arXiv subjects

C. B. Eom

Publications and source records attributed to C. B. Eom.

At least 37 records · Page 2Linked to original sources

arXiv2018

Competing Orders and Ultrafast Energy Transfer at the Quantum Limit in a Nb$_3$Sn Superconductor Probed by Terahertz Electrodynamics

We report the low-energy electrodynamics of a moderately clean A15 superconductor (SC) following ultrafast excitation to understand and manipulate terahertz (THz) quasi--particle (QP) transport by tuning pump photoexcitation of from competing orders. Using 35-fs optical pulses, we observe a non-thermal enhancement in the low frequency conductivity, opposite to that observed for THz pump, which persists up to an additional critical temperature, above the SC one, from an electronic order in the Martensitic normal state. In the SC state, the fluence dependence of pair breaking kinetics together with an analytic model provides evidence for a `one photon-to-one pair' non-resonant energy transfer during the laser pulse. Such initial transfer of photon energy $\hbarω$ to QPs at the {\em quantum} limit, set by $2Δ_{SC}/\hbarω$=0.33$\%$, is more than one order of magnitude smaller than in previously studied BCS SCs, which we attribute to strong electron--phonon coupling and possible influence of phonon condensation in A15 SCs.

cond-mat.str-el↗

arXiv2018

Anisotropic spin-orbit torque generation in epitaxial SrIrO3 by symmetry design

Spin-orbit coupling (SOC), the interaction between the electron spin and the orbital angular momentum, can unlock rich phenomena at interfaces, in particular interconverting spin and charge currents. Conventional heavy metals have been extensively explored due to their strong SOC of conduction electrons. However, spin-orbit effects in classes of materials such as epitaxial 5d-electron transition metal complex oxides, which also host strong SOC, remain largely unreported. In addition to strong SOC, these complex oxides can also provide the additional tuning knob of epitaxy to control the electronic structure and the engineering of spin-to-charge conversion by crystalline symmetry. Here, we demonstrate room-temperature generation of spin-orbit torque on a ferromagnet with extremely high efficiency via the spin-Hall effect in epitaxial metastable perovskite SrIrO3. We first predict a large intrinsic spin-Hall conductivity in orthorhombic bulk SrIrO3 arising from the Berry curvature in the electronic band structure. By manipulating the intricate interplay between SOC and crystalline symmetry, we control the spin-Hall torque ratio by engineering the tilt of the corner-sharing oxygen octahedra in perovskite SrIrO3 through epitaxial strain. This allows the presence of an anisotropic spin-Hall effect due to a characteristic structural anisotropy in SrIrO3 with orthorhombic symmetry. Our experimental findings demonstrate the heteroepitaxial symmetry design approach to engineer spin-orbit effects. We therefore anticipate that these epitaxial 5d transition-metal oxide thin films can be an ideal building block for low-power spintronics.

cond-mat.mtrl-sci↗

arXiv2017

Electrical switching of magnetic polarity in a multiferroic BiFeO3 device at room temperature

We have directly imaged reversible electrical switching of the cycloidal rotation direction (magnetic polarity) in a (111)-BiFeO3 epitaxial-film device at room temperature by non-resonant x-ray magnetic scattering. Consistent with previous reports, fully relaxed (111)-BiFeO3 epitaxial films consisting of a single ferroelectric domain were found to comprise a sub-micron-scale mosaic of magneto-elastic domains, all sharing a common direction of the magnetic polarity, which was found to switch reversibly upon reversal of the ferroelectric polarization without any measurable change of the magneto-elastic domain population. A real-space polarimetry map of our device clearly distinguished between regions of the sample electrically addressed into the two magnetic states with a resolution of a few tens of micron. Contrary to the general belief that the magneto-electric coupling in BiFeO3 is weak, we find that electrical switching has a dramatic effect on the magnetic structure, with the magnetic moments rotating on average by 90 degrees at every cycle.

cond-mat.str-el↗

arXiv2015

Localized High Frequency Electrodynamic Behavior of Optimally-doped Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ Single Crystal films

Localized high frequency (several GHz) electrodynamic properties of a high quality epitaxial, single-crystal Iron-Pnicitde Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ thin film near optimal doping (x=0.08) are measured under a localized and strong RF magnetic field, created by a near-field microwave microscope. Two reflection electrodynamic measurements, including linear and the third harmonic responses, are performed to understand the electromagnetic properties of Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$. Our measurement results show that Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ has have a wide superconducting transition width and may have a multi-gap nature. In addition, based on the $1/T^2$ dependence of the third harmonics signal at lower temperature, Ba(Fe$_{1-x}$Co$_x$)$_2$As$_2$ shows the possibility of nodal behavior.

