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Biswarup Satpati

Publications and source records attributed to Biswarup Satpati.

38 records · Page 3Linked to original sources

Interface-dominated Growth of a Metastable Novel Alloy Phase

A new \textit{D0$_{23}$} metastable phase of Cu$_3$Au is found to grow at the interfaces of Au/Cu multilayers deposited by magnetron sputtering. The extent of formation of this novel alloy phase depends upon an optimal range of interfacial width primarily governed by the deposition wattage of the dc-magnetron used. Such interfacially confined growth is utilized to grow a $\sim$ 300 nm thick Au/Cu multilayer with thickness of each layer nearly equal to the optimal interfacial width which was obtained from secondary ion mass spectrometry (SIMS) data. This growth technique is observed to enhance the formation of the novel alloy phase to a considerable extent. SIMS depth profile also indicates that the mass fragment corresponding to Cu$_3$Au occupies the whole film while x-ray diffraction (XRD) shows almost all the strong peaks belonging to the \textit{D0$_{23}$} structure. High resolution cross-sectional transmission electron microscopy (HR-XTEM) shows the near perfect growth of the individual layers and also the lattice image of the alloy phase in the interfacial region. Vacuum annealing of the alloy film and XRD studies indicate stabilization of the \textit{D0$_{23}$} phase at $\sim$ 150$^{\circ}$C. The role of interfacial confinement, the interplay between interfacial strain and free energy and the hyperthermal species generated during the sputtering process are discussed.

cond-mat.mtrl-sci↗

High Temperature Ferromagnetism in Zn1-xMnxO semiconductor thin films

Clear evidence of ferromagnetic behavior at temperatures >400 K as well as spin polarization of the charge carriers have been observed in ZnMnO thin films grown on Al2O3 and MgO substrates. The magnetic properties depended on the exact Mn concentration and the growth parameters. In well-characterized single-phase films, the magnetic moment is 4.8?B/Mn at 350 K, the highest moment yet reported for any Mn doped magnetic semiconductor. Anomalous Hall effect shows that the charge carriers (electrons) are spin polarized and participate in the observed ferromagnetic behavior.

cond-mat.mtrl-sci↗