arXiv subjects

Boyang Zhao

Publications and source records attributed to Boyang Zhao.

31 records · Page 2Linked to original sources

arXiv2024

Molten flux growth of single crystals of quasi-1D hexagonal chalcogenide BaTiS3

BaTiS3, a quasi-1D complex chalcogenide, has gathered considerable scientific and technological interest due to its giant optical anisotropy and electronic phase transitions. However, the synthesis of high-quality BaTiS3 crystals, particularly those featuring crystal sizes of millimeters or larger, remains a challenge. Here, we investigate the growth of BaTiS3 crystals utilizing a molten salt flux of either potassium iodide, or a mixture of barium chloride and barium iodide. The crystals obtained through this method exhibit a substantial increase in volume compared to those synthesized via the chemical vapor transport method, while preserving their intrinsic optical and electronic properties. Our flux growth method provides a promising route towards the production of high-quality, large-scale single crystals of BaTiS3, which will greatly facilitate advanced characterizations of BaTiS3 and its practical applications that require large crystal dimensions. Additionally, our approach offers an alternative synthetic route for other emerging complex chalcogenides.

cond-mat.mtrl-sci↗

arXiv2024

Infrared Optical Anisotropy in Quasi-1D Hexagonal Chalcogenide BaTiSe3

Polarimetric infrared detection bolsters IR thermography by leveraging the polarization of light. Optical anisotropy, i.e., birefringence and dichroism, can be leveraged to achieve polarimetric detection. Recently, giant optical anisotropy was discovered in quasi-1D narrow-bandgap hexagonal perovskite sulfides, A1+xTiS3, specifically BaTiS3[1,2] and Sr9/8TiS3[3,4]. In these materials, the critical role of atomic-scale structure modulations[4,5] in the unconventional electrical[5,6], optical[7,8], and thermal[7,9] properties raises the broader question of other materials that belong to this family. To address this issue, for the first time, we synthesized high-quality single crystals of a largely unexplored member of the A1+xTiX3 (X = S, Se) family, BaTiSe3. Single-crystal X-ray diffraction determined the room-temperature structure with the P31c space group, which is a superstructure of the earlier reported[10] P63/mmc structure. The crystal structure of BaTiSe3 features antiparallel c-axis displacements similar to BaTiS3,[2] but is of lower symmetry. Polarization-resolved Raman and Fourier transform infrared (FTIR) spectroscopy were used to characterize the optical anisotropy of BaTiSe3, whose refractive index along the ordinary (perpendicular to c) and extraordinary (parallel to c) optical axes was quantitatively determined by combining ellipsometry studies with FTIR. With a giant birefringence Δn~0.9, BaTiSe3 emerges as a new candidate for miniaturized birefringent optics for mid-wave infrared to long-wave infrared imaging.

cond-mat.mtrl-sci↗

arXiv2023

Photoconductive Effects in Single Crystals of BaZrS$_3$

Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.

physics.app-ph↗

arXiv2023

Colossal optical anisotropy from atomic-scale modulations

In modern optics, materials with large birefringence (Δn, where n is the refractive index) are sought after for polarization control (e.g. in wave plates, polarizing beam splitters, etc.), nonlinear optics and quantum optics (e.g. for phase matching and production of entangled photons), micromanipulation, and as a platform for unconventional light-matter coupling, such as Dyakonov-like surface polaritons and hyperbolic phonon polaritons. Layered "van der Waals" materials, with strong intra-layer bonding and weak inter-layer bonding, can feature some of the largest optical anisotropy; however, their use in most optical systems is limited because their optic axis is out of the plane of the layers and the layers are weakly attached, making the anisotropy hard to access. Here, we demonstrate that a bulk crystal with subtle periodic modulations in its structure -- Sr9/8TiS3 -- is transparent and positive-uniaxial, with extraordinary index n_e = 4.5 and ordinary index n_o = 2.4 in the mid- to far-infrared. The excess Sr, compared to stoichiometric SrTiS3, results in the formation of TiS6 trigonal-prismatic units that break the infinite chains of face-shared TiS6 octahedra in SrTiS3 into periodic blocks of five TiS6 octahedral units. The additional electrons introduced by the excess Sr subsequently occupy the TiS6 octahedral blocks to form highly oriented and polarizable electron clouds, which selectively boost the extraordinary index n_e and result in record birefringence (Δn > 2.1 with low loss). The connection between subtle structural modulations and large changes in refractive index suggests new categories of anisotropic materials and also tunable optical materials with large refractive-index modulation and low optical losses.

