arXiv subjects

Bishal Baran Maity

Publications and source records attributed to Bishal Baran Maity.

7 recordsLinked to original sources

arXiv2026

Crystal Electric Field Analysis on the Magnetic Properties of Ferromagnetic CeRu$_2$Ge$_2$ Single Crystal

We report a detailed anisotropic studies on the magnetic and transport properties of a CeRu$_2$Ge$_2$ single crystal. A clear ferromagnetic transition is observed at $T_{\rm C} = 7.5$~K in the magnetic susceptibility, electrical resistivity and heat capacity measurements. The magnetoresistance (MR) is positive at low temperature within the magnetically ordered state. We confirmed the presence of a magnon excitation gap in the resistivity, MR and the low temperature heat capacity data. The pronounced anisotropy observed in the magnetic susceptibility and magnetization along the [100] and [001] directions is quantitatively explained within the crystal electric field (CEF) framework using the point-charge model. The analysis reveals a CEF level scheme comprising three doublets, with a ground state and two excited states at 491 and 671~K, that was further confirmed from the Schottky effect in the magnetic part of the heat capacity data. Unlike most Kondo lattice ferromagnets of Ce compounds, where the magnetic easy axis deviates from the expected CEF ground state, CeRu$_2$Ge$_2$ exhibits magnetization, which is fully consistent with the CEF derived ground state wave function, with the easy axis of magnetization aligned along the [001] direction.

cond-mat.str-el↗

arXiv2025

Charge density wave with suppressed long-range structural modulation in canted antiferromagnetic kagome FeGe

Kagome lattice can host abundant exotic quantum states such as superconductivity and charge density wave (CDW). Recently, successive orders of A-type antiferromagnetism (AFM), CDW and canted AFM have been manifested upon cooling in kagome FeGe. However, the mechanism of CDW and interaction with magnetism remains unclear. Here we investigate the evolution of CDW with temperature across the canted AFM by single-crystal x-ray diffraction, scanning tunneling microscope (STM) and resonant elastic x-ray scattering (REXS). Interestingly, CDW-induced superlattice reflections become weak after the canted AFM, although long-range CDW order is still detectable by STM and REXS. We uncover a novel long-range CDW order with suppressed structural modulation, likely due to the competition for the underlying crystal structure between CDW and canted AFM. Additionally, occupational modulations of Ge1 in the kagome plane and displacive modulations of all atoms were extracted. The results confirm Ge dimerization along the c axis and suggest a dynamic transformation between different CDW domains.

cond-mat.str-el↗

arXiv2025

Unveiling the interplay of magnetic order and electronic band structure on the evolution of anomalous Hall effect in MnPtGa single crystal

The recent studies on the anomalous Hall effect (AHE) have revealed an intrinsic relationship between the topological band structure and the experimentally observed transverse conductivity. Consequently, this has led to a heightened focus on examining the topological aspects of AHE. Here we have studied sign reversal of anomalous Hall conductivity with temperature in the single crystalline MnPtGa (space group: $P6_3/mmc$). From the interdependence of the linear resistance, we claim that the origin of such behavior is intrinsic. By systematically studying the electronic band structure and Berry curvature of MnPtGa using first principle calculations supported by magnetic susceptibility and isothermal magnetization measurements we demonstrate that the temperature dependent complex magnetic structure plays a significant role and leads to the sign reversal of anomalous Hall conductivity. We proposed a continuous evolution of the magnetic structure, supported by the ab initio calculations, which is consistent with the experimental data. Our studies have established that the critical temperature ($\approx$110 K), where the sign reversal appears is associated with the magnetic structure and the magnitude of Mn moments.

cond-mat.mtrl-sci↗

arXiv2024

Annealing-induced long-range charge density wave order in magnetic kagome FeGe: fluctuations and disordered structure

Charge density wave (CDW) in kagome materials with the geometric frustration is able to carry unconventional characteristics. Recently, a CDW has been observed below the antiferromagnetic order in kagome FeGe, in which magnetism and CDW are intertwined to form an emergent quantum ground state. However, the CDW is only short-ranged and the structural modulation originating from it has yet to be determined experimentally. Here we realize a long-range CDW order by post-annealing process, and resolve the structure model through single crystal x-ray diffraction. Occupational disorder of Ge resulting from short-range CDW correlations above $T_\mathrm{CDW}$ is identified from structure refinements. The partial dimerization of Ge along the $c$ axis is unveiled to be the dominant distortion for the CDW. Occupational disorder of Ge is also proved to exist in the CDW phase due to the random selection of partially dimerized Ge sites. Our work provides useful insights for understanding the unconventional nature of the CDW in FeGe.

cond-mat.str-el↗

arXiv2024

Non-centrosymmetric, transverse structural modulation in SrAl4, and elucidation of its origin in the BaAl4 family of compounds

