arXiv subjects

Benjamin Lawrie

Publications and source records attributed to Benjamin Lawrie.

At least 19 recordsLinked to original sources

arXiv2026

Understanding multiscale disorder in superconducting nanowire single photon detectors

Superconducting nanowire single-photon detectors are central to applications across quantum information science. Yet, their performance is limited by the effects of disorder and electrodynamic inhomogeneities that are not well understood. By combining DC transport, dark-count measurements, and bias-dependent microwave transmission spectroscopy in the presence of controlled nanoscale disorder introduced through helium-ion irradiation, we distinguish local instability-driven processes from intrinsic superconducting depairing and kinetic inductance nonlinearities. This approach enables systematic tuning of kinetic inductance, depairing currents, microwave dissipation, and mode structure within a single device. Bias- and temperature-dependent resonance shifts quantify disorder-induced modifications of the superconducting density of states through the nonlinear kinetic inductance, while the emergence of multiple resonant modes reveals the formation of electrodynamically distinct superconducting regions. Comparing depairing under current, field, and temperature isolates the dominant microwave loss mechanisms, separating vortex, quasiparticle, and two-level-system contributions, thus providing a robust multifunctional foundation for disorder engineering of superconducting nanowire detectors and resonators.

quant-ph↗

arXiv2026

Fingerprinting superconductors by disentangling Andreev and quasiparticle currents across tunable tunnel junctions

Tunneling Andreev reflection (TAR) spectroscopy offers a powerful new approach to fingerprint superconducting pairing symmetry at the atomic scale. By leveraging the exponential sensitivity of excess tunneling decay rate to Andreev reflection, TAR robustly distinguishes between s-wave, d-wave, and more complex order parameters, overcoming limitations of traditional conductance-based techniques. Here, using atomistic superconducting transport simulations, we show that the additivity of excess decay rate enables clear separation of Andreev and quasiparticle currents. In particular, we reveal how their competition as well as higher-order scattering processes shape both the decay rate spectra and their dependence on the coupling strength. We show that this phenomenology stems from the fact that Andreev reflection dominates mid-gap conductance for s-wave superconductors, it is suppressed for the d-wave, and it coexists with quasiparticle tunneling in sign-changing symmetries if the expectation value for the superconducting gap remains finite. These distinct spectral fingerprints pave the way for atomically resolved identification of unconventional superconducting states.

cond-mat.supr-con↗

arXiv2026

Detecting half-quantum superconducting vortices by spin-qubit relaxometry

Half-quantum vortices in spin-triplet superconductors are predicted to harbor Majorana zero modes and may provide a viable avenue to topological quantum computation. Here, we introduce a novel approach for directly measuring the half-integer-quantized magnetic fluxes, $\Phi = h / (4e)$, carried by such half-quantum vortices via spin-qubit relaxometry. We consider a superconducting strip with a narrow pinch point at which vortices cross quasi-periodically below a spin qubit as a result of a bias current. We demonstrate that the relaxation rate of the spin qubit exhibits a pronounced peak if the vortex-crossing frequency matches the transition frequency of the spin qubit and conclude that the magnetic flux $\Phi$ of a single vortex can be obtained by dividing the corresponding voltage along the strip with the transition frequency. We discuss experimental constraints on implementing our proposed setup in spin-triplet candidate materials like UTe$_2$, UPt$_3$, and URhGe.

cond-mat.supr-con↗

arXiv2025

Ultranarrow Bright Single-Photon Emitters in Diamond with Strong Broadband Phonon Decoupling

Single-photon emitters are fundamental building blocks for quantum information processing, communication and sensing. However, unwanted interactions with bulk phonons in their host environment strongly limit their coherence and controllability. We report single color centers in nanodiamonds that are strongly and comprehensively decoupled from the bulk phononic environment. The color centers feature record-narrow linewidths down to 0.3 nm at room temperature and stable, bright emission, exceeding 10 Mcps in saturation. Notably, the bulk phonon sideband is almost entirely suppressed, revealing the presence of a single localized vibrational mode outside the diamond phonon band. Our observations and simulations point towards a unique mechanism for phonon decoupling in common wide-gap materials, based on a strongly radiative orbital transition coupled to a localized vibrational mode. The new color center enables qualitatively higher performance for applications in quantum networks and nanoscale sensing, and the exploration of new physical resources associated with vibrational states.

