arXiv subjects

Benjamin A. Piot

Publications and source records attributed to Benjamin A. Piot.

15 recordsLinked to original sources

arXiv2026

Optical control of conductivity type and valley polarization via persistent photoconductivity in (Pb,Sn)Se quantum wells

The ability to tune the Fermi level of semiconductors is at the heart of modern electronics. Here, we demonstrate that persistent photoconductivity (PPC) enables tuning of carrier density, conductivity type, and, consequently, the valley polarization in (Pb,Sn)Se/(Pb,Eu)Se quantum wells. Illumination of these samples induces Fermi level shifts that convert the system from a threefold-degenerate $\bar{M}$-valley two-dimensional hole gas to a single $\barΓ$-valley-polarized electron gas with similar values of mobility. The optically induced state persists for more than $10^{3}$ minutes at cryogenic temperatures and enables stepwise optical gating without the need for device processing. These transitions are confirmed by the sign inversion of the Hall slope and the modification of quantum Hall plateau degeneracies measured in magnetic fields up to 35 T. Landau level $k\cdot p$ model calculations quantitatively reproduce the experimental data. Furthermore, studies of weak-field magnetoresistance demonstrate the significance of quantum localization phenomena at the transition between the weakly and strongly localized regimes in compensated narrow-gap semiconductors. Spectral studies allow us to identify the critical role of the barrier material and determine the photon energies that can reverse the PPC effect. The persistent light-induced upward shift of the Fermi level in the $p$-type quantum well is explained in terms of specific energy positions of donor and acceptor defect states in the studied system. Our results demonstrate that PPC is a powerful optical gating tool for the IV-VI quantum wells, a versatile platform for reconfigurable valleytronic architectures.

cond-mat.mes-hall↗

arXiv2026

Coherent canted ferrimagnetism and higher-order anisotropy in the nodal-line magnetic semiconductor Mn3Si2Te6

The interplay between magnetic order and electronic topology in van der Waals materials enables extreme responses to external stimuli. The nodal-line semiconductor Mn3Si2Te6 exemplifies this, exhibiting colossal angular magnetoresistance (CAMR) where resistivity changes by orders of magnitude upon rotating the magnetic field. While this phenomenon implies a profound coupling between spin orientation and charge transport, the microscopic magnetic potentials driving spin orientations remain elusive. Here, we combine thermodynamic torque magnetometry and electron spin resonance spectroscopy to reconstruct the magnetic anisotropy energy that controls magnetization rotation in Mn3Si2Te6. We show that low-temperature ground state is a coherent canted ferrimagnet stabilized by competing second- (K1) and fourth-order (K2) magnetic anisotropy. Crucially, torque requires a substantial symmetry-allowed sixth-order term (K3), which provides near-plane stiffness and sustains canting at high fields. Using the resulting anisotropy parameters, we compute the non-linear relation between field angle θ_H and magnetization angle θ_M and reparameterize CAMR in terms of θ_M, providing a concrete magnetic basis for how sharp angular transport features can emerge near the in-plane configuration.

cond-mat.str-el↗

arXiv2026

Paramagnetically driven superconducting re-entrance in Eu-doped infinite layer nickelates

The breakthrough discovery of superconductivity in infinite-layer nickelates, and subsequently in several superconducting nickelates with more complex layered structures, capped a search spanning more than two decades and opened an entirely new field of research. Significant efforts aim to increase the critical temperature, to determine the electronic structure of the system, the underlying pairing mechanism, and the similarities between this system and cuprates - Ni1+ in infinite-layer nickelates being isoelectronic to Cu2+ in high-Tc cuprates. Here, we explore the unique role of magnetic rare earth ions in superconducting Eu-doped NdNiO2. We show that the field-induced re-entrant superconductivity which we evidence in this compound is the result of a delicate balance between the competing effects of the Eu2+ and Nd3+ ions. Our analyses of the extraordinary Hall effect and modeling of the superconducting critical fields demonstrate that the influence of these ions on magneto-transport is only felt when they are polarized by a magnetic field.

