arXiv subjects

C. A. Balseiro

Publications and source records attributed to C. A. Balseiro.

At least 37 records · Page 2Linked to original sources

arXiv2016

Bilayer graphene under pressure: Electron-hole Symmetry Breaking, Valley Hall Effect, and Landau Levels

The electronic structure of bilayer graphene under pressure develops very interesting features with an enhancement of the trigonal warping and a splitting of the parabolic touching bands at the K point of the reciprocal space into four Dirac cones, one at K and three along the T symmetry lines. As pressure is increased, these cones separate in reciprocal space and in energy, breaking the electron-hole symmetry. Due to their energy separation, their opposite Berry curvature can be observed in valley Hall effect experiments and in the structure of the Landau levels. Based on the electronic structure obtained by Density Functional Theory, we develop a low energy Hamiltonian that describes the effects of pressure on measurable quantities such as the Hall conductivity and the Landau levels of the system.

cond-mat.mtrl-sci↗

arXiv2015

Floquet interface states in illuminated three-dimensional topological insulators

Recent experiments showed that the surface of a three dimensional topological insulator develops gaps in the Floquet-Bloch band spectrum when illuminated with a circularly polarized laser. These Floquet-Bloch bands are characterized by non-trivial Chern numbers which only depend on the helicity of the polarization of the radiation field. Here we propose a setup consisting of a pair of counter-rotating lasers, and show that one-dimensional chiral states emerge at the interface between the two lasers. These interface states turn out to be spin-polarized and may trigger interesting applications in the field of optoelectronics and spintronics.

cond-mat.mes-hall↗

arXiv2015

Impurities and electronic localization in graphene bilayers

We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe non-magnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field induced gap is partially filled by strongly localized impurity states. Interestingly, the structure, distribution and localization length of these states depend on the field polarization.

cond-mat.mes-hall↗

arXiv2015

Gate induced enhancement of spin-orbit coupling in dilute fluorinated graphene

We analyze the origin of spin-orbit coupling (SOC) in fluorinated graphene using Density Functional Theory (DFT) and a tight-binding model for the relevant orbitals. As it turns out, the dominant source of SOC is the atomic spin-orbit of fluorine adatoms and not the impurity induced SOC based on the distortion of the graphene plane as in hydrogenated graphene. More interestingly, our DFT calculations show that SOC is strongly affected by both the type and concentrations of the graphene's carriers, being enhanced by electron doping and reduced by hole doping. This effect is due to the charge transfer to the fluorine adatom and the consequent change in the fluorine-carbon bonding. Our simple tight-binding model, that includes the SOC of the $2p$ orbitals of F and effective parameters based on maximally localized Wannier functions, is able to account for the effect. The strong enhancement of the SOC induced by graphene doping opens the possibility to tune the spin relaxation in this material.

cond-mat.mes-hall↗

arXiv2014

Multiterminal Conductance of a Floquet Topological Insulator

We report on simulations of the dc conductance and quantum Hall response of a Floquet topological insulator using Floquet scattering theory. Our results reveal that laser-induced edge states in graphene lead to quantum Hall plateaus once imperfect matching with the non-illuminated leads is lessened. But the magnitude of the Hall plateaus is not directly related to the number and chirality of all the edge states at a given energy as usual. Instead, the plateaus are dominated only by those edge states adding to the dc density of states. Therefore, the dc quantum Hall conductance of a Floquet topological insulator is not directly linked to topological invariants of the full the Floquet bands.

cond-mat.mes-hall↗

arXiv2014

Irradiated graphene as a tunable Floquet topological insulator

In the presence of a circularly polarized mid-infrared radiation graphene develops dynamical band gaps in its quasi-energy band structure and becomes a Floquet insulator. Here we analyze how topologically protected edge states arise inside these gaps in the presence of an edge. Our results show that the gap appearing at $\hbarΩ/2$, where $\hbar Ω$ is the photon energy, is bridged by two chiral edge states whose propagation direction is set by the direction of the polarization of the radiation field. Therefore, both the propagation direction and the energy window where the states appear can be controlled externally. We present both analytical and numerical calculations that fully characterize these states. This is complemented by simple topological arguments that account for them and by numerical calculations for the case of semi-infinite sample, thereby eliminating finite size effects.

cond-mat.mes-hall↗

arXiv2014

Diffusion of fluorine adatoms on doped graphene

We calculate the diffusion barrier of fluorine adatoms on doped graphene in the diluted limit using Density Functional Theory. We found that the barrier $Δ$ strongly depends on the magnitude and character of the graphene's doping ($δn$): it increases for hole doping ($δn<0$) and decreases for electron doping ($δn>0$). Near the neutrality point the functional dependence can be approximately by $Δ=Δ_0-α\, δn$ where $α\simeq6\times10^{-12}$ meVcm$^2$. This effect leads to significant changes of the diffusion constant with doping even at room temperature and could also affect the low temperature diffusion dynamics due to the presence of substrate induced charge puddles. In addition, this might open up the possibility to engineer the F dynamics on graphene by using local gates.

