Bernhard Putzer | Searcharxiv

arXiv2025

Eliashberg Theory and Superfluid Stiffness of Band-Off-Diagonal Pairing in Twisted Graphene

Recently, band-off-diagonal superconductivity has been proposed [Nat. Commun. 14, 7134 (2023)] as a candidate pairing state for twisted graphene systems. Based on mean-field theory, it was shown that it not only naturally emerges from both intervalley electron-phonon coupling and fluctuations of the nearby correlated insulator, but also exhibits nodal and gapped regimes as indicated by scanning tunneling microscopy experiments. Here we study band-off-diagonal pairing within Eliashberg theory. We show that despite the additional frequency dependence, the leading-order description of both intervalley coherent fluctuations or intervalley phonons exhibits a symmetry prohibiting admixture of an intraband component to the interband pairing state. It is found that even- and odd-frequency pairing mix, which originates from the reduced number of flavor degrees of freedom in the normal state. From analytic continuation, we obtain the electronic spectral function showing that, also within Eliashberg theory, the interband nature leads to an enhanced spectral weight below the order-parameter energy compared to band-diagonal pairing. Finally, we also study the superfluid stiffness of band-off-diagonal pairing, taking into account multi-band and quantum geometry effects. It is shown that for $s$-wave and chiral momentum dependencies, conventionally leading to fully gapped phases, an interband structure reduces the temperature scale below which the stiffness saturates. Depending on parameters, for the chiral state, this scale can even be suppressed all the way to zero temperature leading to a complex competition of multiple dispersive and geometrical contributions. Our results show that interband pairing might also be able to explain more recent stiffness measurements in the superconducting state of twisted multilayer graphene.

cond-mat.supr-con↗

arXiv2024

Band theory for heterostructures with interface superlattices

Motivated by recent experiments demonstrating the creation of atomically sharp interfaces between hexagonal sapphire and cubic SrTiO$_3$ with finite twist, we here develop and study a general electronic band theory for this novel class of moir\'e heterostructures. We take into account the three-dimensional nature of the two crystals, allow for arbitrary combinations of Bravais lattices, finite twist angles, and different locations in momentum space of the low-energy electronic bands of the constituent materials. We analyze the general condition for a well-defined crystalline limit in the interface electron system and classify the associated "crystalline reference points". We discuss this in detail for the example of the two-dimensional lattice planes being square and triangular lattices on the two sides of the interface; this reveals non-trivial reference points at finite twist angle and lattice mismatch, leading to a novel form of magic angles, which we refer to as "geometric magic angles". We further show that band structures of mixed dimensionality naturally emerge, where quasi-one- and two-dimensional pockets coexist. Explicit computations for different bulk Bloch Hamiltonians yield a collection of interesting features, such as isolated bands localized at interfaces of non-topological insulators, Dirac cones, van Hove singularities, a non-trivial evolution of the band structures with Zeeman-field, and topological interface bands. Our work illustrates the potential of these heterostructures and is anticipated to provide the foundation for moir\'e interface design and for the analysis of correlated physics in these systems.

cond-mat.mes-hall↗