arXiv subjects

C. Bigi

Publications and source records attributed to C. Bigi.

8 recordsLinked to original sources

arXiv2025

Uncovering surface states of the Dirac semimetal BaMg2Bi2

BaMg2Bi2 is a Dirac semimetal characterized by a simple Dirac cone crossing the Fermi level at the center of the Brillouin zone, protected by C3 rotational symmetry. Together with its Sr-based analogue SrMg2Bi2, it has been proposed as a promising candidate for a chemically driven topological switch: while SrMg2Bi2 is an insulator, BaMg2Bi2 exhibits non-trivial topological features. A detailed understanding of its electronic structure is essential to elucidate its electronic and transport properties. Previous photoemission studies confirmed the Dirac nature of BaMg2Bi2, but were limited to high photon energies, which hindered direct comparison with density functional theory calculations (DFT), due to reduced resolution and higher-frequency matrix-element modulation in that regime. In this work, we combine high-resolution angle-resolved photoemission spectroscopy (ARPES) and DFT calculations to get full insight on the valence band states, providing a comprehensive picture of the low-energy electronic structure. Our measurements reveal the presence of previously unobserved surface states. We found that they are topologically trivial, but they unlock a more comprehensive understanding of the material's behavior, reconciling previous discrepancies between experiment and theory.

cond-mat.str-el↗

arXiv2025

Dimensional control of the band-gap crossover in layered lead iodide

Before assessing the suitability of a semiconductor for specific applications, the first question to ask is whether it possesses a direct or indirect band gap. This distinction is fundamental, as the operation of devices such as light-emitting diodes, solar cells, and photodetectors is closely tied to the band-gap nature. Semiconductors that exhibit a band-gap crossover, from indirect to direct or vice versa, offer enhanced versatility for optoelectronic applications. Prominent examples include transition metal dichalcogenides and the subject of this study, PbI2. The nature of the band gap, and its crossover, can only be directly determined in reciprocal space by tracking the valence-band maximum and conduction-band minimum. Here, we directly visualize the thickness-dependent crossover of PbI2 from an indirect to a direct band gap using angle-resolved photoemission spectroscopy. Our measurements reveal a shift of the valence-band maximum toward the Brillouin-zone center as the film thickness exceeds a monolayer. Supported by density functional theory calculations, our results show that this crossover is driven by interlayer interactions and the hybridization of iodine pz orbitals. These findings demonstrate the tunable electronic structure of PbI2 and its potential for optoelectronic applications.

cond-mat.mtrl-sci↗

arXiv2025

Spin-degenerate bulk bands and topological surface states associated with Dirac nodal lines in RuO2

Altermagnets are a novel platform to realize exotic electromagnetic properties distinct from those of conventional ferromagnets and antiferromagnets. We report results of micro-focused angle-resolved photoemission spectroscopy (ARPES) on RuO2, in which its altermagnetic nature has been under fierce debate in connection with crystal-orientation-dependent spintronic functionalities. By elucidating the band structure of the (100), (110) and (101) surfaces of a bulk single crystal using micro-ARPES, we found that, irrespective of the surface orientation, the experimental band structures show a good agreement with the bulk-band calculations for the nonmagnetic phase, but display a severe disagreement with those for the antiferromagnetic phase. Moreover, spin-resolved ARPES signifies a negligible spin polarization in the bulk bands, suggesting the absence of antiferromagnetism and altermagnetic spin splitting. In addition, we identified a nearly flat surface band and a dispersive one near the Fermi level at the (100)/(110) and (101) surfaces, respectively. Our first-principles calculations and analysis of Berry phase attribute these states to the topological surface bands emerging from the bulk Dirac nodal lines around the Fermi level. Our results indicate that such topological surface/interface states must be considered to understand the spintronic functionalities of RuO2, and may provide new insights into its catalytic characteristics.

cond-mat.mtrl-sci↗

arXiv2021

The planar triangular $S=3/2$ magnet AgCrSe$_2$: magnetic frustration, short range correlations, and field tuned anisotropic cycloidal magnetic order

Our studies evidence an anisotropic magnetic order below $T_N = 32$~K. Susceptibility data in small fields of about 1~T reveal an antiferromagnetic (AFM) order for $H \perp c$, whereas for $H \parallel c$ the data are reminiscent of a field-induced ferromagnetic (FM) structure. At low temperatures and for $H \perp c$, the field-dependent magnetization and AC susceptibility data evidence a metamagnetic transition at $H^+ = 5$~T, which is absent for $H \parallel c$. We assign this to a transition from a planar cycloidal spin structure at low fields to a planar fan-like arrangement above $H^+$. A fully FM polarized state is obtained above the saturation field of $H_{\perp S} = 23.7$~T at 2~K with a magnetization of $M_s = 2.8$~$μ_{\rm B}{\rm /Cr}$. For $H \parallel c$, $M(H)$ monotonously increases and saturates at the same $M_s$ value at $H_{\parallel S} = 25.1$~T at 4.2~K. Above $T_N $, the magnetic susceptibility and specific heat indicate signatures of two dimensional (2D) frustration related to the presence of planar ferromagnetic and antiferromagnetic exchange interactions. We found a pronounced nearly isotropic maximum in both properties at about $T^* = 45$~K, which is a clear fingerprint of short-range correlations and emergent spin fluctuations. Calculations based on a planar 2D Heisenberg model support our experimental findings and suggest a predominant FM exchange among nearest and AFM exchange among third-nearest neighbors. Only a minor contribution might be assigned to the antisymmetric Dzyaloshinskii-Moriya interaction possible related to the non-centrosymmetric polar space group $R3m$. Due to these competing interactions, the magnetism in AgCrSe$_{2}$, in contrast to the oxygen based delafossites, can be tuned by relatively small, experimentally accessible, magnetic fields, allowing us to establish the complete anisotropic magnetic $H-T$ phase diagram in detail.

