gap closure and impending molecular dissociation, but no definite conclusions could be reached. Furthermore, the available data is insufficient to determine the structure of phase V, which remains unknown. Introducing saddle-point $ab$ $initio$ random structure searching (sp-AIRSS), we find several new structural candidates of hydrogen which could describe the observed properties of phase V. We investigate hydrogen metallisation in the proposed candidate structures, and demonstrate that smaller band gaps are associated with longer bond lengths. We conclude that phase V is a stepping stone towards metallisation.

cond-mat.mtrl-sci↗

Helium-iron compounds at terapascal pressures

We investigate the binary phase diagram of helium and iron using first-principles calculations. We find that helium, which is a noble gas and inert at ambient conditions, forms stable crystalline compounds with iron at terapascal pressures. A FeHe compound becomes stable above 4 TPa, and a FeHe$_2$ compound above 12 TPa. Melting is investigated using molecular dynamics simulations, and a superionic phase with sublattice melting of the helium atoms is predicted. We discuss the implications of our predicted helium-iron phase diagram for interiors of giant (exo)planets and white dwarf stars.

cond-mat.mtrl-sci↗

Role of electron-phonon coupling and thermal expansion on band gaps, carrier mobility, and interfacial offsets in kesterite thin-film solar cells

The efficiencies of solar cells based on kesterite Cu$_2$ZnSnS$_4$ (CZTS) and Cu$_2$ZnSnSe$_4$ (CZTSe) are limited by a low open-circuit voltage due to high rates of non-radiative electron-hole recombination. To probe the origin of this bottleneck, we calculate the band offset of CZTS(Se) with CdS, confirming a weak spike of 0.1 eV for CZTS/wurtzite-CdS and a strong spike of 0.4 eV for CZTSe/wurtzite-CdS. We also consider the effects of temperature on the band alignment, finding that increasing temperature significantly enhances the spike-type offset. We further resolve an outstanding discrepancy between measured and calculated phonon frequencies for the kesterites, and use these to estimate the upper limit of electron and hole mobilities based on optic phonon Fröhlich scattering, which uncovers an intrinsic asymmetry with faster (minority carrier) electron mobility.

cond-mat.mtrl-sci↗

Phonon-assisted spin splitting in centrosymmetric crystals

For static crystals it is well known that electronic states are doubly degenerate in their spin degree of freedom in the presence of time reversal and inversion symmetries. This degeneracy can only be lifted by either (i) breaking time reversal symmetry, for example in a ferromagnet, or (ii) breaking inversion symmetry and having spin orbit coupling, for example in the Rashba effect. We propose that spin degeneracy can be lifted in time reversal and inversion symmetric crystals with a combination of lattice vibrations and spin-orbit coupling. We demonstrate this effect in the cubic perovskite CsPbCl$_3$ by performing first principles calculations of the finite temperature band structure, which, in accordance with our prediction, undergoes spin splitting. We also suggest optical and photoemission experiments to examine our predictions. This new understanding dramatically expands the range of materials that can exhibit spin splitting, with potential applications in a variety of technologies such as spintronics and photovoltaics.

cond-mat.mtrl-sci↗

Stochastic sampling of quadrature grids for the evaluation of vibrational expectation values

The thermal lines method for the evaluation of vibrational expectation values of electronic observables [B. Monserrat, Phys. Rev. B 93, 014302 (2016)] was recently proposed as a physically motivated approximation offering balance between the accuracy of direct Monte Carlo integration and the low computational cost of using local quadratic approximations. In this paper we reformulate thermal lines as a stochastic implementation of quadrature grid integration, analyze the analytical form of its bias, and extend the method to multiple point quadrature grids applicable to any factorizable harmonic or anharmonic nuclear wave function. The bias incurred by thermal lines is found to depend on the local form of the expectation value, and we demonstrate that the use of finer quadrature grids along selected modes can eliminate this bias, while still offering a ~30% lower computational cost than direct Monte Carlo integration in our tests.

cond-mat.mtrl-sci↗

Phonon-assisted optical absorption in BaSnO$_3$ from first principles

The perovskite BaSnO$_3$ provides a promising platform for the realization of an earth abundant $n$-type transparent conductor. Its optical properties are dominated by a dispersive conduction band of Sn $5s$ states, and by a flatter valence band of O $2p$ states, with an overall indirect gap of about $2.9$ eV. Using first-principles methods, we study the optical properties of BaSnO$_3$ and show that both electron-phonon interactions and exact exchange, included using a hybrid functional, are necessary to obtain a qualitatively correct description of optical absorption in this material. In particular, the electron-phonon interaction drives phonon-assisted optical absorption across the minimum indirect gap and therefore determines the absorption onset, and it also leads to the temperature dependence of the absorption spectrum. Electronic correlations beyond semilocal density functional theory are key to detemine the dynamical stability of the cubic perovskite structure, as well as the correct energies of the conduction bands that dominate absorption. Our work demonstrates that phonon-mediated absorption processes should be included in the design of novel transparent conductor materials.

