arXiv subjects

Bingbing Tong

Publications and source records attributed to Bingbing Tong.

At least 37 records · Page 2Linked to original sources

arXiv2025

Measurement of parity-dependent energy-phase relation of the low-energy states in a potential artificial Kitaev chain utilizing a transmon qubit

Artificial Kitaev chains have emerged as a promising platform for realizing topological quantum computing. Once the chains are formed and the Majorana zero modes are braided/fused, reading out the parity of the chains is essential for further verifying the non-Abelian property of the Majorana zero modes. Here we demonstrate the feasibility of using a superconducting transmon qubit, which incorporates an end of a four-site quantum dot-superconductor chain based on a Ge/Si nanowire, to directly detect the singlet/doublet state, and thus the parity of the entire chain. We also demonstrate that for multiple-dot chains there are two types of 0-π transitions between different charging states: the parity-flip 0-π transition and the parity-preserved 0-π transition. Furthermore, we show that the inter-dot coupling, hence the strengths of cross Andreev reflection and elastic cotunneling of electrons, can be adjusted by local electrostatic gating in chains fabricated on Ge/Si core-shell nanowires. Our exploration would be helpful for the ultimate realization of topological quantum computing based on artificial Kitaev chains.

cond-mat.mes-hall↗

arXiv2025

Controllable creation of topological boundary states in topological-insulator-based Josephson corner junctions

Majorana zero modes (MZMs) in condensed matter systems have attracted great attention in the past two decades, due to their interesting physics and potential application in topological quantum computing (TQC). However, the topologically protected nature of MZMs still need more experimental verifications. In this study, we have realized controllable creation of a topological boundary state at the corner of topological insulator (TI)-based Josephson corner junctions. This state demonstrates protected existence across a broad region in parametric space, and exhibits a non-2π-period but 4π-period-compatible energy-phase relation. Our study suggests that TI-based Josephson junctions, as proposed in the Fu-Kane scheme of TQC, may provide a promising platform for hosting and braiding MZMs.

cond-mat.mes-hall↗

arXiv2025

Electrical switching of Chern insulators in moire rhombohedral heptalayer graphene

In orbital Chern insulators, the chemical potential acts as a tuning knob to reverse chirality in dissipationless edge currents, enabling electric-field control of magnetic order-key for future quantum electronics. Despite the rise of orbital Chern insulators, electrically switchable quantum anomalous Hall effect (QAHE) remains rare, necessitating further investigation. Here, we demonstrate electric-field-induced reversal of orbital Chern insulators in a moire superlattice composed of rhombohedral heptalayer graphene (r-7LG) aligned with hexagonal boron nitride. At one electron per moire unit cell, two emerging Chern insulating phases - one pointing away from and the other toward graphene's charge neutrality point in the phase diagram of carrier density (n) versus magnetic field (B) - exhibit energetic competition modulated by both n and B. This switchable QAHE chirality in r-7LG demonstrates a layer-number dependent response: similar phenomena in moire r-6LG require much higher magnetic fields and are absent in thinner rhombohedral graphene. Our findings establish moire-engineered rhombohedral graphene as a promising platform for exploring topological quantum materials with electrically controllable chiral edge modes and magnetic order.

cond-mat.mes-hall↗

arXiv2025

Observation of topological Anderson Chern insulator phase in MnBi$_4$Te$_7$ monolayer

The correlation of topology and disorder has attracted great intention due to appropriate disorder could induce the phase transition between trivial and nontrivial topological states. While it is widely recognized that strong disorder can produce rich phase diagrams in topological nontrivial states, moderate disorder has been proposed to induce transitions into topologically nontrivial phases counter-intuitively, leading to the concept of topological Anderson insulators. This phenomenon has been theoretically explored and simulated in various systems, yet experimental realization in solid state systems has remained elusive due to challenges in controlling disorder. Here, we report the experimental observation of Chern insulator state signed by the coexistence of quantized Hall plateau and zero longitudinal resistance in monolayer MnBi$_4$Te$_7$ Hall bar device, which originally hosts a trivial insulating state with Chern number $C$ = 0 in clean limit. We demonstrate that the observed trivial to nontrivial transition in this monolayer device can be attributed to disorder, evidenced by universal conductance fluctuations. Our findings substantiate the existence of a long-sought topological Anderson Chern insulator in real materials, a unique variant of the topological Anderson insulator characterized by broken time-reversal-symmetry.

