arXiv subjects

Boris I. Yakobson

Publications and source records attributed to Boris I. Yakobson.

At least 55 records · Page 3Linked to original sources

arXiv2014

Kinetically determined shapes of grain boundaries in CVD graphene

Predicting the shape of grain boundaries is essential to control results of the growth of large graphene crystals. A global energy minimum search predicting the most stable final structure contradicts experimental observations. Here we present Monte Carlo simulation of kinetic formation of grain boundaries (GB) in graphene during collision of two growing graphene flakes. Analysis of the resulting GBs for the full range of misorientation angles $α$ allowed us to identify a hidden (from post facto analysis such as microscopy) degree of freedom - the edge misorientation angle $β$. Edge misorientation characterizes initial structure rather than final structure and therefore provides more information about growth conditions. Use of $β$ enabled us to explain disagreements between the experimental observations and theoretical work. Finally, we report an analysis of an interesting special case of zero-tilt GBs for which structure is determined by two variables describing the relative shift of initial islands. We thereby present analysis of the full range of tilt GB ( $β\neq$ 0) and translational GB ( $β$ = 0). Based on our findings we propose strategies of controlling the GB morphology in experiments, which paves the way to a better control over graphene structure and properties for advanced applications.

cond-mat.mtrl-sci↗

arXiv2014

Many-body and spin-orbit effects on direct-indirect band gap transition of strained monolayer MoS$_2$ and WS$_2$

Monolayer transition metal dichalcogenides are promising materials for photoelectronic devices. Among them, molybdenum disulphide (MoS$_2$) and tungsten disulphide (WS$_2$) are some of the best candidates due to their favorable band gap values and band edge alignments. Here we consider various perturbative corrections to the DFT electronic structure, e.g. GW, spin-orbit coupling, as well as many-body excitonic and trionic effects, and calculate accurate band gaps as a function of homogeneous strain in these materials. We show that all of these corrections are of comparable magnitudes and need to be included in order to obtain an accurate electronic structure. We calculate the strain at which the direct-to-indirect gap transition occurs. After considering all contributions, the direct to indirect gap transition strain is found to be at 2.7% in MoS$_2$ and 3.9% in WS$_2$. These values are generally higher than the previously reported theoretical values.

cond-mat.mtrl-sci↗

arXiv2014

Assessing carbon-based anodes for lithium-ion batteries: A universal description of charge-transfer binding

Many key performance characteristics of carbon-based lithium-ion battery anodes are largely determined by the strength of binding between lithium (Li) and sp2 carbon (C), which can vary significantly with subtle changes in substrate structure, chemistry, and morphology. Here, we use density functional theory calculations to investigate the interactions of Li with a wide variety of sp2 C substrates, including pristine, defective, and strained graphene; planar C clusters; nanotubes; C edges; and multilayer stacks. In almost all cases, we find a universal linear relation between the Li-C binding energy and the work required to fill previously unoccupied electronic states within the substrate. This suggests that Li capacity is predominantly determined by two key factors -- namely, intrinsic quantum capacitance limitations and the absolute placement of the Fermi level. This simple descriptor allows for straightforward prediction of the Li-C binding energy and related battery characteristics in candidate C materials based solely on the substrate electronic structure. It further suggests specific guidelines for designing more effective C-based anodes. The method should be broadly applicable to charge-transfer adsorption on planar substrates, and provides a phenomenological connection to established principles in supercapacitor and catalyst design.

cond-mat.mes-hall↗

arXiv2014

Why do nanotubes grow chiral?

Carbon nanotubes (CNT) hold enormous technological promise. It can only be harnessed if one controls in a practical way the CNT chirality, the feature of the tubular carbon topology that governs all the CNT properties---electronic, optical, mechanical. Experiments in catalytic growth over the last decade have repeatedly revealed a puzzling strong preference towards minimally-chiral (near-armchair) CNT, challenging any existing hypotheses and turning chirality control ever more tantalizing yet leaving its understanding elusive. Here we combine the CNT/catalyst interface thermodynamics with the kinetic growth theory to show that the unusual near-armchair peaks emerge from the two antagonistic trends: energetic preference towards achiral CNT/catalyst interfaces vs. faster growth of chiral CNT. This narrow distribution is profoundly related with the peaked behavior of a simple function, x*exp(-x).

