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Bixin Yan

Publications and source records attributed to Bixin Yan.

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Manipulating ferroelectricity without electrical bias: A perspective

Ferroelectric materials are established candidates for beyond complementary metal-oxide-semiconductor technology, owing to their non-volatile spontaneous electrical polarization. The recent boom in electric dipole texture engineering and manipulation in such materials has revealed exciting routes for controlling ferroelectric polarization, offering alternatives to the classical, sometimes challenging, application of electrical fields. In this short perspective, we shed light on electrode-free external stimuli enabling control over polar states in thin films. We bring awareness to the polarizing role of chemically-engineered surface contributions and provide insights into the combination of chemical substitution and mechanical pressure, complementing the polar state tuning capabilities readily enabled by flexoelectricity. Finally, we describe recent developments in the optical modulation of polarization. Thus, our perspective aims to stimulate the advancement of alternative means to act on polarization states and facilitate the development of ferroelectric-based applications.

cond-mat.mtrl-sci

Electrode modified domain morphology in ferroelectric capacitors revealed by X-ray microscopy

Ferroelectric thin films present a powerful platform for next generation computing and memory applications. However, domain morphology and dynamics in buried ferroelectric stacks have remained underexplored, despite the importance for real device performance. Here, nanoprobe X-ray diffraction (nano-XRD) is used to image ferroelectric domains inside BiFeO3-based capacitors, revealing striking differences from bare films such as local disorder in domain architecture and partial polarization reorientation. We demonstrate sensitivity to ferroelectric reversal in poled capacitors, revealing expansive/compressive (001) strain for up-/down-polarization using nano-XRD. We observe quantitative and qualitative differences between poling by piezoresponse force microscopy (PFM) and in devices. Further, biasing induces lattice tilt at electrode edges which may modify performance in down-scaled devices. Direct comparison with PFM polarized structures even demonstrates potential nano-XRD sensitivity to domain walls. Our results establish nano-XRD as a noninvasive probe of buried ferroelectric domain morphologies and dynamics, opening avenues for operando characterization of energy-efficient nanoscale devices.

cond-mat.mtrl-sci