arXiv subjects

Bolin Liao

Publications and source records attributed to Bolin Liao.

65 records · Page 4Linked to original sources

arXiv2017

Spatial-Temporal Imaging of Anisotropic Photocarrier Dynamics in Black Phosphorus

As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its widely tunable bandgap, polarization dependent photoresponse and highly anisotropic in-plane charge transport. Despite extensive study of the steady-state charge transport in BP, there has not been direct characterization and visualization of the hot carriers dynamics in BP immediately after photoexcitation, which is crucial to understanding the performance of BP-based optoelectronic devices. Here we use the newly developed scanning ultrafast electron microscopy (SUEM) to directly visualize the motion of photo-excited hot carriers on the surface of BP in both space and time. We observe highly anisotropic in-plane diffusion of hot holes, with a 15-times higher diffusivity along the armchair (x-) direction than that along the zigzag (y-) direction. Our results provide direct evidence of anisotropic hot carrier transport in BP and demonstrate the capability of SUEM to resolve ultrafast hot carrier dynamics in layered two-dimensional materials.

cond-mat.mtrl-sci↗

arXiv2016

First-principles mode-by-mode analysis for electron-phonon scattering channels and mean free path spectra in GaAs

We present a first-principles framework to investigate the electron scattering channels and transport properties for polar material by combining the exact solution of linearized electron-phonon (e-ph) Boltzmann transport equation in its integral-differential form associated with the e-ph coupling matrices obtained from polar Wannier interpolation scheme. No ad hoc parameter is required throughout this calculation, and GaAs, a well-studied polar material, is used as an example to demonstrate this method. In this work, the long-range and short-range contributions as well as the intravalley and intervalley transitions in the e-ph interactions (EPIs) have been quantitatively addressed. Promoted by such mode-by-mode analysis, we find that in GaAs, the piezoelectric scattering is comparable to deformation-potential scattering for electron scatterings by acoustic phonons in EPI even at room temperature and makes a significant contribution to mobility. Furthermore, we achieved good agreements with experimental data for the mobility, and identified that electrons with mean free paths between 130 and 210 nm contribute dominantly to the electron transport at 300 K. Such information provides deeper understandings on the electron transport in GaAs, and the presented framework can be readily applied to other polar materials.

cond-mat.mtrl-sci↗

arXiv2016

Dynamics of Photo-excited Hot Carriers in Hydrogenated Amorphous Silicon Imaged by 4D Electron Microscopy

The dynamics of charge carriers in amorphous semiconductors fundamentally differ from those in crystalline semiconductors due to the lack of long-range order and the high defect density. Despite intensive technology-driven research interests and the existence of well-established experimental techniques, such as photoconductivity time-of-flight and ultrafast optical measurements, many aspects of the dynamics of photo-excited charge carriers in amorphous semiconductors remain poorly understood. Here we demonstrate direct imaging of carrier dynamics in space and time after photo-excitation in hydrogenated amorphous silicon (a-Si:H) by scanning ultrafast electron microscopy (SUEM). We observe an unexpected regime of fast diffusion immediately after photoexcitation along with spontaneous electron-hole separation and charge trapping induced by the atomic disorder. Our findings demonstrate the rich dynamics of hot carrier transport in amorphous semiconductors that can be revealed by direct imaging based on SUEM.

cond-mat.mtrl-sci↗

arXiv2016

Entropic and Near-Field Improvements of Thermoradiative Cells

A p-n junction maintained at above ambient temperature can work as a heat engine, converting some of the supplied heat into electricity and rejecting entropy by interband emission. Such thermoradiative cells have potential to harvest low-grade heat into electricity. By analyzing the entropy content of different spectral components of thermal radiation, we identify an approach to increase the efficiency of thermoradiative cells via spectrally selecting long-wavelength photons for radiative exchange. Furthermore, we predict that the near-field photon extraction by coupling photons generated from interband electronic transition to phonon polariton modes on the surface of a heat sink can increase the conversion efficiency as well as the power generation density, providing more opportunities to efficiently utilize terrestrial emission for clean energy. An ideal InSb thermoradiative cell can achieve a maximum efficiency and power density up to 20.4 % and 327 Wm-2, respectively, between a hot source at 500K and a cold sink at 300K. However, sub-bandgap and non-radiative losses will significantly degrade the cell performance.

cond-mat.mtrl-sci↗

arXiv2016

Heat meets light on the nanoscale

We discuss the state-of-the-art and remaining challenges in the fundamental understanding and technology development for controlling light-matter interactions in nanophotonic environments in and away from thermal equilibrium. The topics covered range from the basics of the thermodynamics of light emission and absorption, to applications in solar-thermal energy generation, thermophotovoltaics, optical refrigeration, personalized cooling technologies, development of coherent incandescent light sources, and spinoptics.

physics.optics↗

arXiv2015

Ab initio optimization of phonon drag effect for lower-temperature thermoelectric energy conversion