physics.optics↗

arXiv2022

Unconventional Charge-density-wave Order in a Dilute d-band Semiconductor

Electron-lattice coupling effects in low dimensional materials give rise to charge density wave (CDW) order and phase transitions. These phenomena are critical ingredients for superconductivity and predominantly occur in metallic model systems such as doped cuprates, transition metal dichalcogenides, and more recently, in Kagome lattice materials. However, CDW in semiconducting systems, specifically at the limit of low carrier concentration region, is uncommon. Here, we combine electrical transport, synchrotron X-ray diffraction and optical spectroscopy to discover CDW order in a quasi-one-dimensional (1D), dilute d-band semiconductor, BaTiS3, which suggests the existence of strong electron-phonon coupling. The CDW state further undergoes an unusual transition featuring a sharp increase in carrier mobility. Our work establishes BaTiS3 as a unique platform to study the CDW physics in the dilute filling limit to explore novel electronic phases.

cond-mat.mtrl-sci↗

arXiv2022

Orientation Controlled Anisotropy in Single Crystals of Quasi-1D BaTiS3

Low-dimensional materials with chain-like (one-dimensional) or layered (twodimensional) structures are of significant interest due to their anisotropic electrical, optical, thermal properties. One material with chain-like structure, BaTiS3 (BTS), was recently shown to possess giant in-plane optical anisotropy and glass-like thermal conductivity. To understand the origin of these effects, it is necessary to fully characterize the optical, thermal, and electronic anisotropy of BTS. To this end, BTS crystals with different orientations (aand c-axis orientations) were grown by chemical vapor transport. X-ray absorption spectroscopy (XAS) was used to characterize the local structure and electronic anisotropy of BTS. Fourier transform infrared (FTIR) reflection/transmission spectra show a large inplane optical anisotropy in the a-oriented crystals, while the c-axis oriented crystals were nearly isotropic in-plane. BTS platelet crystals are promising uniaxial materials for IR optics with their optic axis parallel to the c-axis. The thermal conductivity measurements revealed a thermal anisotropy of ~4.5 between the c- and a-axis. Time-domain Brillouin scattering showed that the longitudinal sound speed along the two axes is nearly the same suggesting that the thermal anisotropy is a result of different phonon scattering rates.

cond-mat.mtrl-sci↗

arXiv2021

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskites have emerged as a new class of electronic materials, but fundamental properties and applications of chalcogenide perovskites remain limited by the lack of high quality epitaxial thin films. We report epitaxial thin film growth of BaZrS3, a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out of plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface the films are polycrystalline with a large number of extended defects suggesting the potential for further improvement in growth. X-Ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS3 films thus far. Our study opens up opportunities to realize epitaxial thin films, heterostructures, and superlattices of chalcogenide perovskites to probe fundamental physical phenomena and the resultant electronic and photonic device technologies.

cond-mat.mtrl-sci↗

arXiv2020

Discovery of highly-polarizable semiconductors BaZrS3 and Ba3Zr2S7

There are few known semiconductors exhibiting both strong optical response and large dielectric polarizability. Inorganic materials with large dielectric polarizability tend to be wide-band gap complex oxides. Semiconductors with strong photoresponse to visible and infrared light tend to be weakly polarizable. Interesting exceptions to these trends are halide perovskites and phase-change chalcogenides. Here we introduce complex chalcogenides in the Ba-Zr-S system in perovskite and Ruddlesden-Popper structures as a new family of highly polarizable semiconductors. We report the results of impedance spectroscopy on single crystals that establish BaZrS3 and Ba3Zr2S7 as semiconductors with low-frequency relative dielectric constant ($ε_0$) in the range 50 - 100, and band gap in the range 1.3 - 1.8 eV. Our electronic structure calculations indicate the enhanced dielectric response in perovskite BaZrS3 versus Ruddlesden-Popper Ba3Zr2S7 is primarily due to enhanced IR mode-effective charges, and variations in phonon frequencies along $\langle 001 \rangle$; differences in the Born effective charges and the lattice stiffness are of secondary importance. This combination of covalent bonding in crystal structures more common to complex oxides results in a sizable Fröhlich coupling constant, which suggests that charge carriers are large polarons.

cond-mat.mtrl-sci↗

arXiv2019

Crystal growth and structural analysis of perovskite chalcogenide BaZrS$_3$ and Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$

Perovskite chalcogenides are gaining substantial interest as an emerging class of semiconductors for optoelectronic applications. High quality samples are of vital importance to examine their inherent physical properties. We report the successful crystal growth of the model system, BaZrS$_3$ and its Ruddlesden-Popper phase Ba$_3$Zr$_2$S$_7$ by flux method. X-ray diffraction analyses showed space group of $Pnma$ with lattice constants of $a$ = 7.056(3) Å\/, $b$ = 9.962(4) Å\/, $c$ = 6.996(3) Å\/ for BaZrS$_3$ and $P4_2/mnm$ with $a$ = 7.071(2) Å\/, $b$ = 7.071(2) Å\/, $c$ = 25.418(5) Å\/ for Ba$_3$Zr$_2$S$_7$. Rocking curves with full-width-at-half-maximum of 0.011$^\circ$ for BaZrS$_3$ and 0.027$^\circ$ for Ba$_3$Zr$_2$S$_7$ were observed. Pole figure analysis, scanning transmission electron microscopy images and electron diffraction patterns also establish high quality of grown crystals. The octahedra tilting in the corner-sharing octahedra network are analyzed by extracting the torsion angles.

