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Bradley A. A. Martin

Publications and source records attributed to Bradley A. A. Martin.

7 recordsLinked to original sources

Discovery and recovery of crystalline materials with property-conditioned transformers

Generative models have recently shown great promise for accelerating the design and discovery of new functional materials. Conditional generation enhances this capacity by allowing inverse design, where specific desired properties can be requested during the generation process. However, conditioning of transformer-based approaches, in particular, is constrained by discrete tokenisation schemes and the risk of catastrophic forgetting during fine-tuning. This work introduces CrystaLLM-π (property injection), a conditional autoregressive framework that integrates continuous property representations directly into the transformer's attention mechanism. Two architectures, Property-Key-Value (PKV) Prefix attention and PKV Residual attention, are presented. These methods bypass inefficient sequence-level tokenisation and preserve foundational knowledge from unsupervised pre-training on Crystallographic Information Files (CIFs) as textual input. We establish the efficacy of these mechanisms through systematic robustness studies and evaluate the framework's versatility across two distinct tasks. First, for structure recovery, the model processes high-dimensional, heterogeneous X-ray diffraction patterns, achieving structural accuracy competitive with specialised models and demonstrating applications to experimental structure recovery and polymorph differentiation. Second, for materials discovery, the model is fine-tuned on a specialised photovoltaic dataset to generate novel, stable candidates validated by Density Functional Theory (DFT). It implicitly learns to target optimal band gap regions for high photovoltaic efficiency, demonstrating a capability to map complex structure-property relationships. CrystaLLM-π provides a unified, flexible, and computationally efficient framework for inverse materials design.

cond-mat.mtrl-sci↗

Six Open Questions in Machine-Learned Interatomic Potential Foundation Models

Machine-learned interatomic potentials (MLIPs) have had a profound impact on molecular modelling in recent years, promising to resolve the long-standing tension between the scale and accuracy of simulations. There has been a proliferation of new models and designs, and recently the paradigm of ``foundational'' MLIPs has become prevalent. Broadly speaking, foundation models are trained on large diverse datasets and promise to work well for new systems with minimal updates required. However, in such a new and fast moving field, there are many unanswered questions. In this article, we set out to articulate and explore what we see as the most important among these questions. We start by developing a working definition for foundational MLIPs and use this definition to frame the subsequent open questions. Despite the rapid progress in the field of MLIP models, we believe that these are fundamental questions which will continue to define cutting edge research in MLIPs in the years to come.

cond-mat.mtrl-sci↗

General Learning of the Electric Response of Inorganic Materials

We introduce \texttt{MACE-Field}, a field-aware, $O(3)$-equivariant interatomic potential that learns a single electric enthalpy functional $\mathcal F(\{\mathbf R\},\mathbf E)$ and obtains $\mathbf P$, $Z^*$, and $\boldsymbolα$ by exact differentiation. A uniform field couples to latent equivariant features inside the \texttt{MACE} backbone, while the scalar energy readout preserves Maxwell reciprocity, the acoustic sum rule, and crystal tensor symmetries by construction. Because this coupling is a plug-in on top of standard \texttt{MACE}, existing energy/force foundation models can be upgraded to become field-aware. Benchmarked against semilocal DFT/DFPT reference data, a directly trained cross-chemistry ferroelectric model reproduces the same-branch Berry-phase and spontaneous polarisations across diverse inorganic crystals. Starting from the multihead foundation model \texttt{mace-mp-mh-0} and its OMAT-PBE head, joint fine-tuning on dielectric, ferroelectric, and replay data yields \texttt{MACE-Field-MH-0} foundation models, which predict $Z^*$, $\boldsymbolα$, derived dielectric constants, and cross-chemistry polarisation trends with fidelity that captures branch-resolved polarisation and spontaneous-polarisation, while retaining strong force-field accuracy. Further, single-material \texttt{MACE-Field} models and \texttt{MACE-Field-MH-0} reproduce \ce{BaTiO3} hysteresis loops and $α$-quartz infrared, Raman, and dielectric spectra from finite-field molecular dynamics, comparable to DFPT. These results show that a simple, physics-informed field coupling can endow atomistic foundation models with transferable dielectric and ferroelectric response, while targeted single-material training remains advantageous for the most quantitative spectroscopic predictions.

