arXiv subjects

Bingcheng Luo

Publications and source records attributed to Bingcheng Luo.

6 recordsLinked to original sources

arXiv2026

Long-distance spin transport in frustrated hyperkagome magnet Gd3Ga5O12

Transport of spin angular momentum over large distance has been a long sought-after goal in the field of spintronics. While the majority of the research effort has been devoted to the spin transport properties of magnetically ordered materials, spin transport in magnetically frustrated materials has received little attention. Here, we report an anomalous state in frustrated hyperkagome magnetic insulator Gd3Ga5O12, where spin angular momenta can be transported over a long distance of 480 {\mu}m, far exceeding the transport distance of any diffusive spin current in magnetically ordered materials, to the best of our knowledge. Monte Carlo simulations reveal significant spin fluctuations, spin-spin correlations and an absence of conventional magnons in such anomalous state; while the response of the anomalous state to perturbation is found to be akin to an overdamped forced oscillator. We find close relation of such state to the correlated ``director'' state in the material. Our result provides an effective electrical technique to characterize spin-spin correlations and frustrations; it also unveils the potential of frustrated magnets as powerful channel materials for spin transport.

cond-mat.mtrl-sci↗

arXiv2021

Structural, electrical and energy storage properties of lead-free NaNbO3-BaHfO3 thin films

Lead-free dielectric thin-film capacitors with desirable energy storage density are gathering attention due to the increasing environmental concern and the integrating electronic devices. We here reported a series of new highly-orientated (1-x)NaNbO3-xBaHfO3 (x<0.15) lead-free thin films prepared by a sol-gel method, and presented the dependence of their structural, electrical and energy storage properties on the x level of BaHfO3. The microstructure, leakage current and breakdown strength of pristine NaNbO3 thin films are significantly improved by addition of BaHfO3. As a result, the superior energy storage performances were obtained at x=0.1 with recoverable energy storage density of 23.1 J/cm3 at 1100 kV/cm, excellent thermal stability from 30 to 210 0C, good fatigue resistance, and the fast charge-discharge rate.

cond-mat.mtrl-sci↗

arXiv2021

Vortex Dynamics in Amorphous MoSi Superconducting Thin Films

Vortex dynamics in superconductors have received a great deal of attention from both fundamental and applied researchers over the past few decades. Because of its critical role in the energy relaxation process of type II superconductors, vortex dynamics have been deemed a key factor for the emerging superconducting devices, but the effect of irradiation on vortex dynamics remains unclear. With the support of electrical transport measurements under external magnetic fields and irradiation, photon effect on vortex dynamics in amorphous MoSi (a MoSi) superconducting thin films are investigated in this work. The magnetic field dependent critical vortex velocity v* derived from the Larkin Ovchinnikov model is not significantly affected by irradiation. However, vortex depinning is found to be enhanced by photon-induced reduction in potential barrier, which mitigates the adverse effect of film inhomogeneity on superconductivity in the a MoSi thin films. The thorough understanding of the vortex dynamics in a MoSi thin films under the effect of external stimuli is of paramount importance for both further fundamental research in this area and optimization of future superconducting devices.

cond-mat.supr-con↗

arXiv2021

Electronic structure and transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films

High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the narrowed band gap. Electrical resistance measurements confirmed a semiconductor-like behavior for all the thin films. Two charge transport mechanisms, i.e., the thermally-activated transport mechanism at high temperatures and the activation-less transport mechanism at low temperatures, are identified by a self-consistent analysis method. These findings provide a critical insight into the electronic band structure and charge transport behavior of Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, validating it as a compelling high-entropy oxide material for future electronic/energy-related technologies.

cond-mat.mtrl-sci↗

arXiv2020

Optical and electronic properties in amorphous BaSnO3 thin films

Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with non-semiconductor platforms, we herein reported the optical and electronic properties in the prototypical stannate, amorphous barium stannate (BaSnO3) thin films, which were deposited at room temperature and annealed at various temperatures. Despite remaining amorphous status, with increasing the annealing temperature, the defect level within amorphous BaSnO3 thin films could be suppressed.

cond-mat.mtrl-sci↗

arXiv2020

Transport mechanism in amorphous molybdenum silicide thin films

Amorphous molybdenum silicide compounds have attracted significant interest for potential device applications, particularly in single-photon detector. In this work, the temperature-dependent resistance and magneto-resistance behaviors were measured to reveal the charge transport mechanism, which is of great importance for applications but is still insufficient. It is found that Mott variable hopping conductivity dominates the transport of sputtered amorphous molybdenum silicide thin films. Additionally, the observed magneto-resistance crossover from negative to positive is ascribed to the interference enhancement and the shrinkage of electron wave function, both of which vary the probability of hopping between localized sites.

physics.app-ph↗