Boaz Almog | Searcharxiv

arXiv2011

Temperature dependance of the tunneling density of states in sub-micron planar metal / oxide / graphene junctions

We present tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM[Y. Zhang et al., Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150K, which is four times smaller than the theoretically expected $T_{c}$, from the accepted mean field model[T. O. Wehling et al. Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated $T_{c}$.

cond-mat.str-el↗

arXiv2011

Coexistence of a triplet nodal order-parameter and a singlet order-parameter at the interfaces of ferromagnet-superconductor Co/CoO/In junctions

We present differential conductance measurements of Cobalt / Cobalt-Oxide / Indium planar junctions, 500nm x 500nm in size. The junctions span a wide range of barriers, from very low to a tunnel barrier. The characteristic conductance of all the junctions show a V-shape structure at low bias instead of the U-shape characteristic of a s-wave order parameter. The bias of the conductance peaks is, for all junctions, larger than the gap of indium. Both properties exclude pure s-wave pairing. The data is well fitted by a model that assumes the coexistence of s-wave singlet and equal spin p-wave triplet fluids. We find that the values of the s-wave and p-wave gaps follow the BCS temperature dependance and that the amplitude of the s-wave fluid increases with the barrier strength.

cond-mat.supr-con↗