arXiv subjects

Benjamin Lowe

Publications and source records attributed to Benjamin Lowe.

7 recordsLinked to original sources

arXiv2025

Atomic-scale control of substrate-spin coupling via vertical manipulation of a 2D metal-organic framework

Two-dimensional (2D) materials with frustrated crystal geometries can host strongly correlated electrons, potentially leading to a range of exotic many-body quantum phases such as Mott insulators, quantum spin-liquids, and Kondo lattices. The ability to control exchange-coupling within these systems is therefore highly desirable. Here, we use an atomically sharp scanning tunneling microscope probe to vertically manipulate a 2D Mott insulating kagome metal-organic framework (MOF) featuring Kondo-screened local magnetic moments on Ag(111). We show that by controlling the adsorption height of the MOF, we can also controllably and reversibly change the strength of Kondo coupling between the MOF's local spins and the substrate's conduction electrons. This mechanical control of Kondo coupling could be extended to other forms of interlayer exchange coupling, potentially allowing for atomic-scale design or control of spintronics technologies.

cond-mat.str-el↗

arXiv2025

Magnetic ground state discrimination of a Polyradical Nanog-raphene using Nickelocene-Functionalized Tips

Molecular magnets are a promising class of materials with exciting properties and applications. However, a profound understanding and application of such materials depends on the accurate detection of their electronic and magnetic properties. Despite the availability of experimental techniques that can sense the magnetic signal, the exact determination of the spin ground states and spatial distribution of exchange interaction of strongly correlated single-molecule magnets remains challenging. Here, we demonstrate that scanning probe microscopy with a nickelocene-functionalized probe can distinguish between nearly degenerate multireference ground states of single-molecule {\pi}-magnets and map their spatial distribution of the exchange interaction. This method expands the already outstanding imaging capabilities of scanning probe microscopy for characterizing the chemical and electronic structures of individual molecules, paving the way for the study of strongly correlated molecular magnets with unprecedented spatial resolution.

cond-mat.mtrl-sci↗

arXiv2024

Reversal of charge transfer doping on the negative electronic compressibility surface of MoS2

The strong electron-electron interaction in transition metal dichalcogenides (TMDs) gives rise to phenomena such as strong exciton and trion binding and excitonic condensation, as well as large negative exchange and correlation contributions to the electron energies, resulting in negative electronic compressibility. Here we use angle-resolved photoemission spectroscopy to demonstrate a striking effect of negative electronic compressibility in semiconducting TMD MoS2 on the charge transfer to and from a partial overlayer of monolayer semimetallic WTe2. We track the changes in binding energy of the valence bands of both WTe2 and MoS2 as a function of surface transfer doping with donor (K) and acceptor (F4-TCNQ) species. Donor doping increases the binding energy of the MoS2 valence band, as expected, while counterintuitively reducing the binding energy of the WTe2 valence bands and core levels. The inverse effect is observed for acceptor doping, where a typical reduction in the MoS2 binding energies is accopanied by an unexpected increase in those of WTe2. The observations imply a reversal of the expected charge transfer; donor (acceptor) deposition decreases (increases) the carrier density in the WTe2 adlayer. The charge transfer reversal is a direct consequence of the negative electronic compressibility of the MoS2 surface layer, for which addition (subtraction) of charge leads to attraction (repulsion) of further charge from neighbouring layers. These findings highlight the importance of many-body interactions for the electrons in transition metal dichalcogenides and underscore the potential for exploring strongly correlated quantum states in two-dimensional semiconductors.

cond-mat.str-el↗

arXiv2023

Selective Activation of Aromatic C-H Bonds Catalyzed by Single Gold Atoms at Room Temperature