cond-mat.mtrl-sci↗

arXiv2014

Site-Percolation Threshold of Carbon Nanotube Fibers: Fast Inspection of Percolation with Markov Stochastic Theory

We present a site-percolation model based on a modified FCC lattice, as well as an efficient algorithm of inspecting percolation which takes advantage of the Markov stochastic theory, in order to study the percolation threshold of carbon nanotube (CNT) fibers. Our Markov-chain based algorithm carries out the inspection of percolation by performing repeated sparse matrix-vector multiplications, which allows parallelized computation to accelerate the inspection for a given configuration. With this approach, we determine that the site-percolation transition of CNT fibers occurs at p_c =0.1533+-0.0013, and analyze the dependence of the effective percolation threshold (corresponding to 0.5 percolation probability) on the length and the aspect ratio of a CNT fiber on a finite-size-scaling basis. We also discuss the aspect ratio dependence of percolation probability with various values of p (not restricted to p_c).

cond-mat.stat-mech↗

arXiv2013

Probing the Synthesis of Two-Dimensional Boron by First-Principles Computations

Boron synthesis, in theory: Although two-dimensional boron sheets have attracted considerable interest because of their theoretically predicted properties, synthesis of such sheets remains a challenge. The feasibility of different synthetic methods for two-dimensional boron sheets was assessed using first-principles calculations, possibly paving the way towards its application in nanoelectronics.

cond-mat.mes-hall↗

arXiv2013

Carbyne from first principles: Chain of C atoms, a nanorod or a nanorope?

We report an extensive study of the properties of carbyne using first-principles calculations. We investigate carbyne's mechanical response to tension, bending, and torsion deformations. Under tension, carbyne is about twice as stiff as the stiffest known materials and has an unrivaled specific strength of up to 7.5*10^7 Nm/kg, requiring a force of ~10 nN to break a single atomic chain. Carbyne has a fairly large room-temperature persistence length of about 14 nm. Surprisingly, the torsional stiffness of carbyne can be zero but can be 'switched on' by appropriate functional groups at the ends. Further, under appropriate termination, carbyne can be switched into a magnetic-semiconductor state by mechanical twisting. We reconstruct the equivalent continuum-elasticity representation, providing the full set of elastic moduli for carbyne, showing its extreme mechanical performance (e.g. a nominal Young's modulus of 32.7 TPa with an effective mechanical thickness of 0.772 A). We also find an interesting coupling between strain and band gap of carbyne, which is strongly increased under tension, from 3.2 to 4.4 eV under a 10% strain. Finally, we study the performance of carbyne as a nanoscale electrical cable, and estimate its chemical stability against self-aggregation, finding an activation barrier of 0.6 eV for the carbyne-carbyne cross-linking reaction and an equilibrium cross-link density for two parallel carbyne chains of 1 cross-link per 17 C atoms (2.2 nm).

cond-mat.mtrl-sci↗

arXiv2013

Feasibility of Lithium Storage on Graphene and Its Derivatives

Nanomaterials are anticipated to be promising storage media, owing to their high surface-to-mass ratio. The high hydrogen capacity achieved by using graphene has reinforced this opinion and motivated investigations of the possibility to use it to store another important energy carrier - lithium (Li). While the first-principles computations show that the Li capacity of pristine graphene, limited by Li clustering and phase separation, is lower than that offered by Li intercalation in graphite, we explore the feasibility of modifying graphene for better Li storage. It is found that certain structural defects in graphene can bind Li stably, yet more efficacious approach is through substitution doping with boron (B). In particular, the layered C3B compound stands out as a promising Li storage medium. The monolayer C3B has a capacity of 714 mAh/g (as Li1.25C3B), and the capacity of stacked C3B is 857 mAh/g (as Li1.5C3B), which is about twice as large as graphite's 372 mAh/g (as LiC6). Our results help clarify the mechanism of Li storage in low-dimensional materials, and shed light on the rational design of nano-architectures for energy storage.