cond-mat.mtrl-sci↗

Temperature dependence of the bulk Rashba splitting in the bismuth tellurohalides

We study the temperature dependence of the Rashba-split bands in the bismuth tellurohalides BiTe$X$ $(X=$ I, Br, Cl) from first principles. We find that increasing temperature reduces the Rashba splitting, with the largest effect observed in BiTeI with a reduction of the Rashba parameter of $40$% when temperature increases from $0$ K to $300$ K. These results highlight the inadequacy of previous interpretations of the observed Rashba splitting in terms of static-lattice calculations alone. Notably, we find the opposite trend, a strengthening of the Rashba splitting with rising temperature, in the pressure-stabilized topological-insulator phase of BiTeI. We propose that the opposite trends with temperature on either side of the topological phase transition could be an experimental signature for identifying it. The predicted temperature dependence is consistent with optical conductivity measurements, and should also be observable using photoemission spectroscopy, which could provide further insights into the nature of spin splitting and topology in the bismuth tellurohalides.

cond-mat.mtrl-sci↗

Antiferroelectric topological insulators in orthorhombic $A$MgBi compounds ($A=$ Li, Na, K)

We introduce antiferroelectric topological insulators as a new class of functional materials in which an electric field can be used to control topological order and induce topological phase transitions. Using first principles methods, we predict that several alkali-MgBi orthorhombic members of an $ABC$ family of compounds are antiferroelectric topological insulators. We also show that epitaxial strain and hydrostatic pressure can be used to tune the topological order and the band gap of these $ABC$ compounds. Antiferroelectric topological insulators could enable precise control of topology using electric fields, enhancing the applicability of topological materials in electronics and spintronics.

cond-mat.mtrl-sci↗

First-principles study of the dynamic Jahn-Teller distortion of the neutral vacancy in diamond

First-principles density functional theory methods are used to investigate the structure, energetics, and vibrational motions of the neutral vacancy defect in diamond. The measured optical absorption spectrum demonstrates that the tetrahedral $T_d$ point group symmetry of pristine diamond is maintained when a vacancy defect is present. This is shown to arise from the presence of a dynamic Jahn-Teller distortion that is stabilised by large vibrational anharmonicity. Our calculations further demonstrate that the dynamic Jahn-Teller-distorted structure of $T_d$ symmetry is lower in energy than the static Jahn-Teller distorted tetragonal $D_{2d}$ vacancy defect, in agreement with experimental observations. The tetrahedral vacancy structure becomes more stable with respect to the tetragonal structure by increasing temperature. The large anharmonicity arises mainly from quartic vibrations, and is associated with a saddle point of the Born-Oppenheimer surface and a minimum in the free energy. This study demonstrates that the behaviour of Jahn-Teller distortions of point defects can be calculated accurately using anharmonic vibrational methods. Our work will open the way for first-principles treatments of dynamic Jahn-Teller systems in condensed matter.

cond-mat.mes-hall↗

Temperature Dependence of the Energy Levels of Methylammonium Lead Iodide Perovskite from First Principles

Environmental effects and intrinsic energy-loss processes lead to fluctuations in the operational temperature of solar cells, which can profoundly influence their power conversion efficiency. Here we determine from first principles the effects of temperature on the band gap and band edges of the hybrid pervoskite CH$_3$NH$_3$PbI$_3$ by accounting for electron-phonon coupling and thermal expansion. From $290$ to $380$ K, the computed band gap change of $40$ meV coincides with the experimental change of $30$-$40$ meV. The calculation of electron-phonon coupling in CH$_3$NH$_3$PbI$_3$ is particularly intricate, as the commonly used Allen-Heine-Cardona theory overestimates the band gap change with temperature, and excellent agreement with experiment is only obtained when including high-order terms in the electron-phonon interaction. We also find that spin-orbit coupling enhances the electron-phonon coupling strength, but that the inclusion of nonlocal correlations using hybrid functionals has little effect. We reach similar conclusions in the metal-halide perovskite CsPbI$_3$. Our results unambiguously confirm for the first time the importance of high-order terms in the electron-phonon coupling by direct comparison with experiment.

cond-mat.mtrl-sci↗