arXiv subjects

Bhawna Sahni

Publications and source records attributed to Bhawna Sahni.

9 recordsLinked to original sources

arXiv2026

Thermoelectric properties of Topological Weyl Semimetal Cu$_2$ZnGeTe$_4$

The exploration of topological quantum materials for thermoelectric (TE) applications offers an opportunity to combine nontrivial electronic topology with efficient energy conversion. Topological semimetals (TSMs), including Dirac, Weyl, and nodal-line systems, can exhibit favourable transport properties arising from the coexistence of dispersive and relatively flat bands near the Fermi level (E_F). However, their gapless electronic structure can also suppress thermopower and enhance electronic thermal conductivity, limiting the overall TE performance. Here, we combine first-principles calculations and transport measurements to investigate Cu2ZnGeTe4 as a lattice-tunable platform connecting thermoelectric and topological electronic phases. At the experimentally measured lattice parameters, Cu2ZnGeTe4 is a narrow-gap semiconductor with a calculated band gap of approximately 0.067 eV and a maximum calculated ZT of approximately 1. Experimentally, the compound exhibits p-type semiconducting behavior and low lattice thermal conductivity, yielding a ZT of approximately 0.14 at 623 K and reproducing the calculated temperature-dependent transport trends. Upon lattice expansion, first-principles calculations predict band inversion and a transition to a Weyl-semimetallic phase with Weyl nodes of opposite chirality and topological surface states. Although this phase exhibits enhanced electrical conductivity and a high power factor, its maximum ZT of approximately 0.36 remains lower than that of the semiconducting phase because of concomitant increases in electronic and lattice thermal conductivities. Isovalent Sn substitution at the Ge site reproduces the essential electronic features of the expanded phase, providing a possible chemical route toward the predicted topologically nontrivial state.

cond-mat.mtrl-sci↗

arXiv2026

Dimensional Confinement Driven Scattering Inversion in NaCrTe$_2$

Dimensionality reduction provides a powerful route to tune the electronic and magnetic properties of van der Waals materials, yet its influence on electronic transport remains complex due to competing effects from quantum confinement and modified scattering mechanisms. Here, we investigate this interplay in an antiferromagnetic semiconductor $\text{NaCrTe}_2$ using first-principles calculations combined with the Boltzmann transport equation beyond the constant relaxation time approximation. Our results show that the monolayer limit induces a coupled magnetostructural reconstruction, reducing the band gap from $0.44$ eV (bulk) to $0.15$ eV (monolayer) and significantly enhancing the static dielectric constant. This evolution triggers a fundamental scattering inversion: whereas bulk transport is limited by polar optical phonon (POP) scattering, the monolayer becomes dominated by acoustic deformation potential (ADP) scattering. We show that this crossover originates from the simultaneous suppression of the Fröhlich interaction through enhanced dielectric screening and the amplification of acoustic scattering due to pronounced lattice softening. These results clarify how the interplay between dielectric screening, lattice stiffness, and band topology governs transport in low-dimensional magnetic semiconductors, providing a framework to optimize their electronic performance.

cond-mat.mtrl-sci↗

arXiv2026

Carrier scattering considerations and thermoelectric power factors of half-Heuslers

The electronic and thermoelectric (TE) transport properties of 13 n-type and p-type half-Heusler alloys are computationally examined using Boltzmann transport. The electronic scattering times resulting from all relevant phonon interactions and ionized impurity scattering (IIS) are fully accounted for using ab initio extracted parameters. We find that at room temperature the average peak TE power factors (PF) of all materials we examine reside between 5 and 10 mW/mK$^2$. We also find that IIS in combination with the long range polar optical phonon (POP) scattering are more influential in determining the electronic transport and PF over all other non-polar phonon interactions (acoustic and optical phonon transport). In fact, the combination of POP and IIS determines the thermoelectric power factor of the half-Heuslers examined on average by about 65\%. The results highlight the crucial impact of Coulombic scattering process (POP and IIS) on the TE properties of half-Heusler alloys and provide profound insight for understanding transport, which can be applied widely in other complex bandstructure materials. In terms of computation expense, the computationally cheaper POP and IIS provide an acceptable first-order estimate of the power factor of these materials, while the non-polar contributions, which require more expensive ab initio calculations, could be of secondary importance.

cond-mat.mtrl-sci↗

arXiv2025

Thermoelectric transport and the role of different scattering processes in the half-Heusler NbFeSb

