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Björn Sbierski

Publications and source records attributed to Björn Sbierski.

34 records · Page 2Linked to original sources

Spectrum-wide quantum criticality at the surface of class AIII topological phases: An "energy stack" of integer quantum Hall plateau transitions

In the absence of spin-orbit coupling, the conventional dogma of Anderson localization asserts that all states localize in two dimensions, with a glaring exception: the quantum Hall plateau transition (QHPT). In that case, the localization length diverges and interference-induced quantum-critical spatial fluctuations appear at all length scales. Normally QHPT states occur only at isolated energies; accessing them therefore requires fine-tuning of the electron density or magnetic field. In this paper we show that QHPT states can be realized throughout an energy continuum, i.e. as an "energy stack" of critical states wherein each state in the stack exhibits QHPT phenomenology. The stacking occurs without fine-tuning at the surface of a class AIII topological phase, where it is protected by U(1) and (anomalous) chiral or time-reversal symmetries. Spectrum-wide criticality is diagnosed by comparing numerics to universal results for the longitudinal Landauer conductance and wave function multifractality at the QHPT. Results are obtained from an effective 2D surface field theory and from a bulk 3D lattice model. We demonstrate that the stacking of quantum-critical QHPT states is a robust phenomenon that occurs for AIII topological phases with both odd and even winding numbers. The latter conclusion may have important implications for the still poorly-understood logarithmic conformal field theory believed to describe the QHPT.

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Non-Anderson critical scaling of the Thouless conductance in 1D

We propose and investigate numerically a one-dimensional model which exhibits a non-Anderson disorder-driven transition. Such transitions have recently been attracting a great deal of attention in the context of Weyl semimetals, one-dimensional systems with long-range hopping and high-dimensional semiconductors. Our model hosts quasiparticles with the dispersion $\pm |k|^α\mathrm{sign} k$ with $α<1/2$ near two points (nodes) in momentum space and includes short-range-correlated random potential which allows for scattering between the nodes and near each node. In contrast with the previously studied models in dimensions $d<3$, the model considered here exhibits a critical scaling of the Thouless conductance which allows for {an accurate} determination of the critical properties of the non-Anderson transition, with a precision significantly exceeding the results obtained from the critical scaling of the density of states, usually simulated at such transitions. We find that in the limit of the vanishing parameter $\varepsilon=2α-1$ the correlation-length exponent $ν=2/(3|\varepsilon|)$ at the transition is inconsistent with the prediction $ν_{RG}=1/|\varepsilon|$ of the perturbative renormalisation-group analysis. Our results allow for a numerical verification of the convergence of $\varepsilon$-expansions for non-Anderson disorder-driven transitions and, in general, interacting field theories near critical dimensions.

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Strong disorder in nodal semimetals: Schwinger-Dyson--Ward approach

The self-consistent Born approximation quantitatively fails to capture disorder effects in semimetals. We present an alternative, simple-to-use non-perturbative approach to calculate the disorder induced self-energy. It requires a sufficient broadening of the quasiparticle pole and the solution of a differential equation on the imaginary frequency axis. We demonstrate the performance of our method for various paradigmatic semimetal Hamiltonians and compare our results to exact numerical reference data. For intermediate and strong disorder, our approach yields quantitatively correct momentum resolved results. It is thus complementary to existing RG treatments of weak disorder in semimetals.

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Topological invariants for the Haldane phase of interacting SSH chains -- a functional RG approach

We present a functional renormalization group approach to interacting topological Green function invariants with a focus on the nature of transitions. The method is applied to chiral symmetric fermion chains in the Mott limit that can be driven into a Haldane phase. We explicitly show that the transition to this phase is accompanied by a zero of the fermion Green function. Our results for the phase boundary are quantitatively benchmarked against DMRG data.