cond-mat.mtrl-sci↗

arXiv2019

Band gap evolution in Ruddlesden-Popper phases

We investigate the variation of the band gap across the Ruddlesden-Popper (RP) series (An+1BnX3n+1) in model chalcogenide, oxide, and halide materials to understand the factors influencing band gap evolution. In contrast to the oxides and halides, we find the band gap of the chalcogenides evolve differently with the thickness of the perovskite blocks in these natural superlattices. We show that octahedral rotations (i.e. deviation of the B-X-B bond angles from 180) and quantum confinement effects compete to decide the band gap evolution of RP phases. The insights gained here will allow us to rationally design layered perovskite phases for electronics and optoelectronics.

cond-mat.mtrl-sci↗

arXiv2018

Ultra-low Power Microwave Oscillators based on Phase Change Oxides as Solid-State Neurons

Neuro-inspired computing architectures are one of the leading candidates to solve complex, large-scale associative learning problems. The two key building blocks for neuromorphic computing are the synapse and the neuron, which form the distributed computing and memory units. Solid state implementations of these units remain an active area of research. Specifically, voltage or current controlled oscillators are considered a minimal representation of neurons for hardware implementations. Such oscillators should demonstrate synchronization and coupling dynamics for demonstrating collective learning behavior, besides the desirable individual characteristics such as scaling, power, and performance. To this end, we propose the use of nanoscale, epitaxial heterostructures of phase change oxides and oxides with metallic conductivity as a fundamental unit of an ultralow power, tunable electrical oscillator capable of operating in the microwave regime. Our simulations show that optimized heterostructure design with low thermal boundary resistance can result in operation frequency of up to 3 GHz and power consumption as low as 15 fJ/cycle with rich coupling dynamics between the oscillators.

physics.app-ph↗

arXiv2018

Thermal Stability Study of Transition Metal Perovskite Sulfides

Transition metal perovskite chalcogenides, a class of materials with rich tunability in functionalities, are gaining increased attention as candidate materials for renewable energy applications. Perovskite oxides are considered excellent n-type thermoelectric materials. Compared to oxide counterparts, we expect the chalcogenides to possess more favorable thermoelectric properties such as lower lattice thermal conductivity and smaller band gap, making them promising material candidates for high temperature thermoelectrics. Thus, it is necessary to study the thermal properties of these materials in detail, especially thermal stability, to evaluate their potential. In this work, we report the synthesis and thermal stability study of five compounds, α-SrZrS$_3$, β-SrZrS$_3$, BaZrS$_3$, Ba$_2$ZrS$_4$, and Ba$_3$Zr$_2$S$_7$. These materials cover several structural types including distorted perovskite, needle-like, and Ruddlesden-Popper phases. Differential scanning calorimeter and thermo-gravimetric analysis measurements were performed up to 1200°C in air. Structural and chemical characterizations such as X-ray diffraction, Raman spectroscopy, and energy dispersive analytical X-ray spectroscopy were performed on all the samples before and after the heat treatment to understand the oxidation process. Our studies show that perovskite chalcogenides possess excellent thermal stability in air at least up to 600°C.

cond-mat.mtrl-sci↗

arXiv2018

Mid-wave and Long-wave IR Linear Dichroism in a Hexagonal Perovskite Chalcogenide

Mid-wave infrared (IR) and long-wave IR spectral ranges are of growing interest in various applications such as thermal imaging, thermography-based remote sensing, and night vision. Materials widely used for IR photodetectors in this regime include cadmium mercury telluride alloys and nanostructures of compound semiconductor. The materials development for IR optics will drive down the cost of IR optical systems and enable larger scale deployment. Here, we report a mid-wave IR responsive material composed of earth abundant and non-toxic elements, Sr1+xTiS3. It has a highly anisotropic quasi-one-dimensional structure similar to hexagonal perovskites. We grew large, high quality single crystals and studied its anisotropic optical properties. We observed two distinct optical absorption edges at ~2.5 um and ~5 um, respectively, for linear polarizations along two principal axes. The material demonstrated strong and broadband linear dichroism spanning mid-wave IR and long-wave IR, with a dichroitic ratio of up to 22.

cond-mat.mtrl-sci↗