At ambient conditions SrAl4 adopts the BaAl4 structure type with space group I4/mmm. It undergoes a charge-density-wave (CDW) transition at TCDW = 243 K, followed by a structural transition at TS = 87 K. Temperature-dependent single-crystal X-ray diffraction (SXRD) leads to the observation of incommensurate superlattice reflections at q = σc* with σ= 0.1116 at 200 K. The CDW has orthorhombic symmetry with the acentric superspace group F222(00sigma)00s, where F222 is a subgroup of Fmmm as well as of I4/mmm. Atomic displacements mainly represent a transverse wave, with displacements that are 90 deg out of phase between the two diagonal directions of the I-centered unit cell, resulting in a helical wave. Small longitudinal displacements are provided by the second harmonic modulation. The orthorhombic phase realized in SrAl4 is similar to that found in EuAl4. Electronic structure calculations and phonon calculations by density functional theory (DFT) have failed to reveal the mechanism of CDW formation. However, DFT reveals that Al atoms dominate the density of states near the Fermi level, thus, corroborating the SXRD measurements. SrAl4 remains incommensurately modulated at the structural transition, where the symmetry lowers from orthorhombic to b-unique monoclinic. We have identified a simple criterion, that correlates the presence of a phase transition with the interatomic distances. Only those compounds XAl4-xGax(X = Ba, Eu, Sr, Ca; 0 < x <4) undergo phase transitions, for which the ratio c/a falls within the narrow range 2.51 < c/a < 2.54.

cond-mat.str-el↗

arXiv2023

Valence fluctuation in Ce$_2$Re$_3$Si$_5$ and Ising-type magnetic ordering in Pr$_2$Re$_3$Si$_5$ single crystals

Single crystals of ${\rm Ce_2Re_3Si_5}$ and ${\rm Pr_2Re_3Si_5}$ have been grown by Czochralski method in a tetra-arc furnace. Powder x-ray diffraction confirmed that these compounds crystallize in the ${\rm U_2Mn_3Si_5}$-type tetragonal crystal structure with space group $P4/mnc$ (No. 128). The anisotropic physical properties have been studied comprehensively by measuring the magnetic susceptibility, isothermal magnetization, electrical transport and specific heat. The low value of magnetic susceptibility together with no magnetic transition down to $2$~K gives evidence that the Ce-ions are in the intermediate valence state in ${\rm Ce_2Re_3Si_5}$. On the other hand ${\rm Pr_2Re_3Si_5}$ revealed a magnetic ordering at $9$~K. The sharp drop in the magnetic susceptibility and a spin flip like metamagnetic transition, for $H~\parallel~[001]$ in the magnetization plot of ${\rm Pr_2Re_3Si_5}$ suggest an Ising-type antiferromagnetic ordering. Based on magnetic susceptibility and isothermal magnetization data, a detailed crystal electric field (CEF) analysis shows that degenerate ${J} = 4$ Hund's rule derived ground state of ${\rm Pr^{3+}}$ ion splits into nine singlets with an overall splitting of $1179$~K. The magnetic ordering in ${\rm Pr_2Re_3Si_5}$ is due to the exchange-generated admixture of the lowest lying CEF energy levels. Heat capacity data reveal a sharp peak at $9$~K, that confirms the bulk nature of the magnetic ordering in ${\rm Pr_2Re_3Si_5}$.

cond-mat.str-el↗

arXiv2022

Shubnikov-de Haas and de Haas-van Alphen oscillation in Czochralski grown CoSi single crystal

Anisotropic transport, Shubnikov-de Haas (SdH), and de Haas-van Alphen (dHvA) quantum oscillations studies are reported on a high-quality CoSi single crystal grown by the Czochralski method. Temperature-dependent resistivities indicate the dominating electron-electron scattering. Magnetoresistance (MR) at 2 K reaches 610% for I||[111] and B||[01-1], whereas it is 500% for I||[01-1] and B||[111]. A negative slope in field-dependent Hall resistivity suggests electrons are the majority carriers. The carrier concentration extracted from Hall conductivity indicates no electron-hole compensation. In 3D CoSi, the electron transport lifetime is found to be approximately in the same order as quantum lifetime, whereas in 2D electron gas the long-range scattering drives the transport life much larger than the quantum lifetime. From linear and Hall SdH oscillations the effective masses and Dingle temperatures have been calculated. The dHvA oscillation reveals three frequencies at 18 ($γ$), 558 ($α$) and 663 T ($β$)), whereas, SdH oscillation results in only two frequencies $α$ and $β$. The $γ$ frequency observed in dHvA oscillation is a tiny hole pocket at the $Γ$ point.

cond-mat.mtrl-sci↗