cond-mat.supr-con↗

arXiv2025

Wide Electrical Tunability of the Valley Splitting in a Doubly gated Silicon-on-Insulator Quantum Well

The valley splitting of 2D electrons in doubly-gated silicon-on-insulator quantum wells is studied by low temperature transport measurements under magnetic fields. At the buried thermal-oxide SiO$_{2}$ interface, the valley splitting increases as a function of the electrostatic bias $δn = n_{B}-n_{F}$ (where $n_{B}$ and $n_{F}$ are electron densities contributed by back and front gates, respectively) and reaches values as high as $6.3$~meV, independent of the total carrier concentration of the channel. We show that $δn$ tunes the square of the wave function modulus at the interface and its penetration into the barrier, both of which are key quantities in a theory describing interface-induced valley splitting, and is therefore the natural experimental parameter to manipulate valleys in 2D silicon systems. At the front interface, made of a thin ``high-k'' dielectric, a smaller valley splitting is observed, adding further options to tune the valley splitting within a single device.

cond-mat.mes-hall↗

arXiv2025

Topological phase diagram and quantum magnetotransport effects in (Pb,Sn)Se quantum wells with magnetic barriers (Pb,Eu)Se

In this study, we report here on a successful growth by molecular beam epitaxy of high crystalline quality Pb$_{1-x}$Sn$_{x}$Se:Bi/Pb$_{1-y}$Eu$_{y}$Se QWs with $x = 0.25$ and $y = 0.1$, and on their magnetotransport characterization as a function of the QW thickness between 10 and 50 nm, temperatures down to 300 mK, perpendicular and tilted magnetic fields up to 36 T. The character of weak antilocalization magnetoresistance and universal conductance fluctuations points to a notably long phase coherence length. It is argued that a relatively large magnitude of the dielectric constant of IV-VI compounds suppresses the decoherence by electron-electron scattering. The observation of Shubnikov-de-Haas oscillations and the quantum Hall effect, together with multiband $k\cdot p$ modelling, have enabled us to assess valley degeneracies, the magnitude of strain, subbands effective masses, and the topological phase diagram as a function of the QW thickness. Our results demonstrate that further progress in controlling Sn content, carrier densities, and magnetism in Pb$_{1-x}$Sn$_{x}$Se/Pb$_{1-y}$Eu$_{y}$Se QWs will allow for the exploration of the topologically protected quantized edge transport even in the absence of an external magnetic field.

cond-mat.mes-hall↗

arXiv2024

Factors Enabling Delocalized Charge-Carriers in Pnictogen-Based Solar Absorbers: In-depth Investigation into CuSbSe2

Inorganic semiconductors based on heavy pnictogen cations (Sb3+ and Bi3+) have gained significant attention as potential nontoxic and stable alternatives to lead-halide perovskites for solar cell applications. A limitation of these novel materials, which is being increasingly commonly found, is carrier localization, which substantially reduces mobilities and diffusion lengths. Herein, the layered příbramite CuSbSe2 is investigated and discovered to have delocalized free carriers, as shown through optical pump terahertz probe spectroscopy and temperature-dependent mobility measurements. Using a combination of theory and experiment, it is found that the underlying factors are: 1) weak coupling to acoustic phonons due to low deformation potentials, as lattice distortions are primarily accommodated through rigid inter-layer movement rather than straining inter-atomic bonds, and 2) weak coupling to optical phonons due to the ionic contributions to the dielectric constant being low compared to electronic contributions. This work provides important insights into how pnictogen-based semiconductors avoiding carrier localization could be identified.

cond-mat.mtrl-sci↗

arXiv2022

Mixing of surface and bulk electronic states at a graphite-hexagonal boron nitride interface

Van der Waals assembly enables exquisite design of electronic states in two-dimensional (2D) materials, often by superimposing a long-wavelength periodic potential on a crystal lattice using moiré superlattices. Here we show that electronic states in three-dimensional (3D) crystals such as graphite can also be tuned by the superlattice potential arising at the interface with another crystal, namely, crystallographically aligned hexagonal boron nitride. Such alignment is found to result in a multitude of Lifshitz transitions and Brown-Zak oscillations for near-surface 2D states whereas, in high magnetic fields, fractal states of Hofstadter's butterfly extend deep into graphite's bulk. Our work shows a venue to control 3D spectra by using the approach of 2D twistronics.

