arXiv subjects

Binbin Wang

Publications and source records attributed to Binbin Wang.

32 records · Page 2Linked to original sources

arXiv2022

Magnetic-field modulation of topological electronic states and emergent magneto-transport in a magnetic Weyl semimetal

The modulation of topological electronic states by an external magnetic field is highly desired for condensed matter physics. Schemes to achieve this have been proposed theoretically, but few can be realized experimentally. Here, combining transverse transport, theoretical calculations, and scanning tunneling microscopy/spectroscopy (STM/S) investigations, we provide an observation that the topological electronic states, accompanied by an emergent magneto-transport phenomenon, were modulated by applying magnetic fields through induced non-collinear magnetism in the magnetic Weyl semimetal EuB6. A giant unconventional anomalous Hall effect (UAHE) is found during the magnetisation re-orientation from easy axis to hard ones in magnetic fields, with a UAHE peak around the low field of 5 kOe. Under the reasonable spin-canting effect, the folding of the topological anti-crossing bands occurs, generating a strong Berry curvature that accounts for the observed UAHE. Field-dependent STM/S reveals a highly synchronous evolution of electronic density of states, with a dI/dV peak around the same field of 5 kOe, which provides evidence to the folded bands and excited UAHE by external magnetic fields. This finding elucidates the connection between the real-space non-collinear magnetism and the k-space topological electronic states and establishes a novel manner to engineer the magneto-transport behaviours of correlated electrons for future topological spintronics.

cond-mat.mtrl-sci↗

arXiv2022

Scaling of Berry-curvature monopole dominated large linear positive magnetoresistance

The linear positive magnetoresistance (LPMR) is a widely observed phenomenon in topological materials, which is promising for potential applications on topological spintronics. However, its mechanism remains ambiguous yet and the effect is thus uncontrollable. Here, we report a quantitative scaling model that correlates the LPMR with the Berry curvature, based on a ferromagnetic Weyl semimetal CoS2 that bears the largest LPMR of over 500% at 2 Kelvin and 9 Tesla, among known magnetic topological semimetals. In this system, masses of Weyl nodes existing near the Fermi level, revealed by theoretical calculations, serve as Berry-curvature monopoles and low-effective-mass carriers. Based on the Weyl picture, we propose a relation \[\text{MR}=\frac{e}{\hbar }B{{Ω}_{\text{F}}}\], with B being the applied magnetic field and \[{{Ω}_{\text{F}}}\] the average Berry curvature near the Fermi surface, and further introduce temperature factor to both MR/B slope (MR per unit field) and anomalous Hall conductivity, which establishes the connection between the model and experimental measurements. A clear picture of the linearly slowing down of carriers, i.e., the LPMR effect, is demonstrated under the cooperation of the k-space Berry curvature and real-space magnetic field. Our study not only provides an experimental evidence of Berry curvature induced LPMR for the first time, but also promotes the common understanding and functional designing of the large Berry-curvature MR in topological Dirac/Weyl systems for magnetic sensing or information storage.

cond-mat.mtrl-sci↗

arXiv2022

High-efficiency second-harmonic and sum-frequency generation in a silicon nitride microring integrated with few-layer GaSe

Silicon nitride (SiN) photonics platform has attributes of ultra-low linear and nonlinear propagation losses and CMOS-compatible fabrication process, promising large-scale multifunctional photonic circuits. However, the centrosymmetric nature of SiN inhibits second-order nonlinear optical responses in its photonics platform, which is desirable for developing efficient nonlinear active devices. Here, we demonstrate high-efficiency second-order nonlinear processes in SiN photonics platform by integrating a few-layer GaSe flake on a SiN microring resonator. With the pump of microwatts continuous-wave lasers, second-harmonic generation and sum-frequency generation with the conversion efficiencies of 849%/W and 123%/W, respectively, are achieved, which benefit from the ultrahigh second-order nonlinear susceptibility of GaSe, resonance enhanced GaSe-light interaction, and phase-matching condition satisfied by the mode engineering. Combining with the easy integration, the GaSe-assisted high-efficiency second-order nonlinear processes offer a new route to enriching already strong functionality of SiN photonics platform in nonlinear optics.

physics.optics↗

arXiv2022

Observation of Γ-valley moiré bands and emergent hexagonal lattice in twisted transition metal dichalcogenides

Twisted van der Waals heterostructures have recently been proposed as a condensed-matter platform for realizing controllable quantum models due to the low-energy moiré bands with specific charge distributions in moiré superlattices. Here, combining angle-resolved photoemission spectroscopy with sub-micron spatial resolution (μ-ARPES) and scanning tunneling microscopy (STM), we performed a systematic investigation on the electronic structure of 5.1° twisted bilayer WSe2 that hosts correlated insulating and zero-resistance states. Interestingly, contrary to one's expectation, moiré bands were observed only at Γ-valley but not K-valley in μ-ARPES measurements; and correspondingly, our STM measurements clearly identified the real-space honeycomb- and Kagome-shaped charge distributions at the moiré length scale associated with the Γ-valley moiré bands. These results not only reveal the unsual valley dependent moiré-modified electronic structure in twisted transition metal dichalcogenides, but also highlight the Γ-valley moiré bands as a promising platform for exploring strongly correlated physics in emergent honeycomb and Kagome lattices at different energy scales.

