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Bartos Chmielak

Publications and source records attributed to Bartos Chmielak.

4 recordsLinked to original sources

Integrated, ultrafast all-optical polariton transistors with sub-wavelength grating microcavities

All-optical logic has the potential to overcome the operation speed barrier that has persisted in electronic circuits for two decades. However, the development of scalable architectures has been prevented so far by the lack of materials with sufficiently strong nonlinear interactions needed to realize compact and efficient ultrafast all-optical switches with optical gain. Microcavities with embedded organic material in the strong light-matter interaction regime have recently enabled all-optical transistors operating at room temperature with picosecond switching times. However, the vertical cavity geometry, which is predominantly used in polaritonics, is not suitable for complex circuits with on-chip coupled transistors. Here, by leveraging state-of-the-art silicon photonics technology, we have achieved exciton-polariton condensation at ambient conditions in fully integrated high-index contrast sub-wavelength grating microcavities filled with a pi-conjugated polymer as optically active material. We demonstrate ultrafast all-optical transistor action by coupling two resonators and utilizing seeded polariton condensation. With a device area as small as 2x2 um^2, we realize picosecond switching and amplification up to 60x, with extinction ratio up to 8:1. This compact ultrafast transistor device with in-plane integration is a key component for a scalable platform for all-optical logic circuits that could operate two orders of magnitude faster than electronic ones.

physics.optics

Room-temperature Distributed Feedback CsPbBr$_3$ Perovskite Laser Integrated on a Silicon Nitride Waveguide Platform

Silicon photonic integrated circuits (PICs) require cost-effective laser sources that can be monolithically integrated. The low cost and low-temperature solution processability of metal halide perovskites (MHPs) make them attractive alternatives to established III-V compound semiconductors for on-chip laser sources in PICs. Cesium lead bromide (CsPbBr$_3$) perovskites are emerging materials for green light-emitting diodes and lasers. To date, amplified spontaneous emission (ASE) at room temperature has been frequently achieved in CsPbBr$_3$ thin films, while reports on lasing are more limited. Here, we demonstrate a first-order grating distributed feedback (DFB) CsPbBr$_3$ thin-film laser operating at room temperature. Planar hot-pressed (PHP)-CsPbBr$_}$, with a low ASE threshold of 14.5 $μ$Jcm$^{-2}$ under 0.3 nanosecond (ns) pump pulses, was monolithically integrated into a silicon nitride (Si$_3$N$_4$) waveguide platform via a compatible top-down patterning process. The first-order grating DFB PHP-CsPbBr$_3$ thin-film laser operated at 540 nm in the green spectral region, where III-V lasers have limitations, and exhibited a lasing threshold of 0.755 mJcm$^{-2}$ at room temperature. This work marks a significant step toward utilizing MHPs for on-chip green lasers in PICs for commercial applications.

physics.app-ph

Monolithically Integrated Perovskite Semiconductor Lasers on Silicon Photonic Chips by Scalable Top-Down Fabrication

Metal-halide perovskites are promising lasing materials for realization of monolithically integrated laser sources, the key components of silicon photonic integrated circuits (PICs). Perovskites can be deposited from solution and require only low temperature processing leading to significant cost reduction and enabling new PIC architectures compared to state-of-the-art lasers realized through costly and inefficient hybrid integration of III-V semiconductors. Until now however, due to the chemical sensitivity of perovskites, no microfabrication process based on optical lithography and therefore on existing semiconductor manufacturing infrastructure has been established. Here, the first methylammonium lead iodide perovskite micro-disc lasers monolithically integrated into silicon nitride PICs by such a top-down process is presented. The lasers show a record low lasing threshold of 4.7 $μ$Jcm$^{-2}$ at room temperature for monolithically integrated lasers, which are CMOS compatible and can be integrated in the back-end-of-line (BEOL) processes.

physics.app-ph

Integrated perovskite lasers on silicon nitride waveguide platform by cost-effective high throughput fabrication

Metal-halide perovskites are a class of solution processed materials with remarkable optoelectronic properties such as high photoluminescence quantum yields and long carrier lifetimes, which makes them promising for a wide range of efficient photonic devices. In this work, we demonstrate the first successful integration of a perovskite laser onto a silicon nitride photonic chip. High throughput, low cost optical lithography is used followed by indirect structuring of the perovskite waveguide. We embed methylammonium lead tri-iodide (MAPbI3) in a pre-patterned race-track microresonator and couple the emitted light to an integrated photonic waveguide. We clearly observe the build-up of spectrally narrow lasing modes at room temperature upon a pump threshold fluence of $19.6 μJcm^{-2}$. Our results evidence the possibility of on-chip lasers based on metal-halide perovskites with industry relevance on a commercially available dielectric photonic platform, which is a step forward towards low-cost integrated photonic devices.

physics.optics