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Bernard Dieny

Publications and source records attributed to Bernard Dieny.

At least 19 recordsLinked to original sources

Modelling of magnetic vortex microdisc dynamics under varying magnetic field in biological viscoelastic environments

Magnetically driven microparticles provide a versatile platform for probing and manipulating biological systems, yet the physical framework governing their actuation in complex environments remains only partially explored. Within the field of cellular magneto-mechanical stimulation, vortex microdiscs have emerged as particularly promising candidates for developing novel therapeutic approaches. Here, we introduce a simplified two-dimensional model describing the magneto-mechanical response of such particles embedded in viscoelastic media under varying magnetic fields. Using a Maxwell description of the medium combined with simplified elasticity assumptions, we derive analytical expressions and support them with numerical simulations of particle motion under both oscillating and rotating magnetic fields. Our results show that rotating fields typically induce oscillatory dynamics and that the transition to asynchronous motion occurs at a critical frequency determined by viscosity and stiffness. The amplitude and phase of this motion is governed by the competition between magnetic and viscoelastic contributions, with particle motion being strongly impaired when the latter dominate. Energy-based considerations further demonstrate that, within the frequency range explored of few tens of Hertz, no heat is generated -- distinguishing this approach from magnetic hyperthermia -- while the elastic energy transferred to the surrounding medium is, in principle, sufficient to perturb major cellular processes. This work provides a simple framework to anticipate the first-order influence of rheological properties on magnetically driven microdisc dynamics, thereby enabling a better understanding of their impact in cells or extracellular materials and bridging the gap between experimental observations and theoretical modelling.

cond-mat.soft

Low-Noise Nanoscale Vortex Sensor for Out-of-Plane Magnetic Field Detection

This study investigates a vortex sensor based on a nanoscale (sub-100 nm) magnetic tunnel junction (MTJ) with a strong shape anisotropy, designed for sensitivity to the out-of-plane magnetic field component ($H_z$). The sensor comprises a free layer with a vortex configuration and a perpendicularly magnetized reference layer, which provides a reproducible and linear response when excited by a perpendicular magnetic field. Experimental measurements and micromagnetic simulations were combined to systematically assess the influence of structural parameters, specifically aspect ratio and defect landscape, on key sensor performance metrics, including dynamic range, sensitivity, and detectivity. The out-of-plane vortex sensor demonstrates a significantly improved dynamic range exceeding 200 mT, compared to the 40-80 mT typical of conventional in-plane vortex sensors. Frequency-dependent noise measurements reveal that the sensor exhibits low intrinsic noise, along with improved detectivity and resolution. This performance is ascribed to the field-dependent expansion and contraction of the vortex core, which reduces Barkhausen-type noise caused by defect-induced pinning potentials. Moreover, the sub-100\,nm lateral dimensions of the sensor enable scalable array integration, providing further enhancements in noise and detectivity through collective averaging. These results underscore the potential of this sensor architecture for advanced magnetic field sensing applications requiring a wide dynamic range and high measurement accuracy at the same time.

cond-mat.mes-hall

Impact of external magnetic fields on STT-MRAM

This application note discusses the working principle of spin-transfer torque magnetoresistive random access memory (STT-MRAM) and the impact that magnetic fields can have on STT-MRAM operation. Sources of magnetic field and typical magnitudes of magnetic fields are given. Based on the magnitude of commonly encountered external magnetic fields, we show below that magnetic immunity of STT-MRAM is sufficient for most uses once the chip is mounted on a printed circuit board (PCB) or inserted in its working environment. This statement is supported by the experience acquired during 60 years of use of magnetic hard disk drives (HDD) including 20 years of HDD with readers comprising magnetic tunnel junctions, 20+ years of use of magnetic field sensors as position encoders in automotive industry and 15+ years of use of MRAM. Mainly during chip handling does caution need to be exercised to avoid exposing the chip to excessively high magnetic fields.

physics.app-ph

Roadmap to Neuromorphic Computing with Emerging Technologies

The roadmap is organized into several thematic sections, outlining current computing challenges, discussing the neuromorphic computing approach, analyzing mature and currently utilized technologies, providing an overview of emerging technologies, addressing material challenges, exploring novel computing concepts, and finally examining the maturity level of emerging technologies while determining the next essential steps for their advancement.