cond-mat.mes-hall↗

arXiv2024

Interplay between topology and correlations in the second moiré band of twisted bilayer MoTe2

Topological flat bands formed in two-dimensional lattice systems offer unique opportunity to study the fractional phases of matter in the absence of an external magnetic field. Celebrated examples include fractional quantum anomalous Hall (FQAH) effects and fractional topological insulators. Recently, FQAH effects have been experimentally realized in both the twisted bilayer MoTe2 (tMoTe2) system and the rhombohedral stacked multilayer graphene/hBN moiré systems. To date, experimental studies mainly focus on the first moiré flat band, except a very recent work that studied novel transport properties in higher moiré bands of a 2.1° tMoTe2 device. Here, we present the systematical transport study of approximately 3° tMoTe2 devices, especially for the second moiré band. At ν = -2 and -4, time-reversal-symmetric single and double quantum spin Hall states formed, consistent with the previous observation in 2.1° tMoTe2 device. On the other hand, we observed ferromagnetism in the second moiré band, and a Chern insulator state driven by out-of-plane magnetic fields at ν = -3. At ν = -2.2 to -2.7, finite temperature resistivity minimum with 1/T scaling at low temperatures, and large out-of-plane negative magnetoresistance have been observed. Applying out-of-plane electric field can induce quantum phase transitions at both integer and fractional filling factors. Our studies pave the way for realizing tunable topological states and other unexpected magnetic phases beyond the first moiré flat band based on twisted MoTe2 platform.

cond-mat.mes-hall↗

arXiv2024

Versatile Method of Engineering the Band Alignment and the Electron Wavefunction Hybridization of Hybrid Quantum Devices

With the development of quantum technology, hybrid devices that combine superconductors (S) and semiconductors (Sm) have attracted great attention due to the possibility of engineering structures that benefit from the integration of the properties of both materials. However, until now, none of the experiments have reported good control of band alignment at the interface, which determines the strength of S-Sm coupling and the proximitized superconducting gap. Here, we fabricate hybrid devices in a generic way with argon milling to modify the interface while maintaining its high quality. First, after the milling the atomically connected S-Sm interfaces appear, resulting in a large induced gap, as well as the ballistic transport revealed by the multiple Andreev reflections and quantized above-gap conductance plateaus. Second, by comparing transport measurement with Schrödinger-Poisson (SP) calculations, we demonstrate that argon milling is capable of varying the band bending strength in the semiconducting wire as the electrons tend to accumulate on the etched surface for longer milling time. Finally, we perform nonlocal measurements on advanced devices to demonstrate the coexistence and tunability of crossed Andreev reflection (CAR) and elastic co-tunneling (ECT) -- key ingredients for building the prototype setup for realization of Kitaev chain and quantum entanglement probing. Such a versatile method, compatible with the standard fabrication process and accompanied by the well-controlled modification of the interface, will definitely boost the creation of more sophisticated hybrid devices for exploring physics in solid-state systems.

cond-mat.mes-hall↗

arXiv2024

Chern insulator phase realized in dual-gate-tuned MnBi2Te4 thin films grown by molecular beam epitaxy

The intrinsic magnetic order, large topological-magnetic gap and rich topological phases make MnBi2Te4 a wonderful platform to study exotic topological quantum states such as axion insulator and Chern insulator. To realize and manipulate these topological phases in a MnBi2Te4 thin film, precise manipulation of the electric field across the film is essential, which requires a dual-gate structure. In this work, we achieve dual-gate tuning of MnBi2Te4 thin films grown with molecular beam epitaxy on SrTiO3(111) substrates by applying the substrate and an AlOx layer as the gate dielectrics of bottom and top gates, respectively. Under magnetic field of 9T and temperature of 20 mK, the Hall and longitudinal resistivities of the films show inversed gate-voltage dependence, for both top- and bottom-gates, signifying the existence of the dissipationless edge state contributed by Chern insulator phase in the ferromagnetic configuration. The maximum of the Hall resistivity only reaches 0.8 h/e2, even with dual-gate tuning, probably due to the high density of bulk carriers introduced by secondary phases. In the antiferromagnetic state under zero magnetic field, the films show normal insulator behavior. The dual-gated MnBi2Te4 thin films lay the foundation for developing devices based on electrically tunable topological quantum states.

