arXiv subjects

Brendon C. Rose

Publications and source records attributed to Brendon C. Rose.

8 recordsLinked to original sources

arXiv2025

TLS-induced thermal nonlinearity in a micro-mechanical resonator

We present experimental evidence of a thermally-driven amplitude-frequency nonlinearity in a thin-film quartz phononic crystal resonator at millikelvin temperatures. The nonlinear response arises from the coupling of the mechanical mode to an ensemble of microscopic two-level system defects driven out of equilibrium by a microwave drive. In contrast to the conventional Duffing oscillator, the observed nonlinearity exhibits a mixed reactive-dissipative character. Notably, the reactive effect can manifest as either a softening or hardening of the mechanical resonance, depending on the ratio of thermal to phonon energy. By combining the standard TLS theory with a thermal conductance model, the measured power-dependent response is quantitatively reproduced and readout-enhanced relaxation damping from off-resonant TLSs is identified as the primary mechanism limiting mechanical coherence. Within this framework, we delineate the conditions under which similar systems will realize this nonlinearity.

quant-ph↗

arXiv2024

Thin-film quartz for high-coherence piezoelectric phononic crystal resonators

Piezoelectric phononic crystal resonators (PCRs) are a promising platform for acoustic quantum processing, yet their performance is currently limited by coupling to an ensemble of saturable two-level system (TLS) defects within the resonator material. Motivated by its excellent bulk mechanical properties and high crystallinity, we address this by fabricating PCRs from a new substrate: thin-film quartz. At single-phonon powers and millikelvin temperatures -- requisite conditions for quantum phononic processing -- we demonstrate large internal mechanical quality factors, $Q_i > 160,000$. This represents an order of magnitude improvement in single-phonon lifetimes for piezoelectric PCR. We characterize the loss channels in these devices and find that, although improved, the low-power response is still limited by coupling to a TLS bath and that a significant portion of the TLSs are associated with the aluminum coupling electrodes. To explore the high-power response we perform ringdown measurements and demonstrate high-power quality factor-frequency products $Q_i \cdot f = 1.4 \times 10^{16}$ Hz.

quant-ph↗

arXiv2022

Minimally-diffracting quartz for ultra-low temperature surface acoustic wave resonators

We simulate and experimentally demonstrate the existence of an orientation of quartz which minimizes diffraction losses in surface acoustic wave (SAW) resonators at ultra-low temperatures. The orientation is optimized for applications to quantum technologies which benefit from high mechanical quality factors, strong electromechanical coupling, and narrow acoustic apertures. We fabricate narrow aperture SAW resonators on this substrate and measure internal quality factors greater than 100,000 at mK temperatures.

quant-ph↗

arXiv2020

Optically detected magnetic resonance in neutral silicon vacancy centers in diamond via bound exciton states

Neutral silicon vacancy (SiV0) centers in diamond are promising candidates for quantum networks because of their excellent optical properties and long spin coherence times. However, spin-dependent fluorescence in such defects has been elusive due to poor understanding of the excited state fine structure and limited off-resonant spin polarization. Here we report the realization of optically detected magnetic resonance and coherent control of SiV0 centers at cryogenic temperatures, enabled by efficient optical spin polarization via previously unreported higher-lying excited states. We assign these states as bound exciton states using group theory and density functional theory. These bound exciton states enable new control schemes for SiV0 as well as other emerging defect systems.

cond-mat.mes-hall↗

arXiv2020

Electron Spin Resonance of P Donors in Isotopically Purified Si Detected by Contactless Photoconductivity

Coherence times of electron spins bound to phosphorus donors have been measured, using a standard Hahn echo technique, to be up to 20 ms in isotopically pure silicon with [P]$ = 10^{14}$ cm$^{-3}$ and at temperatures $\leq 4 $K. Although such times are exceptionally long for electron spins in the solid state, they are nevertheless limited by donor electron spin-spin interactions. Suppressing such interactions requires even lower donor concentrations, which lie below the detection limit for typical electron spin resonance (ESR) spectrometers. Here we describe an alternative method for phosphorus donor ESR detection, exploiting the spin-to-charge conversion provided by the optical donor bound exciton transition. We characterise the method and its dependence on laser power and use it to measure a coherence time of $T_2 = 130 $ms for one of the purest silicon samples grown to-date ([P]$ = 5\times 10^{11} $cm$^{-3}$). We then benchmark this result using an alternative application of the donor bound exciton transition: optically polarising the donor spins before using conventional ESR detection at 1.7~K for a sample with [P]$ = 4\times10^{12} $cm$^{-3}$, and measuring in this case a $T_2$ of 350 ms.

cond-mat.mes-hall↗

arXiv2019

Narrow optical linewidths in erbium implanted in TiO$_2$

Atomic and atom-like defects in the solid-state are widely explored for quantum computers, networks and sensors. Rare earth ions are an attractive class of atomic defects that feature narrow spin and optical transitions that are isolated from the host crystal, allowing incorporation into a wide range of materials. However, the realization of long electronic spin coherence times is hampered by magnetic noise from abundant nuclear spins in the most widely studied host crystals. Here, we demonstrate that Er$^{3+}$ ions can be introduced via ion implantation into TiO$_2$, a host crystal that has not been studied extensively for rare earth ions and has a low natural abundance of nuclear spins. We observe efficient incorporation of the implanted Er$^{3+}$ into the Ti$^{4+}$ site (40% yield), and measure narrow inhomogeneous spin and optical linewidths (20 and 460 MHz, respectively) that are comparable to bulk-doped crystalline hosts for Er$^{3+}$. This work demonstrates that ion implantation is a viable path to studying rare earth ions in new hosts, and is a significant step towards realizing individually addressed rare earth ions with long spin coherence times for quantum technologies.

physics.app-ph↗

arXiv2017

Strongly Anisotropic Spin Relaxation in the Neutral Silicon Vacancy Center in Diamond

Color centers in diamond are a promising platform for quantum technologies, and understanding their interactions with the environment is crucial for these applications. We report a study of spin- lattice relaxation (T1) of the neutral charge state of the silicon vacancy center in diamond. Above 20 K, T1 decreases rapidly with a temperature dependence characteristic of an Orbach process, and is strongly anisotropic with respect to magnetic field orientation. As the angle of the magnetic field is rotated relative to the symmetry axis of the defect, T1 is reduced by over three orders of magnitude. The electron spin coherence time (T2) follows the same temperature dependence but is drastically shorter than T1. We propose that these observations result from phonon-mediated transitions to a low lying excited state that are spin conserving when the magnetic field is aligned with the defect axis, and we discuss likely candidates for this excited state.

quant-ph↗

arXiv2017

Observation of an environmentally insensitive solid state spin defect in diamond

Engineering coherent systems is a central goal of quantum science. Color centers in diamond are a promising approach, with the potential to combine the coherence of atoms with the scalability of a solid state platform. However, the solid environment can adversely impact coherence. For example, phonon- mediated spin relaxation can induce spin decoherence, and electric field noise can change the optical transition frequency over time. We report a novel color center with insensitivity to both of these sources of environmental decoherence: the neutral charge state of silicon vacancy (SiV0). Through careful material engineering, we achieve over 80% conversion of implanted silicon to SiV0. SiV0 exhibits excellent spin properties, with spin-lattice relaxation times (T1) approaching one minute and coherence times (T2) approaching one second, as well as excellent optical properties, with approximately 90% of its emission into the zero-phonon line and near-transform limited optical linewidths. These combined properties make SiV0 a promising defect for quantum networks.

cond-mat.mtrl-sci↗