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Brenden Ortiz

Publications and source records attributed to Brenden Ortiz.

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Recent progress on liquid transport growth of quantum materials

Liquid transport growth (LTG) is a horizontal flux growth technique that is closely analogous to chemical vapor transport, with the key distinction that a molten flux rather than a vapor serves as the transport agent. Unlike conventional flux growth, LTG spatially separates charge dissolution and crystal precipitation and couples them through continuous solute transport under a deliberately imposed temperature gradient. This enables crystal growth to begin before the charge is completely dissolved, removes the equilibrium solubility constraint on the starting charge/flux ratio, and allows large yields of single crystals to be obtained from a single growth. Recent studies have further shown that by spatially separating dissolution and crystallization and maintaining crystallization at a nearly constant temperature, LTG is particularly effective for two classes of materials: compounds that crystallize only within a narrow temperature and/or composition window, and compounds whose stoichiometry, defect concentration, and thus physical properties are sensitive to the crystallization temperature. In this review, we discuss representative examples including Fe$_3$Sn$_2$, CrTe$_3$, YFe$_2$Ge$_2$, UTe$_2$, CeRh$_2$As$_2$, MoTe$_2$, WTe$_2$, and LuNb$_6$Sn$_6$ to illustrate the unique capabilities of LTG for producing high quality single crystals of diverse quantum materials. We also summarize practical considerations for LTG experimental design, including furnace selection, growth time, melt stability, and ampoule geometry, and discuss future opportunities for transforming LTG from an empirical growth method into a more predictive crystal growth technique.

cond-mat.mtrl-sci

Unidirectional coherent quasiparticles in the high-temperature rotational symmetry broken phase of AV3Sb5 kagome superconductors

Kagome metals AV3Sb5 (where the A can stand for K, Cs, or Rb) display a rich phase diagram of correlated electron states, including superconductivity and density waves. Within this landscape, recent experiments revealed signs of a transition below approximately 35 K attributed to an electronic nematic phase that spontaneously breaks rotational symmetry of the lattice. Here, we show that rotational symmetry breaking initiates universally at a high temperature in these materials, toward the 2 x 2 charge density wave transition temperature. We do this via spectroscopic-imaging scanning tunneling microscopy and study atomic-scale signatures of electronic symmetry breaking across several materials in the AV3Sb5 family: CsV3Sb5, KV3Sb5 and Sn-doped CsV3Sb5. Below a significantly lower temperature of about 30 K, we measure quantum interference of quasiparticles, a key signature for the formation of a coherent electronic state. These quasiparticles display a pronounced unidirectional feature in reciprocal space that strengthens as the superconducting state is approached. Our experiments reveal that high-temperature rotation symmetry breaking and the charge ordering states are separated from the superconducting ground state by an intermediate-temperature regime with coherent unidirectional quasiparticles. This picture is phenomenologically different compared to that in high-temperature superconductors, shedding light on the complex nature of rotation symmetry breaking in AV3Sb5 kagome superconductors.

cond-mat.str-el

Highly anisotropic magnetism in the vanadium-based kagome metal TbV6Sn6

RV6Sn6 (R=rare earth) compounds are appealing materials platforms for exploring the interplay between R-site magnetism and nontrivial band topology associated with the nonmagnetic vanadium-based kagome network. Here we present the synthesis and characterization of the kagome metal TbV6Sn6 via single-crystal x-ray diffraction, magnetization, transport, and heat capacity measurements. Magnetization measurements reveal strong, uniaxial magnetic anisotropy rooted in the alignment of Tb3Å moments in the interplane direction below 4.3(2) K. TbV6Sn6 exhibits multiband transport behavior with high mobilities of charge carriers, and our measurements suggest TbV6Sn6 is a promising candidate for hosting Chern gaps driven via the interplay between Tb-site magnetic order and the band topology of the V-site kagome network.

cond-mat.str-el