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Predicting polaron mobility in organic semiconductors with the Feynman variational approach

We extend the Feynman variational method applied to the parabolic-band Fröhlich (continuum) large polaron~\cite{Feynman1955} to a Holstein (lattice) small polaron, with a parabolic-band. This new theory shows a discrete localisation as a function of coupling strength. Having build the theory with the same quasi-particle Lagrangian as the 1955 work, we can directly use the FHIP~\cite{Feynman1962} response theory to calculate DC mobility and complex conductivity. We show that we can take matrix elements from electronic structure calculations on real materials, by modelling charge-carrier mobility in crystalline Rubrene. Good agreement is found to measurement, with a predicted mobility of $μ= 47.72$~\si{cm^2 V^{-1} s^{-1}} at $300$~\si{K}.

cond-mat.mtrl-sci↗

Multiple phonon modes in Feynman path-integral variational polaron mobility

The Feynman path-integral variational approach to the polaron problem\cite{Feynman1955}, along with the associated FHIP linear-response mobility theory\cite{Feynman1962}, provides a computationally amenable method to predict the frequency-resolved temperature-dependent charge-carrier mobility, and other experimental observables in polar semiconductors. We show that the FHIP mobility theory predicts non-Drude transport behaviour, and shows remarkably good agreement with the recent diagrammatic Monte-Carlo mobility simulations of Mishchenko et al.\cite{Mishchenko2019} for the abstract Fröhlich Hamiltonian. We extend this method to multiple phonon modes in the Fröhlich model action. This enables a slightly better variational solution, as inferred from the resulting energy. We carry forward this extra complexity into the mobility theory, where it shows richer structure in the frequency and temperature dependent mobility, due to the different phonon modes activating at different energies. The method provides a computationally efficient and fully quantitative method of predicting polaron mobility and response in real materials.

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Fröhlich polaron effective mass and localization length in cubic materials: degenerate and anisotropic electronic bands

Polarons, that is, charge carriers correlated with lattice deformations, are ubiquitous quasiparticles in semiconductors, and play an important role in electrical conductivity. To date most theoretical studies of so-called large polarons, in which the lattice can be considered as a continuum, have focused on the original Fröhlich model: a simple (non-degenerate) parabolic isotropic electronic band coupled to one dispersionless longitudinal optical phonon branch. The Fröhlich model allows one to understand characteristics such as polaron formation energy, radius, effective mass and mobility. Real cubic materials, instead, have electronic band extrema that are often degenerate or anisotropic and present several phonon modes. In the present work, we address such issues. We keep the continuum hypothesis inherent to the large polaron Fröhlich model, but waive the isotropic and non-degeneracy hypotheses, and also include multiple phonon branches. For polaron effective masses, working at the lowest order of perturbation theory, we provide analytical results for the case of anisotropic electronic energy dispersion, with two distinct effective masses (uniaxial) and numerical simulations for the degenerate 3-band case, typical of III-V and II-VI semiconductor valence bands. We also deal with the strong-coupling limit, using a variational treatment: we propose trial wavefunctions for the above-mentioned cases, providing polaron radii and energies. Then, we evaluate the polaron formation energies, effective masses and localisation lengths using parameters representative of a dozen II-VI, III-V and oxide semiconductors, for both electron and hole polarons...In the non-degenerate case, we compare the perturbative approach with the Feynman path integral approach in characterisizing polarons in the weak coupling limit...

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Multi-Pulse Terahertz Spectroscopy Unveils Hot Polaron Photoconductivity Dynamics in Metal-Halide Perovskites

The behavior of hot carriers in metal-halide perovskites (MHPs) present a valuable foundation for understanding the details of carrier-phonon coupling in the materials as well as the prospective development of highly efficient hot carrier and carrier multiplication solar cells. Whilst the carrier population dynamics during cooling have been intensely studied, the evolution of the hot carrier properties, namely the hot carrier mobility, remain largely unexplored. To address this, we introduce a novel ultrafast visible pump - infrared push - terahertz probe spectroscopy (PPP-THz) to monitor the real-time conductivity dynamics of cooling carriers in methylammonium lead iodide. We find a decrease in mobility upon optically depositing energy into the carriers, which is typical of band-transport. Surprisingly, the conductivity recovery dynamics are incommensurate with the intraband relaxation measured by an analogous experiment with an infrared probe (PPP- IR), and exhibit a negligible dependence on the density of hot carriers. These results and the kinetic modelling reveal the importance of highly-localized lattice heating on the mobility of the hot electronic states. This collective polaron-lattice phenomenon may contribute to the unusual photophysics observed in MHPs and should be accounted for in devices that utilize hot carriers.

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