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Detecting phases in one-dimensional many-fermion systems with the functional renormalization group

The functional renormalization group (FRG) has been used widely to investigate phase diagrams, in particular the one of the two-dimensional Hubbard model. So far, the study of one-dimensional models has not attracted as much attention. We use the FRG to investigate the phases of a one-dimensional spinless tight-binding chain with nearest and next-nearest neighbor interactions at half filling. The phase diagram of this model has already been established with other methods, and phase transitions from a metallic phase to ordered phases take place at intermediate to strong interactions. The model is thus well suited to analyze the potential and the limitations of the FRG in this regime of interactions. We employ flow equations that are exact up to second order in the interaction, which implies that we take into account the frequency dependence of the two-particle vertex as well as the feedback of the dynamic self-energy. For intermediate nearest neighbor interactions, our scheme captures the phase transition from a metallic phase to a charge density wave with alternating occupation. The critical interaction, at which this transition occurs, is underestimated due to our approximations. Similarly, for intermediate next-nearest neighbor interactions, we observe a transition to a charge density wave with occupation pattern ..00110011... We show that taking into account a feedback of the two-particle vertex in the flow equation is essential for the detection of those phases.

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Quantitative analytical theory for disordered nodal points [Article and Erratum]

Disorder effects are especially pronounced around nodal points in linearly dispersing bandstructures as present in graphene or Weyl semimetals. Despite the enormous experimental and numerical progress, even a simple quantity like the average density of states cannot be assessed quantitatively by analytical means. We demonstrate how this important problem can be solved employing the functional renormalization group method and, for the two dimensional case, demonstrate excellent agreement with reference data from numerical simulations based on tight-binding models. In three dimensions our analytic results also improve drastically on existing approaches.

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Transversal magnetotransport in Weyl semimetals: Exact numerical approach

Magnetotransport experiments on Weyl semimetals are essential for investigating the intriguing topological and low-energy properties of Weyl nodes. If the transport direction is perpendicular to the applied magnetic field, experiments have shown a large positive magnetoresistance. In this work, we present a theoretical scattering matrix approach to transversal magnetotransport in a Weyl node. Our numerical method confirms and goes beyond the existing perturbative analytical approach by treating disorder exactly. It is formulated in real space and is applicable to mesoscopic samples as well as in the bulk limit. In particular, we study the case of clean and strongly disordered samples.

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Second order functional renormalization group approach to one-dimensional systems in real and momentum space

We devise a functional renormalization group treatment for a chain of interacting spinless fermions which is correct up to second order in the interaction strength. We treat both inhomogeneous systems in real-space as well as the translational invariant case in a k-space formalism. The strengths and shortcomings of the different schemes as well as technical details of their implementation are discussed. We use the method to study two proof-of-principle problems in the realm of Luttinger liquid physics, namely reflection at interfaces and power laws in the occupation number as a function of crystal momentum.

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Tilted disordered Weyl semimetals

Although Lorentz invariance forbids the presence of a term that tilts the energy-momentum relation in the Weyl Hamiltonian, a tilted dispersion is not forbidden and, in fact, generic for condensed matter realizations of Weyl semimetals. We here investigate the combined effect of such a tilted Weyl dispersion and the presence of potential disorder. In particular, we address the influence of a tilt on the disorder-induced phase transition between a quasi-ballistic phase at weak disorder, in which the disorder is an irrelevant perturbation, and a diffusive phase at strong disorder. Our main result is that the presence of a tilt leads to a reduction of the critical disorder strength for this transition or, equivalently, that increasing the tilt at fixed disorder strength drives the system through the phase transition to the diffusive strong-disorder phase. Notably this obscures the tilt induced Lifshitz transition to an over tilted type-II Weyl phase at any finite disorder strength. Our results are supported by analytical calculations using the self-consistent Born approximation and numerical calculations of the density of states and of transport properties.

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Weyl node with random vector potential

We study Weyl semimetals in the presence of generic disorder, consisting of a random vector potential as well as a random scalar potential. We derive renormalization group flow equations to second order in the disorder strength. These flow equations predict a disorder-induced phase transition between a pseudo-ballistic weak-disorder phase and a diffusive strong-disorder phase for sufficiently strong random scalar potential or for a pure three-component random vector potential. We verify these predictions using a numerical study of the density of states near the Weyl point and of quantum transport properties at the Weyl point. In contrast, for a pure single-component random vector potential the diffusive strong-disorder phase is absent.

