SearcharxivSearch

arXiv subjects

Ben P. Carwithen

Publications and source records attributed to Ben P. Carwithen.

4 recordsLinked to original sources

Visible Imaging of Incoherent 1200-nm Light via Triplet--Triplet Annihilation Upconversion

Upconversion of low-energy photons to higher-energy photons provides an opportunity to surpass traditional limitations in fields such as 3D printing, photovoltaics, and photocatalysis. Triplet--triplet annihilation upconversion (TTA-UC) is particularly appealing for such applications as it can efficiently upconvert low-intensity, incoherent light. However, previously demonstrated thin-film TTA systems are simultaneously constrained by modest efficiencies and limited reach into the near infrared (NIR). Here, we design a single-layer thin-film bulk heterojunction that integrates PbS quantum dots (QDs) as tunable NIR absorbers within an organic semiconductor matrix of TES-ADT, achieving large anti-Stokes shifts up to 500 nm and high internal quantum efficiencies across the NIR-I and NIR-II windows (800-1200 nm). Through the incorporation of 5-tetracene carboxylic acid ligands on the PbS QD surface, the yield of sensitized triplets was boosted, as confirmed by transient absorption and time-resolved photoluminescence measurements. The resulting films demonstrated a 15-fold improvement in UC efficiency. Furthermore, we demonstrate visible imaging of incoherent 1200 nm light via thin-film TTA-UC at incident intensities at the imaging mask as low as 20 mWcm$^2$, marking a significant advance toward practical implementation of solid-state NIR-to-visible upconversion.

physics.optics

Matching Terahertz and Hall Mobilities as a Hallmark of Intrinsic Charge Transport in Metal-Halide Perovskites

Charge-carrier transport in soft-lattice materials, including metal-halide perovskites, is often perceived to be highly heterogeneous across different length scales, and influenced by both the intrinsic (dynamic) thermal electronic disorder and extrinsic (static) disorder due to crystal defects, impurities, grain boundaries, and surface states. As a consequence, the reported carrier mobilities obtained by different electrical and optical measurement techniques frequently disagree, raising a critical question: can a truly intrinsic charge transport regime (that is, a regime not dominated by static disorder) extend across macroscopic single crystals of these materials? Here, we demonstrate such a regime in an exemplary metal-halide perovskite system, epitaxial CsPbBr$_{3}$ single crystals, where the local mobility obtained via optical pump-terahertz probe (OPTP) spectroscopy quantitatively agrees with the macroscopic transport mobility across a broad range of experimental conditions. Using a dedicated device platform that enables concurrent Hall-effect and OPTP measurements on the same single-crystalline sample, we obtain consistent room-temperature mobilities of ~ 30 cm$^{2}$V$^{-1}$s$^{-1}$, among the highest reliably reported for CsPbBr$_{3}$. Both techniques reveal band-like temperature dependence of the hole mobility with similar power exponents, confirming that the same intrinsic transport mechanism governs the ultrafast/local and steady-state/macroscopic responses. These results show that defect-free charge transport is achievable in soft-lattice perovskites on millimetre length scales and establish a robust methodology for benchmarking intrinsic mobility in emerging semiconductors.

cond-mat.mtrl-sci

Interdot Lead Halide Excess Management in PbS Quantum Dot Solar Cells

Light-harvesting devices made from PbS quantum dot (QD) absorbers are one of the many promising technologies of third-generation photovoltaics. Their simple, solution-based fabrication together with a highly tunable and broad light absorption makes their application in newly developed solar cells particularly promising. In order to yield devices with reduced voltage and current losses, PbS QDs need to have strategically passivated surfaces, most commonly achieved through lead iodide and bromide passivation. The interdot spacing is then predominantly filled with residual amorphous lead halide species that remain from the ligand exchange, thus hindering efficient charge transport and reducing device stability. Herein, we demonstrate that a post-treatment by iodide based 2-phenylethlyammonium salts (X-PEAI) and intermediate 2D perovskite formation can be used to manage the lead halide excess in the PbS QD active layer. This treatment results in improved device performance and increased shelf-life stability, demonstrating the importance of interdot spacing management in PbS quantum dot photovoltaics.

physics.app-ph

Extending the Defect Tolerance of Halide Perovskite Nanocrystals to Hot Carrier Cooling Dynamics

Defect tolerance is a critical enabling factor for efficient lead-halide perovskite materials, but the current understanding is primarily on band-edge (cold) carriers, with significant debate over whether hot carriers (HCs) can also exhibit defect tolerance. Here, this important gap in the field is addressed by investigating how internationally-introduced traps affect HC relaxation in CsPbX3 nanocrystals (X = Br, I, or mixture). Using femtosecond interband and intraband spectroscopy, along with energy-dependent photoluminescence measurements and kinetic modelling, it is found that HCs are not universally defect tolerant in CsPbX3, but are strongly correlated to the defect tolerance of cold carriers, requiring shallow traps to be present (as in CsPbI3). It is found that HCs are directly captured by traps, instead of going through an intermediate cold carrier, and deeper traps cause faster HC cooling, reducing the effects of the hot phonon bottleneck and Auger reheating. This work provides important insights into how defects influence HCs, which will be important for designing materials for hot carrier solar cells, multiexciton generation, and optical gain media.

physics.app-ph