cond-mat.mes-hall↗

arXiv2014

Floquet chiral edge states in graphene

We report on the emergence of laser-induced chiral edge states in graphene ribbons. Insights on the nature of these Floquet states is provided by an analytical solution which is complemented with numerical simulations of the transport properties. Guided by these results we show that graphene can be used for realizing non-equilibrium topological states with striking tunability: While the laser intensity can be used to control their velocity and decay length, changing the laser polarization switches their propagation direction.

cond-mat.mes-hall↗

arXiv2014

Partial preservation of chiral symmetry and colossal magnetoresistance in adatom doped graphene

We analyze the electronic properties of adatom doped graphene in the low impurity concentration regime. We focus on the Anderson localized regime and calculate the localization length ($ξ$) as a function of the electron doping and an external magnetic field. The impurity states hybridize with carbon's $p_z$ states and form a partially filled band close to the Dirac point. Near the impurity band center, the chiral symmetry of the system's effective Hamiltonian is partially preserved which leads to a large enhancement of $ξ$. The sensitivity of transport properties, namely Mott's variable range hopping scale $T_0$, to an external magnetic field perpendicular to the graphene sheet leads to a colossal magnetoresistance effect, as observed in recent experiments.

cond-mat.mes-hall↗

arXiv2012

Spin-orbit induced chirality of Andreev states in Josephson junctions

We study Josephson junctions (JJs) in which the region between the two superconductors is a multichannel system with Rashba spin-orbit coupling (SOC) where a barrier or a quantum point contact (QPC) is present. These systems might present unconventional Josephson effects such as Josephson currents for zero phase difference or critical currents that \textit{depend on} the current direction. Here, we discuss how the spin polarizing properties of the system in the normal state affect the spin characteristic of the Andreev bound states inside the junction. This results in a strong correlation between the spin of the Andreev states and the direction in which they transport Cooper pairs. While the current-phase relation for the JJ at zero magnetic field is qualitatively unchanged by SOC, in the presence of a weak magnetic field a strongly anisotropic behavior and the mentioned anomalous Josephson effects follow. We show that the situation is not restricted to barriers based on constrictions such as QPCs and should generically arise if in the normal system the direction of the carrier's spin is linked to its direction of motion.

cond-mat.mes-hall↗

arXiv2012

Effects of spin density wave quantization on the electrical transport in epitaxial Cr thin films

We present measurements of the electrical resistivity, $ρ$, in epitaxial Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature, $T$. The $ρ(T)$ curves display hysteretic behavior in certain temperature range, which is film thickness dependent. The hysteresis are related to the confinement of quantized incommensurate spin density waves (ISDW) in the film thickness. Our important finding is to experimentally show that the temperature $T_{mid}$ where the ISDW changes from $N$ to $N$\,+\,1 nodes {\it decreases} as the film thickness {\it increases}. Identifying $T_{mid}$ with a first order transition between ISDW states with $N$ and $N$\,+\,1 nodes, and using a Landau approach to the free energy of the ISDW together with Monte Carlo simulations, we show that the system at high temperatures explores all available modes for the ISDW, freezing out in one particular mode at a transition temperature that indeed decreases with film thickness, $L$. The detailed dependence of $T_{mid}(L)$ seems to depend rather strongly on the boundary conditions at the Cr film interfaces.

cond-mat.mtrl-sci↗

arXiv2012

Barkhausen-type noise in the resistance of antiferromagnetic Cr thin films

We present an experimental study of the changes generated on the electrical resistance $R(T)$ of epitaxial Cr thin films by the transformation of quantized spin density wave domains as the temperature is changed. A characteristic resistance noise appears only within the same temperature region where a cooling-warming cycle in $R(T)$ displays hysteretic behavior. We propose an analysis based on an analogy with the Barkhausen noise seen in ferromagnets. There fluctuations in the magnetization $M(H)$ occur when the magnetic field $H$ is swept. By mapping $M \rightarrow Ψ_0$ and $H \rightarrow T$, where $Ψ_0$ corresponds to the order parameter of the spin density wave, we generalize the Preisach model in terms of a random distribution of {\it resistive hysterons} to explain our results. These hysterons are related to distributions of quantized spin density wave domains with different sizes, local energies and number of nodes.

cond-mat.mtrl-sci↗

arXiv2012

Dynamical magnetic anisotropy and quantum phase transitions in a vibrating spin-1 molecular junction

