arXiv subjects

Byeongin Lee

Publications and source records attributed to Byeongin Lee.

5 recordsLinked to original sources

arXiv2026

Imaging asymmetric Coulomb blockade phenomena across metallic nanoislands

Coulomb blockade (CB) arises in nanoscale systems with ultra-small capacitance, where discrete charging effects dictate electron transport, enabling wide-ranging applications based on single-electron transistors. Despite established electrostatic control of charge states in quantum dots and nanoislands, a rigorous quantitative link between junction parameters and the CB spectrum remains elusive. Here, using scanning tunneling spectroscopy, we investigate the spatial variation of CB in indium nanoislands on semiconducting black phosphorus. We observe spatially dispersive charging resonances whose trajectories exhibit a finite shift of the symmetry axis in bias as well as a pronounced asymmetric curvature. By comparing the experimental results with calculations based on orthodox theory, we show that these features originate from work function differences in the junctions, underscoring the importance of junction-specific electrostatics in nanoscale charge transport.

cond-mat.mes-hall↗

arXiv2026

Identifying field-tunable surface resonance states on black phosphorus

Surface resonance states are electronic states localized near the surface while remaining hybridized with bulk bands. These states can strongly modify the electric-field response of semiconductors. Here, we demonstrate using scanning tunneling spectroscopy that on black phosphorus, surface resonance states near the valence-band edge dominate the screening of a strong external electric field. We observe in the tunneling conductance spectrum a pronounced dip with an energy continuously tunable by the local electric field in the tunneling junction. Meanwhile, we also notice that the bulk band edges remain effectively pinned, indicating efficient surface screening and suppression of bulk band bending. We interpret the conductance dip as the consequence of a field-dependent tunneling barrier: as the external electric field drives the surface resonance band into the band gap, the coupling between the surface resonance states and the bulk states is suppressed, leading to a reduced tunneling probability. Our simplified model based on this mechanism reproduces our main experimental findings. Our results highlight surface-localized states as a critical component in the electrostatic response of semiconductors, which must be taken into consideration in the design and operation of nanoscale semiconductor devices.

cond-mat.mes-hall↗

arXiv2025

Anomalous impurity-induced charge modulations in black phosphorus

We observe anomalous charge modulations induced by ionized indium impurities on the surface of the semiconductor black phosphorus by scanning tunneling microscopy (STM). When the impurities are switched into a negatively charged state by the STM tip, periodic charge modulations emerge around the impurity center, but strictly confined by the nanoscale impurity potential. These modulations form a distorted triangular pattern, whose periodicity remains unchanged in a wide range of positive bias. Furthermore, these local charge orders exhibit an anisotropy opposite to that expected based on the anisotropy of the Fermi surface, challenging a simple band-structure interpretation. Our experiment demonstrates the possibility of creating and manipulating macroscopic charge orders through impurity engineering.

cond-mat.str-el↗

arXiv2024

Charge ordered phases in the hole-doped triangular Mott insulator 4Hb-TaS2

4Hb-TaS2 has been proposed to possess unconventional superconductivity with broken time reveral symmetry due to distinctive layered structure, featuring a heterojunction between a 2D triangular Mott insulator and a charge density wave metal. However, since a frustrated spin state in the correlated insulating layer is susceptible to charge ordering with carrier doping, it is required to investigate the charge distribution driven by inter-layer charge transfer to understand its superconductivity. Here, we use scanning tunneling microscopy and spectroscopy (STM/S) to investigate the charge ordered phases of 1T-TaS2 layers within 4Hb-TaS2, explicitly focusing on the non-half-filled regime. Our STS results show an energy gap which exhibits an out-of-phase relation with the charge density. We ascribe the competition between on-site and nonlocal Coulomb repulsion as the driving force for the charge-ordered insulating phase of a doped triangular Mott insulator. In addition, we discuss the role of the insulating layer in the enhanced superconductivity of 4Hb-TaS2.

cond-mat.str-el↗

arXiv2024

Origin of Distinct Insulating Domains in the Layered Charge Density Wave Material 1T-TaS2

Vertical charge order shapes the electronic properties in layered charge density wave (CDW) materials. Various stacking orders inevitably create nanoscale domains with distinct electronic structures inaccessible to bulk probes. Here, the stacking characteristics of bulk 1$T$-TaS$2$ are analyzed using scanning tunneling spectroscopy (STS) and density functional theory (DFT) calculations. It is observed that Mott-insulating domains undergo a transition to band-insulating domains restoring vertical dimerization of the CDWs. Furthermore, STS measurements covering a wide terrace reveal two distinct band insulating domains differentiated by band edge broadening. These DFT calculations reveal that the Mott insulating layers preferably reside on the subsurface, forming broader band edges in the neighboring band insulating layers. Ultimately, buried Mott insulating layers believed to harbor the quantum spin liquid phase are identified. These results resolve persistent issues regarding vertical charge order in 1$T$-TaS$2$, providing a new perspective for investigating emergent quantum phenomena in layered CDW materials.

cond-mat.str-el↗