Selective activation and controlled functionalization of C-H bonds in organic molecules is one of the most desirable processes in synthetic chemistry. Despite progress in heterogeneous catalysis using metal surfaces, this goal remains challenging due to the stability of C-H bonds and their ubiquity in precursor molecules, hampering regioselectivity. Here, we examine the interaction between 9,10-dicyanoanthracene (DCA) molecules and Au adatoms on a Ag(111) surface at room temperature (RT). Characterization via low-temperature scanning tunneling microscopy, spectroscopy, and noncontact atomic force microscopy, supported by theoretical calculations, revealed the formation of organometallic DCA-Au-DCA dimers, where C atoms at the ends of the anthracene moieties are bonded covalently to single Au atoms. The formation of this organometallic compound is initiated by a regioselective cleaving of C-H bonds at RT. Hybrid quantum mechanics/molecular mechanics calculations show that this regioselective C-H bond cleaving is enabled by an intermediate metal-organic complex which significantly reduces the dissociation barrier of a specific C-H bond. Harnessing the catalytic activity of single metal atoms, this regioselective on-surface C-H activation reaction at RT offers promising routes for future synthesis of functional organic and organometallic materials.

physics.chem-ph↗

arXiv2023

Local gate control of Mott metal-insulator transition in a 2D metal-organic framework

Electron-electron interactions in materials lead to exotic many-body quantum phenomena including Mott metal-insulator transitions (MITs), magnetism, quantum spin liquids, and superconductivity. These phases depend on electronic band occupation and can be controlled via the chemical potential. Flat bands in two-dimensional (2D) and layered materials with a kagome lattice enhance electronic correlations. Although theoretically predicted, correlated-electron Mott insulating phases in monolayer 2D metal-organic frameworks (MOFs) with a kagome structure have not yet been realised experimentally. Here, we synthesise a 2D kagome MOF on a 2D insulator. Scanning tunnelling microscopy (STM) and spectroscopy reveal a MOF electronic energy gap of ~200 meV, consistent with dynamical mean field theory predictions of a Mott insulator. Combining template-induced (via work function variations of the substrate) and STM probe-induced gating, we locally tune the electron population of the MOF kagome bands and induce Mott MITs. These findings enable technologies based on electrostatic control of many-body quantum phases in 2D MOFs.

cond-mat.str-el↗

arXiv2023

Imaging the breakdown and restoration of topological protection in magnetic topological insulator MnBi$_2$Te$_4$

Quantum anomalous Hall (QAH) insulators transport charge without resistance along topologically protected chiral one-dimensional edge states. Yet, in magnetic topological insulators (MTI) to date, topological protection is far from robust, with the zero-magnetic field QAH effect only realised at temperatures an order of magnitude below the N\'eel temperature TN, though small magnetic fields can stabilize QAH effect. Understanding why topological protection breaks down is therefore essential to realising QAH effect at higher temperatures. Here we use a scanning tunnelling microscope to directly map the size of the exchange gap (Eg,ex) and its spatial fluctuation in the QAH insulator 5-layer MnBi$_2$Te$_4$. We observe long-range fluctuations of Eg,ex with values ranging between 0 (gapless) and 70 meV, uncorrelated to individual point defects. We directly image the breakdown of topological protection, showing that the chiral edge state, the hallmark signature of a QAH insulator, hybridizes with extended gapless metallic regions in the bulk. Finally, we unambiguously demonstrate that the gapless regions originate in magnetic disorder, by demonstrating that a small magnetic field restores Eg,ex in these regions, explaining the recovery of topological protection in magnetic fields. Our results indicate that overcoming magnetic disorder is key to exploiting the unique properties of QAH insulators.

cond-mat.mtrl-sci↗

arXiv2021

Manifestation of strongly correlated electrons in a 2D kagome metal-organic framework

The kagome lattice, whose electronic valence band (VB) structure includes two Dirac bands and one flat band, offers a rich space to realise tuneable topological and strongly correlated electronic phases in two-dimensional (2D) and layered materials. While strong electron correlations have been observed in inorganic kagome crystals, they remain elusive in organic systems. The latter offer versatile synthesis protocols via molecular self-assembly and metal-ligand coordination. Here, we report the synthesis of a 2D metal-organic framework (MOF) where di-cyano-anthracene (DCA) molecules form a kagome arrangement via coordination with copper (Cu) atoms on a silver surface [Ag(111)]. Low-temperature scanning tunnelling spectroscopy revealed Kondo screening--by the Ag(111) conduction electrons--of magnetic moments localised at Cu and DCA sites of the MOF. Density functional theory and mean-field Hubbard modelling show that these local moments emerge from strong interactions between kagome MOF electrons, enabling organic 2D materials as viable platforms for strongly correlated nanoelectronics and spintronics.

cond-mat.str-el↗