quant-ph↗

arXiv2025

Probing the Nanoscale Excitonic Landscape and Quantum Confinement of Excitons in Gated Monolayer Semiconductors

Engineering and probing excitonic properties at the nanoscale remains a central challenge in quantum photonics and optoelectronics. While exciton confinement via electrical control and strain engineering has been demonstrated in 2D semiconductors, substantial nanoscale heterogeneity limits the scalability of 2D quantum photonic device architectures. In this work, we use cathodoluminescence spectroscopy to probe the excitonic landscape of monolayer $WS_2$ under electrostatic gating. Exploiting the high spatial resolution of the converged electron beam, we resolve a homojunction arising between gated and ungated regions. Moreover, we reveal an exciton confinement channel arising from an unconventional doping mechanism driven by the interplay between the electron beam and the applied gate fields. These findings offer new insights into the optoelectronic behavior of monolayer semiconductors under the combined influence of electron-beam excitation and electrostatic gating. Our approach provides a pathway for exciton manipulation at the nanoscale and opens opportunities for controlling quantum-confined exciton transport in two-dimensional materials.

cond-mat.mes-hall↗

arXiv2025

Anticipating Decoherence for Enhancing Coherence in Quantum Systems

Large-scale quantum systems require optical coherence between distant quantum devices, necessitating spectral indistinguishability. Scalable solid-state platforms offer promising routes to this goal. However, environmental disorders, including dephasing, spectral diffusion, and spin-bath interactions, influence the emitters' spectra and deteriorate the coherence. Using statistical theory, we identify correlations in spectral diffusion from slowly varying environmental coupling, revealing predictable dynamics extendable to other disorders. Importantly, this could enable the development of an anticipatory framework for forecasting and decoherence engineering in remote quantum emitters. To validate this framework, we demonstrate that a machine learning model trained on limited data can accurately forecast unseen spectral behavior. Realization of such a model on distinct quantum emitters could reduce the spectral shift by factors $\approx$ 2.1 to 15.8, depending on emitter stability, compared to no prediction. This work presents, for the first time, the application of anticipatory systems and replica theory to quantum technology, along with the first experimental demonstration of internal prediction that generalizes across multiple quantum emitters. These results pave the way for real-time decoherence engineering in scalable quantum systems. Such capability could lead to enhanced optical coherence and multi-emitter synchronization, with broad implications for quantum communication, computation, imaging, and sensing.

quant-ph↗

arXiv2025

Programmable phase selection between altermagnetic and non-centrosymmetric polymorphs of MnTe on InP via molecular beam epitaxy

Phase selecting nearly degenerate crystalline polymorphs during epitaxial growth can be challenging yet is critical to targeting physical properties for specific applications. Here, we establish how phase selectivity of altermagnetic and non-centrosymmetric polymorphs of MnTe with high structural quality and phase purity can be programmed by subtle changes to the surface of lattice-matched InP substrates in molecular beam epitaxial (MBE) growth. Bulk altermagnetic MnTe is thermodynamically stable in the hexagonal NiAs-structure and is synthesized here on the (111)A surface (In-terminated) of InP, while the non-centrosymmetric, cubic ZnS-structure with wide band gap (> 3eV) is stabilized on the (111)B surface (P-terminated). Here we use electron microscopy, photoemission spectroscopy, and reflection high-energy electron diffraction, which together indicate that the phase selection is triggered at the interface and proceeds along the growing surface. First principles calculations suggest that interfacial termination and strain have a significant effect on the interfacial energy; stabilizing the NiAs polymorph on the In-terminated surface and the ZnS structure on the P-terminated surface. Selectively grown, high-quality films of MnTe polymorphs are key platforms that will enable our understanding of the novel properties of these materials, thereby facilitating their use in new applications ranging from spintronics to microelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Sub-Terahertz Spin Relaxation Dynamics of Boron-Vacancy Centers in Hexagonal Boron Nitride

