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Brian D. Isakov

Publications and source records attributed to Brian D. Isakov.

4 recordsLinked to original sources

Observation of coherent flux-charge interaction in a gate-tunable fluxonium

Interactions that mix conjugate variables, such as the flux through a circuit element and the charge across it, lie outside the reach of the elementary couplings of superconducting circuits. Capacitors connect charge to charge, and inductors connect flux to flux, while no two-terminal element couples flux to charge directly. A native flux-charge coupling would thus serve as a circuit primitive in its own right, opening direct routes to non-reciprocity, protected modes, and unconventional readout. In this work, we demonstrate a flux-charge coupling by harnessing a voltage-tunable Josephson junction with parametrically modulated critical current, which mediates the interaction between a classical charge variable and a quantum flux operator. Relying on parity-selection rules in a hybrid superconducting-semiconductor fluxonium, we isolate the flux-charge coupling from other parasitic capacitive contributions and perform cross-quadrature-activated coherent control of states. Critically, we realize a flux-charge coupling that scales linearly with driving amplitude while keeping the transition energy first-order-insensitive to gate voltage. Such unconventional interaction broadens the toolbox of superconducting circuits with a critical missing component that enables the coherent coupling of conjugate variables.

quant-ph

Junction-Intrinsic Dissipation in Hybrid Superconductor-Semiconductor Gatemon Qubits

Superconducting transmon qubits based on hybrid superconductor-semiconductor Josephson junctions (gatemons) offer gate tunability, but their relaxation times remain well below those of state-of-the-art transmons, and the origin of this discrepancy is not fully understood. Here, we co-fabricate gatemons and SIS-junction transmons with nominally identical circuit layouts, gate dielectrics, and control lines, so that the Josephson element is the only intentional distinction. Across multiple chips, transmons in this architecture reach relaxation times in the tens of microseconds, whereas gatemons saturate in the few-microsecond range. Using the transmons as on-chip references, we construct a loss budget including Purcell decay, spontaneous emission through the control line, and internal dielectric loss, and find that the corresponding T1 limits exceed all measured gatemon values by more than an order of magnitude. Temperature-dependent T1 measurements follow a common quasiparticle-activation model and yield similar superconducting gaps for S-Sm-S and SIS junctions, indicating that the reduced gatemon coherence is dominated by additional temperature-independent, junction-intrinsic dissipation.

quant-ph

Gatemon Qubit Revisited for Improved Reliability and Stability

The development of quantum circuits based on hybrid superconductor-semiconductor Josephson junctions holds promise for exploring their mesoscopic physics and for building novel superconducting devices. The gate-tunable superconducting transmon qubit (gatemon) is the paradigmatic example of such a superconducting circuit. However, gatemons typically suffer from unstable and hysteretic qubit frequencies with respect to the applied gate voltage and reduced coherence times. Here we develop methods for characterizing these challenges in gatemons and deploy these methods to compare the impact of shunt capacitor designs on gatemon performance. Our results indicate a strong frequency- and design-dependent behavior of the qubit stability, hysteresis, and dephasing times. Moreover, we achieve highly reliable tuning of the qubit frequency with 1 MHz precision over a range of several GHz, along with improved stability in grounded gatemons compared to gatemons with a floating capacitor design.

cond-mat.mes-hall

Grain size in low loss superconducting Ta thin films on c-axis sapphire

In recent years, the implementation of thin-film Ta has led to improved coherence times in superconducting circuits. Efforts to further optimize this materials set have become a focus of the subfield of materials for superconducting quantum computing. It has been previously hypothesized that grain size could be correlated with device performance. In this work, we perform a comparative grain size experiment with $α$-Ta on $c$-axis sapphire. Our evaluation methods include both room-temperature chemical and structural characterization and cryogenic microwave measurements, and we report no statistical difference in device performance between small- and larger-grain-size devices with grain sizes of 924 nm$^2$ and 1700 nm$^2$, respectively. These findings suggest that grain size is not correlated with loss in the parameter regime of interest for Ta grown on c-axis sapphire, narrowing the parameter space for optimization of this materials set.

quant-ph