While the thermoelectric figure of merit zT above 300K has seen significant improvement recently, the progress at lower temperatures has been slow, mainly limited by the relatively low Seebeck coefficient and high thermal conductivity. Here we report, for the first time, success in first-principles computation of the phonon drag effect - a coupling phenomenon between electrons and non-equilibrium phonons - in heavily doped region and its optimization to enhance the Seebeck coefficient while reducing the phonon thermal conductivity by nanostructuring. Our simulation quantitatively identifies the major phonons contributing to the phonon drag, which are spectrally distinct from those carrying heat, and further reveals that while the phonon drag is reduced in heavily-doped samples, a significant contribution to Seebeck coefficient still exists. An ideal phonon filter is proposed to enhance zT of silicon at room temperature by a factor of 20 to around 0.25, and the enhancement can reach 70 times at 100K. This work opens up a new venue towards better thermoelectrics by harnessing non-equilibrium phonons.

cond-mat.mtrl-sci↗

arXiv2015

Limiting efficiencies of solar energy conversion and photo-detection via internal emission of hot electrons and hot holes in gold

We evaluate the limiting efficiency of full and partial solar spectrum harvesting via the process of internal photoemission in Au-semiconductor Schottky junctions. Our results based on the ab initio calculations of the electron density of states (e-DOS) reveal that the limiting efficiency of the full-spectrum Au converter based on hot electron injection is below 4%. This value is even lower than previously established limit based on the parabolic approximation of the Au electron energy bands. However, we predict limiting efficiency exceeding 10% for the hot holes collection through the Schottky junction between Au and p-type semiconductor. Furthermore, we demonstrate that such converters have more potential if used as a part of the hybrid system for harvesting high- and low-energy photons of the solar spectrum.

physics.optics↗

arXiv2015

Ab initio study of electron-phonon interaction in phosphorene

The monolayer of black phosphorous, or phosphorene, has recently emerged as a new 2D semiconductor with intriguing highly anisotropic transport properties. Existing calculations of its intrinsic phonon-limited electronic transport properties so far rely on the deformation potential approximation, which is in general not directly applicable to anisotropic materials since the deformation along one specific direction can scatter electrons traveling in all directions. We perform a first-principles calculation of the electron-phonon interaction in phosphorene based on density functional perturbation theory and Wannier interpolation. Our calculation reveals that 1) the high anisotropy provides extra phase space for electron-phonon scattering, and 2) optical phonons have appreciable contributions. Both effects cannot be captured by the deformation potential calculations.

cond-mat.mtrl-sci↗

arXiv2015

First-Principles Simulation of Electron Mean-Free-Path Spectra and Thermoelectric Properties in Silicon

The mean-free-paths (MFPs) of energy carriers are of critical importance to the nano-engineering of better thermoelectric materials. Despite significant progress in the first-principles-based understanding of the spectral distribution of phonon MFPs in recent years, the spectral distribution of electron MFPs remains unclear. In this work, we compute the energy dependent electron scatterings and MFPs in silicon from first-principles. The electrical conductivity accumulation with respect to electron MFPs is compared to that of the phonon thermal conductivity accumulation to illustrate the quantitative impact of nanostructuring on electron and phonon transport. By combining all electron and phonon transport properties from first-principles, we predict the thermoelectric properties of the bulk and nanostructured silicon, and find that silicon with 20 nm nanograins can result in more than five times enhancement in their thermoelectric figure of merit as the grain boundaries scatter phonons more significantly than that of electrons due to their disparate MFP distributions.

cond-mat.mtrl-sci↗

arXiv2014

Significant reduction of lattice thermal conductivity by electron-phonon interaction in silicon with high carrier concentrations: a first-principles study

Electron-phonon interaction has been well known to create major resistance to electron transport in metals and semiconductors, whereas less studies were directed to its effect on the phonon transport, especially in semiconductors. We calculate the phonon lifetimes due to scattering with electrons (or holes), combine them with the intrinsic lifetimes due to the anharmonic phonon-phonon interaction, all from first-principles, and evaluate the effect of the electron-phonon interaction on the lattice thermal conductivity of silicon. Unexpectedly, we find a significant reduction of the lattice thermal conductivity at room temperature as the carrier concentration goes above 1e19 cm-3 (the reduction reaches up to 45% in p-type silicon at around 1e21 cm-3), a range of great technological relevance to thermoelectric materials.

cond-mat.mtrl-sci↗

arXiv2014

Generalized two-temperature model for coupled phonon-magnon diffusion

We generalize the two-temperature model [Sanders and Walton, Phys. Rev. B, 15, 1489 (1977)] for coupled phonon-magnon diffusion to include the effect of the concurrent magnetization flow. Working within the framework of Boltzmann transport equation, we derive the constitutive equations for coupled phonon-magnon transport driven by gradients of both temperature and external magnetic fields, and the corresponding conservation laws. Our equations reduce to the original Sanders-Walton two-temperature model under a uniform external field, but predict a new magnon cooling effect driven by a non-uniform magnetic field in a homogeneous single-domain ferromagnet. We estimate the magnitude of the cooling effect in yttrium iron garnet, and show it is within current experimental reach. With properly optimized materials, the predicted cooling effect can potentially supplement the conventional magnetocaloric effect in cryogenic applications in the future.

cond-mat.mes-hall↗