cond-mat.mtrl-sci↗

arXiv2024

Rashba-splitting-induced topological flat band detected by anomalous resistance oscillations beyond the quantum limit in ZrTe$_5$

Topological flat band, on which the kinetic energy of topological electrons is quenched, represents a platform for investigating the topological properties of correlated systems. Recent experimental studies on flattened electronic bands have mainly concentrated on 2-dimensional materials created by van der Waals heterostructure-based engineering. Here, we report the observation of a topological flat band formed by polar-distortion-assisted Rashba splitting in a 3-dimensional Dirac material ZrTe$_5$. The polar distortion and resulting Rashba splitting on the band are directly detected by torque magnetometry and the anomalous Hall effect, respectively. The local symmetry breaking further flattens the band, on which we observe resistance oscillations beyond the quantum limit. These oscillations follow the temperature dependence of the Lifshitz-Kosevich formula but are evenly distributed in B instead of 1/B in high magnetic fields. Furthermore, the cyclotron mass anomalously gets enhanced about 10$^2$ times at field ~20 T. These anomalous properties of oscillations originate from a topological flat band with quenched kinetic energy. The topological flat band, realized by polar-distortion-assisted Rashba splitting in the 3-dimensional Dirac system ZrTe$_5$, signifies an intrinsic platform without invoking moiré or order-stacking engineering, and also opens the door for studying topologically correlated phenomena beyond the dimensionality of two.

cond-mat.mes-hall↗

arXiv2024

Tunable superconductivity in electron- and hole-doped Bernal bilayer graphene

Graphene-based, high quality two-dimensional electronic systems have emerged as a highly tunable platform for studying superconductivity. Specifically, superconductivity has been observed in both electron-doped and hole-doped twisted graphene moire systems, whereas in crystalline graphene systems, superconductivity has so far only been observed in hole-doped rhombohedral trilayer and hole-doped Bernal bilayer graphene (BBG). Recently, enhanced superconductivity has been demonstrated in BBG due to the proximity with a monolayer WSe2. Here, we report the observation of superconductivity and a series of flavor-symmetry-breaking phases in both electron- and hole-doped BBG/WSe2 device by electrostatic doping. The strength of the observed superconductivity is tunable by applied vertical electric fields. The maximum Berezinskii-Kosterlitz-Thouless (BKT) transition temperature for the electron- and hole-doped superconductivity is about 210 mK and 400 mK, respectively. Superconductivities emerge only when applied electric fields drive BBG electron or hole wavefunctions toward the WSe2 layer, underscoring the importance of the WSe2 layer in the observed superconductivity. We find the hole-doped superconductivity violates the Pauli paramagnetic limit, consistent with an Ising-like superconductor. In contrast, the electron-doped superconductivity obeys the Pauli limit, even though the proximity induced Ising spin-orbit coupling is also notable in the conduction band. Our findings highlight the rich physics associated with the conduction band in BBG, paving the way for further studies into the superconducting mechanisms of crystalline graphene and the development of novel superconductor devices based on BBG.

cond-mat.supr-con↗

arXiv2023

Tunable even- and odd-denominator fractional quantum Hall states in trilayer graphene

The fractional quantum Hall (FQH) states are exotic quantum many-body phases whose elementary charged excitations are neither bosons nor fermions but anyons, obeying fractional braiding statistics. While most FQH states are believed to have Abelian anyons, the Moore-Read type states with even denominators, appearing at half filling of a Landau level (LL), are predicted to possess non-Abelian excitations with appealing potentials in topological quantum computation. These states, however, depend sensitively on the orbital contents of the single-particle LL wavefunction and the mixing between different LLs. Although they have been observed in a few materials, their non-Abelian statistics still awaits experimental confirmation. Here we show magnetotransport measurements on Bernal-stacked trilayer graphene (TLG), whose unique multiband structure facilitates the interlaced LL mixing, which can be controlled by external magnetic and displacement fields. We observe a series of robust FQH states including even-denominator ones at filling factors $ν=-9/2$, $-3/2$, $3/2$ and $9/2$. In addition, we are able to finetune the LL mixing and crossings to drive quantum phase transitions of these half-filling states and their neighboring odd-denominator ones, exhibiting a related emerging and waning behavior. Our results establish TLG as a controllable system for tuning the weights of LL orbitals and mixing strength, and a fresh platform to seek for non-Abelian quasi-particles.