eess.SP

Comparison of stable spin textures in in-plane vs. out-of-plane magnetized exchange-biased multilayers

This paper delves into the origins and specificity of the unique stable spin textures (360° closed loop domain walls and skyrmions) observed in exchange-biased systems, with either in-plane or out-of-plane magnetic anisotropy. In the case of skyrmions, which are nanometer-sized bubbles consisting of closed-loop 180° walls in perpendicularly-magnetized media, the stability of these spin textures arises from the existence of Dzyaloshinskii-Moriya Interactions (DMI). These interactions induce chirality of the domain walls, yielding to some extent a so-called topological protection. More complex structures such as skyrmoniums have been observed, consisting of closed loop 360° walls. Recently, skyrmions formed in the absence of an applied external magnetic field have been stabilized in exchange biased out-of-plane magnetized systems. About two decades ago, another type of stable spin-textures were observed in exchange biased systems, with in-plane magnetization, in particular in the pinned reference layer of spin-valves. These textures consist of 360°-domain-wall rings, the stability of which arises from the easy-plane shape anisotropy of these layers. In this paper, we compare these spin-textures and highlight the similarities and differences in their formation, structure and origin of their stability.

cond-mat.mes-hall

Spiking Dynamics in Dual Free Layer Perpendicular Magnetic Tunnel Junctions

Spintronic devices have recently attracted a lot of attention in the field of unconventional computing due to their non-volatility for short and long term memory, non-linear fast response and relatively small footprint. Here we report how voltage driven magnetization dynamics of dual free layer perpendicular magnetic tunnel junctions enable to emulate spiking neurons in hardware. The output spiking rate was controlled by varying the dc bias voltage across the device. The field-free operation of this two terminal device and its robustness against an externally applied magnetic field make it a suitable candidate to mimic neuron response in a dense Neural Network (NN). The small energy consumption of the device (4-16 pJ/spike) and its scalability are important benefits for embedded applications. This compact perpendicular magnetic tunnel junction structure could finally bring spiking neural networks (SNN) to sub-100nm size elements.

physics.app-ph

Unveiling temperature dependence mechanisms of perpendicular magnetic anisotropy at Fe/MgO interfaces

The perpendicular magnetic anisotropy (PMA) at magnetic transition metal/oxide interfaces is a key element in building out-of-plane magnetized magnetic tunnel junctions for spin-transfer-torque magnetic random access memory (STT-MRAM). Size downscaling renders magnetic properties more sensitive to thermal effects. Thus, understanding the temperature dependence of the magnetic anisotropy is crucial. In this work, we theoretically address the correlation between temperature dependence of PMA and magnetization in typical Fe/MgO-based structures. In particular, the possible mechanisms behind the experiments reporting deviations from the Callen and Callen scaling power law are analyzed. At ideal interfaces, first-principles calculations reveal (i) small high-order anisotropy constants compared to first order and (ii) enhanced exchange constants. Considering these two intrinsic effects in the atomistic simulations, the temperature-dependence of the total and layer-resolved anisotropy are found to follow the Callen and Callen scaling power law, thus ruling out an intrinsic microscopic mechanism underlying deviations from this law. Besides, two possible extrinsic macroscopic mechanisms are unveiled namely the influence of the dead layer, often present in the storage layer of STT-MRAM cells, and the spatial inhomogeneities of the interfacial magnetic anisotropy. About the first mechanism, we show that the presence of a dead layer tends to reduce the scaling exponents. In the second mechanism, increasing the percentage of inhomogeneity in the interfacial PMA is revealed to decrease the scaling exponent. These results allow us to explain the difference in scaling exponents relating anisotropy and magnetization thermal variations reported in earlier experiments. This is crucial for the understanding of the thermal stability of the storage layer magnetization in STT-MRAM applications.

cond-mat.mtrl-sci

Off-axis electron holography for the direct visualization of perpendicular shape anisotropy in nano-scale 3D magnetic random-access-memory devices