cond-mat.mes-hall↗

arXiv2021

Observation of re-entrant correlated insulators and interaction driven Fermi surface reconstructions at one magnetic flux quantum per moiré unit cell in magic-angle twisted bilayer graphene

The discovery of flat bands with non-trivial band topology in magic angle twisted bi-layer graphene (MATBG) has provided a unique platform to study strongly correlated phe-nomena including superconductivity, correlated insulators, Chern insulators and magnetism. A fundamental feature of the MATBG, so far unexplored, is its high magnetic field Hof-stadter spectrum. Here we report on a detailed magneto-transport study of a MATBG de-vice in external magnetic fields of up to B = 31 T, corresponding to one magnetic flux quan-tum per moiré unit cell Φ0. At Φ0, we observe a re-entrant correlated insulator at a flat band filling factor of ν = +2, and interaction-driven Fermi surface reconstructions at other fillings, which are identified by new sets of Landau levels originating from these. These ex-perimental observations are supplemented by theoretical work that predicts a new set of 8 well-isolated flat bands at Φ0 , of comparable band width but with different topology than in zero field. Overall, our magneto-transport data reveals a qualitatively new Hofstadter spec-trum in MATBG, which arises due to the strong electronic correlations in the re-entrant flat bands.

cond-mat.str-el↗

arXiv2020

Multiple Flat Bands and Topological Hofstadter Butterfly in Twisted Bilayer Graphene Close to the Second Magic Angle

Moiré superlattices in two-dimensional (2D) van der Waals (vdW) heterostructures provide 20 an efficient way to engineer electron band properties. The recent discovery of exotic quantum phases and their interplay in twisted bilayer graphene (tBLG) has built this moiré system one of the most renowned condensed matter platforms (1-10). So far the studies of tBLG has been mostly focused on the lowest two flat moiré bands at the first magic angle θm1 ~ 1.1°, leaving high-order moiré bands and magic angles largely unexplored. Here we report 25 an observation of multiple well-isolated flat moiré bands in tBLG close to the second magic angle θm2 ~ 0.5°, which cannot be explained without considering electron-election interactions. With high magnetic field magneto-transport measurements, we further reveal a qualitatively new, energetically unbound Hofstadter butterfly spectrum in which continuously extended quantized Landau level gaps cross all trivial band-gaps. The 30 connected Hofstadter butterfly strongly evidences the topologically nontrivial textures of the multiple moiré bands. Overall, our work provides a new perspective for understanding the quantum phases in tBLG and the fractal Hofstadter spectra of multiple topological bands.

cond-mat.mes-hall↗

arXiv2020

Tunable van Hove Singularities and Correlated States in Twisted Trilayer Graphene

Understanding and tuning correlated states is of great interest and significance to modern condensed matter physics. The recent discovery of unconventional superconductivity and Mott-like insulating states in magic-angle twisted bilayer graphene (tBLG) presents a unique platform to study correlation phenomena, in which the Coulomb energy dominates over the quenched kinetic energy as a result of hybridized flat bands. Extending this approach to the case of twisted multilayer graphene would allow even higher control over the band structure because of the reduced symmetry of the system. Here, we study electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure). We observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions, including superconducting states. We provide basic theoretical interpretation of the observed electronic structure.

cond-mat.mes-hall↗

arXiv2019

Electronic phase separation in topological surface states of rhombohedral graphite