Quantum sensors based on spin-defect relaxation have become powerful tools for detecting faint magnetic signals, yet their operation has remained largely confined to low magnetic fields and gigahertz frequencies. Extending such sensors into high-field ($> 0.3$ T) and sub-terahertz regimes would enable quantum metrology across a wide range of electromagnetic phenomena and scientific applications, but has proven challenging. Here, we demonstrate that negatively charged boron vacancies ($\mathrm{V_B^-}$) in two-dimensional hexagonal boron nitride can function as relaxation-based quantum sensors operating up to 0.2 terahertz. Their uniform spin-orientation and persistent spin-contrast at high fields enable direct measurement of intrinsic spin relaxation across previously unexplored temperature and frequency regimes. We also reveal a crossover in relaxation behavior \textemdash initially decreasing at low fields before rising at higher fields \textemdash consistent with the emergence of single-phonon-induced resonant noise that becomes significant at sub-terahertz frequencies. These results establish $\mathrm{V_B^-}$ centers as a versatile platform for quantum sensing in the sub-terahertz, high-field regime.

quant-ph↗

arXiv2025

Defect Engineering in Large-Scale CVD-Grown Hexagonal Boron Nitride: Formation, Spectroscopy, and Spin Relaxation Dynamics

Recently, numerous techniques have been reported for generating optically active defects in exfoliated hexagonal boron nitride (hBN), which hold transformative potential for quantum photonic devices. However, achieving on-demand generation of desirable defect types in scalable hBN films remains a significant challenge. Here, we demonstrate that formation of negative boron vacancy defects, VB-, in suspended, large-area CVD-grown hBN is strongly dependent on the type of bombarding particles (ions, neutrons, and electrons) and irradiation conditions. In contrast to suspended hBN, defect formation in substrate-supported hBN is more complex due to the uncontrollable generation of secondary particles from the substrate, and the outcome strongly depends on the thickness of the hBN. We identify different defect types by correlating spectroscopic and optically detected magnetic resonance features, distinguishing boron vacancies (formed by light ions and neutrons) from other optically active defects emitting at 650 nm assigned to anti-site nitrogen vacancy (NBVN) and reveal the presence of additional dark paramagnetic defects that influence spin-lattice relaxation time (T1) and zero-field splitting parameters, all of which strongly depend on the defect density. These results underscore the potential for precisely engineered defect formation in large-scale CVD-grown hBN, paving the way for the scalable fabrication of quantum photonic devices.

cond-mat.mtrl-sci↗

arXiv2024

Energy level structure of diamond silicon vacancy centers in an off-axis magnetic field

We report the development of an experimental approach that can characterize the energy level structure of an individual silicon vacancy (SiV) center in a magnetic field and extract the key parameters for the energy level structure. This approach builds upon a theoretical model that includes effects of the static strain, dynamic Jahn-Teller coupling, and magnetic field and introduces two coupling rates, one each for the ground and the excited states, to characterize the combined effects of strain and Jahn-Teller coupling. With the use of an analytical expression for the energy level structure of the SiV center under a transverse magnetic field, these two coupling rates can be directly derived from the measurement of the frequency separation between two spin-conserved transitions in a photoluminescence excitation spectrum and the measurement of the coherent population trapping resonance related to the SiV ground spin states. Additional experimental studies on the dependence of the energy level structure on the magnetic field amplitude and direction further verify the theoretical model and reveal contributions from unequal orbital magnetic coupling for the ground and excited states.

cond-mat.mes-hall↗

arXiv2024

Coherent population trapping and spin relaxation of a silicon vacancy center in diamond at mK temperatures

We report experimental studies of coherent population trapping and spin relaxation in a temperature range between 4 K and 100 mK in a silicon vacancy (SiV) center subject to a transverse magnetic field. Near and below 1 K, phonon-induced spin dephasing becomes negligible compared with that induced by the spin bath of naturally abundant 13C atoms. The temperature dependence of the spin dephasing rates agrees with the theoretical expectation that phonon-induced spin dephasing arises primarily from orbital relaxation induced by first order electron-phonon interactions. A nearly 100-fold increase in spin lifetime is observed when the temperature is lowered from 4 K to slightly below 1 K, indicating that two-phonon spin-flip transitions play an essential role in the spin relaxation of SiV ground states.