Perpendicular shape anisotropy (PSA) and double magnetic tunnel junctions (DMTJ) offer practical solutions to downscale spin-transfer-torque Magnetic Random-Access Memory (STT-MRAM) beyond 20 nm technology nodes, whilst retaining their thermal stability and reducing critical currents applied. However, as these modern devices become smaller and three-dimensionally (3D) complex, our understanding of their functional magnetic behavior is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. In this paper, we review recent work that was performed on these structures using a range of advanced electron microscopy techniques, focusing on aspects specific to the 3D and nanoscale nature of such elements. We present the methodology for the systematic transfer of individual SST-MRAM nano-pillars from large-scale arrays to image their magnetic configurations directly using off-axis electron holography. We show that improved phase sensitivity through stacking of electron holograms can be used to image subtle variations in DMTJs and the thermal stability of < 20 nm PSA-STT-MRAM nano-pillars during in-situ heating. The experimental practicalities, benefits and limits of using electron holography for analysis of MRAM devices are discussed, unlocking practical pathways for direct imaging of the functional magnetic performance of these systems with high spatial resolution and sensitivity.

cond-mat.mes-hall

Direct observation of the perpendicular shape anisotropy and thermal stability of p-STT-MRAM nano-pillars

Perpendicular shape anisotropy (PSA) offers a practical solution to downscale spin-transfer torque Magnetic Random-Access Memory (STT-MRAM) beyond the sub-20 nm technology node whilst retaining thermal stability of the storage layer magnetization. However, our understanding of the thermomagnetic behavior of PSA-STT-MRAM is often indirect, relying on magnetoresistance measurements and micromagnetic modelling. Here, the magnetism of a FeCoB / NiFe PSA-STT-MRAM nano-pillar is investigated using off-axis electron holography, providing spatially resolved magnetic information as a function of temperature, which has been previously inaccessible. Magnetic induction maps reveal the micromagnetic configuration of the NiFe storage layer (60 nm high, 20 nm diameter), confirming the PSA induced by its 3:1 aspect ratio. In-situ heating demonstrates that the PSA of the FeCoB / NiFe composite storage layer is maintained up to at least 250 degrees centigrade, and direct quantitative measurements reveal the very moderate decrease of magnetic induction with temperature. Hence, this study shows explicitly that PSA provides significant stability in STT-MRAM applications that require reliable performance over a range of operating temperatures.

cond-mat.mtrl-sci

Ultra-fast GHz-range swept-tuned spectrum analyzer with 20 ns temporal resolution based on a spin-torque nano-oscillator with a uniformly magnetized 'free' layer

The advantage of an ultra-fast frequency-tunability of spin-torque nano-oscillators (STNOs) that have large (> 100MHz) relaxation frequency of amplitude fluctuations is exploited to realize ultra-fast wide-band time-resolved spectral analysis at nanosecond time scale with the frequency resolution limited only by the 'bandwidth' theorem. The demonstration is performed with an STNO generating in the 9 GHz frequency range, and comprised of a perpendicular polarizer and a perpendicularly and uniformly magnetized 'free' layer. It is shown that such a uniform-state STNO-based spectrum analyzer can efficiently perform spectral analysis of frequency-agile signals with rapidly varying frequency components.

physics.app-ph

Target domains in nanometric Permalloy disks with columnar structure

We conducted a thorough experimental and numerical study of the micromagnetic properties of Permalloy (Ni$_{80}$Fe$_{20}$) microdisks exhibiting target domain structures at remanence. Vortex configurations are quite common in such microdisks and correspond to an in-plane flux closure configuration of cylindrical symmetry with an out-of-plane magnetized core. In contrast, target domain configuration are observed in thicker microdisks and are characterized by a vortex configuration of the in-plane component of the magnetization superposed to an out-of-plane component of magnetization which oscillates as a function of the distance to the microdisk center resulting in the formation of concentric domains. The ratio of the out-of-plane oscillatory component of the magnetization to the in-plane vortex one increases with the thickness of the microdisk. Hysteresis loops were measured under in-plane and out-of-plane field. The results at remanence and under magnetic field could be interpreted by micromagnetic simulations in which the microdisks were described as an assembly of partially coupled columns representing the granular nanostructure of the films from which the microdisks were patterned. Quite original magnetization processes take place in these microdisks exhibiting target domain remanent configuration. These include in particular entire flipping of the domain configuration and annihilation/creation of ring domains.

