arXiv subjects

Bianca Scaparra

Publications and source records attributed to Bianca Scaparra.

8 recordsLinked to original sources

arXiv2026

Industry-ready spin-photon interfaces for hybrid photonic quantum computing

Hybrid photonic quantum computers, combining stationary matter qubits and flying photonic qubits, offer an intrinsically networked and resource-efficient route to large-scale, error-corrected quantum computation. Their core components are cavity-coupled matter qubits that act as light--matter interfaces, enabling: high-efficiency on-demand single-photon generation, stable near-unity photon indistinguishability and spin--multi-photon entanglement. Semiconductor quantum dots in microcavities are a leading platform for realizing such devices. Yet reaching the performance, reproducibility and spin-coherence thresholds for large-scale error correction remains a major challenge requiring industrial fabrication and control. Here we report thousands of monolithic semiconductor quantum-dot devices fabricated using a III--V pilot production-line process compatible with large-scale deployment. Systematic control of source parameters yields state-of-the-art efficiency and supports a path to optical losses below fault-tolerance thresholds. Using field-quadrature state reconstruction as a stringent joint test of efficiency and indistinguishability, we observe near-unity photon quantum purity stable over tens of minutes and a record single-photon Wigner-function negativity. We further demonstrate seven-partite spin--multi-photon entanglement and spin coherence extendable to microsecond timescales in the low-magnetic-field regime. Finally, photons from distant sources are as indistinguishable as photons emitted successively by a single source. These results establish foundry-compatible III--V quantum dots as a scalable platform for hybrid photonic quantum computing.

quant-ph↗

arXiv2026

Molecular beam epitaxy of wafer-scale O-band InAs/InGaAs quantum dots on GaAs for quantum photonics

We report a scalable molecular beam epitaxy strategy to achieve a low density of O-band electrically tunable InAs/InGaAs quantum dots (QDs) on GaAs(001) substrates. Our approach is based on a gradient deposition of InAs in the sub-ML regime and subsequent capping with an InGaA strain-reducing layer to redshift the emission wavelength. For different growth conditions, we investigate the optical properties of the dots using photoluminescence mapping and correlate with structural properties determined by scanning transmission electron microscopy. Using a surface roughness modulation technique and synchronizing InAs sub-monolayer deposition cycles with substrate rotation, we control the dot density and position low-density regions (< 1 QD per um^2) on the substrate. Hyperspectral imaging is used to map the spatial and spectral characteristics of many individual dots in the low-density region, confirming that our approach is universally applicable to conventional MBE growth on (001) surfaces. Finally, we tune the QD emission wavelength within the O-band using electric fields and demonstrate single-photon emission with g(2)(0) = 0.020(14).

cond-mat.mtrl-sci↗

arXiv2025

Single-Photon Detection in Few-Layer NbSe$_2$ Superconducting Nanowires

Superconducting Nanowire Single-Photon Detectors (SNSPDs) are key building blocks for photonic quantum technologies due to their ability to detect single photons with ultra-high efficiency, low dark counts and fast temporal resolution. Superconducting materials exhibiting high uniformity, large absorption cross-section and atomic-scale thickness are desirable to extend single-photon detection from the near-infrared up to the terahertz regime, where existing material choices are especially constrained. Substrate independence would further open the way to integrate detectors onto functional materials and heterostructures, enhancing performance and enabling proximal read-out of a wide range of individual excitations. Here, we top-down shape the prototypical two-dimensional superconductor niobium diselenide (NbSe$_2$) into few-layer nanowires less than 100 nm wide and demonstrate single-photon detection at 780 and 1550 nm. At the same time, the dark-count rate remains below 1 Hz up to the switching current and we achieve a timing jitter below 50 ps. We use a diffusive hot-spot model to estimate a theoretical cut-off wavelength that surpasses the millimetre range. Our results open up routes toward quantum limited detectors integrated into quantum-photonic circuits and quantum devices, with the potential for novel detection capabilities and unprecedented energy sensitivity.

cond-mat.supr-con↗

arXiv2025

Telecom quantum dots on GaAs substrates as integration-ready high performance single-photon sources

