arXiv subjects

Brendan Hanrahan

Publications and source records attributed to Brendan Hanrahan.

3 recordsLinked to original sources

arXiv2026

Monolithic GaN Systems Combining Non-Volatile Memory and Analog Computing via Area-Ratio-Engineered Ferroelectric AlScN Gate Stacks

Gallium nitride (GaN) transistors have become the platform of choice for power electronics and radio-frequency power amplifiers. To unlock capabilities beyond those of conventional GaN, integrating ferroelectric heterostructure has been considered toward memory, logic and reconfigurable systems. Here, we demonstrate ferroelectric GaN transistors employing an AlScN-based gate stack in which systematic engineering of the area-ratio (SMIS/SMFM) provides unified control over both memory and analog functionality. Precise modulation of the intermediate electrode length yields a record memory window of 27 V and a forward subthreshold swing of 27 mV/dec, driven by ferroelectric polarization reversal of a robust downward-polarization state pre-induced by two-dimensional electron gas. Low area-ratio devices (SMIS/SMFM = 1, 2) achieve 4-bit multi-level cell operation and excellent spatial uniformity across a fabricated 4 x 4 array, benchmarking favorably against established silicon and oxide ferroelectric architectures. High area-ratio devices (SMIS/SMFM = 4, 8) harness continuously tunable conductance states to demonstrate multi-state inverters and the first GaN-based ferroelectric frequency-to-voltage converter, delivering a linear frequency-voltage response across 0.5 - 500 Hz range with a conversion gain of 1.1 mV/Hz. This work establishes routes towards monolithically integrated GaN systems that combine non-volatile memory and analog signal processing on a platform inherently suited to high-power and radio-frequency applications.

cond-mat.mtrl-sci↗

arXiv2025

Ferroelectricity of Wurtzite Al$_{1-x}$Hf$_{x}$N Heterovalent Alloys

Thin films of aluminum hafnium nitride (Al$_{1-x}$Hf$_{x}$N) were synthesized via reactive magnetron sputtering for Hf contents up to $x$ = 0.13. X-ray diffraction showed a single $c$-axis oriented wurtzite phase for all films. Hard X-ray photoelectron spectroscopy demonstrated homogeneous Al:Hf distribution through the thin films and confirmed their insulating character. A collection of complementary tests showed unambiguous polarization inversion, and thus ferroelectricity in multiple samples. Current density vs. electric field hysteresis measurements showed distinct ferroelectric switching current peaks, the piezoelectric coefficient d$_{33,f,meas}$ measured using a double beam laser interferometer (DBLI) showed a reversal in sign with similar magnitude, and anisotropic wet etching confirmed field-induced polarization inversion. This demonstrates the possibility of using tetravalent--and not just trivalent--alloying elements to enable ferroelectricity in AlN-based thin films, highlighting the compositional flexibility of ferroelectricity in wurtzites and greatly expanding the chemistries that can be considered for future devices.

cond-mat.mtrl-sci↗

arXiv2021

Low-Force Elastocaloric Refrigeration via Bending

Elastocaloric cooling has been identified as a promising alternative to high global warming potential vapor compression cooling. Two key bottlenecks to adoption are the need for bulky/expensive actuators to provide sufficient uniaxial stress and inadequate elastocaloric material fatigue life. This paper defines the physics that govern performance of axisymmetric flexural bending for use as an emerging low-force and low-fatigue elastocaloric heating and cooling mechanism and further demonstrates a continuous rotary-driven cooling prototype using polycrcrystalline Ni50.7Ti48.9. Elastocaloric material performance is determined using infrared thermography during uniaxial-tension and four-point bending thermomechanical testing. A systematic study reveals the effects of strain rate (from 0.001 to 0.025 s-1), maximum strain (from 2 to 8%), and strain mode on the temperature evolution, mechanical response, and coefficient of performance. Four-point bending experiments demonstrate a temperature reduction up to 11.3°C, material coefficients of performance between 2.31 and 21.71, and a 6.09- to 7.75-fold reduction in required actuation force compared to uniaxial tension. The absence of Lüders bands and reduced mechanical dissipation during flexure represent reduced microstructure degradation and improved fatigue life. The rotary-based elastocaloric cooling prototype is shown to provide similar thermomechanical performance with the added benefit of discrete hot and cold zones, continuous cooling, inexpensive rotary actuation, and scalability, which represents a significant advancement for compact, long lifetime, and inexpensive elastocaloric cooling.

cond-mat.mtrl-sci↗