cond-mat.str-el↗

arXiv2019

Proximity-induced ferromagnetism and chemical reactivity in few layers VSe2 heterostructures

Among Transition-Metal Dichalcogenides, mono and few-layers thick VSe2 has gained much recent attention following claims of intrinsic room-temperature ferromagnetism in this system, which have nonetheless proved controversial. Here, we address the magnetic and chemical properties of Fe/VSe2 heterostructure by combining element sensitive absorption spectroscopy and photoemission spectroscopy. Our x-ray magnetic circular dichroism results confirm recent findings that both native mono/few-layer and bulk VSe2 do not show any signature of an intrinsic ferromagnetic ordering. Nonetheless, we find that ferromagnetism can be induced, even at room temperature, after coupling with a Fe thin film layer, with antiparallel alignment of the moment on the V with respect to Fe. We further consider the chemical reactivity at the Fe/VSe2 interface and its relation with interfacial magnetic coupling.

cond-mat.mes-hall↗

arXiv2019

Spin- and angle-resolved photoemission studies of the electronic structure of Si(110)"16x2" surfaces

The electronic structure of Si(110)"16 x 2" double-domain, single-domain and 1 x 1 surfaces have been investigated using spin- and angle-resolved photoemission at sample temperatures of 77 K and 300 K. Angle-resolved photoemission was conducted using horizontally- and vertically-polarised 60 eV and 80 eV photons. Band-dispersion maps revealed four surface states ($S_1$ to $S_4$) which were assigned to silicon dangling bonds on the basis of measured binding energies and photoemission intensity changes between horizontal and vertical light polarisations. Three surface states ($S_1$, $S_2$ and $S_4$), observed in the Si(110)"16 x 2" reconstruction, were assigned to Si adatoms and Si atoms present at the edges of the corrugated terrace structure. Only one of the four surface states, $S_3$, was observed in both the Si(110)"16 x 2" and 1 x 1 band maps and consequently attributed to the pervasive Si zigzag chains that are components of both the Si(110)"16 x 2" and 1 x 1 surfaces. A state in the bulk-band region was attributed to an in-plane bond. All data were consistent with the adatom-buckling model of the Si(110)"16 x 2" surface. Whilst room temperature measurements of $P_y$ and $P_z$ were statistically compatible with zero, $P_x$ measurements of the enantiomorphic A-type and B-type Si(110)"16 x 2" surfaces gave small average polarisations of around 1.5\% that were opposite in sign. Further measurements at 77 K on A-type Si(110)"16 x 2" surface gave a smaller value of +0.3\%. An upper limit of $\sim1\%$ may thus be taken for the longitudinal polarisation.

cond-mat.mtrl-sci↗

arXiv2018

Electronic properties of type-II Weyl semimetal WTe$_2$. A review perspective

Currently, there is a flurry of research interest on materials with an unconventional electronic structure, and we have already seen significant progress in their understanding and engineering towards real-life applications. The interest erupted with the discovery of graphene and topological insulators in the previous decade. The electrons in graphene simulate massless Dirac Fermions with a linearly dispersing Dirac cone in their band structure, while in topological insulators, the electronic bands wind non-trivially in momentum space giving rise to gapless surface states and bulk bandgap. Weyl semimetals in condensed matter systems are the latest addition to this growing family of topological materials. Weyl Fermions are known in the context of high energy physics since almost the beginning of quantum mechanics. They apparently violate charge conservation rules, displaying the "chiral anomaly", with such remarkable properties recently theoretically predicted and experimentally verified to exist as low energy quasiparticle states in certain condensed matter systems. Not only are these new materials extremely important for our fundamental understanding of quantum phenomena, but also they exhibit completely different transport phenomena. For example, massless Fermions are susceptible to scattering from non-magnetic impurities. Dirac semimetals exhibit non-saturating extremely large magnetoresistance as a consequence of their robust electronic bands being protected by time reversal symmetry. These open up whole new possibilities for materials engineering and applications including quantum computing. In this review, we recapitulate some of the outstanding properties of WTe$_2$, namely, its non-saturating titanic magnetoresistance due to perfect electron and hole carrier balance up to a very high magnetic field observed for the very first time. (Continued. Please see the main article).

cond-mat.mtrl-sci↗

arXiv2017

Three-Dimensional Electronic Structure of type-II Weyl Semimetal WTe$_2$

By combining bulk sensitive soft-X-ray angular-resolved photoemission spectroscopy and accurate first-principles calculations we explored the bulk electronic properties of WTe$_2$, a candidate type-II Weyl semimetal featuring a large non-saturating magnetoresistance. Despite the layered geometry suggesting a two-dimensional electronic structure, we find a three-dimensional electronic dispersion. We report an evident band dispersion in the reciprocal direction perpendicular to the layers, implying that electrons can also travel coherently when crossing from one layer to the other. The measured Fermi surface is characterized by two well-separated electron and hole pockets at either side of the $Γ$ point, differently from previous more surface sensitive ARPES experiments that additionally found a significant quasiparticle weight at the zone center. Moreover, we observe a significant sensitivity of the bulk electronic structure of WTe$_2$ around the Fermi level to electronic correlations and renormalizations due to self-energy effects, previously neglected in first-principles descriptions.

cond-mat.mtrl-sci↗