arXiv subjects

C. Abinash Bhuyan

Publications and source records attributed to C. Abinash Bhuyan.

4 recordsLinked to original sources

arXiv2025

Enhanced THz emission and exciton transfer in monolayer MoS2/GaAs heterostructures

For designing an efficient terahertz (THz) emitter, the defect density of the semiconductors is smartly increased to reduce carrier lifetime, which subsequently lowers the overall power output of the semiconductor. To overcome this fundamental trade-off, this study presents a novel approach, by integrating a direct band gap 2D semiconductor such as monolayer MoS2 (1L-MoS2) with a well-known THz emitter, low-temperature-grown gallium arsenide (GaAs). The fabricated hybrid 2D/3D vertical van der Waals heterostructure showed a 15% higher THz emission compared to bare GaAs due to phase-coherent addition of second-order non-linear susceptibility, and overall enhancement in the electric field of laser. The photoluminescence (PL) enhancement factor of 2.38 in heterostructures at GaAs emission energy of 1.42 eV. However, the substantial quenching of PL emission for 1L-MoS2 at the energy of 1.84 eV, is attributed to the Dexter-type exciton transfer mechanism at type-I band alignment. THz time-domain spectroscopy reveals a significant increase in optoelectronic properties, such as optical conductivity becoming doubled, and a 50% reduction in absorption coefficients. The study introduces a new route for fabricating large-area and compact mixed-dimensional van der Waals heterostructures, which can be used to enhance the efficiency of conventional semiconductor technologies and THz-based optoelectronic devices.

cond-mat.mtrl-sci↗

arXiv2025

Evaluation of strain and charge-transfer doping in wet-polymeric transferred monolayer MoS2: implications for field effect transistors

Two-dimensional materials offer exceptional tunability of electronic and optical properties via strain and doping engineering. However, the unintentional introduction of polymeric residues during wet chemical 2D film transfer processes such as wet chemical etching and surface energy assisted methods remains critical, yet unexplored. This study systematically investigates the impact of such residues on the optical and electrical properties of monolayer MoS\textsubscript{2} using Raman and photoluminescence spectroscopy. We reveal that polymer residues in transferred films from wet chemical etching induce distinct strain and doping behaviors: PMMA-existed regions exhibit biaxial tensile strain and \textit{p}-type doping, while PMMA-free regions show compressive strain. In contrast, the surface energy assisted transfer method introduces compressive strain and \textit{n}-type doping in the transferred film due to residue interactions. Field-effect transistor measurements corroborate these findings, showing polymer residue-influenced modulation of charge transport. Notably, the surface energy assisted technique minimizes transfer-induced defects, highlighting its superiority for fabricating high-performance 2D optoelectronic devices. These results underscore the critical role of transfer methodologies in tailoring optoelectronic properties and provide practical insights for optimizing 2D material integration in advanced technologies.

cond-mat.mtrl-sci↗

arXiv2024

Fabrication of high electron mobility and high photoluminescence quantum yield nanoscrolled monolayer MoS2

We fabricated the 1D nanoscrolled monolayer MoS2 (1L-MoS2) with superior characteristics from 1L-MoS2 film in a facile route, using a suitable organic solvent with optimum surface tension, evaporation rate and dielectric constant, which facilitates the controlled scroll formation. These nanoscrolls behave as multilayers in morphology and monolayer electronically. The nanoscrolls exhibited a direct optical gap with enhanced photoluminescence quantum yield stemming from the weak interlayer coupling among constituent layers and were corroborated by low-frequency Raman measurements and Kelvin probe force microscopy measurements. Furthermore, enhanced photoluminescence emission after annealing uncovers the thermal stability of nanoscrolls. In addition, conducting atomic force microscopy results exhibit a significantly higher photocurrent in the nanoscrolled 1L-MoS2 compared to the 1L-MoS2. We also realized significantly improved field effect transistor device parameters in nanoscrolled 1L-MoS2 devices. In nanoscrolled devices, we report the highest mobility value of 2400 cm2V-1s-1 reported in any form of 1L-MoS2.

cond-mat.mtrl-sci↗

arXiv2021

The comparative defect study on the polymeric transfer of MoS2 monolayers

The defect-free transfer of chemical vapour deposition (CVD) grown monolayer MoS2 is important for both fabrication of 2D devices and fundamental point of view for various studies where substrate effects need to be minimized. Among many transfer techniques, two well-known techniques that use the polymer as carriers are wet-transfer technique and the surface-energy-assisted transfer technique. In this work, we transferred a single CVD grown monolayer MoS2 by these two transfer methods on a similar substrate, and the intervention of strain and defects in the transfer process is probed by Raman and photoluminescence (PL) spectroscopy, respectively. We found that the conventional and commonly used wet transfer technique degraded the monolayer due to KOH contamination. In contrast, monolayers transferred using the surface-energy-assisted transfer method possess structural integrity and optical quality on a par with the as-grown MoS2 layers. As compared to the wet process a strain-free transfer was recorded in the surface-energy-assisted technique using Raman spectroscopic studies.

cond-mat.mtrl-sci↗