cond-mat.mtrl-sci↗

arXiv2013

Constructing Metallic Nanoroad on MoS2 Monolayer via Hydrogenation

Monolayer transition metal dichalcogenides recently emerge as a new family of two-dimensional material potentially suitable for numerous applications in electronic and optoelectronic devices due to the presence of finite band gap. Many proposed applications require efficient transport of charge carriers within these semiconducting monolayers. However, how to construct a stable conducting nanoroad on these atomically thin semiconductors is still a challenge. Here we demonstrate that hydrogenation on the surface of MoS2 monolayer induces a semiconductor-metal transition, and strip-patterned hydrogenation is able to generate a conducting nanoroad. The band-gap closing arises from the formation of in-gap hybridized states mainly consisting of Mo 4d orbitals, as well as the electron donation from hydrogen to the lattice host. Ballistic conductance calculations reveal that such a nanoroad on the MoS2 surface exhibits an integer conductance, indicating small carrier scattering, and thus is ideal for serving as a conducting channel or interconnect without compromising the mechanical and structural integrity of the monolayer.

cond-mat.mtrl-sci↗

arXiv2013

Intrinsic Magnetism of Grain Boundaries in Two-dimensional Metal Dichalcogenides

Grain boundaries (GBs) are structural imperfections that typically degrade the performance of materials. Here we show that dislocations and GBs in two-dimensional (2D) metal dichalcogenides MX2 (M = Mo, W; X = S, Se) can actually improve the material by giving it a qualitatively new physical property: magnetism. The dislocations studied all have a substantial magnetic moment of ~1 Bohr magneton. In contrast, dislocations in other well-studied 2D materials are typically non-magnetic. GBs composed of pentagon-heptagon pairs interact ferromagnetically and transition from semiconductor to half-metal or metal as a function of tilt angle and/or doping level. When the tilt angle exceeds 47° the structural energetics favor square-octagon pairs and the GB becomes an antiferromagnetic semiconductor. These exceptional magnetic properties arise from an interplay of dislocation-induced localized states, doping, and locally unbalanced stoichiometry. Purposeful engineering of topological GBs may be able to convert MX2 into a promising 2D magnetic semiconductor.

cond-mat.mtrl-sci↗

arXiv2013

Mechanically induced metal-insulator transition in carbyne

First-principles calculations for carbyne under strain predict that the Peierls transition from symmetric cumulene to broken-symmetry polyyne structure is enhanced as the material is stretched. Interpretation within a simple and instructive analytical model suggests that this behavior is valid for arbitrary 1D metals. Further, numerical calculations of the anharmonic quantum vibrational structure of carbyne show that zero-point atomic vibrations alone eliminate the Peierls distortion in a mechanically free chain, preserving the cumulene symmetry. The emergence and increase of Peierls dimerization under tension then implies a qualitative transition between the two forms, which our computations place around 3% strain. Thus, zero-point vibrations and mechanical strain jointly produce a change in symmetry resulting in the transition from metallic to insulating state. In any practical realization, it is important that the effect is also chemically modulated by the choice of terminating groups. Our findings are promising for applications such as electromechanical switching and band gap tuning via strain, and besides carbyne itself, they directly extend to numerous other systems that show Peierls distortion.

cond-mat.mtrl-sci↗

arXiv2013

Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2

The quasiparticle (QP) band structures of both strainless and strained monolayer MoS$_{2}$ are investigated using more accurate many body perturbation \emph{GW} theory and maximally localized Wannier functions (MLWFs) approach. By solving the Bethe-Salpeter equation (BSE) including excitonic effects on top of the partially self-consistent \emph{GW$_{0}$} (sc\emph{GW$_{0}$}) calculation, the predicted optical gap magnitude is in a good agreement with available experimental data. With increasing strain, the exciton binding energy is nearly unchanged, while optical gap is reduced significantly. The sc\emph{GW$_{0}$} and BSE calculations are also performed on monolayer WS$_{2}$, similar characteristics are predicted and WS$_{2}$ possesses the lightest effective mass at the same strain among monolayers Mo(S,Se) and W(S,Se). Our results also show that the electron effective mass decreases as the tensile strain increases, resulting in an enhanced carrier mobility. The present calculation results suggest a viable route to tune the electronic properties of monolayer transition-metal dichalcogenides (TMDs) using strain engineering for potential applications in high performance electronic devices.

cond-mat.mtrl-sci↗

arXiv2013

Vapor Phase Growth and Grain Boundary Structure of Molybdenum Disulfide Atomic Layers

