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Bob C. Schroeder

Publications and source records attributed to Bob C. Schroeder.

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Organic Semiconductor Alignment via Confinement in Vapor-Guided Droplets

Organic semiconductors are lightweight, solution-processable materials with strong potential for printed and flexible electronics, from deformable displays to wearable sensors. Despite significant advances in materials synthesis and manufacturing, controlling molecular and mesoscale alignment during deposition remains a central challenge, as film morphology critically governs charge transport and device performance. Here, we demonstrate that flows developing within the intrinsically confined volume of microliter vapor-guided droplets can be harnessed to produce highly aligned organic semiconductor films. As droplets move in response to an external vapor source, internal flows align organic semiconducting nanowires within the droplet prior to deposition, yielding films with pronounced directional order. Organic field-effect transistors fabricated with this approach exhibit approximately 40% enhancement in saturation current relative to spin-coated controls. Beyond improved device performance, the contactless and compact nature of our method enables the deposition and alignment of organic semiconductors on curved and flexible surfaces. More broadly, vapor-guided droplets offer a scalable framework for the confinement-induced alignment of functional soft materials, with potential for integration into existing additive manufacturing platforms for flexible electronics and beyond.

cond-mat.soft

Charge-Transfer State Dynamics Following Hole and Electron Transfer in Organic Photovoltaic Devices

The formation of bound electron-hole pairs, also called charge-transfer (CT) states, in organic-based photovoltaic devices is one of the dominant loss mechanisms hindering performance. While CT state dynamics following electron transfer from donor to acceptor have been widely studied, there is not much known about the dynamics of bound CT states produced by hole transfer from the acceptor to the donor. In this letter, we compare the dynamics of CT states formed in the different charge-transfer pathways in a range of model systems. We show that the nature and dynamics of the generated CT states are similar in the case of electron and hole transfer. However the yield of bound and free charges is observed to be strongly dependent on the HOMOD-HOMOA and LUMOD-LUMOA energy differences of the material system. We propose a qualitative model in which the effects of static disorder and sampling of states during the relaxation determine the probability of accessing CT states favourable for charge separation.

cond-mat.mes-hall