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Disordered double Weyl node

Double Weyl nodes are topologically protected band crossing points which carry chiral charge $\pm2$. They are stabilized by $C_4$ point group symmetry and are predicted to occur in $\mathrm{SrSi_2}$ or $\mathrm{HgCr_{2}Se_{4}}$. We study their fate in the presence of quenched disorder by numerical transport calculations and scaling arguments. We find that a double Weyl node is unstable in a disordered environment and splits into a pair of emergent simple Weyl nodes which carry equal chiral charge of $\pm1$. This pair of simple Weyl nodes is robust to disorder up to a certain critical disorder strength, in complete analogy to their `elementary' counterparts.

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The weak side of strong topological insulators

Strong topological insulators may have nonzero weak indices. The nonzero weak indices allow for the existence of topologically protected helical states along line defects of the lattice. If the lattice admits line defects that connect opposite surfaces of a slab of such a "weak-and-strong" topological insulator, these states effectively connect the surface states at opposite surfaces. Depending on the phases accumulated along the dislocation lines, this connection results in a suppression of in-plane transport and the opening of a spectral gap or in an enhanced density of states and an increased conductivity.

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Quantum Critical Exponents for a Disordered Three-Dimensional Weyl Node

Three-dimensional Dirac and Weyl semimetals exhibit a disorder-induced quantum phase transition between a semimetallic phase at weak disorder and a diffusive-metallic phase at strong disorder. Despite considerable effort, both numerically and analytically, the critical exponents $ν$ and $z$ of this phase transition are not known precisely. Here we report a numerical calculation of the critical exponent $ν=1.47\pm0.03$ using a minimal single-Weyl node model and a finite-size scaling analysis of conductance. Our high-precision numerical value for $ν$ is incompatible with previous numerical studies on tight-binding models and with one- and two-loop calculations in an $ε$-expansion scheme. We further obtain $z=1.49\pm0.02$ from the scaling of the conductivity with chemical potential.

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Quantum transport in Dirac materials: signatures of tilted and anisotropic Dirac and Weyl cones

We calculate conductance and noise for quantum transport at the nodal point for arbitrarily tilted and anisotropic Dirac or Weyl cones. Tilted and anisotropic dispersions are generic in absence of certain discrete symmetries, such as particle-hole and lattice point group symmetries. Whereas anisotropy affects the conductance g, but leaves the Fano factor F (the ratio of shot noise power and current) unchanged, a tilt affects both g and F. Since F is a universal number in many other situations, this finding is remarkable. We apply our general considerations to specific lattice models of strained graphene and a pyrochlore Weyl semi-metal.

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Quantum transport of disordered Weyl semimetals at the nodal point

Weyl semimetals are paradigmatic topological gapless phases in three dimensions. We here address the effect of disorder on charge transport in Weyl semimetals. For a single Weyl node with energy at the degeneracy point and without interactions, theory predicts the existence of a critical disorder strength beyond which the density of states takes on a nonzero value. Predictions for the conductivity are divergent, however. In this work, we present a numerical study of transport properties for a disordered Weyl cone at zero energy. For weak disorder our results are consistent with a renormalization group flow towards an attractive pseudoballistic fixed point with zero conductivity and a scale-independent conductance; for stronger disorder diffusive behavior is reached. We identify the Fano factor as a signature that discriminates between these two regimes.

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Z2 phase diagram of three-dimensional disordered topological insulator via scattering matrix approach

The role of disorder in the field of three-dimensional time reversal invariant topological insulators has become an active field of research recently. However, the computation of Z2 invariants for large, disordered systems still poses a considerable challenge. In this paper we apply and extend a recently proposed method based on the scattering matrix approach, which allows the study of large systems at reasonable computational effort with few-channel leads. By computing the Z2 invariant directly for the disordered topological Anderson insulator, we unambiguously identify the topological nature of this phase without resorting to its connection with the clean case. We are able to efficiently compute the Z2 phase diagram in the mass-disorder plane. The topological phase boundaries are found to be well described by the self consistent Born approximation, both for vanishing and finite chemical potential.

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