cond-mat.mtrl-sci

Observation of magnetic helicoidal dichroism with extreme ultraviolet light vortices

We report on the experimental evidence of magnetic helicoidal dichroism, observed in the interaction of an extreme ultraviolet vortex beam carrying orbital angular momentum with a magnetic vortex. Numerical simulations based on classical electromagnetic theory show that this dichroism is based on the interference of light modes with different orbital angular momenta, which are populated after the interaction between the light phase chirality and the magnetic topology. This observation gives insight into the interplay between orbital angular momentum and magnetism, and sets the framework for the development of new analytical tools to investigate ultrafast magnetization dynamics.

physics.optics

All-optical spin switching probability in [Tb/Co] multilayers

Since the first experimental observation of all-optical switching phenomena, intensive research has been focused on finding suitable magnetic systems that can be integrated as storage elements within spintronic devices and whose magnetization can be controlled through ultra-short single laser pulses. We report here atomistic spin simulations of all-optical switching in multilayered structures alternating n monolayers of Tb and m monolayers of Co. By using a two temperature model, we numerically calculate the thermal variation of the magnetization of each sublattice as well as the magnetization dynamics of [Tbn/Com] multilayers upon incidence of a single laser pulse. In particular, the condition to observe thermally-induced magnetization switching is investigated upon varying systematically both the composition of the sample (n,m) and the laser fluence. The samples with one monolayer of Tb as [Tb1/Co2] and [Tb1/Co3] are showing thermally induced magnetization switching above a fluence threshold. The reversal mechanism is mediated by the residual magnetization of the Tb lattice while the Co is fully demagnetized in agreement with the models developed for ferrimagnetic alloys. The switching is however not fully deterministic but the error rate can be tuned by the damping parameter. Increasing the number of monolayers the switching becomes completely stochastic. The intermixing at the Tb/Co interfaces appears to be a promising way to reduce the stochasticity. These results predict for the first time the possibility of TIMS in [Tb/Co] multilayers and suggest the occurrence of sub-picosecond magnetization reversal using single laser pulses.

physics.app-ph

Giant perpendicular magnetic anisotropy enhancement in MgO-based magnetic tunnel junction by using Co/Fe composite layer

Magnetic tunnel junctions with perpendicular anisotropy form the basis of the spin-transfer torque magnetic random-access memory (STT-MRAM), which is non-volatile, fast, dense, and has quasi-infinite write endurance and low power consumption. Based on density functional theory (DFT) calculations, we propose an alternative design of magnetic tunnel junctions comprising Fe(n)Co(m)Fe(n)/MgO storage layers with greatly enhanced perpendicular magnetic anisotropy (PMA) up to several mJ/m2, leveraging the interfacial perpendicular anisotropy of Fe/MgO along with a stress-induced bulk PMA discovered within bcc Co. This giant enhancement dominates the demagnetizing energy when increasing the film thickness. The tunneling magnetoresistance (TMR) estimated from the Julliere model is comparable with that of the pure Fe/MgO case. We discuss the advantages and pitfalls of a real-life fabrication of the structure and propose the Fe(3ML)Co(4ML)Fe(3ML) as a storage layer for MgO-based STT-MRAM cells. The large PMA in strained bcc Co is explained in the framework of Bruno's model by the MgO-imposed strain and consequent changes in the energies of dyz and dz2 minority-spin bands.

cond-mat.mtrl-sci

Realizing an Isotropically Coercive Magnetic Layer for Memristive Applications by Analogy to Dry Friction

