arXiv subjects

Bridget R. Denzer

Publications and source records attributed to Bridget R. Denzer.

4 recordsLinked to original sources

arXiv2026

On Transmission Function Amplitude and Phase Recovery in Multislice Electron Ptychography

{Multislice electron ptychography commonly accounts for inelastic scattering by including an absorptive object potential in the reconstruction forward model that attenuates the elastic signal. However, it remains unclear how the reconstruction is quantitatively impacted by thermal scattering. Here, we use the quantum excitation of phonons (QEP) formalism, which explicitly separates elastic and inelastic (thermal diffuse) scattering within a single multislice propagation, to simulate four-dimensional scanning transmission electron microscopy (4D STEM) datasets of PbTiO$_3$ and SrTiO$_3$ and reconstruct their phase and amplitude. We find that reconstructions of the QEP total and elastic-only datasets are nearly indistinguishable across sample thicknesses from 11 to 40 nm and across atomic species, demonstrating that the reconstruction is largely insensitive to incoherent thermal diffuse scattering within the collected angular range. Reconstructions from multislice phase-only simulations further confirm that appreciable amplitude does not arise from multiple elastic scattering, but instead reflects attenuation of the coherent elastic signal due to thermal scattering. Further comparison of the QEP elastic-only reconstruction with absorptive multislice simulations reveals substantial amplitude contrast deviations for heavy Pb columns (up to 17\%), arising from the approximations used to evaluate the absorptive potential for the 4D STEM simulation. These results thus indicate that reconstruction phase and amplitude accuracy are not significantly limited by the absorptive potential forward model, even in the presence of thermal diffuse scattering.

cond-mat.mtrl-sci↗

arXiv2025

Operando Electron Microscopy of Nanoscale Electronic Devices on Non-Conductive Substrates

Achieving operating conditions comparable to ``bulk'' electronic devices, such as thin film capacitors, during \textit{operando} electron microscopy remains challenging, particularly when devices are grown on non-conductive substrates. Limited precision of focused ion beam milling for sample preparation often necessitates the use of conductive substrates or artificially thick layers that differ from actual device architectures. These modifications can alter native strain, electrostatic boundary conditions, and ultimately device response. Here, we present a generic and versatile workflow for \textit{operando} biasing of thin-film capacitors in the (scanning) transmission electron microscope, including sample fabrication and device operation. By introducing a patterned insulating barrier adjacent to the bulk-characterized capacitors, our approach enables sample preparation without altering the original film structure. As a case study, we apply the method to a piezoelectric thin-film capacitor grown on an insulating substrate, and demonstrate that it preserves the boundary-condition-sensitive domain switching at the atomic scale under applied electric fields. Overall, the process can help to establish a foundation for systematic \textit{operando} studies of complex thin-film systems under representative bulk testing geometries.

cond-mat.mtrl-sci↗

arXiv2025

Optimizing Atomic Number Contrast in Multislice Electron Ptychography

Here we explore the atomic number ($Z$) dependence of multislice electron ptychography and approaches to optimize Z sensitivity. Specifically, we show that ptychography's $Z$-dependence is highly dependent on the integrated area of an atom column considered. A monotonic $Z$-dependence is found when the reconstructed projected atomic potentials are integrated over a small region. When increasing the integration area, $Z$-contrast changes significantly, becoming highly non-monotonic and following trends in the orbital shell-structure. Moreover, the reconstructed projected potential aligns with the transmission function with an overall deviation of only 2.4\%. The non-monotonic $Z$-dependence is further shown to be useful to accentuate contrast between certain elements, allowing for distinguishability of elements that are only a single atomic number apart, and even in $>$ 20 nm thick samples. This is demonstrated for $β$-CuZn ($Z$ = 29 and 30), with the differentiability between the elements explored for different signal quantification methods. The impact of electron dose and finite effective source size are also considered. These results demonstrate that the atom column integration area can optimize ptychographic $Z$-contrast for specific applications and experimental conditions.

cond-mat.mtrl-sci↗

arXiv2024

Bridging experiment and theory of relaxor ferroelectrics at the atomic scale with multislice electron ptychography

Introducing structural and/or chemical heterogeneity into otherwise ordered crystals can dramatically alter material properties. Lead-based relaxor ferroelectrics are a prototypical example, with decades of investigation having connected chemical and structural heterogeneity to their unique properties. While theory has pointed to the formation of an ensemble of ``slush''-like polar domains, the lack of direct, spatially resolved volumetric data comparable to simulations presents a significant challenge in measuring the spatial distribution and correlation of local chemistry and structure with the physics underlying relaxor behavior. Here, we address this challenge through three-dimensional volumetric characterization of the prototypical relaxor ferroelectric \ce{0.68Pb(Mg$_{1/3}$Nb$_{2/3}$)O3-0.32PbTiO$_3$} using multislice electron ptychography. Direct comparison with molecular dynamics simulations reveals the intimate relationship between the polar structure and unit-cell level charge imbalance induced by chemical disorder. Further, polar nanodomains are maintained through local correlations arising from residual short-range chemical order. Acting in concert with the chemical heterogeneities, it is also shown that compressive strain enhances out-of-plane correlations and ferroelectric-like order without affecting the in-plane relaxor-like structure. Broadly, these findings provide a pathway to enable detailed atomic scale understanding for hierarchical control of polar domains in relaxor ferroelectric materials and devices, and also present significant opportunities to tackle other heterogeneous systems using complementary theoretical and experimental studies.

cond-mat.mtrl-sci↗