cond-mat.supr-con↗

arXiv2014

Development of very high Jc in Ba(Fe1-xCox)2As2 thin films grown on CaF2

Ba(Fe1-xCox)2As2 is the most tunable of the Fe-based superconductors (FBS) in terms of acceptance of high densities of self-assembled and artificially introduced pinning centres which are effective in significantly increasing the critical current density, Jc. Moreover, FBS are very sensitive to strain, which induces an important enhancement in critical temperature, Tc, of the material. In this paper we demonstrate that strain induced by the substrate can further improve Jc of both single and multilayer films by more than that expected simply due to the increase in Tc. The multilayer deposition of Ba(Fe1-xCox)2As2 on CaF2 increases the pinning force density Fp by more than 60% compared to a single layer film, reaching a maximum of 84 GN/m^3 at 22.5T and 4.2 K, the highest value ever reported in any 122 phase.

cond-mat.supr-con↗

arXiv2014

Electrodynamics of superconducting pnictide superlattices

It has been recently reported (S. Lee et al., Nature Materials 12, 392, 2013) that superlattices where layers of the 8% Co-doped BaFe2As2 superconducting pnictide are intercalated with non superconducting ultrathin layers of either SrTiO3 or of oxygen-rich BaFe2As2, can be used to control flux pinning, thereby increasing critical fields and currents, without significantly affecting the critical temperature of the pristine superconducting material. However, little is known about the electron properties of these systems. Here we investigate the electrodynamics of these superconducting pnictide superlattices in the normal and superconducting state by using infrared reflectivity, from THz to visible range. We find that multi-gap structure of these superlattices is preserved, whereas some significant changes are observed in their electronic structure with respect to those of the original pnictide. Our results suggest that possible attempts to further increase the flux pinning may lead to a breakdown of the pnictide superconducting properties.

cond-mat.supr-con↗

arXiv2013

Magnetic field tuned superconductor-to-insulator transition at the LaAlO$_3$ /SrTiO$_3$ interface

We present a study of the magnetic field tuned superconductor-to-insulator transition (SIT) in the electron gas that forms at the LaAlO$_3$/SrTiO$_3$ interface. We find that the magnetic field induces a transition into a weakly insulating state, as is observed for the electrostatically tuned SIT at this interface. Finite size scaling of the magnetoresistance yields the critical exponent product $zν\simeq$ 7/3, indicating that the transition is governed by quantum percolation effects. While such critical exponents have been reported previously for high resistance films, they have not been reported for a low resistance system like ours, with a maximum sheet resistance of $\approx$ 1.5 k$Ω$, much less than the quantum of resistance $R_Q \equiv h/4e^2 = 6.45$ k$Ω$.

cond-mat.supr-con↗

arXiv2013

Temperature Evolution of Itinerant Ferromagnetism in SrRuO3 Probed by Optical Spectroscopy

The temperature ($T$) dependence of the optical conductivity spectra $σ(ω)$ of a single crystal SrRuO$_3$ thin film is studied over a $T$ range from 5 to 450 K. We observed significant $T$ dependence of the spectral weights of the charge transfer and interband $d$-$d$ transitions across the ferromagnetic Curie temperature ($T_c$ ~ 150 K). Such $T$ dependence was attributed to the increase in the Ru spin moment, which is consistent with the results of density functional theory calculations. $T$ scans of $σ(Ω, T)$ at fixed frequencies $Ω$ reveal a clear $T^2$ dependence below $T_c$, demonstrating that the Stoner mechanism is involved in the evolution of the electronic structure. In addition, $σ(Ω, T)$ continues to evolve at temperatures above $T_c$, indicating that the local spin moment persists in the paramagnetic state. This suggests that SrRuO$_3$ is an intriguing oxide system with itinerant ferromagnetism.

cond-mat.str-el↗

arXiv2013

Artificially engineered superlattices of pnictide superconductor

Significant progress has been achieved in fabricating high quality bulk and thinfilm iron-based superconductors. In particular, artificial layered pnictide superlattices offer the possibility of tailoring the superconducting properties and understanding the mechanism of the superconductivity itself. For high field applications, large critical current densities (Jc) and irreversibility fields (Hirr) are indispensable along all crystal directions. On the other hand, the development of superconducting devices such as tunnel junctions requires multilayered heterostructures. Here we show that artificially engineered undoped Ba-122 / Co doped Ba-122 compositionally modulated superlattices produce ab-aligned nanoparticle arrays. These layer and self-assemble along c-axis aligned defects, and combine to produce very large Jc and Hirr enhancements over a wide angular range. We also demonstrate a structurally modulated SrTiO3 (STO) / Co doped Ba-122 superlattice with sharp interfaces. Success in superlattice fabrication involving pnictides will aid the progress of heterostructured systems exhibiting novel interfacial phenomena and device applications.

