arXiv subjects

Bhagwati Prasad

Publications and source records attributed to Bhagwati Prasad.

5 recordsLinked to original sources

arXiv2026

Long wave infrared detection using probabilistic spintronic bolometer arrays

The use of probabilistic spintronic devices for infrared radiation detection has introduced a shift in approach to thermal imaging. The integration of probabilistic magnetic tunnel junctions with infrared plasmonic nano-antennas achieves high-sensitivity digital-mode infrared sensors at room temperature. Here, we present a scalable approach towards multipixel plasmonic-spintronic bolometer array fabrication and readout. We fabricate proof-of-concept 2x2 row-column multiplexed probabilistic plasmonic sprintronic arrays and show their response to long-wave infrared radiation (8-14um) with high readout speeds (10K-1M counts per second). These spintronic, ultrafast, nanoscale (SUN) bolometers can result in novel high-pixel density CMOS compatible infrared detection platforms. Our work provides a broadband (9kHz to 3GHz) readout platform for future digital probabilistic detector applications. Furthermore, our approach addresses a key challenge associated with scaling infrared pixel sizes that can drive progress towards high pixel density detector arrays for infrared sensing and microscopy applications.

physics.ins-det↗

arXiv2026

Anion Doping Driven Non-Ferroelectric-to-Ferroelectric Phase Transition in Epitaxial Y:HfO2

Oxygen vacancies are often essential for stabilizing the orthorhombic ferroelectric phase in HfO2, with cationic doping widely employed to introduce such defects. In contrast, systematic studies on anionic doping to induce ferroelectricity remains largely in nascent stages. Here, using epitaxial Y:HfO2 films grown on ITO-buffered YSZ substrates that initially crystallize predominantly in the monoclinic non-polar phase, we demonstrate that post-deposition rapid thermal annealing in N2 atmosphere at 900 °C enables nitrogen incorporation without disrupting epitaxy. As the annealing duration increases from 10 s to 2 min, the monoclinic phase diminishes, accompanied by the emergence of robust ferroelectric hysteresis and a corresponding increase in the orthorhombic phase fraction. Combining independent spectroscopic and compositional analyses, we experimentally establish that nitrogen preferentially incorporates into pre-existing neutral oxygen-vacancy sites, converting them into charged oxygen vacancies that drive the transformation from the non-polar monoclinic phase to the ferroelectric orthorhombic phase. Our epitaxial model platform therefore reveals an anion-mediated defect-engineering pathway for controlling ferroelectricity in Y:HfO2, establishing nitrogen incorporation not merely as a chemical dopant, but as a route to fundamentally reconfigure the defect thermodynamics governing phase stability in fluorite ferroelectrics.

cond-mat.mtrl-sci↗

arXiv2026

Ultra-broadband Mid to Long-wave Infrared Spintronic Poisson Bolometer

Infrared detectors have traditionally been divided into two fundamental classes, mid-wave (MWIR, 3-5 um) and long-wave (LWIR, 8-14 um). Integrating MWIR and LWIR within a single device is challenging due to distinct materials, cooling needs, and detection mechanisms, while such integration is critical for improved object recognition, temperature estimation, and environmental sensing. In this work, we demonstrate a Spintronic Poisson (SP) bolometer enabling room-temperature ultra-broadband sensing across 3-14 um. Unlike conventional bolometers that rely on continuous analog signals, the SP bolometer implements a Poisson-counting detection paradigm, encoding temperature in discrete stochastic events, which turns thermal noise from a limitation into the basis of the estimator itself. We fabricate the SP bolometer using a spintronic transduction layer integrated with a plasmonic nanoantenna array to enhance broadband infrared absorption. Using spintronic transduction, the device achieves the noise-equivalent temperature difference (NETD, thermal sensitivity metric) of 80-100 mK at 300 K, surpassing uncooled detectors and approaching cooled technologies. This work establishes a statistical detection paradigm for room-temperature infrared sensing with broad application potential.

physics.optics↗

arXiv2024

Voltage-based magnetization switching and reading in magnetoelectric spin-orbit nanodevices

As CMOS technologies face challenges in dimensional and voltage scaling, the demand for novel logic devices has never been greater, with spin-based devices offering scaling potential, at the cost of significantly high switching energies. Alternatively, magnetoelectric materials are predicted to enable low-power magnetization control, a solution with limited device-level results. Here, we demonstrate voltage-based magnetization switching and reading in nanodevices at room temperature, enabled by exchange coupling between multiferroic BiFeO$_3$ and ferromagnetic CoFe, for writing, and spin-to-charge current conversion between CoFe and Pt, for reading. We show that upon the electrical switching of the BiFeO$_3$, the magnetization of the CoFe can be reversed, giving rise to different voltage outputs. Through additional microscopy techniques, magnetization reversal is linked with the polarization state and antiferromagnetic cycloid propagation direction in the BiFeO$_3$. This study constitutes the building block for magnetoelectric spin-orbit logic, opening a new avenue for low-power beyond-CMOS technologies.

cond-mat.mes-hall↗

arXiv2018

A high-energy density antiferroelectric made by interfacial electrostatic engineering

Dielectric capacitors hold a tremendous advantage for energy storage due to their fast charge/discharge times and stability in comparison to batteries and supercapacitors. A key limitation to today's dielectric capacitors, however, is the low storage capacity of conventional dielectric materials. To mitigate this issue, antiferroelectric materials have been proposed, but relatively few families of antiferroelectric materials have been identified to date. Here, we propose a new design strategy for the construction of lead-free antiferroelectric materials using interfacial electrostatic engineering. We begin with a ferroelectric material with one of the highest known bulk polarizations, BiFeO3. We show that by confining atomically-precise thin layers of BiFeO3 in a dielectric matrix that we can induce a metastable antiferroelectric structure. Application of an electric field reversibly switches between this new phase and a ferroelectric state, in addition, tuning of the dielectric layer causes coexistence of the ferroelectric and antiferroelectric states. Precise engineering of the structure generates an antiferroelectric phase with energy storage comparable to that of the best lead-based materials. The use of electrostatic confinement provides a new pathway for the design of engineered antiferroelectric materials with large and potentially coupled responses.

cond-mat.mtrl-sci↗