cond-mat.str-el↗

arXiv2022

Evidences for the exciton gas phase and its condensation in monolayer 1T-ZrTe2

The excitonic insulator (EI) is a Bose-Einstein condensation (BEC) of excitons bound by electron-hole interaction in a solid, which could support high-temperature BEC transition. The material realization of EI has been elusive, which is further challenged by the difficulty of distinguishing it from a conventional charge density wave (CDW) state. In the BEC limit, the pre-condensation exciton gas phase is a hallmark to distinguish EI from conventional CDW, yet direct experimental evidence has been lacking. Here we report a distinct correlated phase beyond the $2\times2$ CDW ground state emerging in epitaxially grown monolayer 1T-ZrTe2 and its investigation by angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy (STM). The results show novel band- and energy-dependent folding behavior in a two-step process, evidenced by an exciton gas phase prior to its condensation into the final CDW state. The excellent agreement between experiments and theoretical predictions on the recovery of the pristine band structure by carrier-density-dependent suppression of the CDW state further corroborates the monolayer 1T-ZrTe2 as an EI. Our findings provide a versatile two-dimensional platform that allows tuning of the excitonic effect.

cond-mat.mtrl-sci↗

arXiv2022

Atomic Layer Epitaxy of Kagome Magnet Fe${_3}$Sn${_2}$ and Sn-modulated Heterostructures

Magnetic materials with kagome crystal structure exhibit rich physics such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or polycrystalline films. Here we report the atomic layer molecular beam epitaxy synthesis of high-quality thin films of topological kagome magnet Fe${_3}$Sn${_2}$. Structural and magnetic characterization of Fe${_3}$Sn${_2}$ on epitaxial Pt(111) identifies highly ordered films with c-plane orientation and an in-plane magnetic easy axis. Studies of the local magnetic structure by anomalous Nernst effect imaging reveals in-plane oriented micrometer size domains. Superlattice structures consisting of Fe${_3}$Sn${_2}$ and Fe${_3}$Sn are also synthesized by atomic layer molecular beam epitaxy, demonstrating the ability to modulate the sample structure at the atomic level. The realization of high-quality films by atomic layer molecular beam epitaxy opens the door to explore the rich physics of this system and investigate novel spintronic phenomena by interfacing Fe${_3}$Sn${_2}$ with other materials.

cond-mat.mtrl-sci↗

arXiv2021

Exciting Magnetic Dipole Mode of Split Ring Plasmonic Nano Resonator by Photonic Crystal Nanocavity

On chip exciting electric modes in individual plasmonic nanostructures are realized widely; nevertheless, the excitation of their magnetic counterparts is seldom reported. Here, we propose a highly efficient on chip excitation approach of the magnetic dipole mode of an individual split ring resonator (SRR) by integrating it onto a photonic crystal nanocavity (PCNC). A high excitation efficiency of up to 58% is realized through the resonant coupling between the modes of the SRR and PCNC. A further fine adjustment of the excited magnetic dipole mode is demonstrated by tuning the relative position and twist angle between the SRR and PCNC. Finally, a structure with a photonic crystal waveguide side coupled with the hybrid SRR PCNC is illustrated, which could excite the magnetic dipole mode with an in plane coupling geometry and potentially facilitate the future device application. Our result may open a way for developing chip integrated photonic devices employing a magnetic field component in the optical field.

physics.optics↗

arXiv2021

Weak Antilocalization Effect up to ~ 120 K in the van der Waals Crystal Fe5-xGeTe2 with Near Room Temperature Ferromagnetism

The weak antilocalization (WAL) effect is known as a quantum correction to the classical conductivity, which never appeared in two-dimensional magnets. In this work, we reported the observation of a WAL effect in the van der Waals ferromagnet Fe5-xGeTe2 with a Curie temperature Tc ~ 270 K, which can even reach as high as ~ 120 K. The WAL effect could be well described by the Hikami-Larkin-Nagaoka and Maekawa-Fukuyama theories in the presence of strong spin-orbit coupling (SOC). Moreover, A crossover from a peak to dip behavior around 60 K in both the magnetoresistance and magnetoconductance was observed, which could be ascribed to a rare example of temperature driven Lifshitz transition as indicated by the angle-resolved photoemission spectroscopy measurements and first principles calculations. The reflective magnetic circular dichroism measurements indicate a possible spin reorientation that kills the WAL effect above 120 K. Our findings present a rare example of WAL effect in two-dimensional ferromagnet and also a magnetotransport fingerprint of the strong SOC in Fe5-xGeTe2. The results would be instructive for understanding the interaction Hamiltonian for such high Tc itinerant ferromagnetism as well as be helpful for the design of next-generation room temperature spintronic or twistronic devices.