cond-mat.supr-con↗

arXiv2012

Artificial and self-assembled pinning centers in Ba(Fe1-xCox)2As2 thin films as a route to very high current density

We report on the superior vortex pinning of single and multilayer Ba(Fe1-xCox)2As2 thin films with self-assembled c-axis and artificially introduced ab-plane pins. Ba(Fe1-xCox)2As2 can accept a very high density of pins (15-20 vol%) without Tc suppression. The matching field is greater than 12 T, producing a significant enhancement of the critical current density Jc, an almost isotropic Jc (Theta,20T) > 10^5 A/cm2, and global pinning force density Fp of about 50 GN/m^3. This scenario strongly differs from the high temperature cuprates where the addition of pins without Tc suppression is limited to 2-4 vol%, leading to small HIrr enhancements and improved Jc only below 3-5 Tesla.

cond-mat.supr-con↗

arXiv2012

Evidence for charge-vortex duality at the LaAlO$_3$/SrTiO$_3$ interface

The concept of duality has proved extremely powerful in extending our understanding in many areas of physics (1, 2). Charge-vortex duality has been proposed (3, 4) as a model to understand the superconductor to insulator transition (SIT) in disordered thin films (5, 6) and Josephson junction arrays (7, 8, 9). In this model, on the superconducting side, one has delocalized Cooper pairs but localized vortices; while on the insulating side, one has localized Cooper pairs but mobile vortices. Here we show a new experimental manifestation of this duality in the electron gas that forms at the interface between LaAlO$_3$ (LAO) and SrTiO$_3$ (STO) (10, 11, 12, 13, 14). The effect is due to the motion of vortices generated by the magnetization dynamics of the ferromagnet that also forms at the same interface (14, 15, 16), which results in an increase in resistance on the superconducting side of the transition, but an increase in conductance on the insulating side.

cond-mat.supr-con↗

arXiv2011

Localization of Two-dimensional Electron Gas in LaAlO3/SrTiO3 Heterostructures

We report strong localization of 2D electron gas in LaAlO3 / SrTiO3 epitaxial thin-film heterostructures grown on (LaAlO3)0.3-(Sr2AlTaO3)0.7 substrates by using pulsed laser deposition with in-situ reflection high-energy electron diffraction. Using longitudinal and transverse magnetotransport measurements, we have determined that disorder at the interface influences the conduction behavior, and that increasing the carrier concentration by growing at lower oxygen partial pressure changes the conduction from strongly localized at low carrier concentration to metallic at higher carrier concentration, with indications of weak localization. We interpret this behavior in terms of a changing occupation of Ti 3d bands near the interface, each with a different spatial extent and susceptibility to localization by disorder, and differences in carrier confinement due to misfit strain and point defects.

cond-mat.str-el↗

arXiv2011

Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects

We investigated a switchable ferroelectric diode effect and its physical mechanism in Pt/BiFeO3/SrRuO3 thin-film capacitors. Our results of electrical measurements support that, near the Pt/BiFeO3 interface of as-grown samples, a defective layer (possibly, an oxygen-vacancy-rich layer) becomes formed and disturbs carrier injection. We therefore used an electrical training process to obtain ferroelectric control of the diode polarity where, by changing the polarization direction using an external bias, we could switch the transport characteristics between forward and reverse diodes. Our system is characterized with a rectangular polarization hysteresis loop, with which we confirmed that the diode polarity switching occurred at the ferroelectric coercive voltage. Moreover, we observed a simultaneous switching of the diode polarity and the associated photovoltaic response dependent on the ferroelectric domain configurations. Our detailed study suggests that the polarization charge can affect the Schottky barrier at the ferroelectric/metal interfaces, resulting in a modulation of the interfacial carrier injection. The amount of polarization-modulated carrier injection can affect the transition voltage value at which a space-charge-limited bulk current-voltage (J-V) behavior is changed from Ohmic (i.e., J ~ V) to nonlinear (i.e., J ~ V^n with n \geq 2). This combination of bulk conduction and polarization-modulated carrier injection explains the detailed physical mechanism underlying the switchable diode effect in ferroelectric capacitors.

cond-mat.mtrl-sci↗

arXiv2011

Coexistence of superconductivity and ferromagnetism in two dimensions

Ferromagnetism is usually considered to be incompatible with conventional superconductivity, as it destroys the singlet correlations responsible for the pairing interaction. Superconductivity and ferromagnetism are known to coexist in only a few bulk rare-earth materials. Here we report evidence for their coexistence in a two-dimensional system: the interface between two bulk insulators, LaAlO$_3$ (LAO) and SrTiO$_3$ (STO), a system that has been studied intensively recently. Magnetoresistance, Hall and electric-field dependence measurements suggest that there are two distinct bands of charge carriers that contribute to the interface conductivity. The sensitivity of properties of the interface to an electric field make this a fascinating system for the study of the interplay between superconductivity and magnetism.

