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Bryan D. Assunção

Publications and source records attributed to Bryan D. Assunção.

2 recordsLinked to original sources

Physical Pictures for Quasisymmetry in Crystals

Quasisymmetry (QS) provides a novel route to understand and control near-degeneracies, Berry curvature, optical selection rules, and symmetry-protected phenomena in quantum materials. Here we give physical interpretations of the emergence of QS operators across multiple material families. Using density functional theory and the $\mathbf{\mathit{k}}\cdot\mathbf{\mathit{p}}$ formalism, we identify QS subspaces and calculate their representation matrices, quantifying the quasisymmetry via a metric $ε$ that measures subspace invariance. For Sn/SiC and transition-metal dichalcogenide monolayers, QS corresponds to an emergent mirror symmetry, whereas in wurtzite crystals it manifests as an emergent spatial inversion. By contrast, for AgLa the QS appearing in avoided crossings is inherited from a nearby high-symmetry point rather than being an emergent lattice symmetry. Combining group-theoretical analysis and $\mathbf{\mathit{k}}\cdot\mathbf{\mathit{p}}$ modeling, our results establish concrete physical pictures for QS and provide practical criteria to diagnose it in first-principles calculations.

cond-mat.mtrl-sci↗

Phase transitions and scale invariance in topological Anderson insulators

We investigate disordered-driven transitions between trivial and topological insulator (TI) phases in two-dimensional (2D) systems. Our study primarily focuses on the BHZ model with Anderson disorder, while other standard 2DTI models exhibit equivalent features. The analysis is based on the local Chern marker (LCM), a local quantity that allows for the characterization of topological transitions in finite and disordered systems. Our simulations indicate that disorder-driven trivial to topological insulator transitions are nicely characterized by $\mathcal{C}_0$, the disorder averaged LCM near the central cell of the system. We show that $\mathcal{C}_0$ is characterized by a single-parameter scaling, namely, $\mathcal{C}_0(M, W, L) \equiv \mathcal{C}_0(z)$ with $z = [W^μ-W_c^μ(M)]L$, where $M$ is the Dirac mass, $W$ is the disorder strength and $L$ is the system size, while $W_c(M) \propto \sqrt{M}$ and $μ\approx 2$ stand for the critical disorder strength and critical exponent, respectively. Our numerical results are in agreement with a theoretical prediction based on a first-order Born approximation (1BA) analysis. These observations lead us to speculate that the universal scaling function we have found is rather general for amorphous and disorder-driven topological phase transitions.

cond-mat.dis-nn↗