We perform an ab initio computational investigation of the electronic and thermoelectric transport properties of one of the best performance half-Heusler (HH) alloys, NbFeSb. We use Boltzmann Transport equation while taking into account the full energy/momentum/band dependence of all relevant electronic scattering rates, i.e. with acoustic phonons, non-polar optical phonons (intra- and inter-valley), polar optical phonons (POP), and ionized impurity scattering (IIS). We use a highly efficient and accurate computational approach, where the scattering rates are derived using only a few ab initio extracted matrix elements, while we account fully for intra-/inter valley/band transitions, screening from both electrons and holes, and bipolar transport effects. Our computed thermoelectric power-factor (PF) values show good agreement with experiments across densities and temperatures, while they indicate the upper limit of PF performance for this material. We show that the polar optical phonon and ionized impurity scattering (importantly including screening), influence significantly the transport properties, whereas the computationally expensive non-polar phonon scattering part (acoustic and non-polar optical) is somewhat weaker, especially for electrons, and at lower to intermediate temperatures. This insight is relevant in the study of half-Heusler and other polar thermoelectric materials in general. Although we use NbFeSb as an example, the method we employ is material agnostic and can be broadly applied efficiently for electronic and thermoelectric materials in general, with more than 10x reduction in computational cost compared to fully ab initio methods, while retaining ab-initio accuracy.

cond-mat.mtrl-sci↗

arXiv2024

Cu$_2$ZnSiTe$_4$: A potential thermoelectric material with promising electronic transport

Transition metal-based quaternary chalcogenides have gathered immense attention for various renewable energy applications including thermoelectrics (TE). While low-symmetry and complex structure help to achieve low thermal conductivity, the TE power factor and hence the figure of merit (ZT) remains low which hinders to promote these class of materials for future TE applications. Here, we investigated the TE properties of a new system, Cu$_2$ZnSiTe$_4$, with improved electronic transport using first-principles calculation. The presence of heavy chalcogen like Te, helps to achieve a relatively low bandgap (0.58 eV). This, together with unique electronic band topology, leads to a promising value of power-factor of 3.95(n-type) and 3.06(p-type) mWm$^{-1}$K$^{-2}$ at 900 K. Te atoms also play a crucial role in mixing the optical and acoustic phonon branches which, in turn, are responsible for reduced lattice thermal conductivity ($\sim$0.7 Wm$^{-1}$K$^{-1}$ at high temperature). Though the thermal conductivity is not appreciably low, the electronic transport properties (power factor) are quite favorable to yield promising TE figure of merit (ZT $\sim$2.67 (n-type) and $\sim$2.11 (p-type) at 900 K). We propose Cu$_2$ZnSiTe$_4$ to be a potential candidate for TE applications, and believe to attract future experimental/theoretical studies.

cond-mat.mtrl-sci↗

arXiv2023

Double Half-Heusler Alloys X$_2$Ni$_2$InSb (X= Zr/Hf) with promising Thermoelectric Performance: Role of varying structural phases

Double half-heusler alloys are the new class of compounds which can be seen as transmuted version of two single half-heusler with higher flexibility of tuning their properties. Here, we report a detailed study of thermoelectric (TE) properties of two double half-heusler (HH) alloys X$_2$Ni$_2$InSb (X=Hf/Zr), using first-principles calculation. These alloys exhibit a rich phase diagram with the possibility of tetragonal, cubic and solid solution phase at different temperature range. As such, a comparative study of TE properties of all these phases is performed. The ordered phases show quite favorable electronic transport as compared to the disordered ones in both compounds. Lattice thermal conductivity of double HH alloys is lower than their ternary counter-part, making them most promising for TE application. Simulated band gap, obtained using hybrid functional, of ordered phases of Hf$_2$Ni$_2$InSb and Zr$_2$Ni$_2$InSb lie in the range 0.24-0.4 eV and 0.17-0.59 eV respectively, while for disordered phase, it is 0.05- 0.06 eV. Hf$_2$Ni$_2$InSb shows a reasonably high ZT value of $\sim$ 2.19, while Zr$_2$Ni$_2$InSb yields 2.46 at high temperature for n-type conduction in tetragonal phase. The ZT value for p-type conduction is also quite promising ($\sim$ 1.35 and $\sim$ 2.19 for Hf- and Zr-based compounds). In both the compounds, electronic transport (Seebeck and electrical conductivity) plays the dominant role for the high ZT-value. Keeping in mind the promising TE performance, we propose immediate attention from experimentalists to synthesize and cross validate our findings for these new candidate materials.