The development of deterministic single photon sources emitting in the telecommunication bands is a key challenge for quantum communication and photonic quantum computing. Here, we investigate the optical properties and single-photon emission of molecular beam epitaxy grown semiconductor quantum dots emitting in the telecom O- and C- bands. The quantum dots are embedded in a InGaAs matrix with fixed indium content grown on top of a compositionally graded InGaAs buffer. This structure allows for the future implementation of electrically contacted nanocavities to enable high-quality and bright QD emission. In detailed optical characterizations we observe linewidths as low as $ 50 \mu$eV, close to the spectrometer resolution limit, low fine structure splittings close to $ 10 \mu$eV, and $g^{(2)} (0)$ values as low as $0.08$. These results advance the current performance metrics for MBE-grown quantum dots on GaAs substrates emitting in the telecom bands and showcase the potential of the presented heterostructures for further integration into photonic devices.

cond-mat.mes-hall↗

arXiv2024

MBE-grown virtual substrates for quantum dots emitting in the telecom O- and C-bands

InAs semiconductor quantum dots (QDs) emitting in the near infrared are promising platforms for on-demand single-photon sources and spin-photon interfaces. However, the realization of quantum-photonic nanodevices emitting in the second and third telecom windows with similar performance remains an open challenge. Here, we report an optimized heterostructure design for QDs emitting in the O- and C-bands grown by means of molecular beam epitaxy. The InAs QDs are grown on compositionally graded InGaAs buffers, which act as virtual substrates, and are embedded in mostly relaxed active regions. Reciprocal space maps of the indium profiles and optical absorption spectra are used to optimize In0.22Ga0.78As and In0.30Ga0.70As active regions, accounting for the chosen indium grading profile. This approach results in a tunable QD photoluminescence (PL) emission from 1200 up to 1600 nm. Power and polarization dependent micro-PL measurements performed at 4 K reveal exciton-biexciton complexes from quantum dots emitting in the telecom O- and C-bands. The presented study establishes a flexible platform that can be an essential component for advanced photonic devices based on InAs/GaAs that serve as building blocks for future quantum networks.

cond-mat.mes-hall↗

arXiv2023

Three-photon excitation of quantum two-level systems

We demonstrate that semiconductor quantum dots can be excited efficiently in a resonant three-photon process, whilst resonant two-photon excitation is highly suppressed. Time-dependent Floquet theory is used to quantify the strength of the multi-photon processes and model the experimental results. The efficiency of these transitions can be drawn directly from parity considerations in the electron and hole wavefunctions in semiconductor quantum dots. Finally, we exploit this technique to probe intrinsic properties of InGaN quantum dots. In contrast to non-resonant excitation, slow relaxation of charge carriers is avoided which allows us to measure directly the radiative lifetime of the lowest energy exciton states. Since the emission energy is detuned far from the resonant driving laser field, polarization filtering is not required and emission with a greater degree of linear polarization is observed compared to non-resonant excitation.

quant-ph↗

arXiv2022

Coherent Dynamics of the Swing-Up Excitation Technique

Developing coherent excitation methods for quantum emitters which enable high brightness, good single-photon purity and high indistinguishability of the emitted photons has been a key challenge in the past years. While many methods have been proposed and explored, they all have specific advantages and disadvantages. In this letter, we investigate the dynamics of the recent swing-up scheme as an excitation method for a two-level system and its performance in single-photon generation. By applying two far red-detuned laser pulses, the two-level system can be prepared in the excited state with near-unity fidelity. We demonstrate the successful functionality and the coherent character of this technique using semiconductor quantum dots. Moreover, we explore the multi-dimensional parameter space of the two laser pulses to study the impact on the excitation fidelity. Finally, we investigate the performance of the scheme as an excitation method for generation of high-quality single photons. We find that the swing-up scheme itself works well and exhibits nearly perfect single-photon purity, while the observed indistinguishability in our sample is limited by the influence of the inevitable high excitation powers on the semiconductor environment of the quantum dot.

quant-ph↗

arXiv2021

Stimulated generation of indistinguishable single photons from a quantum ladder system

We propose a scheme for the generation of highly indistinguishable single photons using semiconductor quantum dots and demonstrate its performance and potential. The scheme is based on the resonant two-photon excitation of the biexciton followed by stimulation of the biexciton to selectively prepare an exciton. Quantum-optical simulations and experiments are in good agreement and show that the scheme provides significant advantages over previously demonstrated excitation methods. The two-photon excitation of the biexciton suppresses re-excitation and enables ultra-low multi-photon errors, while the precisely timed stimulation pulse results in very low timing jitter of the photons, and consequently, high indistinguishability. Since both control laser fields are detuned from the emission energy, the scheme does not require polarization filtering, facilitating high brightness approaching unity. Moreover, the polarization of the emitted single photons is controlled by the stimulation laser field, such that the polarization of the quantum light is deterministically programmable.

cond-mat.mes-hall↗