We study the electronic transport through a spin-1 molecule in which mechanical stretching produces a magnetic anisotropy. In this type of device, a vibron mode along the stretching axis will couple naturally to the molecular spin. We consider a single molecular vibrational mode and find that the electron-vibron interaction induces an effective correction to the magnetic anisotropy that shifts the ground state of the device toward a non-Fermi liquid phase. A transition into a Fermi liquid phase could then be achieved, by means of mechanical stretching, passing through an underscreened spin-1 Kondo regime. We present numerical renormalization group results for the differential conductance, the spectral density, and the magnetic susceptibility across the transition.

cond-mat.str-el↗

arXiv2012

Tunable Charge and Spin Seebeck Effects in Magnetic Molecular Junctions

We study the charge and spin Seebeck effects in a spin-1 molecular junction as a function of temperature (T), applied magnetic field (H), and magnetic anisotropy (D) using Wilson's numerical renormalization group. A hard-axis magnetic anisotropy produces a large enhancement of the charge Seebeck coefficient Sc (\sim k_B/|e|) whose value only depends on the residual interaction between quasiparticles in the low temperature Fermi-liquid regime. In the underscreened spin-1 Kondo regime, the high sensitivity of the system to magnetic fields makes it possible to observe a sizable value for the spin Seebeck coefficient even for magnetic fields much smaller than the Kondo temperature. Similar effects can be obtain in C60 junctions where the control parameter is the gap between a singlet and a triplet molecular state.

cond-mat.str-el↗

arXiv2012

Transport through side-coupled double quantum dots: from weak to strong interdot coupling

We report low-temperature transport measurements through a double quantum dot device in a configuration where one of the quantum dots is coupled directly to the source and drain electrodes, and a second (side-coupled) quantum dot interacts electrostatically and via tunneling to the first one. As the interdot coupling increases, a crossover from weak to strong interdot tunneling is observed in the charge stability diagrams that present a complex pattern with mergings and apparent crossings of Coulomb blockade peaks. While the weak coupling regime can be understood by considering a single level on each dot, in the intermediate and strong coupling regimes, the multi-level nature of the quantum dots needs to be taken into account. Surprisingly, both in the strong and weak coupling regimes, the double quantum dot states are mainly localized on each dot for most values of the parameters. Only in an intermediate coupling regime the device presents a single dot-like molecular behavior as the molecular wavefunctions weight is evenly distributed between the quantum dots. At temperatures larger than the interdot coupling energy scale, a loss of coherence of the molecular states is observed.

cond-mat.mes-hall↗

arXiv2011

Magnetic Structure of Hydrogen Induced Defects on Graphene

Using density functional theory (DFT), Hartree-Fock, exact diagonalization, and numerical renormalization group methods we study the electronic structure of diluted hydrogen atoms chemisorbed on graphene. A comparison between DFT and Hartree-Fock calculations allows us to identify the main characteristics of the magnetic structure of the defect. We use this information to formulate an Anderson-Hubbard model that captures the main physical ingredients of the system, while still allowing a rigorous treatment of the electronic correlations. We find that the large hydrogen-carbon hybridization puts the structure of the defect half-way between the one corresponding to an adatom weakly coupled to pristine graphene and a carbon vacancy. The impurity's magnetic moment leaks into the graphene layer where the electronic correlations on the C atoms play an important role in stabilizing the magnetic solution. Finally, we discuss the implications for the Kondo effect.

cond-mat.mes-hall↗

arXiv2011

Edge channel mixing induced by potential steps in an integer quantum Hall system

We investigate the coherent mixing of co-propagating edge channels in a quantum Hall bar produced by step potentials. In the case of two edge channels it is found that, although a single step induces only a few percent mixing, a series of steps could yield 50% mixing. In addition, a strong mixing is found when the potential height of a single step allows a different number of edge channels on the two sides of the step. Charge density probability has been also calculated even for the case where the step is smoothened.

cond-mat.mes-hall↗

arXiv2011

Quantum Transport Through a Stretched Spin--1 Molecule

We analyze the electronic transport through a model spin-1 molecule as a function of temperature, magnetic field and bias voltage. We consider the effect of magnetic anisotropy, which can be generated experimentally by stretching the molecule. In the experimentally relevant regime the conductance of the unstretched molecule reaches the unitary limit of the underscreened spin- 1 Kondo effect at low temperatures. The magnetic anisotropy generates an antiferromagnetic coupling between the remaining spin 1/2 and a singular density of quasiparticles, producing a second Kondo effect and a reduced conductance. The results explain recent measurements in spin-1 molecules [Science 328 1370 (2010)].

cond-mat.str-el↗