arXiv subjects

Beatriz Noheda

Publications and source records attributed to Beatriz Noheda.

47 records · Page 3Linked to original sources

arXiv2019

Periodicity doubling cascades: direct observation in ferroelastic materials

Very sensitive responses to external forces are found near phase transitions. However, phase transition dynamics and pre-equilibrium phenomena are difficult to detect and control. We have directly observed that the equilibrium domain structure following a phase transition in BaTiO3, a ferroelectric and ferroelastic material, is attained by halving of the domain periodicity, sequentially and multiple times. The process is reversible, displaying periodicity doubling as temperature is increased. This observation is backed theoretically and can explain the fingerprints of domain period multiplicity observed in other systems, strongly suggesting this as a general model for pattern formation during phase transitions in ferroelastic materials.

cond-mat.mtrl-sci↗

arXiv2018

A rhombohedral ferroelectric phase in epitaxially-strained Hf0.5Zr0.5O2 thin films

After decades of searching for robust nanoscale ferroelectricity that could enable integration into the next generation memory and logic devices, hafnia-based thin films have appeared as the ultimate candidate because their ferroelectric (FE) polarization becomes more robust as the size is reduced. This exposes a new kind of ferroelectricity, whose mechanism still needs to be understood. Towards this end, thin films with increased crystal quality are needed. We report the epitaxial growth of Hf0.5Zr0.5O2 (HZO) thin films on (001)-oriented La0.7Sr0.3MnO3/SrTiO3 (STO) substrates. The films, which are under epitaxial compressive strain and are predominantly (111)-oriented, display large FE polarization values up to 34 μC/cm2 and do not need wake-up cycling. Structural characterization reveals a rhombohedral phase, different from the commonly reported polar orthorhombic phase. This unexpected finding allows us to propose a compelling model for the formation of the FE phase. In addition, these results point towards nanoparticles of simple oxides as a vastly unexplored class of nanoscale ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2015

Strain-Induced Magnetic Anisotropy in Epitaxial Thin Films of the Spinel CoCr$_2$O$_4$

We show that the magnetic anisotropy in spinel-structure CoCr$_2$O$_4$ thin films exhibits a strain dependence in which compressive strain induces an out-of-plane magnetic easy axis and tensile strain an in-plane easy axis, exactly opposite to the behavior reported for the related compound CoFe$_2$O$_4$. We use density functional theory calculations within the LSDA+U approximation to reproduce and explain the observed behavior. Using second-order perturbation theory, we analyse the anisotropy tensor of the Co$^{2+}$ ions in both octahedral and tetrahedral coordination, allowing us to extend our results to spinels with general arrangements of Co$^{2+}$ ions.

cond-mat.mtrl-sci↗

arXiv2015

Spin-Hall magnetoresistance and spin Seebeck effect in spin-spiral and paramagnetic phases of multiferroic CoCr2O4 films

We report on the spin-Hall magnetoresistance (SMR) and spin Seebeck effect (SSE) in multiferroic CoCr2O4 (CCO) spinel thin films with Pt contacts. We observe a large enhancement of both signals below the spin-spiral (Ts = 28 K) and the spin lock-in transitions (T_{lock_in} = 14 K). The SMR and SSE response in the spin lock-in phase are one order of magnitude larger than those observed at the ferrimagnetic transition temperature (Tc = 94 K), which indicates that the interaction between spins at the Pt|CCO interface is more efficient in the non-collinear magnetic state below Ts and T_{lock-in}. At T > Tc, magnetic field-induced SMR and SSE signals are observed, which can be explained by a high interface susceptibility. Our results show that the spin transport at the Pt|CCO interface is sensitive to the magnetic phases but cannot be explained solely by the bulk magnetization.

cond-mat.mtrl-sci↗

arXiv2014

Domain wall magnetism in thin films of orthorhombic manganites

Thin films of orthorhombic TbMnO3, as well as other orthorhombic manganites, epitaxially grown on cubic SrTiO3 substrates display an induced magnetic moment that is absent in the bulk (antiferromagnetic) counterpart. Here we show that there is a clear correlation between the domain microstructure and the induced magnetic moment in TbMnO3 films on SrTiO3. In addition, the distinct dependence of the magnetization with the film thickness is not consistent with domain magnetism and indicates that the domain walls, rather than the domains, are the origin of the net magnetic moment. Since the orientation of the domain walls can be designed by the film-substrate relationship and its density can be tuned with the film thickness, these results represent a significant step forward towards the design of devices based on domain wall functionality.

cond-mat.mtrl-sci↗

arXiv2012

Resistive switching in ferroelectric BiFeO3 by 1.7 eV change of the Schottky barrier height

