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Bosong Sun

Publications and source records attributed to Bosong Sun.

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Evidence for equilibrium excitons and exciton condensation in monolayer WTe2

A single monolayer of the layered semimetal WTe2 behaves as a two-dimensional topological insulator, with helical conducting edge modes surrounding a bulk state that becomes insulating at low temperatures. Here we present evidence that the bulk state has a very unusual nature, containing electrons and holes bound by Coulomb attraction (excitons) that spontaneously form in thermal equilibrium. On cooling from room temperature to 100 K the conductivity develops a V-shaped dependence on electrostatic doping, while the chemical potential develops a ~43 meV step at the neutral point. These features are much sharper than is possible in an independent-electron picture, but they can be largely accounted for by positing that some of the electrons and holes are paired in equilibrium. Our calculations from first principles show that the exciton binding energy is larger than 100 meV and the radius as small as 4 nm, explaining their formation at high temperature and doping levels. Below 100 K more strongly insulating behavior is seen, suggesting that a charge-ordered state forms. The observed absence of charge density waves in this state appears surprising within an excitonic insulator picture, but we show that it can be explained by the symmetries of the exciton wave function. Monolayer WTe2 therefore presents an exceptional combination of topological properties and strong correlations over a wide temperature range.

cond-mat.str-el

Determination of the spin axis in quantum spin Hall insulator monolayer WTe2

Evidence for the quantum spin Hall (QSH) effect has been reported in several experimental systems in the form of approximately quantized edge conductance. However, the most fundamental feature of the QSH effect, spin-momentum locking in the edge channels, has never been demonstrated experimentally. Here, we report clear evidence for spin-momentum locking in the edge channels of monolayer WTe2, thought to be a two-dimensional topological insulator (2D TI). We observe that the edge conductance is controlled by the component of an applied magnetic field perpendicular to a particular axis, which we identify as the spin axis. The axis is the same for all edges, situated in the mirror plane perpendicular to the tungsten chains at 40$\pm$2° to the layer normal, implying that the spin-orbit coupling is inherited from the bulk band structure. We show that this finding is consistent with theory if the band-edge orbitals are taken to have like parity. We conclude that this parity assignment is correct and that both edge states and bulk bands in monolayer WTe2 share the same simple spin structure. Combined with other known features of the edge states this establishes spin-momentum locking, and therefore that monolayer WTe2 is truly a natural 2D TI.

cond-mat.mes-hall

Magnetic proximity and nonreciprocal current switching in a monolayer WTe2 helical edge

The integration of diverse electronic phenomena, such as magnetism and nontrivial topology, into a single system is normally studied either by seeking materials that contain both ingredients, or by layered growth of contrasting materials. The ability to simply stack very different two dimensional (2D) van der Waals materials in intimate contact permits a different approach. Here we use this approach to couple the helical edges states in a 2D topological insulator, monolayer WTe2, to a 2D layered antiferromagnet, CrI3. We find that the edge conductance is sensitive to the magnetization state of the CrI3, and the coupling can be understood in terms of an exchange field from the nearest and next-nearest CrI3 layers that produces a gap in the helical edge. We also find that the nonlinear edge conductance depends on the magnetization of the nearest CrI3 layer relative to the current direction. At low temperatures this produces an extraordinarily large nonreciprocal current that is switched by changing the antiferromagnetic state of the CrI3.

cond-mat.mes-hall

Switching 2D Magnetic States via Pressure Tuning of Layer Stacking

The physical properties of two-dimensional van der Waals (2D vdW) crystals depend sensitively on the interlayer coupling, which is intimately connected to the stacking arrangement and the interlayer spacing. For example, simply changing the twist angle between graphene layers can induce a variety of correlated electronic phases, which can be controlled further in a continuous manner by applying hydrostatic pressure to decrease the interlayer spacing. In the recently discovered 2D magnets, theory suggests that the interlayer exchange coupling strongly depends on layer separation, while the stacking arrangement can even change the sign of the magnetic exchange, thus drastically modifying the ground state. Here, we demonstrate pressure tuning of magnetic order in the 2D magnet CrI3. We probe the magnetic states using tunneling and scanning magnetic circular dichroism microscopy measurements. We find that the interlayer magnetic coupling can be more than doubled by hydrostatic pressure. In bilayer CrI3, pressure induces a transition from layered antiferromagnetic to ferromagnetic phases. In trilayer CrI3, pressure can create coexisting domains of three phases, one ferromagnetic and two distinct antiferromagnetic. The observed changes in magnetic order can be explained by changes in the stacking arrangement. Such coupling between stacking order and magnetism provides ample opportunities for designer magnetic phases and functionalities.