cond-mat.mes-hall↗

arXiv2023

Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2

The interplay between strong correlations and topology can lead to the emergence of intriguing quantum states of matter. One well-known example is the fractional quantum Hall effect, where exotic electron fluids with fractionally charged excitations form in partially filled Landau levels. The emergence of topological moiré flat bands provides exciting opportunities to realize the lattice analogs of both the integer and fractional quantum Hall states without the need for an external magnetic field. These states are known as the integer and fractional quantum anomalous Hall (IQAH and FQAH) states. Here, we present direct transport evidence of the existence of both IQAH and FQAH states in twisted bilayer MoTe2 (AA stacked). At zero magnetic field, we observe well-quantized Hall resistance of h/e2 around moiré filling factor ν = -1 (corresponding to one hole per moiré unit cell), and nearly-quantized Hall resistance of 3h/2e2 around ν = -2/3, respectively. Concomitantly, the longitudinal resistance exhibits distinct minima around ν = -1 and -2/3. The application of an electric field induces topological quantum phase transition from the IQAH state to a charge transfer insulator at ν = -1, and from the FQAH state to a generalized Wigner crystal state, further transitioning to a metallic state at ν = -2/3. Our study paves the way for the investigation of fractionally charged excitations and anyonic statistics at zero magnetic field based on semiconductor moiré materials.

cond-mat.mes-hall↗

arXiv2023

Observation of 1D Fermi arc states in Weyl semimetal TaAs

Fermi arcs on Weyl semimetals exhibit many exotic quantum phenomena. Usually considered on atomically-flat surfaces with approximate translation symmetry, Fermi arcs are rooted in peculiar topology of bulk Bloch bands of three-dimensional (3D) crystals. The fundamental question of whether a 1D Fermi arc can be probed remains unanswered. Such answer could significantly broaden potential applications of Weyl semimetals. Here, we report a direct observation of robust edge states on atomic-scale ledges in TaAs using low-temperature scanning tunneling microscopy/spectroscopy. Spectroscopic signatures and theoretical calculations reveal that the 1D Fermi arcs arise from the chiral Weyl points of bulk crystal. The crossover from 2D Fermi arcs to eventual complete localization on 1D edges was arrested experimentally on a sequence of surfaces. Our results demonstrate extreme robustness of the bulk-boundary correspondence, which offers topological protection for Fermi arcs, even in cases in which the boundaries are down to atomic-scale. The persistent 1D Fermi arcs can be profitably exploited in miniaturized quantum devices.

cond-mat.mes-hall↗

arXiv2023

Quantized anomalous Hall resistivity achieved in molecular beam epitaxy-grown MnBi2Te4 thin films

The intrinsic magnetic topological insulator MnBi2Te4 provides a feasible pathway to high temperature quantum anomalous Hall (QAH) effect as well as various novel topological quantum phases. Although quantized transport properties have been observed in exfoliated MnBi2Te4 thin flakes, it remains a big challenge to achieve molecular beam epitaxy (MBE)-grown MnBi2Te4 thin films even close to the quantized regime. In this work, we report the realization of quantized anomalous Hall resistivity in MBE-grown MnBi2Te4 thin films with the chemical potential tuned by both controlled in-situ oxygen exposure and top gating. We find that elongated post-annealing obviously elevates the temperature to achieve quantization of the Hall resistivity, but also increases the residual longitudinal resistivity, indicating a picture of high-quality QAH puddles weakly coupled by tunnel barriers. These results help to clarify the puzzles in previous experimental studies on MnBi2Te4 and to find a way out of the big difficulty in obtaining MnBi2Te4 samples showing quantized transport properties.

cond-mat.mes-hall↗

arXiv2021

Observation of Aharonov-Bohm effect in PbTe nanowire networks

We report phase coherent electron transport in PbTe nanowire networks with a loop geometry. Magneto-conductance shows Aharonov-Bohm (AB) oscillations with periods of $h/e$ and $h/2e$ in flux. The amplitude of $h/2e$ oscillations is enhanced near zero magnetic field, possibly due to interference between time-reversal paths. Temperature dependence of the AB amplitudes suggests a phase coherence length $\sim$ 8 - 12 $μ$m at 50 mK. This length scale is larger than the typical geometry of PbTe-based hybrid semiconductor-superconductor nanowire devices.