Single layered molybdenum disulfide with a direct bandgap is a promising two-dimensional material that goes beyond graphene for next generation nanoelectronics. Here, we report the controlled vapor phase synthesis of molybdenum disulfide atomic layers and elucidate a fundamental mechanism for the nucleation, growth, and grain boundary formation in its crystalline monolayers. Furthermore, a nucleation-controlled strategy is established to systematically promote the formation of large-area single- and few-layered films. The atomic structure and morphology of the grains and their boundaries in the polycrystalline molybdenum disulfide atomic layers are examined and first-principles calculations are applied to investigate their energy landscape. The electrical properties of the atomic layers are examined and the role of grain boundaries is evaluated. The uniformity in thickness, large grain sizes, and excellent electrical performance of these materials signify the high quality and scalable synthesis of the molybdenum disulfide atomic layers.

cond-mat.mtrl-sci↗

arXiv2012

Dislocations and Grain Boundaries in Two-Dimensional Boron Nitride

A new dislocation structure-square-octagon pair (4|8) is discovered in two-dimensional boron nitride (h-BN), via first-principles calculations. It has lower energy than corresponding pentagon-heptagon pairs (5|7), which contain unfavorable homo-elemental bonds. Based on the structures of dislocations, grain boundaries (GB) in BN are investigated. Depending on the tilt angle of grains, GB can be either polar (B-rich or N-rich), constituted by 5|7s, or un-polar, composed of 4|8s. The polar GBs carry net charges, positive at B-rich and negative at N-rich ones. In contrast to GBs in graphene which generally impede the electronic transport, polar GBs have smaller bandgap compared to perfect BN, which may suggest interesting electronic and optic applications.

cond-mat.mtrl-sci↗

arXiv2011

Graphene Nucleation on Transition Metal Surface: Structure Transformation and Role of the Metal Step Edge

The nucleation of graphene on a transition metal (TM) surface, either on a terrace or near a step edge, is systematically explored using density functional theory (DFT) calculations and applying the two-dimensional (2D) crystal nucleation theory. Careful optimization of the supported carbon clusters, CN (with size N ranging from 1 to 24), on the Ni(111) surface indicates a ground state structure transformation from a one-dimensional (1D) C chain to a two-dimensional (2D) sp2 C network at N ~ 10-12. Furthermore, the crucial parameters controlling graphene growth on the metal surface, nucleation barrier, nucleus size, and the nucleation rate on a terrace or near a step edge, are calculated. In agreement with numerous experimental observations, our analysis shows that graphene nucleation near a metal step edge is superior to that on a terrace. Based on our analysis, we propose the use of seeded graphene to synthesize high-quality graphene in large area.

cond-mat.mtrl-sci↗

arXiv2011

The influence of size effect on the electronic and elastic properties of diamond films with nanometer thickness

The atomic structure and physical properties of few-layered <111> oriented diamond nanocrystals (diamanes), covered by hydrogen atoms from both sides are studied using electronic band structure calculations. It was shown that energy stability linear increases upon increasing of the thickness of proposed structures. All 2D carbon films display direct dielectric band gaps with nonlinear quantum confinement response upon the thickness. Elastic properties of diamanes reveal complex dependence upon increasing of the number of <111> layers. All theoretical results were compared with available experimental data.

cond-mat.mtrl-sci↗

arXiv2011

Patterning Nanoroads and Quantum Dots on Fluorinated Graphene

Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable. The fluorinated graphene is an insulator and turns out to be a perfect matrix-host for patterning nanoroads and quantum dots of pristine graphene. The electronic and magnetic properties of the nanoroads can be tuned by varying the edge orientation and width. The energy gaps between the highest occupied and lowest unoccupied molecular orbitals (HOMO-LUMO) of quantum dots are size-dependent and show a confinement typical of Dirac fermions. Furthermore, we study the effect of different basic coverage of F on graphene (with stoichiometries CF and C$_{4}$F) on the band gaps, and show the suitability of these materials to host quantum dots of graphene with unique electronic properties.

cond-mat.mtrl-sci↗

arXiv2011

BN white graphene with `colorful' edges--the energies and morphology

Interfaces play a key role in low dimensional materials like graphene or its boron nitrogen analog, white graphene. The edge energy of h-BN has not been reported as its lower symmetry makes it difficult to separate the opposite B-rich and N-rich zigzag sides. We report unambiguous energy values for arbitrary edges of BN, including the dependence on the elemental chemical potentials of B and N species. A useful manifestation of the additional Gibbs degree of freedom in the binary system, this dependence offers a way to control the morphology of pure BN or its carbon inclusions, and to engineer their electronic and magnetic properties.

cond-mat.mtrl-sci↗