quant-ph↗

arXiv2023

Closed-Loop Electron-Beam-Induced Spectroscopy and Nanofabrication Around Individual Quantum Emitters

Color centers in diamond play a central role in the development of quantum photonic technologies, and their importance is only expected to grow in the near future. For many quantum applications, high collection efficiency from individual emitters is required, but the refractive index mismatch between diamond and air limits the optimal collection efficiency with conventional diamond device geometries. While different out-coupling methods with near-unity efficiency exist, many have yet to be realized due to current limitations in nanofabrication methods, especially for mechanically hard materials like diamond. Here, we leverage electron-beam-induced etching to modify Sn-implanted diamond quantum microchiplets containing integrated waveguides with width and thickness of 280 nm and 200 nm, respectively. This approach allows for simultaneous high-resolution imaging and modification of the host matrix with an open geometry and direct writing. When coupled with the cathodoluminescence signal generated from the electron-emitter interactions, we can monitor the enhancement of the quantum emitters in real-time with nanoscale spatial resolution. The operando measurement and manipulation of single photon emitters demonstrated here provides a new foundation for the control of emitter-cavity interactions in integrated quantum photonics.

physics.optics↗

arXiv2023

Nanoscale imaging of He-ion irradiation effects on amorphous TaO$_x$ toward electroforming-free neuromorphic functions

Resistive switching in thin films has been widely studied in a broad range of materials. Yet the mechanisms behind electroresistive switching have been persistently difficult to decipher and control, in part due to their non-equilibrium nature. Here, we demonstrate new experimental approaches that can probe resistive switching phenomena, utilizing amorphous TaO$_x$ as a model material system. Specifically, we apply Scanning Microwave Impedance Microscopy (sMIM) and cathodoluminescence (CL) microscopy as direct probes of conductance and electronic structure, respectively. These methods provide direct evidence of the electronic state of TaO$_x$ despite its amorphous nature. For example CL identifies characteristic impurity levels in TaO$_x$, in agreement with first principles calculations. We applied these methods to investigate He-ion-beam irradiation as a path to activate conductivity of materials and enable electroforming-free control over resistive switching. However, we find that even though He-ions begin to modify the nature of bonds even at the lowest doses, the films conductive properties exhibit remarkable stability with large displacement damage and they are driven to metallic states only at the limit of structural decomposition. Finally, we show that electroforming in a nanoscale junction can be carried out with a dissipated power of < 20 nW, a much smaller value compared to earlier studies and one that minimizes irreversible structural modifications of the films. The multimodal approach described here provides a new framework toward the theory/experiment guided design and optimization of electroresistive materials.

cond-mat.mtrl-sci↗

arXiv2023

Imaging Strain-Localized Single-Photon Emitters in Layered GaSe below the Diffraction Limit

Nanoscale strain control of exciton funneling is an increasingly critical tool for the scalable production of single photon emitters (SPEs) in two-dimensional materials. However, conventional far-field optical microscopies remain constrained in spatial resolution by the diffraction limit and thus can only provide a limited description of nanoscale strain localization of SPEs. Here, we quantify the effects of nanoscale heterogeneous strain on the energy and brightness of GaSe SPEs on nanopillars with correlative cathodoluminescence, photoluminescence, and atomic force microscopies supported by density functional theory simulations. We report the strain-localized SPEs have a broad range of emission wavelengths from 620 nm to 900 nm. We reveal substantial strain-controlled SPE wavelength tunability over a ~ 100 nm spectral range and two-orders of magnitude enhancement in the SPE brightness at the pillar center due to Type-I exciton funneling. In addition, we show that radiative biexciton cascade processes contribute to the observed CL photon superbunching. Also, the measured GaSe SPE photophysics after electron beam exposure shows the excellent stability of these SPEs. We anticipate this insight into nanoscale strain control of two-dimensional SPEs will guide the development of truly deterministic quantum photonics.