We investigate the possibility of realizing a spintronic memristive device based on the dependence of the tunnel conductance on the relative angle between the magnetization of the two magnetic electrodes in in-plane magnetized tunnel junctions. For this, it is necessary to design a free layer whose magnetization can be stabilized along several or even any in-plane direction between the parallel and the antiparallel magnetic configurations. We experimentally show that this can be achieved by exploiting antiferromagnet-ferromagnet exchange interactions in a regime where the antiferromagnet is thin enough to induce enhanced coercivity and no exchange bias. The frustration of exchange interactions at the interfaces due to competing ferro- and antiferromagnetic interactions is at the origin of an isotropic dissipation mechanism yielding isotropic coercivity. From a modeling point of view, it is shown that this isotropic dissipation can be described by a dry friction term in the Landau-Lifshitz-Gilbert equation. The influence of this dry friction term on the magnetization dynamics of an in-plane magnetized layer submitted to a rotating in-plane field is investigated both analytically and numerically. The possibility to control the free layer magnetization orientation in an in-plane magnetized magnetic tunnel junction by using the spin transfer torque from an additional perpendicular polarizer is also investigated through macrospin simulation. It is shown that the memristor function can be achieved by the injection of current pulses through the stack in the presence of an in-plane static field transverse to the reference layer magnetization, the aim of which is to limit the magnetization rotation between 0° and 180°.

physics.app-ph

Opportunities and challenges for spintronics in the microelectronic industry

Spin-based electronics has evolved into a major field of research that broadly encompasses different classes of materials, magnetic systems, and devices. This review describes recent advances in spintronics that have the potential to impact key areas of information technology and microelectronics. We identify four main axes of research: nonvolatile memories, magnetic sensors, microwave devices, and beyond-CMOS logic. We discuss state-of-the-art developments in these areas as well as opportunities and challenges that will have to be met, both at the device and system level, in order to integrate novel spintronic functionalities and materials in mainstream microelectronic platforms.

physics.app-ph

InMRAM: Introductory course on Magnetic Random Access Memories for microelectronics students and engIneers

Magnetic Random Access Memories (MRAM) interest is growing fast in the microelectronics industry. Commercial MRAM products already exist and all major industrial players have launched large R\&D efforts to bring Spin Transfer Torque MRAM to production. The principle goal is to replace part of the memory hierarchy (in particular DRAM) by MRAM below the 20nm node. Interest in bringing non-volatile elements closer to the logic is also growing, in order to improve the performance of electronic circuits by increasing the bandwidth between logic and memory and reducing the power consumption. Despite this nsmg interest, very few microelectronics engineers have a background in magnetism and even more in spinelectronics so that it is very difficult for them to get into this emerging field. Magnetism and microelectronics communities have worked separately so far. We are convinced it is time to develop more relationships between these two communities through joint symposia, workshops, conferences, as well as to introduce some courses in magnetism and spin electronics in the education of young microelectronics engineers. In this context, SPINTEC, a French lab associated to CEA/CNRS/Grenoble University, started organizing last year an annual Introductory Course on MRAM (InMRAM) for students, engineers and researchers having no or little background in magnetism. The second edition will take place in Grenoble from 2nd to 4th July 2014.

physics.app-ph

Impact of intergrain spin transfer torques due to huge thermal gradients on the performance of heat assisted magnetic recording

Heat assisted magnetic recording (HAMR) is a new technology which uses temporary near field laser heating of the media during write to increase hard disk drive storage density. By using plasmonic antenna embedded in the write head, extremely high thermal gradient are created in the recording media (up to 10K/nm). State of the art HAMR media consists of grains of FePtX ordered alloys exhibiting high perpendicular anisotropy separated by insulating grain boundaries. Nearby the plasmonic antenna, the difference of temperature between two 8nm wide neighboring grains in the media can reach 80K, representing a gigantic thermal gradient of ~40K/nm across the grain boundary. Such situations with much weaker thermal gradient (~1K/nm, already considered as very large) have already been studied in the field of spincaloritronics. There, it was shown that very large spin transfer torques due to thermal gradients can arise in magnetic tunnel junctions which can even yield magnetization switching. Considering that two neighboring grains separated by an insulating grain boundary in a HAMR media can be viewed as a magnetic tunnel junction and that the thermal gradients in HAMR are one to two orders of magnitude larger than those existing in conventional spincaloritronics, one may expect a major impact from these thermal torques on magnetization switching dynamics and therefore on HAMR recording performances. This paper combines theory, experiments aiming at determining the polarization of tunneling electrons across the media grain boundaries, and micromagnetic simulations of recording process. It is shown that the thermal in-plane torque can have a detrimental impact on the recording performances by favoring antiparallel magnetic alignment between neighboring grains during the media cooling. Implications on media design are discussed in order to limit the impact of these thermal torques.

physics.app-ph