cond-mat.mes-hall

Ferroelectric switching of a two-dimensional metal

A ferroelectric is a material with a polar structure whose polarity can be reversed by applying an electric field. In metals, the itinerant electrons tend to screen electrostatic forces between ions, helping to explain why polar metals are very rare. Screening also excludes external electric fields, apparently ruling out the possibility of polarity reversal and thus ferroelectric switching. In principle, however, a thin enough polar metal could be penetrated by an electric field sufficiently to be switched. Here we show that the layered topological semimetal WTe2 provides the first embodiment of this principle. Although monolayer WTe2 is centrosymmetric and thus nonpolar, the stacked bulk structure is polar. We find that two- or three-layer WTe2 exhibits a spontaneous out-of-plane electric polarization which can be switched using gate electrodes. We directly detect and quantify the polarization using graphene as an electric field sensor. Moreover, the polarization states can be differentiated by conductivity, and the carrier density can be varied to modify the properties. The critical temperature is above 350 K, and even when WTe2 is sandwiched in graphene it retains its switching capability at room temperature, demonstrating a robustness suitable for applications in combination with other two-dimensional materials.

cond-mat.mtrl-sci

Imaging Quantum Spin Hall Edges in Monolayer WTe2

A two-dimensional (2D) topological insulator (TI) exhibits the quantum spin Hall (QSH) effect, in which topologically protected spin-polarized conducting channels exist at the sample edges. Experimental signatures of the QSH effect have recently been reported for the first time in an atomically thin material, monolayer WTe2. Electrical transport measurements on exfoliated samples and scanning tunneling spectroscopy on epitaxially grown monolayer islands signal the existence of edge modes with conductance approaching the quantized value. Here, we directly image the local conductivity of monolayer WTe2 devices using microwave impedance microscopy, establishing beyond doubt that conduction is indeed strongly localized to the physical edges at temperatures up to 77 K and above. The edge conductivity shows no gap as a function of gate voltage, ruling out trivial conduction due to band bending or in-gap states, and is suppressed by magnetic field as expected. Interestingly, we observe additional conducting lines and rings within most samples which can be explained by edge states following boundaries between topologically trivial and non-trivial regions. These observations will be critical for interpreting and improving the properties of devices incorporating WTe2 or other air-sensitive 2D materials. At the same time, they reveal the robustness of the QSH channels and the potential to engineer and pattern them by chemical or mechanical means in the monolayer material platform.

cond-mat.mes-hall

Edge conduction in monolayer WTe2

A two-dimensional topological insulator (2DTI) is guaranteed to have a helical 1D edge mode in which spin is locked to momentum, producing the quantum spin Hall effect and prohibiting elastic backscattering at zero magnetic field. No monolayer material has yet been shown to be a 2DTI, but recently the Weyl semimetal WTe2 was predicted to become a 2DTI in monolayer form if a bulk gap opens. Here, we report that at temperatures below about 100 K monolayer WTe2 does become insulating in its interior, while the edges still conduct. The edge conduction is strongly suppressed by in-plane magnetic field and is independent of gate voltage, save for mesoscopic fluctuations that grow on cooling due to a zero-bias anomaly which reduces the linear-response conductance. Bilayer WTe2 also becomes insulating at low temperatures but does not show edge conduction. Many of these observations are consistent with monolayer WTe2 being a 2DTI. However, the low temperature edge conductance, for contacts spacings down to 150 nm, is below the quantized value,

cond-mat.mes-hall