cond-mat.mes-hall↗

arXiv2021

Selective area epitaxy of PbTe-Pb hybrid nanowires on a lattice-matched substrate

Topological quantum computing is based on braiding of Majorana zero modes encoding topological qubits. A promising candidate platform for Majorana zero modes is semiconductor-superconductor hybrid nanowires. The realization of topological qubits and braiding operations requires scalable and disorder-free nanowire networks. Selective area growth of in-plane InAs and InSb nanowires, together with shadow-wall growth of superconductor structures, have demonstrated this scalability by achieving various network structures. However, the noticeable lattice mismatch at the nanowire-substrate interface, acting as a disorder source, imposes a serious obstacle along with this roadmap. Here, combining selective area and shadow-wall growth, we demonstrate the fabrication of PbTe-Pb hybrid nanowires - another potentially promising Majorana system - on a nearly perfectly lattice-matched substrate CdTe, all done in one molecular beam epitaxy chamber. Transmission electron microscopy shows the single-crystal nature of the PbTe nanowire and its atomically sharp and clean interfaces to the CdTe substrate and the Pb overlayer, without noticeable inter-diffusion or strain. The nearly ideal interface condition, together with the strong screening of charge impurities due to the large dielectric constant of PbTe, hold promise towards a clean nanowire system to study Majorana zero modes and topological quantum computing.

cond-mat.mes-hall↗

arXiv2017

Three-Dimensional Anisotropic Magnetoresistance in the Dirac Node-Line Material ZrSiSe

The family of materials defined as ZrSiX (X = S, Se, Te) has been established as Dirac node-line semimetals, and subsequent study is urgent to exploit the promising application of unusual magnetoresistance property. In this work, we systematically investigated the anisotropic magnetoresistance in the newly-discovered Dirac node-line material ZrSiSe. By applying a magnetic field of 3 T by a vector field, the three-dimensional (3D) magnetoresistance (MR) shows strong anisotropy. The MR ratio of maximum and minimum directions can reach 7 at 3 T and keeps increasing at the higher magnetic field. The anisotropic MR forms a butterfly-shaped curve, which indicates the quasi-2D electronic structures. This is further confirmed by the angular-dependent Shubnikov-de Haas (SdH) oscillations. The first-principles calculations establish the quasi-2D tubular-shaped Fermi surface near the X point in the Brillouin zone. Our findings shed light on the 3D mapping of MR and the potential applications in magnetic sensors based on ZrSiSe Dirac materials.

cond-mat.mes-hall↗

arXiv2017

Signature of chiral fermion instability in the Weyl semimetal TaAs above the quantum limit

We report the electrical transport properties for Weyl semimetal TaAs in an intense magnetic field. Series of anomalies occur in the longitudinal magnetoresistance and Hall signals at ultra-low temperatures when the Weyl electrons are confined into the lowest Landau level. These strongly temperature-dependent anomalies are ascribed to the electron-hole pairing instability. Our measurements show that the Weyl semimetal TaAs in the ultraquantum regime provides a good platform for studying electron-electron interaction in topological nontrivial semimetals.

cond-mat.mes-hall↗

arXiv2016

Signatures of the Adler-Bell-Jackiw chiral anomaly in a Weyl Fermion semimetal

Weyl semimetals provide the realization of Weyl fermions in solid-state physics. Among all the physical phenomena that are enabled by Weyl semimetals, the chiral anomaly is the most unusual one. Here, we report signatures of the chiral anomaly in the magneto-transport measurements on the first Weyl semimetal TaAs. We show negative magnetoresistance under parallel electric and magnetic fields, that is, unlike most metals whose resistivity increases under an external magnetic field, we observe that our high mobility TaAs samples become more conductive as a magnetic field is applied along the direction of the current for certain ranges of the field strength. We present systematically detailed data and careful analyses, which allow us to exclude other possible origins of the observed negative magnetoresistance. Our transport data, corroborated by photoemission measurements, first-principles calculations and theoretical analyses, collectively demonstrate signatures of the Weyl fermion chiral anomaly in the magneto-transport of TaAs.

cond-mat.mtrl-sci↗