arXiv subjects

Bojan Hiti

Publications and source records attributed to Bojan Hiti.

6 recordsLinked to original sources

arXiv2025

TCT-based monitoring of LGAD radiation hardness for ATLAS-HGTD production

Production of the High Granularity Timing Detector for the ATLAS experiment at High Luminosity LHC requires over 21000 silicon sensors based on Low Gain Avalanche Diode (LGAD) technology. Their radiation hardness is monitored as a part of the production quality control. Dedicated test structures from each wafer are irradiated with neutrons and a fast and comprehensive characterization is required. We introduce a new test method based on Transient Current Technique (TCT) performed in the interface region of two LGAD devices. The measurement enables extraction of numerous sensor performance parameters, such as LGAD gain layer depletion voltage, LGAD gain dependence on bias voltage, sensor leakage current and effective interpad distance. Complementary capacitance-voltage measurements and charge collection measurements with 90Sr on the same samples have been performed to calibrate the TCT results in terms of charge collection and define acceptance criteria for wafer radiation hardness in the ATLAS-HGTD project.

physics.ins-det↗

arXiv2024

The ECFA Early-Career Researchers Panel: Report for the year 2023

The European Committee for Future Accelerators (ECFA) Early-Career Researcher (ECR) panel, which represents the interests of the ECR community to ECFA, presents in this document its initiatives and activities in the year 2023. This report summarises the process of the first big turnover in the panel composition at the start of 2023 and reports on the activities of the active working groups - either pursued from before or newly established. The overarching goal of the ECFA-ECR panel is to better understand and support the diverse interests of early-career researchers in the ECFA community and beyond.

physics.acc-ph↗

arXiv2022

The ECFA Early Career Researcher's Panel: composition, structure, and activities, 2021 -- 2022

The European Committee for Future Accelerators (ECFA) Early Career Researcher's (ECR) panel, which represents the interests of the ECR community to ECFA, officially began its activities in January 2021. In the first two years, the panel has defined its own internal structure, responded to ECFA requests for feedback, and launched its own initiatives to better understand and support the diverse interests of early career researchers. This report summarises the panel composition and structure, as well as the different activities the panel has been involved with during the first two years of its existence.

physics.acc-ph↗

arXiv2021

Results of the 2021 ECFA Early-Career Researcher Survey on Training in Instrumentation

The European Committee for Future Accelerators (ECFA) Early-Career Researchers (ECR) Panel was invited by the ECFA Detector R&D Roadmap conveners to collect feedback from the European ECR community. A working group within the ECFA ECR panel held a Townhall Meeting to get first input, and then designed and broadly circulated a detailed survey to gather feedback from the larger ECR community. A total of 473 responses to this survey were received, providing a useful overview of the experiences of ECRs in instrumentation training and related topics. This report summarises the feedback received, and is intended to serve as an input to the ECFA Detector R&D Roadmap process.

physics.ins-det↗

arXiv2017

Performance of irradiated thin n-in-p planar pixel sensors for the ATLAS Inner Tracker upgrade

The ATLAS collaboration will replace its tracking detector with new all silicon pixel and strip systems. This will allow to cope with the higher radiation and occupancy levels expected after the 5-fold increase in the luminosity of the LHC accelerator complex (HL-LHC). In the new tracking detector (ITk) pixel modules with increased granularity will implement to maintain the occupancy with a higher track density. In addition, both sensors and read-out chips composing the hybrid modules will be produced employing more radiation hard technologies with respect to the present pixel detector. Due to their outstanding performance in terms of radiation hardness, thin n-in-p sensors are promising candidates to instrument a section of the new pixel system. Recently produced and developed sensors of new designs will be presented. To test the sensors before interconnection to chips, a punch-through biasing structure has been implemented. Its design has been optimized to decrease the possible tracking efficiency losses observed. After irradiation, they were caused by the punch-through biasing structure. A sensor compatible with the ATLAS FE-I4 chip with a pixel size of 50x250 $\mathrmμ$m$^{2}$, subdivided into smaller pixel implants of 30x30 $\mathrmμ$m$^{2}$ size was designed to investigate the performance of the 50x50 $\mathrmμ$m$^{2}$ pixel cells foreseen for the HL-LHC. Results on sensor performance of 50x250 and 50x50 $\mathrmμ$m$^{2}$ pixel cells in terms of efficiency, charge collection and electric field properties are obtained with beam tests and the Transient Current Technique.

physics.ins-det↗

arXiv2017

Neutron irradiation test of depleted CMOS pixel detector prototypes

Charge collection properties of depleted CMOS pixel detector prototypes produced on p-type substrate of 2 k$Ω$cm initial resistivity (by LFoundry 150 nm process) were studied using Edge-TCT method before and after neutron irradiation. The test structures were produced for investigation of CMOS technology in tracking detectors for experiments at HL-LHC upgrade. Measurements were made with passive detector structures in which current pulses induced on charge collecting electrodes could be directly observed. Thickness of depleted layer was estimated and studied as function of neutron irradiation fluence. An increase of depletion thickness was observed after first two irradiation steps to 1$\cdot$10$^{13}$ n/cm$^{2}$ and 5$\cdot$10$^{13}$ n/cm$^{2}$ and attributed to initial acceptor removal. At higher fluences the depletion thickness at given voltage decreases with increasing fluence because of radiation induced defects contributing to the effective space charge concentration. The behaviour is consistent with that of high resistivity silicon used for standard particle detectors. The measured thickness of the depleted layer after irradiation with 1$\cdot$10$^{15}$ n/cm$^{2}$ is more than 50 $μ$m at 100 V bias. This is sufficient to guarantee satisfactory signal/noise performance on outer layers of pixel trackers in HL-LHC experiments.

physics.ins-det↗