cond-mat.mtrl-sci↗

arXiv2021

CoFeVSb: A Promising Candidate for Spin Valve and Thermoelectric Applications

We report a combined theoretical and experimental study of a novel quaternary Heusler system CoFeVSb from the view point of room temperature spintronics and thermoelectric applications. It crystallizes in cubic structure with small DO$_3$-type disorder. The presence of disorder is confirmed by room temperature synchrotron X-ray diffraction(XRD) and extended X-ray absorption fine structure (EXAFS) measurements. Magnetization data reveal high ordering temperature with a saturation magnetization of 2.2 $μ_B$/f.u. Resistivity measurements reflect half-metallic nature. Double hysteresis loop along with asymmetry in the magnetoresistance(MR) data reveals room temperature spin-valve feature, which remains stable even at 300 K. Hall measurements show anomalous behavior with significant contribution from intrinsic Berry phase. This compound also large room temperature power factor ($\sim0.62$ mWatt/m/K$^{2}$) and ultra low lattice thermal conductivity ($\sim0.4$ W/m/K), making it a promising candidate for thermoelectric application. Ab-initio calculations suggest weak half-metallic behavior and reduced magnetization (in agreement with experiment) in presence of DO$_3$ disorder. We have also found an energetically competing ferromagnetic FM)/antiferromagnetic (AFM) interface structure within an otherwise FM matrix: one of the prerequisites for spin valve behavior. Coexistence of so many promising features in a single system is rare, and hence CoFeVSb gives a fertile platform to explore numerous applications in future.

cond-mat.mtrl-sci↗

arXiv2021

Intra-unitcell cluster-cluster magnetic compensation and large exchange bias in cubic alloys

Composite quantum materials are the ideal examples of multifunctional systems which simultaneously host more than one novel quantum phenomenon in physics. Here, we present a combined theoretical and experimental study to demonstrate the presence of an extremely large exchange bias in the range 0.8 T - 2.7 T and a fully compensated magnetic state (FCF) in a special type of Pt and Ni doped Mn$_3$In cubic alloy. Here, oppositely aligned uncompensated moments in two different atomic clusters sum up to zero which are responsible for the FCF state. Our Density functional theory (DFT) calculations show the existence of several possible ferrimagnetic configurations with the FCF as the energetically most stable one. The microscopic origin of the large exchange bias can be interpreted in terms of the exchange interaction between the FCF background and the uncompensated ferrimagnetic clusters stabilized due to its negligible energy difference with respect to the FCF phase. We utilize pulsed magnetic field up to 60 T and 30 T static field magnetization measurements to confirm the intrinsic nature of exchange bias in our system. Finally, our Hall effect measurements demonstrate the importance of uncompensated noncoplanar interfacial moments for the realization of large EB. The present finding of gigantic exchange bias in a unique compensated ferrimagnetic system opens up a direction for the design of novel quantum phenomena for the technological applications.

cond-mat.mtrl-sci↗

arXiv2019

Accurate high-throughput screening of I-II-V 8-electron Half-Heusler compounds for renewable-energy applications

Renewable energy resources have emerged as the best alternatives to fossil fuel energy which are rapidly declining with time. Here, eight valence-electron count Half-Heusler(HH) alloys have been studied using reliable first principles calculations in the search of potential candidates for renewable energy applications like thermoelectric (TE), solar harvesting, topological insulator (TI) and transparent conductor (TC) applications. The initial screening parameters used for our study are chemical and thermal stability, band gap, nature of bandgap and band inversion strength. We have performed quasistatic G0W0 calculation starting from HSE groundstate wavefunction to predict the most accurate estimation of bandgap for these class of compounds. A total of 960 compounds were simulated. 121 out of 960 compounds were found to be thermally and chemically stable. 31 compounds with bandgap less than 1.5 eV were studied for thermoelectric application out of which 13 compounds were found to show thermoelectric figure of merit ZT > 0.7 for both p-type and n-type conduction. 30 compounds with band gap 1-1.8 eV were studied for optoelectronic application out of which 13 compounds were found to show Spectroscopic Limited Maximum Efficiency (SLME) more than 20%, comparable to existing state of the art materials. 21 compounds were found to show band inversion at ambient conditions which is a necessary condition for topological insulators. The surface band structure calculations for one of the promising candidate was done to check robustness of the topological behaviour. 29 compounds were found to have bandgap more than 2 eV which are promoted for transparent conductor applications with further band engineering. We strongly believe that our calculations will give useful insights to experimentalists for synthesizing and investigating proposed compounds for different energy applications.

cond-mat.mtrl-sci↗