Using metal-ferroelectric junctions as switchable diodes was proposed several decades ago. This was shown to actually work in PbZr(1-x)TixO3 (PZT) by Blom et al. [P.W. M. Blom et al., Phys. Rev. Lett. 73, 2107 (1994)], who reported switching in the rectification direction and changes of the current of about 2 orders of magnitude upon switching the polarization direction of the ferroelectric layer. This form of resistive switching enables the read out of a ferroelectric memory state at higher speed compared to the capacitive design, without destroying the information in each reading cycle. Recently, Jiang and coworkers have shown that these Schottky barrier effects are enormous in BiFeO3, giving thousand times more switched charge than found by in PZT [A.Q. Jiang. et al., Adv. Mat. 23, 1277 (2011)]. Here, by performing local conductivity measurements, we attribute this to a large change of the Schottky barrier height between the as-grown, down-polarized domains and the up-polarized domains. These measurements allow to estimate the relative effect of polarization charges and screening charges on the conduction through the ferroelectric.

cond-mat.mtrl-sci↗

arXiv2010

Fine tuning epitaxial strain in ferroelectrics: PbxSr(1-x)TiO3 on DyScO3

Epitaxial strain can be used to modify the properties of ferroelectric thin films. From the experimental viewpoint, the challenge is to fine-tune the magnitude of the strain. We illustrate how, by using a suitable combination of composition and substrate, the magnitude of the epitaxial strain can be controlled in a continuous manner. The phase diagram of PbxSr1-xTiO3 films grown epitaxially on (110)-DyScO3 is calculated using a Devonshire-Landau approach. A boundary between in-plane and out-of-plane oriented ferroelectric phases is predicted to take place at $x \approx$ 0.8. A series of PbxSr1-xTiO3 films grown by MBE show good agreement with the proposed phase diagram

cond-mat.mtrl-sci↗

arXiv2007

Thin Lead Titanate films grown by Molecular Beam Epitaxy

The growth of atomically-flat thin films of ferroelectric PbTiO3 on SrTiO3 substrates, using molecular beam epitaxy, is reported. The main issue in the growth of these materials is the high volatility of lead. This can be largely overcome by using PbO, instead of Pb, as a source and by using atomic oxygen during growth. The continuous decrease of the out-of-plane lattice parameter with increasing temperature in the investigated range, indicates that PbTiO3 is still ferroelectric at the growth temperature (Tg= 600oC), which agrees with the theoretical prediction of TC= 765oC (compared to TCbulk= 490oC) for the present mismatch strain values.

cond-mat.mtrl-sci↗

arXiv2001

Symmetry of high-piezoelectric Pb-based complex perovskites at the morphotropic phase boundary I. Neutron diffraction study on Pb(Zn1/3Nb2/3)O3 -9%PbTiO3

The symmetry was examined using neutron diffraction method on Pb(Zn1/3Nb2/3)O3 -9%PbTiO3 (PZN/9PT) which has a composition at the morphotropic phase boundary (MPB) between Pb(Zn1/3Nb2/3)O3 and PbTiO3. The results were compared with those of other specimens with same composition but with different prehistory. The equilibrium state of all examined specimens is not the mixture of rhombohedral and tetragonal phases of the end members but exists in a new polarization rotation line Mc# (orthorhombic-monoclinic line). Among examined specimens, one exhibited tetragonal symmetry at room temperature but recovered monoclinic phase after a cooling and heating cycle.

cond-mat.mtrl-sci↗

arXiv2001

Symmetry of high-piezoelectric Pb-based complex perovskites at the morphotropic phase boundary II. Theoretical treatment

The structural characteristics of the perovskite- based ferroelectric Pb(Zn1/3Nb2/3)O3-9%PbTiO3 at the morphotropic phase boundary (MPB) region (x≃0.09) have been analyzed. The analysis is based on the symmetry adapted free energy functions under the assumption that the total polarization and the unit cell volume are conserved during the transformations between various morphotropic phases. Overall features of the relationships between the observed lattice constants at various conditions have been consistently explained. The origin of the anomalous physical properties at MPB is discussed.

cond-mat.mtrl-sci↗

arXiv2001

Neutron Diffraction Study of the Irreversible R-MA-MC Phase Transition in Single Crystal Pb[(Zn1/3Nb2/3)1-xTix]O3

Single crystals of the relaxor PZN-xPT display an enormously strong piezoelectric character. Recent x-ray scattering studies have revealed novel electric-field induced phase transitions in PZN-8%PT. As-grown crystals exhibit a rhombohedral structure that, under application of an electric field oriented along [001], transforms into a monoclinic (MA) phase, and then irreversibly to another monoclinic (MC) phase with increasing field strength. Since the latter phase change is very unusual, its transition sequence has been investigated by using triple-axis neutron scattering techniques so that the ``skin effect'' observed by x-ray scattering can be avoided, and the entire crystal bulk is probed. Contour maps of the elastic scattering have been mapped out in each phase in the (HOL) zone with high q-resolution. Increasing the field strength within the MC phase induces a sharp c-axis jump around 15 kV/cm. This jump was observed easily with x-rays in previous studies, but it was not observed in 5 different crystals examined with neutrons. A subsequent high-energy x-ray study of the same crystals showed that the c-axis jump is distributed within the crystal volume, thereby washing out the jump. The observed R-MA-MC transformational path is in perfect accord with very recent first principles calculations by Bellaiche, Garcia, and Vanderbilt in the PZT system.

cond-mat.str-el↗