arXiv subjects

Bivas Saha

Publications and source records attributed to Bivas Saha.

5 recordsLinked to original sources

arXiv2025

Vector Spin Chirality Switching in Noncollinear Antiferromagnets

Spin chirality provides a powerful route to control magnetic and topological phases in materials, enabling next-generation spintronic and quantum technologies. Coplanar noncollinear antiferromagnets with Kagome lattice spin geometries host vector spin chirality (VSC), the handedness of spin arrangement, and offer an excellent platform for chirality-driven phase control. However, the microscopic mechanisms governing VSC switching and its coupling to magnetic order, electronic structure, and quantum geometry remain elusive, with experimental evidence still lacking. Here, we present conclusive experimental evidence of temperature-driven VSC switching in an archetypal noncollinear antiferromagnetic manganese chromium nitride (Mn3CrN) epitaxial thin films. The VSC switching induces a concomitant quantum-geometric and Lifshitz transition, manifested through a pronounced peak in anomalous Hall conductivity remanence, a metal-insulator-like crossover in longitudinal resistivity, and a distinct evolution of x-ray magnetic circular dichroic signal. The reversal of VSC reconstructs the spin configuration, Fermi surface topology and Berry curvature, marking a unified magnetic-electronic-quantum geometric transition. This emergent behaviour, captured through magneto-transport and magneto-optic measurements, and supported by first-principles theory establish VSC as an active control knob for chirality-driven phase engineering and the design of multifunctional quantum devices.

cond-mat.mtrl-sci↗

arXiv2024

Electron Confinement-Induced Plasmonic Breakdown in Metals

Plasmon resonance in metals represents the collective oscillation of the free electron gas density and enables enhanced light-matter interactions in nanoscale dimensions. Traditionally, the classical Drude model describes the plasmonic excitation, wherein the plasma frequency exhibits no spatial dispersion. Here, we show conclusive experimental evidence of the breakdown of the plasmon resonance and a consequent photonic metal-insulator transition in an ultrathin archetypal refractory plasmonic material, hafnium nitride (HfN). Epitaxial HfN thick films exhibit a low-loss and high-quality Drude-like plasmon resonance in the visible spectral range. However, as the film thickness is reduced to nanoscale dimensions, the Coulomb interaction among electrons increases due to the electron confinement, leading to the spatial dispersion of the plasma frequency. Importantly, with the further decrease in thickness, electrons lose their ability to shield the incident electric field, turning the medium into a dielectric. The breakdown of the plasmon resonance in epitaxial ultrathin metals could be useful for fundamental physics studies in transdimensional regimes and novel photonic device applications.

physics.optics↗

arXiv2022

Scandium Nitride as a Gateway III-Nitride Semiconductor for Optoelectronic Artificial Synaptic Devices

Traditional computation based on von Neumann architecture is limited by the time and energy consumption due to data transfer between the storage and the processing units. The von Neumann architecture is also inefficient in solving unstructured, probabilistic, and real-time problems. To address these challenges, a new brain-inspired neuromorphic computational architecture is required. Due to absence of resistance-capacitance (RC) delay, high bandwidth and low power consumption, optoelectronic artificial synaptic devices are highly attractive. Yet stable, scalable, and complementary-metal-oxide-semiconductor (CMOS)-compatible synapses have not been demonstrated. In this work, persistence in the photoconductivity of undoped and magnesium-doped scandium nitride (ScN) is equated to the inhibitory and excitatory synaptic plasticity of the biological synapses responsible for memory and learning. Primary functionalities of a biological synapse like short-term memory (STM), long-term memory (LTM), the transition from STM-to-LTM, learning and forgetting, frequency-selective optical filtering, frequency-dependent potentiation and depression, Hebbian learning, and logic gate operations are demonstrated.

cs.ET↗

arXiv2022

Secondary Phase Limited Metal-Insulator Phase Transition in Chromium Nitride Thin Films

Chromium nitride (CrN) is a well-known hard coating material that has found applications in abrasion and wear-resistant cutting tools, bearings, and tribology applications due to its high hardness, high-temperature stability, and corrosion-resistant properties. In recent years, CrN has also attracted significant interest due to its high thermoelectric power factor, and for its unique and intriguing metal-insulator phase transition. While CrN bulk single-crystals exhibit the characteristic metal-insulator transition accompanied with structural (orthorhombic-to-rocksalt) and magnetic (antiferromagnetic-to-paramagnetic) transition at ~260-280K, observation of such phase transition in thin-film CrN has been scarce and highly debated. In this work, the formation of the secondary metallic Cr2N phase during the growth is demonstrated to inhibit the observation of metal-insulator phase transition in CrN thin films. When the Cr-flux during deposition is reduced below a critical limit, epitaxial and stoichiometric CrN thin film is obtained that reproducibly exhibits the phase transition. Annealing of the mixed-phase film inside reducing NH3 environment converts the Cr2N into CrN, and a discontinuity in the electrical resistivity at ~ 277 K appears which supports the underlying hypothesis. A clear demonstration of the origin behind the controversy of the metal-insulator transition in CrN thin films marks significant progress and would enable its nanoscale device realization.

cond-mat.mtrl-sci↗

arXiv2021

Synthesis and study of ScN thin films

To contemplate an alternative approach for the minimization of diffusion at high temperature depositions, present findings impart viability of room-temperature deposited reactively sputtered ScN thin film samples. The adopted room temperature route endows precise control over the $R_{N_2}$ flow for a methodical structural phase evolution from Sc$\to$ScN and probe the correlated physical aspects of the highly textured ScN samples. In the nitrided regime i.e. at $R_{N_2}$ = 2.5-100% flow, incorporation of unintentional oxygen defects were evidenced from surface sensitive soft x-ray absorption spectroscopy study, though less compared to their metal ($R_{N_2} = 0\%$) and interstitial ($R_{N_2} = 1.6\%$) counterparts, due to higher Gibb's free energy for Sc-O-N formation with no trace of ligand field splitting around the O K-edge spectra. To eradicate the sceptism of appearance of N K-edge (401.6 eV) and Sc L-edge (402.2 eV) absorption spectra adjacent to each other, the nascent Sc K-edge study has been adopted for the first time to validate complementary insight on the metrical parameters of the Sc-N system taken into consideration. Optical bandgaps of the polycrystalline ScN thin film samples were found to vary between 2.25-2.62 eV as obtained from the UV-Vis spectroscopy, whereas, the nano-indentation hardness and modulus of the as-deposited samples lie between 15-34GPa and 152-476GPa, respectively following a linearly increasing trend of resistance to plastic deformations. Besides, contrary to other early 3d transition metal nitrides (TiN, VN, CrN), a comprehensive comparison of noticeably large homogeneity range in Sc-N has been outlined to apprehend the minuscule lattice expansion over the large $R_{N_2}$ realm.

cond-mat.mtrl-sci↗