arXiv subjects

Bohdan Khromets

Publications and source records attributed to Bohdan Khromets.

6 recordsLinked to original sources

arXiv2026

Localized orbitals and tunnel couplings from general confinement potentials in gate-defined quantum-dot arrays

Efficient simulation of dense gate-defined multi-quantum-dot arrays requires accurate and scalable modeling methods, compatible with asymmetries and imperfections of realistic voltage-controlled confinement potentials. We present a numerical localization procedure that rotates the eigenbasis of a general one-particle effective orbital Hamiltonian into $s$-, $p$-, $d$-, $\ldots$-shells of localized orbital wavefunctions associated with individual quantum dots. The pairwise tunnel couplings between such states are computed directly as matrix elements of the Hamiltonian. We demonstrate this procedure on a 2D triangular Si-MOS triple-quantum-dot array by obtaining the voltage dependencies of the tunnel couplings and their distributions in the presence of disorder. We discuss the implications of this evaluation method on the many-body calculations, and relate it to the experimental tunnel coupling measurements.

cond-mat.mes-hall↗

arXiv2026

Impact of gate-voltage noise on silicon spin-qubit variational quantum eigensolvers

Quantum computers offer a route to outperform classical methods in tasks such as molecular simulation, motivating hybrid algorithms like the Variational Quantum Eigensolver (VQE) for near-term devices. Silicon spin qubits are a promising platform for scalable quantum computation, but their performance is limited by hardware imperfections -- most notably charge-noise-induced potential fluctuations and static miscalibration of gate-electrode voltages -- which degrade quantum gate fidelities and, ultimately, algorithmic accuracy. Here we develop a hardware-algorithm co-simulation framework for silicon quantum-dot processors that links 3D electrostatics to effective $g$-factors and exchange couplings, and propagates voltage-level noise through realistic control pulses. Using VQE for $\mathrm{H}_2$ ground-state energy estimation as a circuit-level testbed, we study both static scaling/offset errors on the gate-electrode voltages and stochastic fluctuations modeled as random-telegraph noise with tunable amplitudes and switching times. At the gate level, we show that exchange-based two-qubit gates are roughly an order of magnitude more sensitive to these types of noise than ESR-driven single-qubit rotations. Quantum process tomography and Kraus-operator analysis further distinguish coherent and incoherent contributions and quantify the fraction of error that is, in principle, correctable by a compensating unitary. Embedding these noise models into the VQE circuit, we identify regimes of miscalibration strength and noise switching time compatible with chemically accurate energy estimates, and discuss how statistical post-processing based on the full distribution of noisy energy estimates could further improve accuracy.

quant-ph↗

arXiv2024

Quantum optimal control robust to $1/f^α$ noises using fractional calculus: voltage-controlled exchange in semiconductor spin qubits

Low-frequency $1/f^α$ charge noise significantly hinders the performance of voltage-controlled spin qubits in quantum dots. Here, we utilize fractional calculus to design voltage control pulses yielding the highest average fidelities for noisy quantum gate operations. We focus specifically on the exponential voltage control of the exchange interaction generating two-spin $\mathrm{SWAP}^k$ gates. When stationary charge noise is the dominant source of gate infidelity, we derive that the optimal exchange pulse is long and weak, with the broad shape of the symmetric beta distribution function with parameter $1-α/2$. The common practice of making exchange pulses fast and high-amplitude still remains beneficial in the case of strongly nonstationary noise dynamics, modeled as fractional Brownian motion. The proposed methods are applicable to the characterization and optimization of quantum gate operations in various voltage-controlled qubit architectures.

quant-ph↗

arXiv2024

Simulated Charge Stability in a MOSFET Linear Quantum Dot Array

In this study, we address challenges in designing quantum information processors based on electron spin qubits in electrostatically-defined quantum dots (QDs). Numerical calculations of charge stability diagrams are presented for a realistic double QD device geometry. These methods generaize to linear QD arrays, and are based on determining the effective parameters of a Hubbard model Hamiltonian that is then diagonalized to find the many-electron ground state energy. These calculations enable the identification of gate voltage ranges that maintain desired charge states during qubit manipulation, and also account for electrical cross-talk between QDs. As a result, the methods presented here promise to be a valuable tool for developing scalable spin qubit quantum processors.

cond-mat.mes-hall↗

arXiv2024

Hamiltonian engineering with time-ordered evolution for unitary control of electron spins in semiconductor quantum dots

We present a unitary control pulse design method for a scalable quantum computer architecture based on electron spins in lateral quantum dots. We employ simultaneous control of spin interactions and derive the functional forms of spin Hamiltonian parameter pulses for a universal set of 1- and 2-qubit logic gates. This includes selective spin rotations with the weak local g-factor variations in the presence of the global oscillating field, and a Control-Phase operation with the simultaneous control of g-factors and exchange couplings. We outline how to generalize the control scheme to multiqubit gate operations and the case of constrained or imperfect control of the Hamiltonian parameters.

quant-ph↗

arXiv2020

Optimizing lateral quantum dot geometries for reduced exchange noise

For electron spin qubits in quantum dots, reducing charge noise sensitivity is a critical step in achieving fault tolerant two-qubit gates mediated by the exchange interaction. This work explores how the physical device geometry affects the sensitivity of exchange to fluctuations in applied gate voltage and interdot bias due to charge noise. We present a modified linear combination of harmonic orbitals configuration interaction (LCHO-CI) method for calculating exchange energies that is applicable to general quantum dot networks. In the modified LCHO-CI approach, an orthogonal set of harmonic orbitals formed at the center of the dot network is used to approximate the many-electron states. This choice of basis significantly reduces the computation time of the full CI calculation by enabling a pre-calculated library of matrix elements to be used in evaluating the Coulomb integrals. The resultant many-electron spectra are mapped onto a Heisenberg Hamiltonian to determine the individual pairwise electronic exchange interaction strengths, $J_{ij}$. The accuracy of the modified LCHO-CI method is further improved by optimizing the choice of harmonic orbitals without significantly lengthening the calculation time. The modified LCHO-CI method is used to calculate $J$ for a silicon MOSFET double quantum dot occupied by two electrons. Two-dimensional potential landscapes are calculated from a 3D device structure, including both the Si/SiO$_2$ heterostructure and metal gate electrodes. The computational efficiency of the modified LCHO-CI method enables systematic tuning of the device parameters to determine their impact on the sensitivity of $J$ to charge noise, including plunger gate size, tunnel gate width, SiO$_2$ thickness and dot eccentricity. Generally, we find that geometries with larger dot charging energies, smaller plunger gate lever arms, and symmetric dots are less sensitive to noise.

cond-mat.mes-hall↗