cond-mat.mtrl-sci↗

arXiv2021

Fano resonance from a one-dimensional topological photonic crystal

An ultra-compact one-dimensional topological photonic crystal (1D-TPC) is designed in a single mode silicon bus-waveguide to generate Fano resonance lineshape. The Fano resonance comes from the interference between the discrete topological boundary state of the 1D-TPC and the continuum high-order leaky mode of the bus-waveguide. Standalone asymmetric Fano resonance lineshapes are obtained experimentally in the waveguide transmission spectrum with a maximum extinction ratio of 33 dB and a slope ratio of 10 dB/nm over a broadband flat background.

physics.optics↗

arXiv2020

Reduced lasing thresholds in GeSn microdisk cavities with defect management of the optically active region

GeSn alloys are nowadays considered as the most promising materials to build Group IV laser sources on silicon (Si) in a full complementary metal oxide semiconductor-compatible approach. Recent GeSn laser developments rely on increasing the band structure directness, by increasing the Sn content in thick GeSn layers grown on germanium (Ge) virtual substrates (VS) on Si. These lasers nonetheless suffer from a lack of defect management and from high threshold densities. In this work we examine the lasing characteristics of GeSn alloys with Sn contents ranging from 7 \% to 10.5 \%. The GeSn layers were patterned into suspended microdisk cavities with different diameters in the 4-\SI{8 }{\micro\meter} range. We evidence direct band gap in GeSn with 7 \% of Sn and lasing at 2-\SI{2.3 }{\micro\meter} wavelength under optical injection with reproducible lasing thresholds around \SI{10 }{\kilo\watt\per\square\centi\meter}, lower by one order of magnitude as compared to the literature. These results were obtained after the removal of the dense array of misfit dislocations in the active region of the GeSn microdisk cavities. The results offer new perspectives for future designs of GeSn-based laser sources.

physics.optics↗

arXiv2020

Interlayer Decoupling in 30° Twisted Bilayer Graphene Quasicrystal

Stacking order has strong influence on the coupling between the two layers of twisted bilayer graphene (BLG), which in turn determines its physical properties. Here, we report the investigation of the interlayer coupling of the epitaxially grown single-crystal 30° twisted BLG on Cu(111) at the atomic scale. The stacking order and morphology of BLG is controlled by a rationally designed two-step growth process, that is, the thermodynamically controlled nucleation and kinetically controlled growth. The crystal structure of the 30°-twisted bilayer graphene (30°-tBLG) is determined to have the quasicrystal like symmetry. The electronic properties and interlayer coupling of the 30°-tBLG is investigated using scanning tunneling microscopy (STM) and spectroscopy (STS). The energy-dependent local density of states (DOS) with in-situ electrostatic doping shows that the electronic states in two graphene layers are decoupled near the Dirac point. A linear dispersion originated from the constituent graphene monolayers is discovered with doubled degeneracy. This study contributes to controlled growth of twist-angle-defined BLG, and provides insights of the electronic properties and interlayer coupling in this intriguing system.

cond-mat.mes-hall↗

arXiv2020

Electromagnetically Induced Transparency of Interacting Rydberg Atoms with Two-Body dephasing

We study electromagnetically induced transparency of a ladder type configuration in ultracold atomic gases, where the upper level is an electronically highly excited Rydberg state. The strong two-body interaction in the Rydberg state leads to the excitation blockade, where all but one atoms are shifted out of resonance such that the transmission of the probe light is affected. We show that molecular coupling in the Rydberg state causes an effective, two-body dephasing. The presence of the two-body dephasing leads to a similar blockade effect. Hence the overall blockade effect is enhanced by the two-body dephasing. Through numerical and approximately analytical calculations, we find that the transmission is reduced drastically by the presence of two-body dephasing in the transparent window, which is accompanied by strong photon-photon anti-bunching. Around the Autler-Townes splitting, the photon bunching is amplified by the two-body dephasing.

physics.optics↗

arXiv2019

Isotropic charge screening of the anisotropic black phosphorus revealed by potassium adatoms

Black phosphorus has attracted great research interest due to its numerous applications in electronic devices, optoelectronic devices, energy storages and so on. Compared with the majority of two-dimensional materials, black phosphorus possesses a unique property, i.e. the strong in-plane anisotropy. All the properties reported so far, including its effective mass, electron mobility, light absorption, thermal conductivity and so on, have shown great anisotropy in the basal plane. This property renders black phosphorus unique applications not achievable with other two-dimensional materials. In this work, however, we discover a remarkable isotropic behavior in the strongly anisotropic black phosphorus, i.e. its electrostatic screening of point charges. We use the tip-induced band bending of a scanning tunneling microscope to map out the Coulomb field of ionized potassium adatoms on black phosphorus, and reveal its isotropic charge screening. This discovery is important for understanding electron scattering and transport in black phosphorus.

cond-mat.mes-hall↗

arXiv2005

Evolving Networks and Birth-and-Death Processes

Using a simple model with link removals as well as link additions, we show that an evolving network is scale free with a degree exponent in the range of (2, 4]. We then establish a relation between the network evolution and a set of non-homogeneous birth-and-death processes, and, with which, we capture the process by which the network connectivity evolves. We develop an effective algorithm to compute the network degree distribution accurately. Comparing analytical and numerical results with simulation, we identify some interesting network properties and verify the effectiveness of our method.

math-ph↗