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C. -F. Chang

Publications and source records attributed to C. -F. Chang.

2 recordsLinked to original sources

Simultaneous mapping of the ultrafast time and fluence dependence of the laser-induced insulator-to-metal transition in magnetite

Pump-probe methods are a ubiquitous tool in the field of ultrafast dynamic measurements. In recent years, x-ray free-electron laser experiments have gained importance due to their ability to probe with high chemical selectivity and at atomic length scales. Measurements are typically repeated many thousands of times to collect sufficient statistics and vary parameters like delay or fluence, necessitating that initial conditions are restored each time. An alternative is presented by experiments which measure the relevant parameters in a single shot. Here, we present a time-to-space mapping imaging scheme that enables us to record a range of delays and laser fluences in any single shot of the x-ray probe. We demonstrate the use of this scheme by mapping the ultrafast dynamics of the optically induced insulator-to-metal Verwey transition in a magnetite thin film, probed by soft x-ray resonant diffraction. By extrapolating our results toward the conditions found at x-ray free-electron lasers with higher photon energy, we demonstrate that the presented data could be recorded in a single shot.

cond-mat.mtrl-sci

Effect of antisite disorder on the magnetic and transport properties of a quaternary Heusler alloy

Spin gapless semiconductors based Heusler alloys are the special class of materials due to their unique band structure, high spin polarization and high Curie temperature. These materials exhibit a distinct electronic structure: a nonzero band gap in one spin channel while the other spin channel remains gapless, making them highly suitable for tunable spintronics. In this study, a comprehensive analysis of structural, magnetic, thermoelectric, and transport properties of the quaternary Heusler alloy CoFeMnSn is conducted. X-ray diffraction and Neutron diffraction analyses confirm a well ordered structure with partial antisite disorder between Co, Fe and Mn, Sn atoms. Magnetic studies show that the material exhibits room-temperature ferromagnetism, with a Curie temperature of around 660 K. Notably, we observe an anomalous Hall effect linked to intrinsic mechanisms driven by Berry curvature, underscoring the intricate relationship between structural disorder and electronic behavior. Transport measurements also highlight the impact of antisite disorder on the systems, with resistivity decreasing as temperature increases. These insights position CoFeMnSn as a promising material for future spintronic devices and advanced technological applications.

cond-mat.mtrl-sci