cond-mat.supr-con↗

arXiv2011

Superfluid density measurements of Ba(CoxFe1-x)2As2 films near optimal doping

We report the first direct measurements of superfluid density, ns(T) \propto λ-2(T), in films of Fe-pnictide superconductors. The magnetic penetration depth, λ(0), in our epitaxial, single-crystal Ba(CoxFe1-x)2As2 films near optimal doping (x=0.08) is 350 nm to 430 nm, comparable to bulk single crystals. The T-dependence of λ-2 indicates a small s-wave gap, 2Δ(0)/kBTc = 2.2 \pm 0.1. In detail, λ has power-law behavior at low T: λ(T)/λ(0) - 1 \approx 0.60*(T/Tc)2.5\pm0.1. The small gap, together with power-law behavior at low T, suggests strong intraband scattering on the larger-gap Fermi surface and significant interband scattering between large-gap and small-gap Fermi surfaces.

cond-mat.supr-con↗

arXiv2011

Step bunching-induced vertical lattice mismatch and crystallographic tilt in vicinal BiFeO3(001) films

Epitaxial (001) BiFeO3 thin films grown on vicinal SrTiO3 substrates are under large anisotropic stress from the substrates. The variations of the crystallographic tilt angle and the c lattice constant, caused by the lattice mismatch, along the film thickness were analyzed quantitatively using the X-ray diffraction technique. By generalizing the Nagai model, we estimated how step bunching resulted in the vertical lattice mismatch between adjacent BiFeO3 layers, which induced the strain relaxation and crystallographic tilt. The step bunching was confirmed by the increased terrace width on the BiFeO3 surface.

cond-mat.mtrl-sci↗

arXiv2010

Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain

Recently a metallic state was discovered at the interface between insulating oxides, most notably LaAlO3 and SrTiO3. Properties of this two-dimensional electron gas (2DEG) have attracted significant interest due to its potential applications in nanoelectronics. Control over this carrier density and mobility of the 2DEG is essential for applications of these novel systems, and may be achieved by epitaxial strain. However, despite the rich nature of strain effects on oxide materials properties, such as ferroelectricity, magnetism, and superconductivity, the relationship between the strain and electrical properties of the 2DEG at the LaAlO3/SrTiO3 heterointerface remains largely unexplored. Here, we use different lattice constant single crystal substrates to produce LaAlO3/SrTiO3 interfaces with controlled levels of biaxial epitaxial strain. We have found that tensile strained SrTiO3 destroys the conducting 2DEG, while compressively strained SrTiO3 retains the 2DEG, but with a carrier concentration reduced in comparison to the unstrained LaAlO3/SrTiO3 interface. We have also found that the critical LaAlO3 overlayer thickness for 2DEG formation increases with SrTiO3 compressive strain. Our first-principles calculations suggest that a strain-induced electric polarization in the SrTiO3 layer is responsible for this behavior. It is directed away from the interface and hence creates a negative polarization charge opposing that of the polar LaAlO3 layer. This both increases the critical thickness of the LaAlO3 layer, and reduces carrier concentration above the critical thickness, in agreement with our experimental results. Our findings suggest that epitaxial strain can be used to tailor 2DEGs properties of the LaAlO3/SrTiO3 heterointerface.

cond-mat.mtrl-sci↗

arXiv2010

Multi-gap superconductivity in a BaFe1.84Co0.16As2 film from optical measurements at terahertz frequencies

We measured the THz reflectance properties of a high quality epitaxial thin film of the Fe-based superconductor BaFe$_{1.84}$Co$_{0.16}$As$_2$ with T$_c$=22.5 K. The film was grown by pulsed laser deposition on a DyScO$_3$ substrate with an epitaxial SrTiO$_3$ intermediate layer. The measured $R_S/R_N$ spectrum, i.e. the reflectivity ratio between the superconducting and normal state reflectance, provides clear evidence of a superconducting gap $Δ_A$ close to 15 cm$^{-1}$. A detailed data analysis shows that a two-band, two-gap model is absolutely necessary to obtain a good description of the measured $R_S/R_N$ spectrum. The low-energy $Δ_A$ gap results to be well determined ($Δ_A$=15.5$\pm$0.5 cm$^{-1}$), while the value of the high-energy gap $Δ_B$ is more uncertain ($Δ_B$=55$\pm$7 cm$^{-1}$). Our results provide evidence of a nodeless isotropic double-gap scenario, with the presence of two optical gaps corresponding to 2$Δ/kT_c$ values close to 2 and 7.

cond-mat.supr-con↗