Of the two stable forms of graphite, hexagonal (HG) and rhombohedral (RG), the former is more common and has been studied extensively. RG is less stable, which so far precluded its detailed investigation, despite many theoretical predictions about the abundance of exotic interaction-induced physics. Advances in van der Waals heterostructure technology have now allowed us to make high-quality RG films up to 50 graphene layers thick and study their transport properties. We find that the bulk electronic states in such RG are gapped and, at low temperatures, electron transport is dominated by surface states. Because of topological protection, the surface states are robust and of high quality, allowing the observation of the quantum Hall effect, where RG exhibits phase transitions between gapless semimetallic phase and gapped quantum spin Hall phase with giant Berry curvature. An energy gap can also be opened in the surface states by breaking their inversion symmetry via applying a perpendicular electric field. Moreover, in RG films thinner than 4 nm, a gap is present even without an external electric field. This spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation, which we attribute to emergence of strongly-correlated electronic surface states.

cond-mat.mes-hall↗

arXiv2019

Helical quantum Hall phase in graphene on SrTiO$_3$

The ground state of charge neutral graphene under perpendicular magnetic field was predicted to be a quantum Hall topological insulator with a ferromagnetic order and spin-filtered, helical edge channels. In most experiments, however, an otherwise insulating state is observed and is accounted for by lattice-scale interactions that promote a broken-symmetry state with gapped bulk and edge excitations. We tuned the ground state of the graphene zeroth Landau level to the topological phase via a suitable screening of the Coulomb interaction with a SrTiO$_3$ high-$k$ dielectric substrate. We observed robust helical edge transport emerging at a magnetic field as low as 1 tesla and withstanding temperatures up to 110 kelvins over micron-long distances. This new and versatile graphene platform opens new avenues for spintronics and topological quantum computation.

cond-mat.mes-hall↗

arXiv2018

Flat Electronic Bands in Long Sequences of Rhombohedral-stacked Multilayer Graphene

The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion. In such a flat band, the role of electron-electron correlation is enhanced possibly resulting in high Tc superconductivity, charge density wave or magnetic orders. Clean experimental band structure measurements of ABC stacked specimens are missing because the samples are usually too small in size. Here, we directly image the band structure of large multilayer graphene flake containing approximately 14 consecutive ABC layers. Angle-resolved photoemission spectroscopy experiments reveal the flat electronic bands near the K point extends by 0.13 Å-1 at the Fermi level at liquid nitrogen temperature. First-principle calculations identify the electronic ground state as an antiferromagnetic state with a band gap of about 40 meV.

cond-mat.mtrl-sci↗

arXiv2018

Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS$_2$

Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall effects, Ising superconductivity. The reduced dimensionality and large effective masses further produce unconventional many-body interaction effects. Although recent hole transport measurements in WSe$_2$ indicate strong interactions in the valence bands, many-body interaction effects, particularly in the conduction bands, remain elusive to date. Here, for the first time, we perform transport measurements up to a magnetic field of $29$T to study the massive Dirac electron Landau levels (LL) in layer-polarized MoS$_2$ samples with mobilities of $22000$cm$^2$/(V$\cdot$s) at $1.5$K and densities of $\sim10^{12}$cm$^{-2}$. With decreasing the density, we observe LL crossing induced valley ferrimagnet-to-ferromagnet transitions, as a result of the interaction enhancement of the g-factor from $5.64$ to $21.82$. Near integer ratios of Zeeman-to-cyclotron energies, we discover LL anticrossings due to the formation of quantum Hall Ising ferromagnets, the valley polarizations of which appear to be reversible by tuning the density or an in-plane magnetic field. Our results provide compelling evidence for many-body interaction effects in the conduction bands of monolayer MoS$_2$ and establish a fertile ground for exploring strongly correlated phenomena of massive Dirac electrons.

cond-mat.mes-hall↗

arXiv2016

Spin Hall Magnetoresistance in a Canted Ferrimagnet

We study the spin Hall magnetoresistance effect in ferrimagnet/normal metal bilayers, comparing the response in collinear and canted magnetic phases. In the collinear magnetic phase, in which the sublattice magnetic moments are all aligned along the same axis, we observe the conventional spin Hall magnetoresistance. In contrast, in the canted phase, the magnetoresistance changes sign. Using atomistic spin model calculations of the magnetic configuration, we show that the electric transport for the different magnetic phases can be rationalized considering the individual sublattice moment orientations. This enables a magneto-transport based investigation of non-collinear magnetic textures.

cond-mat.mes-hall↗