physics.optics↗

arXiv2023

Photon bunching in cathodoluminescence induced by indirect electron excitation

The impulsive excitation of ensembles of excitons or color centers by a high-energy electron beam results in the observation of photon bunching in the second-order correlation function of the cathodoluminescence generated by those emitters. Photon bunching in cathodoluminescence microscopy can be used to resolve the excited-state dynamics and the excitation and emission efficiency of nanoscale materials, and it can be used to probe interactions between emitters and nanophotonic cavities. Here, we report substantial changes in the measured bunching induced by indirect electron interactions (with indirect electron excitation inducing $g^{2}(0)$ values approaching $10^4$). This result is critical to the interpretation of $g^{2}(τ)$ in cathodoluminescence microscopies, and, more importantly, it provides a foundation for the nanoscale characterization of optical properties in beam-sensitive materials.

cond-mat.mes-hall↗

arXiv2022

Deterministic Localization of Strain-induced Single-photon Emitters in Multilayer GaSe

Nanoscale strain has emerged as a powerful tool for controlling single-photon emitters (SPEs) in atomically thin transition metal dichalcogenides (TMDCs)(1, 2). However, quantum emitters in monolayer TMDCs are typically unstable in ambient conditions. Multilayer two-dimensional (2D) TMDCs could be a solution, but they suffer from low quantum efficiency, resulting in low brightness of the SPEs. Here, we report the deterministic spatial localization of strain-induced single-photon emitters in multilayer GaSe by nanopillar arrays. The strain-controlled quantum confinement effect introduces well-isolated sub-bandgap photoluminescence and corresponding suppression of the broad band edge photoluminescence. Clear photon-antibunching behavior is observed from the quantum dot-like GaSe sub-bandgap exciton emission at 3.5 Kelvin. The strain-dependent confinement potential and the brightness are found to be strongly correlated, suggesting a promising route for tuning and controlling SPEs. The comprehensive investigations of strain-engineered GaSe SPEs provide a solid foundation for the development of 2D devices for quantum photonic technologies.

cond-mat.mtrl-sci↗

arXiv2022

Mapping the Pathways of Photo-induced Ion Migration in Organic-inorganic Hybrid Halide Perovskites

Organic-inorganic hybrid perovskites (OIHPs) exhibiting exceptional photovoltaic and optoelectronic properties are of fundamental and practical interest, owing to their tunability and low manufacturing cost. For practical applications, however, challenges such as material instability and the photocurrent hysteresis occurring in perovskite solar cells under light exposure need to be understood and addressed. While extensive investigations have suggested that ion migration is a plausible origin of these detrimental effects, detailed understanding of the ion migration pathways remains elusive. Here, we report the characterization of photo-induced ion migration in OIHPs using \textit{in situ} laser illumination inside a scanning electron microscope, coupled with secondary electron imaging, energy-dispersive X-ray spectroscopy and cathodoluminescence with varying primary electron energies. Using methylammonium lead iodide (MAPbI$_3$), formamidinium lead iodide (FAPbI$_3$) and hybrid formamidinium-methylammonium lead iodide as model systems, we observed photo-induced long-range migration of halide ions over hundreds of micrometers and elucidated the transport pathways of various ions both near the surface and inside the bulk of the OIHPs, including a surprising finding of the vertical migration of lead ions. Our study provides insights into ion migration processes in OIHPs that can aid OIHP material design and processing in future applications.

physics.app-ph↗

arXiv2022

Correlative nanoscale imaging of strained hBN spin defects

Spin defects like the negatively charged boron vacancy color center ($V_B^-$) in hexagonal boron nitride (hBN) may enable new forms of quantum sensing with near-surface defects in layered van der Waals heterostructures. Here, we reveal the effect of strain associated with creases in hBN flakes on $V_B^-$ and $V_B$ color centers in hBN with correlative cathodoluminescence and photoluminescence microscopies. We observe strong localized enhancement and redshifting of the $V_B^-$ luminescence at creases, consistent with density functional theory calculations showing $V_B^-$ migration toward regions with moderate uniaxial compressive strain. The ability to manipulate these spin defects with highly localized strain offers intriguing possibilities for future 2D quantum sensors.

cond-mat.mes-hall↗